Thermal evolution of high dose iron implanted sintered alumina

Sintered plates of alumina have been implanted at room temperature with 110 keV⁵⁷Fe⁺ at a dose of 1.2×10¹⁷ ions.cm^?2. The analysis of the Conversion Electron Mössbauer Spectrum indicated that implantation introduces iron in alumina in three charge state: Fe²⁺ (two components), Fe⁴⁺ and Fe⁰ (metallic clusters). The evolution of the iron depth distribution during annealings in oxiding or in neutral atmosphere has been followed using the Rutherford backscattering spectroscopy. Up to 800°C the profile as well as the charge states of iron evolve very slowly. A drastic change occurs' for annealing temperature around 1000°C. The total amount of iron is distributed among α-Fe₂O₃ and α-(Fe_1?x Al _x )₂O₃ precipitates. Some scanning electron micrographs have allowed to locate these precipitates. For highest temperature anneals, up to 1600°C, only substitutional iron remain.     

Photoluminescence and structural defects in silicon layers implanted by iron ions

The photoluminescence spectra of silicon samples implanted by ⁵⁶Fe⁺ ions [energy, 170 keV; dose, 1×10¹⁶, (2–4)×10¹⁷ cm^?2] and annealed at temperatures of 800, 900, and 1000°C are measured. The structure of the samples at each stage of treatment is investigated using transmission electron microscopy (TEM). It is found that the phase formation and morphology of crystalline iron disilicide precipitates depend on the dose of iron ions and the annealing temperature. A comparison of the dependences of the intensity and spectral distribution of the photoluminescence on the measurement temperature, annealing temperature, and morphology of the FeSi₂ phase revealed the dislocation nature of photoluminescence.     

Metallic alloy precipitates in high dose indium implanted MgO

Abstract

MgO implanted at room temperature with 150keV In⁺ ions and doses ranging from 10¹⁵ to 10¹⁷ ions cm^?2 was studied by optical absorption and transmission electron microscopy (TEM). Creation of defects in the anionic sublattice (F-, F⁺-, F₂-centers) and in the cationic sublattice (V^?-centers) are observed. Subsequent annealings of the implanted crystals have shown different behaviours depending on the implanted dose. For medium dose (2 × 10¹⁶ ions cm^?2), the formation of In³⁺ species seems to be the preponderant phenomenon. At higher dose (8 × 10¹⁶ ions cm^?2), metallic precipitates are formed between 400 and 700°C. The identification of these precipitates has been achieved using TEM: they are formed of a metallic alloy Mg₃In with a hexagonal structure and their orientation relationship with respect to the MgO matrix is: (0001)Mg₃In//(111)Mgo and [1120]_Mg3In// [l10]MgO.     

57Fe conversion electron Mössbauer spectrometric study of boron and carbon ion implanted irons

Amorphous layers produced at the surface of iron by B⁺ and C⁺ implantation (50 kV, 1×10¹⁸ ions cm⁻²) were analyzed by CEMS. The CEM spectrum of B⁺ implanted layer was composed of broad doublet and sextet. Spread hyperfine field distribution, P(H), indicates the formation of extremely disordered FeB layer. Annealing at 400°C brought about precipitation of FeB, which was converted to Fe₂B by annealing at 500°C. The P(H) for C⁺ implanted iron was resolved to 3 subpeaks with H values of 11.0, 18.0 and 22.5 T. The amorphous FeC phase was strongly correlated to crystalline Fe₅C₂ and Fe₂C, which precipitated at 300°C and were transformed into Fe₃C at 500°C. The amorphous layer disappeared by annealing at 600°C.     

Annealing behaviour of iron implanted zirconia

A zirconia film was implanted at room temperature with 100 keV⁵⁷Fe⁺ to a fluence of 8×10¹⁶ ions/cm². The analysis of the Conversion Electron Mössbauer spectra shows that iron is distributed among different charge states: Fe⁰ (in a form of small and large metallic iron aggregates) Fe²⁺ and Fe⁴⁺. The evolution of the iron depth profile deduced from Rutherford backscattering measurements as well as the change in the charge states of iron as a function of annealing under argon atmosphere are presented.     

Phase analysis in α-Fe after high-dose Si ion implantation by depth-selective conversion-electron Mössbauer spectroscopy (DCEMS)

Si⁺ ions of 50 keV in energy were implanted into α-Fe (95% ⁵⁷Fe) with a nominal dose of 5 × 10¹⁷ cm^?2 at 350°C. The depth distribution of the Fe-Si phases formed by ion implantation after annealing at 300 and 400°C for 1 h was studied quantitatively by depth-selective conversion-electron Mössbauer spectroscopy (DCEMS). Ordered Fe₃Si and ε-FeSi was observed.     

Morin transition in annealed iron implanted garnets

Y₃Fe₅O₁₂, Y₃Al₅O₁₂ and Gd₃Ga₅O₁₂ single crystal granets were implanted with 10¹⁷iron.cm⁻². Complementary techniques: CEMS, TEM and XRD at glancing angles have allowed to follow the behavior of implanted iron during thermal annealings. For Y₃Fe₅O₁₂ large α-Fe₂O₃ particles are formed after annealings and at 1200°C occurs a low temperature regime of the Morin transition at room temperature. For Y₃Al₅O₁₂, due to aluminium substitution in the precipitates, the Morin transition is only detected after an annealing at 1300°C whereas in Gd₃Ga₅O₁₂ no Morin transition is observed.     

The charge states of iron in insulators implanted with57Co and57Fe

Single crystals of α-Al₂O₃ and LiNbO₃ were implanted with⁵⁷Co (dose: up to 2×10¹⁵ atoms/cm²) and with⁵⁷Fe (dose: 2×10¹⁵ atoms/cm²) ions. The Mössbauer spectra revealed the disordered atomic environment. Fe²⁺ and Fe³⁺ charge states were observed. The spectra were compared to the spectra of crystals doped with⁵⁷Co. It was remarkable that in the doped α-Al₂O₃ Fe³⁺ states with slow spin-spin relaxation have appeared. The CEMS study of the samples implanted with⁵⁷Fe resulted in Fe²⁺ ionic states indicating that a fraction of Co atoms can also be in Co²⁺ state.     

Microdisperse Iron Silicide Structures Produced by Implantation of Iron Ions in Silicon

Iron implanted and subsequently annealed n-type Si(111) was studied by conversion electron Mössbauer spectroscopy for phase analysis and Auger electron spectroscopy for sputter depth profiling and element mapping. During implantation (200 keV, 3 × 10¹⁷ cm^?2, 350°C) a mixture of β- and α-FeSi₂ is firmed and after the subsequent annealing (900°C for 18 h and 1150°C for 1 h) a complete transition to the β- and the α-phase can be detected. The as-implanted profile has Gaussian shape and is broadening during annealing at 900°C to a plateau-like profile and shows only a slight broadening and depth depending fluctuations of the iron concentration after the 1150°C annealing. With scanning Auger electron spectroscopy the lateral iron and silicon distribution were investigated and show for the sample annealed at 900°C large separated β-FeSi₂ precipitates which grow due to the process of Ostwald ripening. At 1150°C additionally coalescence of the precipitates occur and a wide extended penetration α-FeSi₂ network structure is formed.     

Magnetic Resonance Study of Fe-Implanted TiO<Subscript>2</Subscript> Rutile

Single-crystal (100) and (001) TiO₂ rutile substrates have been implanted with 40 keV Fe⁺ at room temperature with high doses in the range of (0.5–1.5) × 10¹⁷ ions/cm². A ferromagnetic resonance (FMR) signal has been observed for all samples with the intensity and the out-of-plane anisotropy increasing with the implantation dose. The FMR signal has been related to the formation of a percolated metal layer consisting of close-packed iron nanoparticles in the implanted region of TiO₂ substrate. Electron spin resonance (ESR) signal of paramagnetic Fe³⁺ ions substituting Ti⁴⁺ positions in the TiO₂ rutile structure has been also observed. The dependences of FMR resonance fields on the DC magnetic field orientation reveal a strong in-plane anisotropy for both (100) and (001) substrate planes. An origin of the in-plane anisotropy of FMR signal is attributed to the textured growth of the iron nanoparticles. As result of the nanoparticle growth aligned with respect to the structure of the rutile host, the in-plane magnetic anisotropy of the samples reflects the symmetry of the crystal structure of the TiO₂ substrates. Crystallographic directions of the preferential growth of iron nanoparticles have been determined by computer modeling of anisotropic ESR signal of substitutional Fe³⁺ ions.     

M?ssbauer study of carbon coated iron magnetic nanoparticles produced by simultaneous reduction/pyrolysis

Magnetic iron nanoparticles immersed in a carbon matrix were produced by a combined process of controlled dispersion of Fe^3?+? ions in sucrose, thermal decomposition with simultaneous reduction of iron cores and the formation of the porous carbonaceous matrix. The materials were prepared with iron contents of 1, 4 and 8 in %wt in sucrose and heated at 400, 600 and 800°. The samples were analyzed by XRD, Mössbauer spectroscopy, magnetization measurements, TG, SEM and TEM. The materials prepared at 400° are composed essentially of Fe₃O₄ particles and carbon, while treatments at higher temperatures, e.g. 600 and 800° produced as main phases Fe⁰ and Fe₃C. The Mössbauer spectra of samples heated at 400° showed two sextets characteristic of a magnetite phase and other contributions compatible with Fe^3?+? and Fe^2?+? phases in a carbonaceous matrix. Samples treated at temperatures above 600° showed the presence of metallic iron with concentrations between 16?C43%. The samples heated at 800° produced higher amounts of Fe₃C (between 20% and 58%). SEM showed for the iron 8% sample treated at 600?C800°C particle sizes smaller than 50 nm. Due to the presence of Fe⁰ particles in the carbonaceous porous matrix the materials have great potential for application as magnetic adsorbents.     

Thermo-electric method for nearly complete oxidization of highly iron-doped lithium niobate crystals

A new method is presented, allowing the nearly complete oxidization of lithium niobate crystals (LiNbO₃), doped with large amounts of iron oxide (0.05–3 wt. % Fe₂O₃) utilizing annealing at 700 °C in the presence of externally applied electric fields. The treatment results in a concentration ratio of Fe²⁺ and Fe³⁺ ions of less than 2×10^-3. Strong oxidization of iron in LiNbO₃ reduces the photorefractive effect and is therefore of particular interest for nonlinear-optical applications. PACS 42.65.-k; 66.30.Hs; 71.55.-i     

CEMS study on aluminium implanted iron

Up to now a great deal of investigations in ion beam mixing of iron-aluminium layers are known. However, the easier way to produce such layers by direct implantation of aluminium ions in iron is less studied. In the present work aluminium implanted iron layers are studied. Iron samples were implanted with aluminium ions at 50, 100, and 200 keV, respectively, with doses between 5×10¹⁶ and 5×10¹⁷ cm⁻². Independent of energy, at doses up to 2×10¹⁷ cm⁻², besides alpha iron further magnetic fractions with a Fe₃Al-like structure are formed while at a dose of 5×10¹⁷ cm⁻² amorphous nonmagnetic components are formed.     

Evolution of Phase Composition and Structure in Sapphire Implanted with <Superscript>64</Superscript>Zn<Superscript>+</Superscript> Ions and Heat-Treated in Oxygen

Single-crystal Al₂O₃ substrates are implanted with ⁶⁴Zn⁺ ions using doses of 5 × 10¹⁶ cm^–2 and an energy of 100 keV. The samples are annealed in oxygen with a stepwise increase in temperature from 400 to 1000°C. The changes on the surface and in the bulk of the sample are analyzed via scanning electron microscopy, energy-dispersive analysis, transmission electron microscopy, and Auger electron spectroscopy.     

Diffusion of 55Fe in Fe2O3 single crystals

The diffusion of ⁵⁵Fe has been measured parallel to the c axis of Fe₂O₃ single crystals at temperatures in the range 708–1303°C and at an oxygen activity of unity. The tracer penetration profiles were determined using sectioning techniques. For temperatures above 900°C the tracer diffusion coefficient is given byD¹(Fe) = 1.6 × 10⁹ exp[?6.0 (eV)/kT] cm² s^?1 and below 900°C by 2.8 × 10^?9 exp[?1.8 (eV)kT]. The high-temperature behaviour is probably characteristic of pure Fe₂O₃, whereas diffusion at lower temperatures may be influenced by impurities. The most likely defects responsible for diffusion of Fe are iron interstitials and, for oxygen, oxygen vacancies, and the observed activation energies are discussed in terms of the properties of these defects. The diffusion data and defect models have been used to predict the rate of growth of Fe₂O₃ and indicate that outward Fe diffusion is the dominant transport process. Previously published data for Fe₂O₃ growth in a variety of experimental situations have been corrected to a single rate constant using a model for multilayer growth. The corrected data are all in good agreement but are approximately two orders of magnitude greater than predicted from diffusion data, which suggests that grain boundary diffusion controls the growth of Fe₂O₃ in practice.     

Diffusion and correlation effects in iron-doped CoO

The diffusion of ⁵⁹Fe and ⁶⁰Co has been measured in pure CoO and dilute iron-doped CoO, (Co_1?cFe_cO, as a function of temperature (1000–1400°C) and oxygen partial pressure P_{o2), (10^?7 ≦ Po2 ≦ 0 21 atm) The enhancement factors for the diffusivities of iron and cobalt are nearly identical, which suggests that the primary cause of the enhancement is the increased concentration of charge-compensating cation vacancies with the addition of iron. The Fe ions dissolved in CoO appear to exist as a mixture of Fe²⁺ and Fe³⁺ ions, the fraction of iron ions in the three-plus state decreases with decreasing Po2 The simultaneous diffusion of ⁵²Fe and ⁵⁹Fe has been measured as a function of (itpo; at 1200°C The correlation factor for Fe impurity diffusion determined from the isotope-effect measurements is about the same as that for self-diffusion in CoO at high (itPo2} (2 × 10^?3 ≦ p_o2 ≦ 0 21 atm), but increases slightly with decreasing p_O2 Both the enhancement-effect and isotope-effect experiments suggest that the nearestneighbor interactions between Fe ions and vacancies is small, and that the dissolved Fe ions do not have strongly bound electron holes.     

CEMS measurements at low temperatures with Fe-Implanted sapphire

A single crystal of sapphire was implanted with 100-keV⁵⁷Fe to a dose of 3.4×10¹⁵ ions/cm². The charge states of iron ions were investigated with the CEMS technique at low temperatures. The formation of the observed charge states Fe²⁺(1) and Fe²⁺(2) were elucidated in terms of crystal structure.     

Irradiation and heating effects in amethyst crystals from brazil

Abstract

In this work we report optical absorption spectroscopy study of thermal and irradiation effects on samples of amethyst from Minas Gerais and Rio Grande do Sul, Brazil. Three bands were studied: 10500 cm^?1 (k), 18300 cm^?1 (θ) and 28000 cm^?1 (ζ). Thermal and irradiation effects shows that the θ and ζ bands belongs to a same center and the k band to another center. The isothermal decay and irradiation growth of these band reveal a complex kinetics. The optical absorption bands of amethyst from Minas Gerais do not recover the prmitive absorbance after being bleached at 470°C and irradiated. This sample heated at 470°C in highly reducing atmosphere gets a yellow-brown color. The amethyst from Rio Grande do Sul treated at 400°C gets, also, a yellow-brown color. We suggest this color is probalbly due to the formation of Fe₂O₃ submicroscopc segregate crystals due to the diffusion of Fe ions and oxygen vacancies.     

Zero resistance at 148.5K in fluorine implanted YBaCuO compound

Fluorine ions with an energy of 180keV at a dose of 1×10¹⁵ ions/cm² have been implanted into YBa₂Cu₃O_x. After annealed at 800°C, the resistance of the new Y-Ba-Cu-F-O compound drops to zero at 148.5K.     

Epitaxial growth of silicon on silicon implanted with iron ions and optical properties of resulting structures

The method of ultrahigh-vacuum low-temperature (T = 850°C) purification of silicon single crystals having the (100) and (111) orientation and implanted with low-energy (E = 40 keV) iron ions with various doses (Φ = 10¹⁵?1.8×10¹⁷ cm^?2) and subjected to pulsed ion treatment (PIT) in a silicon atom flow has been tested successfully. The formation of semiconducting iron disilicide (β-FeSi₂) near the surface after PIT is confirmed for a Si(100) sample implanted with the highest dose of iron ions. The possibility of obtaining atomically smooth and reconstructed silicon surfaces is demonstrated. Smooth epitaxial silicon films with a roughness on the order of 1 nm and a thickness of up to 1.7 μm are grown on samples with an implantation dose of up to 10¹⁶ cm^?2. Optical properties of the samples before and after the growth of silicon layers are studied; the results indicate high quality of the grown layers and the absence of iron disilicide on their surface.