Transport in solid oxide porous electrodes: Effect of gas diffusion

We extend our previous treatment of a mixed ionic electronic conductor membrane, consisting of a porous cathode and anode separated by a thin non-porous layer, to the case where mass transport of molecules in the porous electrodes can be the rate-limiting step. The linearized transport equations for the ion-hole pairs in the solid and of the gas molecules in the pores are characterized by the length scales L_P = √L_d(1 − φ)/Sτ_s and L_g = 2L_p√[τ_sφ/τ(1 − φ)][D_gc_g/D_IEc_i] respectively, where L_d = D_IE/K is the length scale that determines the transition from diffusion limited to surface exchange limited transport in the non-porous electrodes, K is the surface exchange coefficient, D_IE and D_g are the diffusion coefficients of the ion-hole pairs and of the molecules, c_i and c_g are the concentrations of the ions and molecules, S is the pore surface area per unit volume, φ the porosity and τ_s and τ the tortuosities of the solid and pore phases respectively. When L_g L_p, which is the case treated previously, the rate-limiting step in the transport is ionic diffusion and surface exchange. Enhancements in oxygen ion current of two orders in magnitude, over non-porous electrodes, are in principle achievable with porous perovskite MIEC having surface area s = 10⁶ cm⁻¹. When L_g L_p the rate-limiting step is mass transport in the pores and the enhancement in ion current is substantially reduced.     

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor(AI), such as the effective inductance Ls, quality factor Q,and self-resonant frequency ω_0 is analyzed based on 0.35-μm Si Ge Bi CMOS process. The simulation results show that for AI operated under fixed current density JC, the HBT lateral structure parameters have significant effect on Ls but little influence on Q and ω_0, and the larger Ls can be realized by the narrow, short emitter stripe and few emitter stripes of Si Ge HBTs. On the other hand, for AI with fixed HBT size, smaller JCis beneficial for AI to obtain larger Ls, but with a cost of smaller Q and ω_0. In addition, under the fixed collector current IC, the larger the size of HBT is, the larger Ls becomes, but the smaller Q and ω_0 become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.     

部分道路关闭引起的交通激波特性研究

本文根据实际交通中经常遇到的交通事故或部分道路施工等情况, 建立了部分道路关闭的交通流模型. 采用平均场理论分析和确定性NS元胞自动机规则分别对模型进行解析和数值模拟, 结果表明, 系统存在三种稳定的物理状态:低密度相、激波相和高密度相, 并找到了系统发生相变的临界密度. 理论分析和数值模拟能很好地符合.     

具有分形结构的SiC/SiO2界面的粗糙散射

用结构函数的方法建立了SiC粗糙表面的分形模型,用rms粗糙度Δ,分形维数D,以及相关长度L三个参量来刻画表面高度的自协方差函数,并提出了参数的计算方法.在此分形模型的基础上,能计算出SiC/SiO₂界面对沟道电子的粗糙散射.     

Ising spin glass on a D = 3 hierarchical lattice: Effects of tailed coupling distributions

Within a real-space renormalization-group framework, we approach the cubic lattice through a D = 3 diamond-like hierarchical lattice. The model is a standard, nearest-neighbor, Ising spin glass with coupling constants {J_ij} distributed according to the family of continuous probability distributions P_q(J_ij) ∝ 1/[1 + (q − 1)J_ij²/2J²]^{1/(q − 1)} (if 1 + (q − 1) J_ij²/2J² > 0, and zero otherwise; q ). Such distributions, which arise naturally in the treatment, within the recently proposed nonextensive thermostatistics, of anomalous diffusion, reproduce the usual, Gaussian case, for q → 1. Moreover, they present a second moment J_ij² proportional to (5 − 3q)⁻¹ for q < 5/3, diverging for q ≥ 5/3, but keeping a finite width at midheight. In the limit q → 3, P_q(J_ij) collapses with the abscissa, and so the width at midheight diverges. We compute the q-dependence of the spin-glass critical temperature T_c. We show numerically that T_c does not scale with J_ij^21/2 (contrary to the usual belief), but rather with the width at midheight of P_q(J_ij). Our results suggest that T_c vanishes as −1/q when q → −∞; furthermore, we verified that T_c diverges exponentially when q approaches 3 from below.     

Conductivity peaks broadening in the quantum Hall regime

We argue that it is the hopping transport that is responsible for broadening of the σ_xx peaks. Explicit expressions for the width Δν of a peak as a function of the temperature T, current J and frequency ω are found. It is shown that Δν grows with T as (T/T₁)^κ, where κ is the inverse localization-length exponent. The current J is shown to act like the effective temperature T_eff(J) ∝ J^1/2 if . Broadening of the ohmic ac-conductivity peaks with frequency ω is found to be determined by the effective temperature      

Determination of localized states in porous silicon

We determined the density of state distribution near the Fermi level in porous silicon from the analysis of the current–voltage (J–V) and the current–thickness (J–T) characteristics in the space-charge-limited-current (SCLC) regime. The distribution exhibits a minimum density at the Fermi level, which is similar to the U-shape-trap-distribution observed in crystalline Si–SiO₂ interface or in amorphous Si. Theoretical analysis well explains both the J–V and the J–L characteristics, which implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level.     

Using X(3823)→J/ψπ+π− to identify coupled-channel effects

Very recently, the Belle and BESIII experiments observed a new charmonium-like state X(3823), which is a good candidate for the D-wave charmonium ψ(1³D₂). Because the X(3823) is just near the D ¯D^∗ threshold, the decay X(3823)→ J/ψπ⁺π⁻ can be a golden channel to test the significance of coupled-channel effects. In this work, this decay is considered including both the hidden-charm dipion and the usual quantum chromodynamics multipole expansion (QCDME) contributions. The partial decay width, the dipion invariant mass spectrum distribution dΓ[X(3823) → J/ψπ⁺π⁻]/dm_π⁺_π⁻, and the corresponding dΓ[X(3823) → J/ψπ⁺π⁻]/d cos θ distribution are computed. Many parameters are determined from existing experimental data, so the results depend mainly only on one unknown phase between the QCDME and hidden-charm dipion amplitudes.     

二维圆盘颗粒体系声学行为的数值研究

数值测量了卸载过程中二维单分散圆盘颗粒系统的横波、纵波声速、声衰减系数、非线性系数随压强的变化以及声衰减系数随频率的变化.结果表明,二维(2D)圆盘颗粒体系的横波、纵波声速均随压强呈分段幂律标度:当压强P10~(-4)时,横波、纵波声速随压强的增大而减小;当P10~(-4)时,有v_t~P~(0.202),v_l~P~(0.338).进一步得到其剪切模量和体积模量的比值G/B也随压强呈幂律标度,G/B~P~(-0.502),暗示在低压强下,与三维(3D)球形颗粒体系类似,2D圆盘颗粒体系也处于L玻璃态.水平激励和垂直激励下2D圆盘颗粒系统的衰减系数随频率变化也呈现分段行为:当频率f0.05时,衰减系数不随f变化;当f0.05时,横波纵波的衰减系数α~f;当f0.35时,横波衰减系数α_T~f~2,纵波衰减系数α_L~f~(1.5).此外,竖直水平激励下的2D圆盘颗粒系统的非线性系数和衰减系数随压强也呈现与声速类似的分段规律:当P10~(-4)时,横波非线性系数β_T~P~(-0.230),其余都不随压强变化.当P10~(-4)时,两者均随压强增大呈幂律减小:β_T~P~(-0.703),β_L~P~(-0.684),α_T~P~(-0.099),α_L~P~(-0.105).进而得到2D圆盘颗粒系统中散射相关的特征长度?~*随压强呈幂律标度,当P10~(-4)时,?~*~P~(-0.595);当P10~(-4)时,?~*~P~(0.236).     

1/f Noise in dye-sensitized solar cells and NIR photon detectors

All electronic devices are plagued with 1/f noise originating from many causes. The most important factors contributing to 1/f noise in a semiconductor is believed to be recombination of carriers and their trapping at defects and impurity sites. Adsorption of moisture and electron acceptor molecules enhances the intensity of 1/f noise. Amazingly, some molecular species that strongly chelate to the semiconductor surface, suppress 1/f noise owing to passivation of the recombination sites. Thus in addition to sensitization, the dye adsorbed on the nanocrystallites plays a key role in mitigation of recombinations. For this reason dye-sensitized heterojunctions could also find application as low noise NIR photon detectors. Experiments conducted with oxide semiconductors (TiO₂, ZnO, SnO₂) indicate that the mode of binding of dyes at specific sites determines the extent to which the recombination and 1/f noise are suppressed. The transport of electrons in a nanocrystalline matrix is diffusive with a diffusion coefficient D depending on the trapping and detrapping processes. Thus passivation of trapping sites by the adsorbed dye is expected to increase the response time which can be expressed as τ  L²/D, where L = thickness of the nanocrystalline film. Measurement techniques and construction of a dye-sensitized NIR photon detector will be discussed.     

水声作用下矩形弹性-粘弹性复合板的振动和散射声近场（Ⅱ）——矩形弹性-粘弹性复合板散射声近场研究

本文根据作者前一篇文章导出的复合粘-弹性薄板弯曲振动方程给出板振动简正模式的级数解,计算和分析了声波入射时,矩形复合粘弹性障板的振动;研究了密介质中,复合板简正模振动和其二次辐射场之间作用,以及不同模式振动之间由于辐射场引起的互耦合作用;数值计算了简支矩形板各号简正模的自耦合和互耦合系数随kl₁的变化关系,（r=l₂/l₁作为参变量,k为波数,l₁,l₂分别为板的两对边边长）;并计算了复合障板在不同频率声波作用下各号模的复数振幅值;进而计算了不同频率声波作用下,板振动二次辐射声的近场声压分布。     

虚阴极产生微波的一些基本特性

用Vlasov-Poisson方程对相对论电子束在单板、双板间的传播过程进行了数值模拟,给出了单板模型空间电荷积累最大的位置,不同位置上的电流J、电子数密度n、电场E的振荡频率随入射电子数密度n₀、入射速度v₀的变化关系,双板模型空间电荷积累最大的位置,J、n、E的振荡频率随入射流J₀及两板间距离的变化关系。虚阴极位置的数值结果与稳态理论给出的结果相近,它的振荡频率符合经验公式(1~√2π)ω_peb。单板时入射电子数密度按速度服从高斯分布,能散△E_n/E_n < 10%时的数值结果给出与单能情况基本相同的结论。     

Constraint on nuclear symmetry energy imposed by f-mode oscillation of neutron stars

Due to improvements in the sensitivity of gravitational wave (GW) detectors, the detection of GWs originating from the fundamental quasi-normal mode (f-mode) of neutron stars has become possible. The future detection of GWs originating from the f-mode of neutron stars will provide a potential way to improve our understanding of the nature of nuclear matter inside neutron stars. In this work, we investigate the constraint imposed by the f-mode oscillation of neutron stars on the symmetry energy of nuclear matter using Bayesian analysis and parametric EOS. It is shown that if the frequency of the f-mode of a neutron star of known mass is observed precisely, the symmetry energy at twice the saturation density (E_sym(2ρ₀)) of nuclear matter can be constrained within a relatively narrow range. For example, when all the following parameters are within the given intervals: 220 ≤ K₀ ≤ 260 MeV, 28 ≤ E_sym(ρ₀) ≤ 36 MeV, 30 ≤ L ≤ 90 MeV, −800 ≤ J₀ ≤ 400 MeV, − 400 ≤ K_sym ≤ 100 MeV, −200 ≤ J_sym ≤ 800 MeV, E_sym(2ρ₀) will be constrained to within ${48.8}_{-5.5}^{+6.6}$ MeV if the f-mode frequency of a canonical neutron star (1.4 M_⊙) is observed to be 1.720 kHz with a 1% relative error. Furthermore, if only f-mode frequency detection is available, i.e. there is no stellar mass measurement, a precisely detected f-mode frequency can also impose an accurate constraint on the symmetry energy. For example, given the same parameter space and the same assumed observed f-mode frequency mentioned above, and assuming that the stellar mass is in the range of 1.2–2.0 M_⊙, E_sym(2ρ₀) will be constrained to within ${49.5}_{-6.8}^{+8.1}\,\mathrm{MeV}$. In addition, it is shown that a higher slope of 69 ≤ L ≤ 143 MeV will give a higher posterior distribution of E_sym(2ρ₀), ${53.8}_{-6.4}^{+7.0}\,\mathrm{MeV}$.     

Magnetic properties and percolation threshold in diluted B-spinel ZnCr2xAl2−2xS4: a study through high-temperature expansions

By making use of high-temperature series expansions (HTSE) of the correlation functions, we study the thermal and disorder variation of the short-range order (SRO) in the particular B-spinel ZnCr_2xAl_2−2xS₄. We developed the HTSE for the q-dependent static structure factor S(q) to the order 6 in reciprocal temperature including both the nearest- and next-nearest-neighbour interactions J₁ and J₂, respectively. Respecting the experimental fact that the broad diffuse peak of the neutron is situated at the particular wave vector q₀=[0 0 0.79] and is insensitive to the temperature for a given ratio of dilution x, we have estimated the thermal variation of J₁ and J₂ in the case of the pure compound.

The bond percolation threshold x_p of the ZnCr_2xAl_2−2xS₄ is determined by studying the disorder variation of the correlation length ξ. The x_p is considered as the concentration at which ξ vanishes. The obtained values are x_p=0.27 when only J₁ is considered and 0.23 when both J₁ and J₂ are taken into account.     

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

The N₂O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N₂O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10^-9 A/mm, high on/off current ratio of 10⁸, and high f_T×L_g of 13.44 GHz· μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.     

Low frequency impedance of a round superconducting wire

We calculated the electric field E on the surface of a straight superconducting wire with circular cross-section carrying AC transport current I=I_acosωt. Performing the Fourier analysis of E, we found that both components of the first harmonic have the same form: the critical current I_c in prefactor and the rest depending on the ratio F=I_a/I_c. The in-phase component leads to the classical result of loss calculation, while the out-of-phase component was derived for the first time. Thus the wire can be symbolized by a complex self-inductance L₁(I)=L₁′(I)−jL₁″(I) where L₁′ represents the reactive power while L₁″ the losses. When the lock-in amplifier, used to sort out the components of the first harmonic, is utilized in the wide-band mode, it allows one to determine the magnetic flux penetrated in the wire volume at two significant moments of the AC cycle: at zero current (remanent flux) and at the amplitude value of current.     

Fabrication, microstructure and critical current density of screen-printed Ag-(Bi, Pb)2Sr2Ca2Cu3Ox superconducting tapes

The influence of the sintering conditions on the microstructure and critical current density J_c has been studied on screen-printed Ag-(Bi, Pb)₂Sr₂Ca₂Cu₃O_x tapes with a ceramics mono-layer core. Three kinds of fabrication processes, which consist of a combination of cold working (rolling and/or pressing) and sintering, are applied. Four times repetition of pressing and sintering after the pre-sintering produces the highest c-axis alignment and achieves J_c= 1.5 × 10⁴ A/cm² (77 K, 0 T). The J_c versus θ data with an angle θ between B and the c-axis elucidate the relation between the anisotropy ratio γ=J_c(Bc)/J_c(B|c and the half-height angular width Δθ of a peak for Bc. This is related to both grain alignment and the J_c value. An increase in J_c, which comes from an improvement for grain alignment, enhances γ and narrows Δθ. The J_c versus θ data are fitted to the expression J_c(B, θ)=J _c(B, 90°)/[(γ−1)|cos θ|ⁿ+1] by regarding both γ and n as adjustable parameters. Fabrication of screen-printed tapes with multilayers (1≤N≤5) is presented, where the critical current increases from 8.0 A to 30.2 A at 77 K and 0 T as N increases.     

LiAl分子基态、激发态势能曲线和振动能级

利用单双激发多参考组态相互作用方法获得了LiAl分子基态X¹∑⁺及七个激发态a³∏, A¹∏, b³∑⁺, c³∑⁺, B¹∏, C¹∑⁺, d³∏的势能曲线, 通过势能曲线得到各态的平衡核间距R_e, 进而求得绝热激发能和垂直激发能.计算结果表明:c³∑⁺ 电子态是一个不稳定的排斥态, A¹∏态是一个较弱的束缚态, 其余6个电子态均为束缚态; b³∑⁺与 c³∑⁺态之间存在预解离现象; 8个电子态分别解离到两个通道, 即Li(²S)+Al(²P⁰)与Li(²P⁰)+Al(²P⁰). 接着将势能曲线拟合到Murrel-Sorbie解析势能函数形式, 据此获得各态的光谱数据:基态X¹∑⁺的平衡键长为0.2863 nm, 谐振频率为316 cm^-1, 解离能D_e为1.03 eV, 激发态a³∏, A¹∏, b³∑⁺, c³∑⁺, B¹∏, C¹∑⁺, d³∏的垂直激发能依次为0.27, 0.83, 1.18, 1.14, 1.62, 1.81, 2.00 eV; 解离能依次为1.03, 0.82, 0.26, 排斥态, 1.54, 1.10, 0.93 eV, 相应谐振频率 ω_e为339, 237, 394, 排斥态, 429, 192, 178 cm^-1. 通过求解核运动的薛定谔方程找到了J=0时 LiAl分子7个束缚电子态的振动能级和转动惯量. 关键词： LiAl 光谱常数 势能曲线 振动能级     

Critical behavior of transverse and longitudinal ac susceptibilities in a random anisotropy magnet a-Dy16Fe84

We have investigated critical lines in the H-T plane in a random anisotropy magnet (RAM) a-Dy₁₆Fe₈₄ with a small effective ratio of the anisotropy (D) to the exchange constant (J) by means of ac susceptibility (χ) in static fields H parallel and perpendicular to the ac field. We found that the transverse χ exhibits an anomaly along the irreversible line H(T_f) determined by previous magnetization measurements, while the longitudinal χ does so along a characteristic line H(T_i) in a lower temperature region. Above H(T_f) we also found an extra characteristic line H(T_c). The lines were almost independent of the measured frequency. Both the present results and previous magnetization results suggest that an equilibrium phase transition occurs, and the critical lines analogous to those in Heisenberg spin glasses are present in a weak RAM.     

Effective activation energy Ue(T,J,H) in textured Bi1.84Pb0.4Sr2Ca2Cu3Oy silver-clamped thick films

We have measured the resistivity of textured Bi_1.84Pb_0.4Sr₂Ca₂Cu₃O_y silver-clamped thick films as a function of temperature, current density ranging from 10 to 1×10³ A/cm² and magnetic field up to 0.3 T. We find that the effective activation energy U_e follows U_e(T,J,H)=U₀(1−T/T_p)^mln(J_c0/J)H⁻ with m=1.75 for Hab-plane and 2.5 for Hc-axis and =0.76 for Hab and 0.97 for Hc, for the current density regime above 100 A/cm², where T_p is a function of applied magnetic field and current density. This result suggests the effective activation energy U_e be correlated with the temperature, current density and magnetic field. The possible dissipative mechanisms responsible for the temperature, current density and magnetic field dependence of the effective activation energy are discussed.