重离子产生δ电子对SRAM单粒子翻转的影响

随着微电子器件集成度增加,由入射离子在器件灵敏区内引起的δ电子分布对器件单粒子效应的影响越来越显著;尤其是它极易引发多位翻转,严重影响设计加固的有效性。首先利用蒙特卡罗软件包Geant4模拟得到重离子在器件灵敏区内产生的δ电子分布,分析得出以下规律:入射离子单核能越高,其产生δ电子分布的径向范围越大;单核能相同的不同种离子,原子序数越大其产生的δ电子密度越大。其次,通过模拟一款45 nm静态随机存储器的单粒子翻转效应,说明δ电子和灵敏区分布共同影响器件的多位翻转。当器件灵敏区间距一定时,多位翻转率随入射离子能量的升高先上升后下降;在多位翻转率峰值和布喇格峰之间,多位翻转率随入射离子线性能量传输(LET)值的升高而降低,在该区域两侧多位翻转率随离子LET值的升高而升高。     

重离子微束单粒子翻转与单粒子烧毁效应数值模拟

用束径0.4μm的微束重离子数值模拟了单粒子翻转SEU和单粒子烧毁效应SEB.单粒子翻转给出了不同离子注入后漏区的电压(电流)随时间变化规律;计算了CMOSSRAM电路的单粒子翻转;给出了收集电荷随LET值的变化曲线并给出了某一结构器件的临界电荷;VDMOS器件单粒子烧毁给出了不同时刻沿离子径迹场强、电位线、电流和碰撞离化率的变化.     

HfO2基铁电场效应晶体管读写电路的单粒子翻转效应模拟

使用器件-电路仿真方法搭建了氧化铪基铁电场效应晶体管读写电路,研究了单粒子入射铁电场效应晶体管存储单元和外围灵敏放大器敏感节点后读写数据的变化情况,分析了读写数据波动的内在机制.结果表明:高能粒子入射该读写电路中的铁电存储单元漏极时,处于"0"状态的存储单元产生的电子空穴对在器件内部堆积,使得栅极的电场强度和铁电极化增大,而处于"1"状态的存储单元由于源极的电荷注入作用使得输出的瞬态脉冲电压信号有较大波动;高能粒子入射放大器灵敏节点时,产生的收集电流使处于读"0"状态的放大器开启,导致输出数据波动,但是其波动时间仅为0.4 ns,数据没有发生单粒子翻转能正常读出.两束高能粒子时间间隔0.5 ns先后作用铁电存储单元漏极,比单束高能粒子产生更大的输出数据信号波动,读写"1"状态的最终输出电压差变小.     

静态随机存储器单粒子翻转的Monte Carlo模拟

利用蒙特卡罗(Monte Carlo)方法，对10—20MeV 中子在静态随机存储器(SRAM)中引起的单粒子翻转进行了模拟，着重对中子在SRAM 灵敏区引起的电离能量沉积进行了计算，并对中子引起单粒子翻转过程相关物理量进行了计算.这些计算模拟结果为了解10—20MeV 中子引起SRAM 单粒子翻转过程提供了详细的统计信息，为SRAM 的抗辐射加固提供相关参考信息. 关键词： SRAM单粒子翻转 Monte Carlo 模拟 能量沉积     

静态单粒子翻转截面的获取及分类

 为了评估静态随机访问存储器(SRAM)型现场可编程门阵列(FPGA)器件的单粒子效应,寻求单粒子翻转敏感部位,以XCV300PQ240为实验样品,利用重离子辐照装置详细测试了该器件的静态翻转截面,并根据配置存储单元用途的不同,对翻转数据进行了分类。结果表明：SRAM型FPGA的内部存储单元对单粒子翻转效应十分敏感;配置存储器翻转主要由查找表(LUT)及互连线资控制位造成,这两者的翻转占总翻转数的97.46%;配置存储器中各类资源的单粒子翻转(SEU)敏感性并不一致,输入输出端口(IOB)控制位和LUT的单粒子翻转的敏感性远高于其它几类资源,但LUT在配置存储器中占有很大比例,在加固时应予以重点考虑。     

静态单粒子翻转截面的获取及分类

为了评估静态随机访问存储器(SRAM)型现场可编程门阵列(FPGA)器件的单粒子效应,寻求单粒子翻转敏感部位,以XCV300PQ240为实验样品,利用重离子辐照装置详细测试了该器件的静态翻转截面,并根据配置存储单元用途的不同,对翻转数据进行了分类。结果表明：SRAM型FPGA的内部存储单元对单粒子翻转效应十分敏感;配置存储器翻转主要由查找表(LUT)及互连线资控制位造成,这两者的翻转占总翻转数的97.46%;配置存储器中各类资源的单粒子翻转(SEU)敏感性并不一致,输入输出端口(IOB)控制位和LUT的单粒子翻转的敏感性远高于其它几类资源,但LUT在配置存储器中占有很大比例,在加固时应予以重点考虑。     

中子引起单粒子翻转过程的Monte Carlo计算模拟

从中子与硅原子相互作用的物理机理出发,利用Monte Carlo方法编制了中子引起单粒子翻转的计算模拟程序,并对14 MeV中子环境下的16K位静态存储器硅片翻转过程中的物理量进行了计算,同时可为中子引起的单粒子翻转的研究提供截面和描述内部物理过程的参考数据。     

单粒子翻转脉冲激光模拟的能量阈值的计算

 根据光的吸收机理,分析了单粒子效应脉冲激光模拟实验中所需用的脉冲激光的特点,探讨了脉冲激光单粒子效应的Monte Carlo计算模拟途径。在只考虑光电效应的简化下,得到存储器硅片单粒子翻转时入射脉冲激光能量阈值与临界电荷的计算关系式,进而给出该硅片的翻转截面的计算公式。在给定了存储器硅片的临界电荷的情况下,对入射脉冲激光能量阈值和单粒子翻转截面进行了计算。     

单粒子翻转脉冲激光模拟的能量阈值的计算

根据光的吸收机理,分析了单粒子效应脉冲激光模拟实验中所需用的脉冲激光的特点,探讨了脉冲激光单粒子效应的Monte Carlo计算模拟途径。在只考虑光电效应的简化下,得到存储器硅片单粒子翻转时入射脉冲激光能量阈值与临界电荷的计算关系式,进而给出该硅片的翻转截面的计算公式。在给定了存储器硅片的临界电荷的情况下,对入射脉冲激光能量阈值和单粒子翻转截面进行了计算。     

Monte Carlo方法在单粒子翻转数值模拟中的应用

描述了在单粒子翻转数值模拟中的一种有效方法-Monte Carlo方法,并对该方法中的粒子输运过程和相关的随机抽样进行了描述.对14MeV的中子从存储器硅片表面随机入射引起的单粒子翻转进行了计算和分析,同时计算了Monte Carlo方法引起的误差.     

基于Geant4的卢瑟福散射计算机模拟

利用Geant4对卢瑟福散射实验进行仿真模拟,改变模拟过程中的相关参数以达到不同实验条件的要求。对模拟过程中收集的数据进行分析得到的结果符合卢瑟福散射关系式。这说明利用计算机模拟卢瑟福散射实验是可行的。本文中的实验对大学物理实验教学的开展有很大的意义。     

Geant4模拟在特洛伊木马方法中的应用

由于低能带电粒子核反应截面直接测量遇到的库仑位垒和电子屏蔽势的困难,基于准自由反应机制的特洛伊木马方法得到特别关注。利用Geant4模拟的结果,与在中国原子能研究院串列加速器上通过三体反应9Be+2H→8Be+2H+n对两体反应9Be+1H→8Be+2H的反应截面做的间接测量实验数据进行了比较,这是Geant4模拟在特洛伊木马方法中的首次应用。通过对模拟数据研究,提高了对实验数据的理解,也检验了模拟系统的可靠性,对今后的实验设计和改进提供了有益的意见。     

用Geant4对相对论电子的动能与动量关系测量实验的模拟与拓展

基于蒙特卡罗方法的Geant4计算机模拟软件平台,对传统的相对论实验进行模拟,实验直观而形象,数据精准可信,有助于学生加深理论知识和实验内容的理解.     

Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM

Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used in atmospheric environments,3D ICs are irradiated inevitably by neutrons.In this paper,a 3D die-stacked SRAM device is constructed based on a real planar SRAM device.Then,the single event upsets(SEUs)caused by neutrons with different energies are studied by the Monte Carlo method.The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV.The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent,but the specific values are different.The SEU cross-section is shown to be dependent on the threshold of linear energy transfer(LETth)and thickness of the sensitive volume(Tsv).The secondary particle distribution and energy deposition are analyzed,and the internal mechanism that is responsible for this difference is illustrated.Besides,the ratio and patterns of multiple bit upset(MBU)caused by neutrons with different energies are also presented.This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.     

Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions

The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation.     

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Geant4 Monte Carlo simulation results of the single event upset(SEU) induced by protons with energy ranging from0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3 D) die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3 D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU) ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3 D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the onorbit upset rate for the 3 D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3 D die-stacked device.     

Validation of Geant4 Simulation and Digitization of a SiPM-on-Tile System

Physics of Atomic Nuclei - The increase of transverse segmentation is a trend in developments of modern calorimeter systems based on different technologies. The scintillator calorimeters assembled...     

Simulation of positron backscattering and implantation profiles using Geant4 code

For the proper interpretation of the experimental data produced in slow positron beam technique, the positron implantation properties are studied carefully using the latest Geant4 code. The simulated backscattering coefficients, the implantation profiles, and the median implantation depths for mono-energetic positrons with energy range from 1 keV to 50 keV normally incident on different crystals are reported. Compared with the previous experimental results, our simulation backscattering coefficients are in reasonable agreement, and we think that the accuracy may be related to the structures of the host materials in the Geant4 code. Based on the reasonable simulated backscattering coefficients, the adjustable parameters of the implantation profiles which are dependent on materials and implantation energies are obtained. The most important point is that we calculate the positron backscattering coefficients and median implantation depths in amorphous polymers for the first time and our simulations are in fairly good agreement with the previous experimental results.     

Integration of Geant4 with the Gaudi Framework

The GAUDI software framework is to be used for all event-processing applications in the LHCb experiment.The GEANT4 toolkit has been integrated into GAUDI to form the basis of the LHCb simulation program GAUSS.The benefits of this approach are that it permits re-use of basic services,such as persistency,interactivity and data visualization,as well as physics algorithms that were originally developed in the context of the reconstruction and analysis programs.Following the GAUDI philosophy,the integration has been achieved by developing a number of services with abstract interfaces that can be plugged in at run-time.We describe the overall design and details of the components for interfacing the detector geometry,the primary interaction and the output from tracking particles through the detector.