Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

The influence of the metric of linear energy transfer （LET） on single event upset （SEU）, particularly multiple bit upset （MBU） in a hypothetical 90-nm static random access memory （SRAM） is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 2~9Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis （MUFPSA）. In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that （i） with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; （ii） due to the higher ion relative velocity and longer range of ~ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.     

Modeling the applicability of linear energy transfer on single event upset occurrence

Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.     

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis(MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset(SEU) effect, including the deposited energy,traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of209 Bi have a wider distribution of energy deposition than132 Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer(LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.     

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9% 84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm 2 ), which can be partially explained by the fact that the MBU rate for tilted ions of 30 is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm 2 ), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.     

Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions

The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation.     

Cross Section of Heavy Ion Reaction （14.5 MeV/u） ^132Xe ＋ Bi

We investigate the cross section of the heavy ion reaction （14.5 MeV/u） ^132Xe ＋ Bi by using a CR-39 plastic track detector. The target-detector assembly is exposed at UNILAC beam facility of GSI, Germany. After etching under appropriate etching conditions, the detector is scanned for multipronged events produced as a result of interactions of projectile ions with target atoms. The elastic events are separated from binary events and used for the determination of the quarter-point angle. The quarter-point angle obtained is used to determine the total reaction cross section. The total experimental reaction cross section is determined by using statistics of inelastic events of two-pronged and higher multiplicity events. The experimental reaction cross sections determined by using elastic and inelastic data observed in the reaction under study are found to be in good agreement with the theoretically calculated value of reaction cross section using a sharp cutoff model.     

不同LET C离子束对粘红酵母菌的突变效应分析

以粘红酵母菌Rhodotorula glutinis AY 91015为材料, 研究了不同传能线密度（LET）的C离子对粘红酵母菌的失活截面和突变截面, 评估了不同LET的C离子对微生物的失活效应和突变效应。 结果表明, C离子LET为120.0 keV/μm时, 单个粒子对粘红酵母菌的失活截面最大, 为4.37 μm2, 接近酵母菌细胞核的平均核截面; LET为96.0 keV/μm时, 单个粒子对粘红酵母菌的突变截面最大。 通过对C离子束致突变能力的分析发现, C离子在LET为58.2 keV/μm时突变能力最强, 这一结果显示在经C离子辐照后存活下来的粘红酵母菌中, 可以引起有效突变的最佳LET为58.2 keV/μm左右, 此时所对应的碳离子能量约为35 MeV/u。 这些结果表明, C离子对粘红酵母菌的最佳致死效应和最佳致突变效应存在于不同的能量区域。 To evaluate inactive and mutagenic effects of carbon beam at different LET, the inactivation cross section and mutation cross section induced by carbon beams of different LET values were investigated in a red yeast strain Rhodotorula glutinis AY 91015. It was found that the maximum inactivation cross section of 4.37μm2 , which was very close to the average nucleus cross section, was at LET of 120.0 keV/μm. The maximum mutation cross section was at LET of 96.0 keV/μm. Meanwhile, the highest mutagenicity of carbon ion was found around 58.2 keV/μm. It implied that the most efficient LET to induce mutation in survival yeasts was 58.2 keV/μm, which corresponded to energy of 35 MeV/u carbon beam. The most effective carbon beam to induce inactivation and mutation located at different energy region.     

Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

The impact of ionizing radiation effect on single event upset(SEU) sensitivity of ferroelectric random access memory(FRAM) is studied in this work. The test specimens were firstly subjected to ~(60)Co γ-ray and then the SEU evaluation was conducted using ~(209)Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.     

重离子在14-nm FinFET SRAM器件引起的单粒子翻转

通过重离子实验研究了14-nm FinFET工艺静态随机存取存储器(SRAM)的单粒子翻转(SEU)特性。通过使用Weibull函数拟合SEU截面获得该器件的线性能量转移(LET)阈值:0.1 MeV/(mg/cm2)。对多位翻转(MBU)贡献的统计结果表明,当LET等于40.3 MeV/(mg/cm2)时,MBU的占比超过95%。此外,FinFET SRAM的SEU截面呈现出与Fin相关的入射角度的各向异性。该研究对基于FinFET工艺的抗辐射CMOS集成电路(IC)的设计具有一定的指导作用。     

Ep≤63 GeV 质子入射铅、铋引起的中子产生双微分截面的模拟(英文)

加速器驱动次临界系统(ADS) 液态Pb-Bi 散裂靶的设计中,需要可靠的理论计算工具精确地预言几个GeV 能量范围的质子引起的散裂反应产生的各种粒子和核素。利用蒙特卡罗模拟软件包Geant4 计算研究了800 MeV至3 GeV 质子入射铅、铋材料引起的中子产生双微分截面。比较了Geant4 不同物理模型得到的模拟结果与现有的实验数据。其中,Geant4 的QGSP BERT和QGSP INCL ABLA 物理模型模拟结果很好地再现了实验数据。本工作证实了Geant4 蒙特卡罗模拟软件包适合用于能量高达3 GeV 的质子入射铅、铋引起的中子产生双微分截面的模拟计算。A detailed design of the liquid Pb-Bi spallation target of the Accelerator Driven Systems (ADS) requires powerful and reliable computational tools that can accurately predict particles and nuclides production by the proton induced spallation reactions in the energy range of a few GeV. In this paper, the neutron production double-differential cross sections for Pb and Bi target materials at incident proton kinetic energies between 800 MeV and 3 GeV are studied by calculations with Monte Carlo simulation package Geant4. The simulated results of Geant4 with several physics models are compared with available experimental data. The simulated results generated by QGSP BERT and QGSP INCL ABLA physics models of Geant4 well reproduce the available experimental data. The present results validated that Geant4 Monte Carlo simulation package is suitable for simulations of neutron production double-differential cross sections of proton induced reaction on Pb and Bi targets in the incident energy range up to 3 GeV.     

半导体器件单粒子效应的加速器模拟实验

 着重描述了应用加速器开展半导体器件的单粒子效应实验研究的方法。采用金箔散射法可以降低加速器束流几个量级，从而满足半导体器件单粒子效应实验的要求。研制的弱流质子束流测量系统和建立的质子注量均匀性测量方法解决了质子注量的准确测量问题。实验测得静态随机存取存储器的质子单粒子翻转截面为10^-7 cm²·bit^-11量级，单粒子翻转重离子LET阈值为4～8MeV·cm²/mg，重离子单粒子翻转饱和截面为10^-7 cm²·bit^-1量级。     

高能质子单粒子翻转效应的模拟计算

在分析质子与硅反应的基础上,提出质子单粒子翻转截面理论计算模型,建立了模拟计算方法.计算得到了不同能量的高能质子在存储单元的灵敏区内沉积的能量.指出高能质子主要通过与硅反应产生的重离子在存储单元灵敏区内沉积能量,产生电荷,导致单粒子效应,得到了单粒子翻转截面与质子能量以及随临界电荷变化的关系.并将计算得到的单粒子翻转截面与实验数据进行了比较.     

重离子产生δ电子对SRAM单粒子翻转的影响

随着微电子器件集成度增加,由入射离子在器件灵敏区内引起的δ电子分布对器件单粒子效应的影响越来越显著;尤其是它极易引发多位翻转,严重影响设计加固的有效性。首先利用蒙特卡罗软件包Geant4模拟得到重离子在器件灵敏区内产生的δ电子分布,分析得出以下规律:入射离子单核能越高,其产生δ电子分布的径向范围越大;单核能相同的不同种离子,原子序数越大其产生的δ电子密度越大。其次,通过模拟一款45 nm静态随机存储器的单粒子翻转效应,说明δ电子和灵敏区分布共同影响器件的多位翻转。当器件灵敏区间距一定时,多位翻转率随入射离子能量的升高先上升后下降;在多位翻转率峰值和布喇格峰之间,多位翻转率随入射离子线性能量传输(LET)值的升高而降低,在该区域两侧多位翻转率随离子LET值的升高而升高。     

中子引起单粒子翻转过程的Monte Carlo计算模拟

从中子与硅原子相互作用的物理机理出发,利用Monte Carlo方法编制了中子引起单粒子翻转的计算模拟程序,并对14 MeV中子环境下的16K位静态存储器硅片翻转过程中的物理量进行了计算,同时可为中子引起的单粒子翻转的研究提供截面和描述内部物理过程的参考数据。     

空间高能离子在纳米级SOI SRAM中引起的单粒子翻转特性及物理机理研究

基于蒙特卡罗方法研究空间高能离子在65—32 nm绝缘体上硅静态随机存取存储器(SOI SRAM)中产生的灵敏区沉积能量谱、单粒子翻转截面和空间错误率特性及内在的物理机理.结果表明:单核能为200 MeV/n的空间离子在60—40 nm厚的灵敏区中产生的能损歧离导致纳米级SOI SRAM在亚线性能量转移阈值区域出现单粒子翻转;宽的二次电子分布导致灵敏区仅能部分收集单个高能离子径迹中的电子-空穴对,致使灵敏区最大和平均沉积能量各下降25%和33.3%,进而引起单粒子翻转概率降低,以及在轨错误率下降约80%.发现俘获带质子直接电离作用导致65 nm SOI SRAM的在轨错误率增大一到两个数量级.     

纳米DDR SRAM器件重离子单粒子效应试验研究

针对90 nm和65 nm DDR（双倍数率）SRAM器件,开展与纳米尺度SRAM单粒子效应相关性的试验研究。分析了特征尺寸、测试图形、离子入射角度、工作电压等不同试验条件对单粒子翻转（SEU）的影响和效应规律,并对现有试验方法的可行性进行了分析。研究表明:特征尺寸减小导致翻转截面降低,测试图形和工作电压对器件单粒子翻转截面影响不大;随着入射角度增加,多位翻转的增加导致器件SEU截面有所增大;余弦倾角的试验方法对于纳米器件的适用性与离子种类和线性能量转移（LET）值相关,具有很大的局限性。     

Pattern dependence in synergistic effects of total dose on single-event upset hardness

The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.     

Nuclear stopping as a probe for in-medium nucleon-nucleon cross sections in intermediate energy heavy ion collisions

Using an isospin-dependent quantum molecular dynamics, nuclear stopping in intermediate heavy ion collisions has been studied. The calculation has been done for colliding systems with different neutron-proton ratios in beam energy ranging from 15 MeV/ u to 150 MeV/ u. It is found that, in the energy region from above Fermi energy to 150 MeV/ u, nuclear stopping is very sensitive to the isospin dependence of in-medium nucleon-nucleon cross section, but insensitive to symmetry potential. From this investigation, we propose that nuclear stopping can be used as a new probe to extract the information on the isospin dependence of in-medium nucleon-nucleon cross section in intermediate energy heavy ion collisions.     

14 nm FinFET和65 nm平面工艺静态随机存取存储器中子单粒子翻转对比

使用中国散裂中子源提供的宽能谱中子束流,开展14 nm FinFET工艺和65 nm平面工艺静态随机存取存储器中子单粒子翻转对比研究,发现相比于65 nm器件,14 nm FinFET器件的大气中子单粒子翻转截面下降至约1/40,而多位翻转比例从2.2%增大至7.6%,源于14 nm FinFET器件灵敏区尺寸(80 nm×30 nm×45 nm)、间距和临界电荷(0.05 fC)的减小.不同于65 nm器件对热中子免疫的现象,14 nm FinFET器件中M0附近10B元素的使用导致其表现出一定的热中子敏感性.进一步的中子输运仿真结果表明,高能中子在器件灵敏区中产生的大量的射程长、LET值大的高Z二次粒子是多位翻转的产生诱因,而单粒子翻转主要来自于p,He,Si等轻离子的贡献.