20 kV高压脉冲幅度校准装置设计

针对高压脉冲幅度的量值传递需求,开展了脉冲幅度1～20 kV、脉宽1～100μs的高压脉冲幅度校准装置设计。校准装置以高压MOSFET器件为核心,搭建多级Marx结构实现高压脉冲成型,同时通过截尾回路的设计缩短脉冲下降时间,实现矩形脉冲波形的输出。在Marx结构基础上开展装置整体设计,通过触发脉冲信号及高压直流电源电压调节脉宽与幅度,通过隔离电源及光信号保证了高压隔离强度。装置采用高准确度高压探头和数据采集卡构成校准装置的内部测试系统,其测量值作为校准装置的标准量值,经评定装置脉冲幅度不确定度为2%,并通过两台比对法进行了验证。采用其他多型高压探头对校准装置进行实验测试,结果表明与低压脉冲校准源测试相比,高压脉冲可明显有效地表征高压探头的性能及测量准确度,同时本装置也可作为高压脉冲发生器应用于脉冲功率领域其他用途。     

Dispersion-Compensation Device with Waveguide Grating Routers

A compact transmissive waveguide-type dispersion compensation device that uses waveguide grating routers is proposed. This device provides dispersion compensation in long-haul fiber transmission lines and can also be used as a pulse compressor for ultrashort optical pulse generation. A device for the pulse compression of picosecond-length optical pulses has been designed and is numerically analyzed. The proposed device works as a compact (on the centimeter order) and transmissive pulse compressor for picosecond optical pulses.     

斩波法在激光微能量计标定中的应用

针对激光微能量测量的问题,提出一种激光微能量计标定新方法与装置。研究内容包括使用稳功率连续激光作为光源,通过基于斩波的脉冲发生器组件产生微能量的脉冲激光,分别使用脉冲宽度测量组件与功率测量组件进行采集、软件分析,计算微能量值及通过比对给出待标定能量计的修正系数,计算机自动控制。结果表明,该方法获得的脉冲激光波形稳定,脉冲宽度测量不确定度为0.08%,激光功率测量不确定度为0.25%,实现了对0.1 pJ～1 mJ的激光能量进行准确复现和传递。     

Ultra-high on/off ratio optical trigger based on SOI–SOA waveguide

We present a device able to perform an all-optical trigger by utilizing the cascaded silicon-on-insulator (SOI) and semiconductor-optical-amplifier (SOA) optical waveguides, where both the controlling pulse and the signal pulse are co-propagating along the device. The results of numerical simulations show that the all-optical trigger behavior with ultra-high on/off ratio can be easily achieved by adjusting the device parameters. To improve and optimize the optical trigger operation, the negative initial delay (the signal pulse before the controlling pulse) and the positive initial delay (the signal pulse after the controlling pulse) are considered for performing the optical trigger operation.     

基于分数比可饱和脉冲变压器的全固态脉冲驱动源初步研究

设计了一台基于分数比可饱和脉冲变压器的全固态脉冲驱动源,其核心部件为分数比可饱和脉冲变压器,用来实现固态磁开关、脉冲调制、电压升压等功能,再借助Marx技术、磁开关技术和反谐振网络调制技术建立全固态脉冲驱动源,初步实验结果表明当直流电源提供100 V的充电电压时,该全固态脉冲驱动源可输出14.4 kV左右的准方波信号,脉宽约194 ns,验证了该技术方案实现输出百纳秒准方波信号的可行性,为建立百MW长脉冲信号输出的全固态脉冲驱动源模块提供了设计思路。     

基于脉冲形成线充电的脉冲压缩技术

利用脉冲压缩技术,将具有一定初始电压的高阻抗长脉冲形成线对低阻抗短脉冲形成线充电到一定值时,其输出开关导通,在其后的传输线上可以产生高功率短脉冲。给出了脉冲压缩理论分析;前级脉冲驱动源采用GW级纳秒脉冲形成线,其特性阻抗为40Ω、电长度为3.9ns,输出脉冲宽度约8ns;研制了与前级脉冲驱动源匹配的脉冲压缩装置和变阻抗传输线,考虑到脉冲压缩装置低阻抗形成线绝缘击穿和开关导通限制,选取脉压装置形成线特性阻抗6.5Ω、电长度0.5ns。利用GW级纳秒脉冲驱动源开展了脉冲压缩实验,得到了输出功率增益达4倍左右的脉宽1.5ns高功率短脉冲,输出脉冲功率增益与理论值基本相符。     

飞焦级脉冲激光能量测量方法研究

为解决1 fJ～1 pJ脉冲激光能量的测量问题,提出了一种基于时域波形积分的飞焦级脉冲激光能量测量方法。该方法采用光电倍增管（PMT）获得飞焦级脉冲激光的响应信号,该微弱响应信号经放大、校准与激光脉冲时域波形积分后实现飞焦级脉冲激光能量测量。根据该方法设计了飞焦级脉冲激光能量测量装置,并分析了该装置的测量不确定度。实验表明,该装置实现了波长1 064 nm、脉冲宽度5 ns～1 s、能量范围1 fJ～1 pJ的脉冲激光光源的能量测量,测量不确定度为15.8%。     

紧凑型高功率亚纳秒脉冲压缩装置的设计研制

分析了三传输线型脉冲压缩装置的原理,从提高功率增益和小型化角度,在脉冲压缩装置中设计了一种3起端并联绕线的内置型高阻螺旋线结构。建立电路仿真模型和三维结构电磁场仿真模型,分析了高阻螺旋线特征参数对功率增益的影响。根据优化后的结果研制出紧凑型高功率亚纳秒脉冲压缩装置,经测试,前级输入脉冲宽度8 ns,功率1 GW时,输出脉冲宽度1.5 ns,功率3.7 GW,功率增益3.7。经过30万次运行考核,装置内部无滑闪和击穿现象,验证了设计可靠性。     

微波脉冲频率与重频对限幅器热损伤效应的影响

基于PIN限幅器的电路与器件物理混合模式(Mixed-Mode)模型,考虑大功率微波作用下器件的高温强电场多物理过程,模拟分析了频率及重频等微波脉冲参数对限幅器热损伤过程的影响,数值模拟结果表明,不同频率的微波脉冲损伤PIN限幅器存在"拐点"频率,"拐点"频率的微波脉冲附近需要更多的能量(脉宽)损伤器件;重频脉冲前一个脉冲作用后,器件峰值温度近似负指数关系快速下降,器件处于高温时更容易损伤,热积累效应使重频脉冲较单个脉冲更容易毁伤器件。     

掺铒光纤环镜中超短光孤子的放大与压缩Ⅱ.环镜及输入脉冲特性对放大结果的影响

最近的研究发现,用掺铒光纤环镜放大并压缩超短光孤子不仅能避免常规掺铒光纤放大器中由于非线性效应引起的孤子畸变,而且可克服绝热放大技术中放大器长度随输入脉宽增大而指数规律增大的困难。进一步研究了环镜及输入脉冲特性对放大结果的影响。数值计算表明,对于确定的输入脉冲,当环镜参量(环镜长度、增益、耦合器功率耦合系数)在较大范围内变化时,环镜放大器的孤子输出性能基本稳定。对于确定的环镜,输入脉冲形状的变化、初始输入功率的起伏以及高阶效应等因素对放大结果的影响较小;相对而言,初始频率啁啾对输出孤子宽度的影响较大,但对输出孤子质量的影响并不严重。     

Femtosecond pulse generation using stimulated Raman scattering in integrated silicon optical waveguide device

To generate ultrafast femtosecond optical pulses, we propose a model of an integrated device consisting of a Mach-Zehnder interferometer (MZI) with two symmetric 3 dB directional couplers and a straight waveguide based on the single-mode silicon-on-insulator (SOI) optical waveguide. The principle of pulse generation in the presented device is based on the strong stimulated Raman scattering (SRS) in silicon; the center wavelength of the pulse generated is tunable by changing the center wavelength of the co-propagating pump pulse. Numerical results show that, when a continuous wave (CW) with a weak power at 1670 nm wavelength and a pump pulse with a high peak power at 1550 nm wavelength are co-propagating, a narrow femtosecond pulse with a pulse width (full width at half maximum, FWHM) of ∼60 fs (FWHM of the pump pulse is 166.5 fs) can be achieved in the device proposed. In addition, when the waveguide length, pump peak power, and pump-pulse width are fixed, the properties of generated femtosecond pulse depend strongly on the incident chirp of the pump pulse and the CW power.     

Effects of microwave pulse-width damage on a bipolar transistor

This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves (HPMs) through the injection approach. The dependences of the microwave damage power, P, and the absorbed energy, E, required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method. A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out. By means of a two-dimensional simulator, ISE-TCAD, the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively. The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different, while only one hot spot exists under the injection of dc pulses. The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy, respectively. The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.     

A self-setting attenuator for laser pulse energy stabilization

An active optical filter has been developed which when applied to single shot pulsed lasers dramatically improves the pulse to pulse energy reproducibility, essentially eliminating shot to shot fluctuations and day to day drift. The device acts as an intelligent (i.e. self setting) electro optic attenuator, which samples the input laser pulse and applies an appropriate transmission correction to that same laser pulse to give a quasi-constant output energy. The basic insertion loss can be as low as 50%. We present both the design and experimental demonstration of the device.     

超高速脉冲晶闸管设计及特性

介绍一种超高速脉冲半导体器件,该器件属于穿通型器件,电压可达到5000V,电流上升率可以达到20kA/μs以上,根据参数调配,脉冲峰值电流可以达到数百kA。该器件采用多元胞集成结构,采用缓冲层与阳极透明层相结合的扩散技术,使其在压降和开通等方面相对于传统的晶闸管原理开关有更强的优势。并且,该超高速脉冲器件在工艺设计及实现上进行了优化,使生产条件易满足。     

无人机收发信机快沿电磁脉冲效应研究

为了探究快沿电磁脉冲(FRTEMP)对无人机收发信机的损伤效应,以某型无人机收发信机为研究对象,通过快沿双指数脉冲Marx源与GTEM室模拟产生快沿电磁脉冲对收发信机进行辐照实验。以收发信机是否损坏无法工作为收发信机是否受到电磁脉冲损伤的判别依据,同时进一步检测收发信机内部电路具体损坏器件。实验结果表明,快沿电磁脉冲能够造成无人机收发信机损坏,得到了导致无人机收发信机损坏的快沿电磁脉冲场强阈值。对损坏的无人机收发信机进行机理分析和检测,结果表明,本振电路损坏导致收发信机无法输出工作信号,而锁相环是导致本振无法工作的的关键原因,通过定位到具体受损器件可以进行进一步脉冲防护工作以及为易损器件加装防护提供基础。     

GGMOS型静电放电防护器件的高功率微波效应北大核心CSCD

采用基于半导体漂移扩散模型的数值模拟软件对高功率微波(HPM)作用下GGMOS型的静电放电(ESD)防护器件效应进行了数值模拟研究。对ESD器件在HPM作用下的响应特性及器件内部的物理图像进行了数值模拟。数值模拟的结果表明,外部注入HPM信号的幅值和频率是影响ESD器件的因素,在加载30ns脉宽的HPM脉冲作用下,器件内部达到的最高温度与信号幅值成正指数关系。在给ESD注入相同幅值的HPM信号时,频率越大,器件达到失效温度所需要的时间越长。     

Generation of 1.5-12 ns width-tunable 532 nm pulses by adopting laser-induced plasma shutter technique

The pulse-shaping technique has found widespread applications in nonlinear optics and material processing. Experimental research on laser-induced plasma shutter to control the 532 nm pulse width is conducted. The impacts of the total pulse output energy on pulse compression are investigated, and a useful conclusion can be drawn that there exists an optimal value of pulse energy at which the shortest output pulse of 3.23 ns can be obtained without a device for delay-time. Once the device for delay-time is employed to change the optical differences between two laser paths, the pulse width can be further shortened to 1.51 ns. In short, the 1.5-12 ns width-tunable 532 nm laser pulses have been obtained by adopting the laser-induced plasma shutter technique.     

毛细管放电软X光激光预-主脉冲延时电路

 以预-主脉冲方式工作的激励软X光激光毛细管放电装置，其预-主脉冲先后触发时间间隔的控制，直接影响了泵浦能量转换为X射线激光能量的效率。运用光电耦合及脉冲变压器隔离等技术，将集成芯片构成的延时电路用于快速高压放电装置中。实验结果表明，预-主脉冲协调工作，延时触发2～50μs，为产生软X光激光提供了条件。     

组合脉冲内间隔对限幅器热损伤效应的影响

基于物理模型法研究PIN限幅器二极管的微波脉冲热效应,研究了间隔1~20 ns的两个微波脉冲构成的组合脉冲与单个长脉冲对于器件峰值温度的影响。仿真结果表明:带有间隔的组合脉冲相对于长脉冲温升更明显,不同型号二极管的最佳时间间隔不同,与I层厚度成正相关的作用。分析了脉冲间隔的热效应机理,是载流子恢复引起下一个脉冲的尖峰泄漏加速升温,以及P区温度升高使得本征载流子浓度增加引起电热正反馈共同作用的结果。     

用反射式达曼光栅产生飞秒激光双脉冲

采用反射式达曼光栅建立了一种产生飞秒激光双脉冲的新装置.由于采用反射式结构，避免了材料色散和吸收导致的脉冲畸变，并构建了一台二次谐波-频率分辨光学开关装置对产生的双脉冲进行了测量.实验结果表明可以实现脉冲强度相等、时间宽度相同、不同间隔的双脉冲输出.产生双脉冲的装置在飞秒激光领域有着应用的价值. 关键词： 飞秒激光双脉冲 达曼光栅 二次谐波-频率分辨光学开关