北京慢正电子强束流运行性能测试

慢正电子强束流采用高能脉冲电子束流轰击金属钽靶, 以产生正负电子对的方式提供正电子, 作为慢正电子束流方法学研究和薄膜材料缺陷研究的束流基础. 本文是在该装置实现运行后, 对慢正电子束流的强度、能散、形貌等运行性能的测试工作的介绍, 以及慢正电子湮没多普勒测量系统的调试和标准样品的测量结果.     

脉冲慢正电子束流的直流化装置

在基于加速器的北京慢正电子强束流装置上, 用Penning-Trap技术实现了脉冲慢正电子束流的存储和直流化. 实验表明, 系统的真空度对正电子的存储效率有严重影响, 脉冲正电子的释放方式决定了直流化后束流的能量分散; 改变释放级信号波形以及释放方式可以得到能量分散小于1eV的准直流化慢正电子束流.     

正电子慢化体的研究和进展

正电子湮没技术是一种研究材料的微观缺陷和相变的灵敏工具,在通常的正电子谱仪中,正电子能量为MeV量级,在样品中注入深度比较学（－100μm）,主要研究材料体内的平均缺陷密度,慢正电子束方法把正电子的能量降低为keV量级（而且可以调节）,注入比较浅（－μm）,所以是研究表面缺陷的探测手段,正电子慢化体是产生慢正电子的关键设备,对其研究有重要意义,文章综述了慢化体研究的历史和现状,从物理概念出发介绍使正电子慢化的四种可能方法和当今慢化体的五种几何排列方法,其中应用最广泛的是钨慢化体和百叶窗式的排列方式,效率最高的是惰性气体固体慢化体,而加电场慢化体是有待开发的高效慢化体。     

Surface polarization effect on positron backdiffusion from dielectrics

The reduction of the thermal positron backdiffusion probability from a dielectric, due to the electrostatic polarization of the surface, has been calculated in the framework of an isothermal diffusion model. Our results show that this reduction can pass from levels of only a few percent (e.g., Si and Ge at room temperature) to almost complete suppression for substances with short positron diffusion length and at low temperatures. It is also shown that the surface polarization effect can be ignored in measurements of the positron diffusion constant with beam techniques if the low-energy part of the backdiffusion probability vs. beam energy curve is not included in the analysis.Work jointly supported by the Ministero della Pubblica Istruzione and by the Consiglio Nazionale delle Ricerche, Gruppo Nazionale di Struttura della Materia     

利用正电子湮没技术研究钾掺杂钨合金中的缺陷

钨合金中钾的掺杂会引入大量的缺陷,如尺寸几十纳米的钾泡、高密度的位错以及微米量级的晶粒带来的晶界等,这些缺陷的浓度和分布直接影响合金的服役性能.本文运用正电子湮没谱学方法研究钾掺杂钨合金中的缺陷信息,首先模拟计算了合金中各种缺陷的正电子湮没寿命,发现钾的嵌入对空位团、位错、晶界等缺陷的寿命影响很小;然后测量了不同钾含量掺杂钨合金样品的正电子湮没寿命谱,建立三态捕获模型,发现样品中有高的位错密度和低的空位团簇浓度,验证了钾对位错的钉扎作用,阐述了在钾泡形成初期是钾元素与空位团簇结合并逐渐长大的过程;最后使用慢正电子多普勒展宽谱技术表征了样品中缺陷随深度的均匀分布和大量存在,通过扩散长度的比较肯定了钾泡、晶界等缺陷的存在.     

Positron Energy Levels in Cd-Based Semiconductors

Using the full potential linearized augmented plane wave FP-LAPW method within local density ap-proximation LDA, we have studied positron diffusion and surface emission in Cd-based semiconductors. This requires the calculation of electron and positron band structures. In the absence of experimental and theoretical data for CdX (X=S,Se,Te) we have treated the Si, which has been studied by several authors, as a test case. Predictive results on positron effective masses, deformation potentials, positron work functions, diffusion constants and positron mobilities are presented for CdX (X=S, Se, Te). Our calculated data for Si are compared with experimental and recent theoretical results.     

Depth resolved Doppler broadening measurement of layered Al-Sn samples

The accumulation of positrons in a two-dimensional layer of tin embedded in aluminum is examined by Doppler broadening spectroscopy (DBS). For this purpose samples are grown out of high purity materials consisting of a step-shaped layer (0.1-200 nm) of tin on a substrate of aluminum and covered by an aluminum layer of constant thickness (200 nm).The positron implantation profile is varied by different positron acceleration energies of up to 15 keV. The pre-thermal implantation profile of the monoenergetic positron beam is examined since the effect of thermal positron diffusion is less significant at tin layers thicker than 50 nm. At thin layers (<50 nm), the positrons greatly accumulate either at the aluminum-tin interface or in the tin layer due to its higher positron affinity compared to aluminum. Thus a very high sensitivity of the measurement for low densities of tin is observed. Consequently from the experimental results, a sensitivity threshold for the detection of a low amount of tin in an aluminum matrix with DBS is determined. The DB results are compared to theory by an approximation for pre-thermal implantation in layered materials.     

Early stage ageing effects and shallow positron traps in Al–Mg–Si alloys

Room temperature ageing, so-called natural ageing, of Al–Mg–Si alloys has a subtle but striking influence on the mechanical properties achievable by subsequent ageing at more elevated temperatures. Though strongly debated, different clustering processes are generally accepted to give rise to this effect. Using temperature-dependent positron lifetime measurements of naturally aged Al–Mg–Si alloys, it is shown that in the early stages of ageing, small clusters of alloying atoms without embedded vacancies take part in the decomposition process. These clusters serve as shallow positron traps with a binding energy of about 55(10) meV, grow in the course of natural ageing and transform to deep positron traps with binding energies well above thermal energies. Thus, results of positron annihilation spectroscopy techniques need to be interpreted carefully with respect to the microstructure of age-hardenable Al alloys. Moreover, it is shown that a simple approach to bind positron states using a three-dimensional potential well and (bulk) positron affinities cannot explain the present findings.     

Planned positron experiments at FRM-II

The new research reactor FRM-II near Munich has a strong positron source, which delivers an intense, nearly monoenergetic positron beam. Our positron systems, the pulsed low energy positron source (PLEPS) and the scanning positron microscope (SPM) will be operated at this beam. Some aspects of matching these systems to the new positron source will be discussed.Considerable improvements are expected, e.g. more than 10⁵ s⁻¹ recorded events at PLEPS and sub-micrometre resolution at SPM. They will enable investigations in so far inaccessible problems like the evaluation of annihilation characteristics and trapping constants of individual defects or studies of fast dynamical processes. In applied materials science complex defect structures will be studied which demand a resolution into many differing lifetimes, e.g. fractured specimens, wear, corrosion, etc. Also large series of measurements at small systematic modifications are planned. There is also the opportunity to analyse in addition the chemical microstructure of the specimens by means of a hydrogen microprobe and other ion beam techniques available close to FRM-II at the Technical University of Munich.     

超短超强激光产生正电子的蒙特卡罗模拟

通过理论分析,建立了超短超强激光与固体靶作用产生正电子的蒙特卡罗模拟模型及Geant4模拟程序。模拟研究了靶材料、靶厚度及超热电子温度等对正电子产额的影响,结果表明:对铝、铜、锡、钽、金、铅6种靶材料,金靶的正电子产额最高,是优秀的正电子产生靶;不同超热电子温度下存在不同的最佳靶厚度,在最佳靶厚度以下,正电子产额随靶厚度增长而增大,靶厚度取3 mm较为合适;超热电子温度越高,正电子产额也越高,提高激光强度是增加正电子产额的有效途径。模拟研究给出了正电子角分布及其能谱,结果显示,正电子发射明显前倾,从大于90方向范围发射的正电子数量极少,且超热电子温度越高前倾特点越明显,能量呈类麦克斯韦分布,靶背法线方向出射的正电子的温度随超热电子温度升高而升高。     

氟化锂团簇基纳米相薄膜的慢正电子研究

用慢正电子束流装置研究了氟化锂团簇沉积在单晶硅衬底上构成的纳米相薄膜,获得了正电子湮没S参数和有效扩散长度L_eff. 讨论了制备条件(如衬底温度、蒸发速率、惰性气体分压等)对薄膜微观结构的影响.     

研究堆慢正电子源构建中的关键机理问题

研究堆慢正电子源是获得高强度慢正电子束流的有效方式,国际上己建成多座装置并获得广泛应用.与常规同位素慢正电子源相比,研究堆慢正电子源的物理过程复杂,影响末端束流强度的因素众多,对其进行深入研究与合理建模是未来在中国绵阳研究堆(CMRR)上构建慢正电子源的基础.本文厘清了研究堆慢正电子产生的关键过程与物理机理,建立了预测末端正电子束流强度的理论模型,找到了影响其末端强度的主要物理量:快正电子体产生率、慢化体有效表面积、慢化体扩散距离、慢正电子从表面被提取到靶环末端的效率、及束流系统提取效率.用多种实验结果对模型进行校验,包括多个同位素慢正电子源的效率测量值,以及PULSTAR研究堆慢正电子源测量结果,充分验证了模型正确性.根据模型对各物理量的影响因素进行了分析,找到了需着重关注的影响因素,对未来源/靶结构的设计给出建议.     

The application of artificial neural networks to the inversion of the positron lifetime spectrum

A new method of processing positron annihilation lifetime spectra is proposed.It is based on an artificial neural network(ANN)-back propagation network(BPN).By using data from simulated positron lifetime spectra which are generated by a simulation program and tested by other analysis programs,the BPN can be trained to extract lifetime and intensity from a positron annihilation lifetime spectrum as an input.In principle,the method has the potential to unfold an unknown number of lifetimes and their intensities from a measured spectrum.So far,only a proof-of-principle type preliminary investigation was made by unfolding three or four discrete lifetimes.The present study aims to design the network.Besides,the performance of this method requires both the accurate design of the BPN structure and a long training time.In addition,the performance of the method in practical applications is dependent on the quality of the simulation model.However,the chances of satisfying the above criteria appear to be high.When appropriately developed,a trained network could be a very efficient alternative to the existing methods,with a very short identification time.We have used the artificial neural network codes to analyze data such as the positron lifetime spectra for single crystal materials and monocrystalline silicon.Some meaningful results are obtained.     

正电子能量转换研究进展

简要介绍了正电子能量转换的原理、优点、重要应用前景及主要研究领域. The concept of positron energy conversion, the advantages of positrons, the possible applications and main research area of positron energy conversion were reviewed in this paper.     

Development and application of the intense slow positron beam at IHEP

This paper describes the development and application of an intense slow positron beam at IHEP with regard to its two main components.The Variable-Energy Positron Lifetime Spectroscopy (VEPLS) based on the pulsing system consisting of a chopper,a prebuncher and a buncher has been constructed in order to meet the needs of materials science development.At present,the time resolution of the VEPLS can easily reach about 386 ps with a peak-to-background ratio of about 600:1.A plugged-in 22Na positron source section for adjusting the newly built experimental station and for increasing the beam operation efficiency has been constructed.A slow positron beam with an intensity of 2.5x105 e+/s and the beam profile whose diameter is 10 mm has been obtained;the moderation efficiency of the tungsten mesh moderator reaches 5.1x 10-4 as calculated with an original positron source activity of 52 mCi.     

Photon and positron generation by ultrahigh intensity laser interaction with electron beams

This study investigates the generation of high energy photons and positrons using focused ultrahigh intensity femtosecond laser pulses on a relativistic electron beam with a set of two-dimensional particle-in-cell simulations. We consider circularly and linearly polarized, single and spatially separated double laser pulses. We model both 500 MeV and 1 GeV electron beams. Higher positron production is obtained using circularly polarized laser pulses. Using double pulses, the focusing effect of the ponderomotive force confines the electrons to a small volume, generating additional energetic photons and positrons. The positron spectral distributions are effectively modified by these variations. When the electron beam energy is doubled, the number of positrons increased, while the cutoff energy remained nearly constant.     

Tunable monoenergy positron annihilation spectroscopy of polyethylene glycol thin films

Doppler broadening and coincidence Doppler broadening of annihilation radiation experiments have been performed in three kinds of polyethylene glycol(PEG) membrane formed with different average molecular weight using the tunable monoenergy slow positron probe as a function of implantion energy. The obtained positron annihilation parameters are interpreted from two aspects: surface effect and differences in micro-structure or chemical environment of positron annihilation. The experimental results show that the regulation of densification of PEG molecular packing and distribution uniformity from the near surface layer to the bulk region in the film forming process can be well realized by changing its molecular weight. Combining a variable monoenergetic slow positron beam and these two positron annihilation spectroscopy methods is a powerful tool to study positron annihilation characteristics and for polymeric thin-film fine structure analysis.     

POSITRON ANNIHILATION STUDY ON SURFACE STRUCTURE OF BIOLOGICAL SAMPLES IMPLANTED BY IONS WITH LOW ENERGY

The organic materials of biological samples, such as lima bean and peanut, were implanted respectively by nitrogen ions with an energy of 100 keV and vanadium ions with an energy of 200 keV. The positron annihilation lifetime spectra of implanted and non-implanted samples were compared with each other especially in τ₃ and I₃. The experimental results showed that before implantation there were many small holes with diameters of 0.48 and 0.7 nm respectively in lima bean and peanut. After ion implantation, the size of holes would be changed because of organism cross linking and scission. The effective penetration range of implantation of ions with low energy into biological samples is about 200μm.     

正弦平方势与沟道辐射的谱线展宽

利用曾经提出的正弦平方势解析地处理了非线性效应和偶极效应对沟道谱线宽度的影响, 解释了正电子能量在5 GeV附近的Si (110)面沟道辐射谱特征. The spectral properties of the planar channeling radiation of positron have been investigated by using Sine squared Potential. At positron energy of 5 GeV a sharp line has been explained for the planar channeling radiation in Si(110 ). It is that theoretic results are compatible to the experiments.     

Pseudo-potential caculations of positron annihilation rates in bubbles of helium contained in the metals Mg,Ag and Au

Abstract

A pseudo-potential technique has been applied to calculate the annihilation rates for positrons in bubbles of helium gas in gold and silver. The positron pseudo-wavefunction in each case was found to be in a surface state of the metal, the exact form of which displayed a slight dependance on the density of the helium gas. The annihilation rate of the positron was the sum of a nearly constant surface rate and a strongly density dependant annihilation rate with the helium electrons. There is a trend for annihilation with the helium to be greater in metals with low free electron densities, the helium in such metals resting closer to the metal surface thus increasing the overlap of the positron wavefunction with the helium.