The adsorption of CO2 and CO on Ca and CaO films studied with MIES, UPS and XPS

Metastable Induced Electron Spectroscopy (MIES), Ultraviolet Photoelectron Spectroscopy (UPS), and X-ray Photoelectron Spectroscopy (XPS) are employed to study the adsorption of CO₂ and CO on Ca and CaO films. Ca films are prepared by evaporation of Ca onto clean Si(1 0 0) substrates. CaO films are produced by Ca evaporation in an oxygen atmosphere at a substrate temperature of 670 K. CO₂ interaction with the Ca films is initiated by dissociation of the impinging molecules leading to the formation of Ca-O bonds. These Ca-O bonds are subsequently consumed in the formation of a closed CaCO₃ layer on top of the surface. CO interaction with the Ca surfaces also leads to the dissociation of the molecule and the formation of Ca-O bonds. We find evidence for the subsequent formation of complexes on top of the surface. On CaO surfaces, both CO₂ and CO lead to the formation of a closed CaCO₃ top layer, though displaying very different reaction rates.     

Covalent binding of cyclohexene, 1,3-cyclohexadiene and 1,4-cyclohexadiene on Si(1 1 1)-7 × 7

The adsorption reactions and binding configurations of cyclohexene, 1,3-cyclohexadiene and 1,4-cyclohexadiene on Si(1 1 1)-7 × 7 were studied using high-resolution electron energy loss spectroscopy (HREELS), ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and DFT calculation. The covalent attachments of these unsaturated hydrocarbons to Si(1 1 1)-7 × 7 through the formation of Si–C linkages are clearly demonstrated by the observation of the Si–C stretching mode at 450–500 cm⁻¹ in their HREELS spectra. For chemisorbed cyclohexene, the involvement of π_C=C in binding is further supported by the absence of C=C stretching modes and the disappearance of the π_C=C photoemission. The chemisorption of both 1,3-cyclohexadiene and 1,4-cyclohexadiene leads to the formation of cyclohexene-like intermediates through di-σ bonding. The existence of one π_C=C bond in their chemisorbed states is confirmed by the observation of the C=C and (sp²)C---H stretching modes and the UPS and XPS results. DFT calculations show that [4 + 2]-like cycloaddition is thermodynamically preferred for 1,3-cyclohexadiene on Si(1 1 1)-7 × 7, but a [2 + 2]-like reaction mechanism is proposed for the covalent attachment of cyclohexene and 1,4-cyclohexadiene.     

Resistless patterning of a chlorine monolayer on a Si(0 0 1) surface with an electron beam

We achieved electron beam (e-beam) patterning without a photoresist on a Cl-terminated Si(0 0 1) surface. Synchrotron radiation photoemission spectroscopy and scanning photoelectron microscopy were employed to investigate the surface chemical state and pattern formation. The Cl-Si bonds were easily broken by the irradiation with an e-beam of 1 keV, leading to a pattern formation through the adsorption of residual molecules of water and hydrocarbon at the exposed Si dangling bond sites. In addition, we demonstrated the selective adsorption of desired molecules on the surface by e-beam irradiation in environments consisting of different gases, such as oxygen, ammonia, and 1-butanethiol.     

Generation of oxygen vacancies in the surface of ferroelectric Pb(Nb,Zr,Ti)O3

Controlled generation of oxygen vacancies in the surface of ferroelectric thin films is crucial to study how surface reduction affects molecular adsorption and catalysis of gas-surface phenomena. We demonstrate the effective reduction in the surface of 4% niobium doped 20/80 PZT (PNZT) thin films. The sample was characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), and heated at 200, 250 and 300 °C in a high vacuum system at 10⁻⁵ T of H₂. Auger peak-to-peak intensities was used to study the elemental concentrations during the reduction experiment. High-resolution XPS spectra were acquired before and after reduction process for detecting the changes of the oxygen signal. Vacancies production rates as slow as 0.21% per minute were achieved and the temperature was not a key parameter in the process. Experiments at higher hydrogen pressures and lower temperatures might improve the control of the vacancies production.     

Annealing effects on the plasmonic excitations of metal/metal interfaces

The effects of the annealing procedure at 400-450 K on the electronic properties of nanoscale thin films of Ca, Au and Ag grown on Cu(1 1 1) at room temperature were probed by high-resolution electron energy loss spectroscopy measurements. Ca surface plasmon underwent to a significant red-shift upon annealing, due to the oxidation of the topmost Ca layer. Water strongly interacted with the CaO interface at room temperature. Au surface plasmon disappeared upon annealing the gold film, as a consequence of the formation of an Au-Cu alloy. Ag surface plasmon red-shifted both in the annealed adlayer and with increasing temperature compared with the frequency recorded for the as-deposited silver film.     

Structures of sulfur on TiO2(1 1 0) determined by scanning tunneling microscopy, X-ray photoelectron spectroscopy and low-energy electron diffraction

The temperature dependent adsorption of sulfur on TiO₂(1 1 0) has been studied with X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), and low-energy electron diffraction (LEED). Sulfur adsorbs dissociatively at room temperature and binds to fivefold coordinated Ti atoms. Upon heating to 120°C, 80% of the sulfur desorbs and the S 2p peak position changes from 164.3±0.1 to 162.5±0.1 eV. This peak shift corresponds to a change of the adsorption site to the position of the bridging oxygen atoms of TiO₂(1 1 0). Further heating causes little change in S coverage and XPS binding energies, up to a temperature of 430°C where most of the S desorbs and the S 2p peak shifts back to higher binding energy. Sulfur adsorption at 150°C, 200°C, and 300°C leads to a rich variety of structures and adsorption sites as observed with LEED and STM. At low coverages, sulfur occupies the position of the bridging oxygen atoms. At 200°C these S atoms arrange in a (3×1) superstructure. For adsorption between 300°C and 400°C a (3×3) and (4×1) LEED pattern is observed for intermediate and saturation coverage, respectively. Adsorption at elevated temperature reduces the substrate as indicated by a strong Ti³⁺ shoulder in the XPS Ti 2p_3/2 peak, with up to 15.6% of the total peak area for the (4×1) structure. STM of different coverages adsorbed at 400°C indicates structural features consisting of two single S atoms placed next to each other along the [0 0 1] direction at the position of the in-plane oxygen atoms. The (3×3) and the (4×1) structure are formed by different arrangements of these S pairs.     

XPS and RBS investigations of Si–Er–O interactions on a Si(1 0 0)-2x1 surface

The interactions among erbium, oxygen and silicon atoms on a Si(1 0 0)-2x1 reconstructed surface have been studied by means of X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Erbium and oxygen were deposited at 600 °C on the Si surface and their behavior has been observed after different thermal processes. It was found that at 600 °C, the formation of a stable surface complex Er–O–Si is obtained together with Si oxidation; after an 800 °C annealing, the amount of oxygen bound to Si decreases and the remaining O atoms are mainly bonded to Er. An abrupt change was observed after 900 and 1000 °C annealings, which bury the Er atoms about 60 Å below the substrate surface. Our results give some hints to hypotise the O diffusion towards the Si bulk.     

Structural and compositional stability of Co oxide grown on (001) bct Co

Room temperature (RT) adsorption of oxygen on the (001) surface of metastable, cubic Co film epitaxially grown on a Fe substrate results in the formation of about 7 monolayers (ML) crystalline CoO film, in the typical rocksalt structure 45° rotated with respect to the square unit mesh of the underlying Co film. We investigated the stability of this oxide layer upon annealing in the RT–620 K temperature range, by means of primary-beam diffraction modulated electron emission (PDMEE), and X-ray photoelectron spectroscopy (XPS). For temperatures up to 570 K, film thickness and local order are preserved, in spite of an increasing number of Co and O atoms bonded in sites of reduced coordination. For larger temperatures, thickness also reduces, but the oxide film is still characterized by a high degree of CoO-like local order.     

Formation, stability and CO adsorption properties of PdAg/Pd(1 1 1) surface alloys

The formation, stability and CO adsorption properties of PdAg/Pd(1 1 1) surface alloys were investigated by X-ray photoelectron spectroscopy (XPS) and by adsorption of CO probe molecules, which was characterized by temperature-programmed desorption (TPD) and high resolution electron energy loss spectroscopy (HREELS). The PdAg/Pd(1 1 1) surface alloys were prepared by annealing (partly) Ag film covered Pd(1 1 1) surfaces, where the Ag films were deposited at room temperature. Surface alloy formation leads to a modification of the electronic properties, evidenced by core-level shifts (CLSs) of both the Pd(3d) and Ag(3d) signal, with the extent of the CLSs depending on both initial Ag coverage and annealing temperature. The role of Ag pre-coverage and annealing temperature on surface alloy formation is elucidated. For a monolayer Ag covered Pd(1 1 1) surface, surface alloy formation starts at ∼450 K, and the resulting surface alloy is stable upon annealing at temperatures between 600 and 800 K. CO TPD and HREELS measurements demonstrate that at 120 K CO is exclusively adsorbed on Pd surface atoms/Pd sites of the bimetallic surfaces, and that the CO adsorption behavior is dominated by geometric ensemble effects, with adsorption on threefold hollow Pd₃ sites being more stable than on Pd₂ bridge sites and finally Pd₁ a-top sites.     

Solid-phase epitaxy of CaSi2 on Si(1 1 1) and the Schottky-barrier height of CaSi2/Si(1 1 1)

Thin Ca films were evaporated on Si(1 1 1) under UHV conditions and subsequently annealed in the temperature range 200–650 °C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core-level shift by X-ray photoemission spectroscopy (XPS) was employed to study the silicide formation process. The formation temperature of CaSi₂ films on Si(1 1 1) was found to be about 350 °C. Epitaxial growth takes place at T≥400 °C. The morphology of the films, measured by atomic force microscopy (AFM), was correlated with their crystallinity as analyzed by X-ray diffraction (XRD). According to measurements of temperature-dependent I–V characteristics and internal photoemission the Schottky-barrier height of CaSi₂ on Si(1 1 1) amounts to qΦ_Bn=0.25 eV on n-type and to qΦ_Bp=0.82 eV on p-type silicon.     

Adsorption of silane and methylsilane on gold surfaces

The adsorption of silane and methylsilane on the (1 1 0) and polycrystalline surfaces of gold is examined using vibrational electron energy loss spectroscopy (VEELS), angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and X-ray photoelectron spectroscopy (XPS). Adsorption of silane onto the Au(1 1 0) surface at low temperatures is dissociative and yields an SiH₂ and possibly also SiH₃ surface species. Further dissociation occurs at room temperature to yield adsorbed SiH, which is tilted on the surface, with complete dissociation to Si occurring by 110 °C. The similarity in the UP spectra for silane adsorbed on the polycrystalline sample suggests that the same surface species are present over that temperature range. Above 200 °C, spectral changes suggest rearrangement of the Si atoms, which, by 350 °C, have diffused into the bulk. Adsorption of methylsilane onto the (1 1 0) surface at low temperatures initially produces adsorbed CH₃SiH or CH₃SiH₂, with undissociated methylsilane physisorbing at higher exposures. By room temperature, desorption and decomposition leaves (or direct adsorption yields) only adsorbed CH₃Si. After further heating, the hydrogen-carbon bonds of the CH₃ group break to leave an adsorbed SiC species. On the polycrystalline surface, methylsilane adsorption is the same at low temperatures as on (1 1 0). In contrast to the latter, though, the UP spectra indicate that direct exposures at room temperature yield adsorbed Si or SiC initially, with CH₃Si again adsorbing at higher exposures. Upon further heating to 330 °C, little if any methyl-groups remain on the surface and the Si has started to diffuse into the bulk.     

Adsorption and reactions of CH2I2 on Ru(001) surface

The adsorption and dissociation of CH₂I₂ were studied at 110 K with the aim of generating CH₂ species on the Ru(001) surface. The methods used included X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), temperature programmed desorption (TPD), Auger electron spectroscopy (AES) and work function measurements. Adsorption of CH₂I₂ is characterized by a work function decrease (0.96 eV at monolayer), indicating that adsorbed CH₂I₂ has a positive outward dipole moment. Three adsorption states were distinguished: a multilayer (T_p=200 K), a weakly bonded state (T_p=220 K) and an irreversibly adsorbed state. A new feature is the formation of CH₃I, which desorbs with T_p=160 K. The adsorption of CH₂I₂ at 110 K is dissociative at submonolayer, but molecular at higher coverages. Dissociation of the monolayer to CH₂ and I proceeded at 198–230 K, as indicated by a shift in the I(3d_5/2) binding energy from 620.6 eV to 619.9 eV. A fraction of adsorbed CH₂ is self-hydrogenated into CH₄ (T_p=220 K), and another one is coupled to di-σ-bonded ethylene, which — instead of desorption — is converted to ethylidyne at 220–300 K. Illumination of the adsorbed CH₂I₂ initiated the dissociation of CH₂I₂ monolayer even at 110 K, and affected the reaction pathways of CH₂.     

Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering

In this paper, c-axis oriented AlN films were prepared on sapphire substrate by RF reactive magnetron sputtering at various deposition temperatures (30–700 °C). The influences of deposition temperature on the chemical composition, crystalline structure and surface morphology of the AlN films were systematically investigated. The as-deposited films were characterized by X-ray photoelectron spectroscopy (XPS), two-dimensional X-ray diffraction (2D-XRD) and atomic force microscopy (AFM). The experimental results show that it can be successfully grown for high-purity and near-stoichiometric (Al/N = 1.12:1) AlN films except for the segregation of a few oxygen impurities exist in the form of Al–O bonding. The chemical composition of as-deposited films is almost independent of substrate temperature in the range of 30–700 °C. However, the crystalline structure and surface morphology of the deposited AlN films are strongly influenced by the deposition temperature. The optimum deposition temperature is 300 °C, giving a good compromise between crystalline structure and surface morphology to grow AlN films.     

Growth of β-MnO2 films on TiO2(110) by oxygen plasma assisted molecular beam epitaxy

We have used oxygen plasma assisted MBE to grow epitaxial films of pyrolusite (β-MnO₂) on TiO₂(110) for thicknesses of one to six bilayers (BL). We define a bilayer to be a layer of Mn and lattice O and an adjacent layer of bridging O within the rutile structure. The resulting surfaces have been characterized in situ by reflection high-energy electron diffraction, low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and atomic force microscopy. Well-ordered, pseudomorphic overlayers form for substrate temperatures between 400 and 500°C. Mn–Ti intermixing occurs over the time scale of film growth (1 BL/min) for substrate temperatures in excess of 500°C. Films grown at 400–500°C exhibit island growth, whereas intermixed films grown at temperatures of 500–600°C are more laminar. 1 BL films grown at 450°C are more laminar than multilayer films grown at the same temperature, and form a well-ordered surface cation layer of Mn on the rutile structure with at most 10% indiffusion to the second cation layer.     

Structural comparison of gadolinium and lanthanum silicate films on Si(1 0 0) by HRTEM, EELS and SAED

High-resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS) and selected area electron diffraction (SAED) were used to study gadolinium and lanthanum silicate films deposited on Si(1 0 0) substrates using electron-beam evaporation from pressed-powder targets. As-deposited films consist of an amorphous silicate layer without an interfacial layer. After annealing at 900 °C in oxygen for 2 min, an interfacial SiO₂ layer is formed in the gadolinium silicate film, while this interfacial layer is a SiO₂-rich lanthanum silicate layer in the lanthanum silicate film. The formation of interfacial silicate layers is thermodynamically more favorable for the lanthanum films than for the gadolinium films. The gadolinium silicate films crystallize at a temperature between 1000 and 1050 °C, while the crystallization temperature for the lanthanum silicate films is between 900 and 950 °C.     

High resolution XPS studies on hexadecafluoro-copper-phthalocyanine deposited onto Si(1 1 1)7×7 surface

High resolution X-ray photoelectron spectroscopy measurements have been performed onto ultrathin films of hexadecafluoro copper phthalocyanine deposited, at room temperature and in ultrahigh vacuum conditions, onto clean Si(1 1 1)7×7 substrate (silicon, Si). The measurements, performed at various film thicknesses, show a strong interaction between the molecule and the Si substrate. All the core level peaks present strong modifications induced by the substrate interaction. In particular the fluorine (F) spectrum clearly presents the effect of the interaction of some F atoms of the molecule with the substrate, which determines the formation of F–Si bonds while the copper spectrum indicates a charge transfer from the Si substrate. The changes observed in the other core level spectra have been attributed to a different charge distribution in the molecule, after the formation of F–Si bonds. We suggest a planar growth of these molecules on the Si substrate starting from the first layer.     

Formation of interface and surface oxides on supported Pd nanoparticles

We have quantitatively studied the interaction between oxygen and an Fe₃O₄-supported Pd model catalyst by molecular beam (MB) methods, time resolved IR reflection absorption spectroscopy (TR-IRAS) and photoelectron spectroscopy (PES) using synchrotron radiation. The well-shaped Pd particles were prepared in situ by metal evaporation and growth under ultrahigh vacuum (UHV) conditions on a well-ordered Fe₃O₄ film on Pt(1 1 1).It is found that for oxidation temperatures up to 450 K oxygen predominantly chemisorbs on metallic Pd whereas at 500 K and above (∼10⁻⁶ mbar effective oxygen pressure) large amounts of Pd oxide are formed. These Pd oxide species preferentially form a thin layer at the particle/support interface, stabilized by the iron-oxide support. Their formation and reduction is fully reversible. Upon decomposition, oxygen is released which migrates back onto the metallic part of the Pd surface. In consequence, the Pd interface oxide layer acts as an oxygen reservoir, the capacity of which by far exceeds the amount of chemisorbed oxygen on the metallic surface.Additionally, Pd surface oxides can also be formed at temperatures above 500 K. The extent of surface oxide formation critically depends on the oxidation temperature. This effect is addressed to different onset temperatures for oxidation of the particle facets and sites. It is shown that the presence of Pd surface oxides sensitively modifies the adsorption and reaction properties of the model catalyst, i.e. by lowering the CO adsorption energy and CO oxidation probability. Still, a complete reduction of the Pd surface oxides can be obtained by extended CO exposure, fully reestablishing the metallic Pd surface.     

Formation of Ti and TiN ultra-thin films on Si by ion beam sputter deposition

Ultra-thin titanium and titanium nitride films on silicon substrate were obtained by ion beam sputtering of titanium target in vacuum and nitrogen atmosphere, using argon ions with energy of 5 keV and 15 μA target current. Elemental composition and chemical state of obtained films were investigated by X-ray photoelectron spectroscopy with using Mg-Kα X-ray radiation (photon energy 1253.6 eV). It was shown that it is possible to form both ultra-thin titanium films (sputtering in vacuum) and ultra-thin titanium nitride films (sputtering in nitrogen atmosphere) in the same temperature conditions. Photoelectron spectra of samples surface, obtained in different steps of films synthesis, detailed spectra of photoelectron emission from Si 2p, Ti 2p, N 1s core levels and also X-ray photoelectron spectra of Auger electrons emission are presented.     

Surface composition and electronic properties of indium tin oxide and oxynitride films

The surface properties of indium tin oxynitride films prepared by rf-sputtering in nitrogen atmosphere were investigated by X-ray and ultraviolet photoelectron spectroscopy as well as electron energy loss spectroscopy and Auger electron spectroscopy depth profiling. The results are compared to reference measurements on conventional rf-sputtered indium tin oxide films. The incorporated nitrogen is present in different chemical environments. Employing these different spectroscopic techniques, it was found that desorption of nitrogen from the ITON structure upon annealing is the origin of the observed drastical changes in the surface composition and electronic structure. The formation of oxygen vacancies and Sn surface segregation upon annealing is linked to improvements in the physical properties (larger spectral range of transmittance and higher conductivity) of the films.     

Interaction of ethylene with palladium clusters supported on oxidised tungsten foil

The reactivity with ethylene of palladium clusters supported on oxidised tungsten foil has been investigated by synchrotron radiation-induced photoelectron spectroscopy and temperature programmed desorption. The effect of the heat pre-treatment of the sample on the interaction strength with ethylene is demonstrated. Already at room temperature, adsorption of ethylene causes breaking of both the C-H and C-C bonds and the appearance of a highly reactive C₁ phase with unsaturated bonds. A part of this phase is oxidised to carbon monoxide by oxygen supplied by the support immediately after ethylene adsorption. Another part of ethylene is probably adsorbed in the form of ethylidyne. Heating at temperatures between 400 K and 500 K brings about the dissolution of the C₁ phase in the shallow subsurface region of the Pd clusters. Further oxidation of the C₁ phase by oxygen from the support proceeds at ∼600 K. Substantial reduction of the concentration of C₁ phase at room temperature is observed after heat pre-treatment of the sample at 500 K, while complete suppression of the room temperature ethylene chemisorption proceeds upon heat pre-treatment at 800 K. This effect is related to thermally induced encapsulation of palladium clusters in surface tungsten oxide.