Electronic Structure and Magnetic Properties of SmCo7-xZrx

The electronic structure and magnetism of SmCo_7-xZr_x alloy are investigated using the spin-polarized MS-X. method. The results show that a few of electrons are transferred to the Sm(5d⁰) orbital due to orbital hybridization between Sm and Co atoms. The exchange interactions between 3d and 5d electrons are more important than the polarization effects of the conductive electrons, thus it is the main reason resulting in the long-range ferromagnetic order in SmCo_7-xZr_x. The Curie temperature of SmCo_7-xZr_x is generally lower than that of corresponding pure Co, which may be explained by the weaker average coupling strength between Co lattices due to some negative couplings mainly occurring of 2e site. The calculated results for the Sm₅Co₃₂Zr₂ cluster may lead to a better understanding of why SmCo_7-xZr_x is stable phase. Since the spin-up DOS peak of d electrons at E_F arises and the bonding of electrons at E_F strengthens with increasing Zr concentration, which results in the internal energy of the system decrease, the stable ferromagnetic order forms in SmCo_7-xZr_x.     

Enhancement of Critical Current Density in Graphite Doped MgB2 Wires

Graphite doped MgB2-xCx (x = 0.00, 0.05, 0.10) wires were fabricated via the in situ powder-in-tube method in flowing argon by using low carbon steel tubes as the sheath materials. With the increase of graphite concentration,the amount of unreacted graphite in the core area increases, and the average grain size of MgB2 decreases. It is found that the critical current density Jc can be significantly improved by graphite doping. The MgB2 wire with x = 0.05 exhibits the best Jc value of 16710 A/cm^2 at 6K, 4.5T, but the MgB1.9C0.1 wire has the highest Jc value of 2060 A/cm^2 at 6 K, 8 T. It is suggested that the enhancement of Jc is due to not only the improvement of the microstructure features but also the introduction of pinning centres.     

Relation of Structure and Superconductivity in Self-Compensating Y1-χCaχBa2-χLaχCu3Oy

The self-compensating compound of Y1-χ CaχBa2-χLaχ Cu3Oy is synthesized through a solid-state reaction method with χ from 0.25 to 0.55. Structural and superconducting properties have been investigated by χ-ray diffraction, Rietveld refinement, and dc magnetization measurement, respectively. The impure peaks appear when χ is more than 0.5 in the diffraction pattern. Orthorhombic-tetragonal transition occurs at χ = 0.45. Some local structural parameters, such as Cu（1）-O（4）, Cu（2）-O（4） bond lengths, change randomly in a narrow range. The relationship between the character of （Ba/La）-O plane and Tc is rather interesting. We attribute the behaviour of superconductivity to the joint effects of these local structural parameters. The results give the evidence that the influence of the structural change on superconductivity is essential and independent of carrier concentration.     

Analysis of X（1576） as a Tetraquark State with the QCD Sum Rules

We take the viewpoint that X（1576） is the tetraquark state which consists of a scalar diquark and an antiscalar-diquark in relative P-wave, and calculate its mass in the framework of the QCD sum rule approach. The numerical value of the mass mx= （1.66 =k 0.14） GeV is consistent with the experimental data. There might be some tetraquark components in the vector meson X（1576）.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.     

Teleportation of Three-Particle W State

We present two schemes for teleporting a three-particle W state by using four-particle state. We consider that the quantum channel is a maximally entangled state (four-particle cluster state) or a non-maximally entangled state. In our schemes, it is necessary to introduce additional particle and construct unitary transformation for realize perfect or probabilistic teleportation of the three-particle W state. In order to transmit target state successfully, Alice firstly performs two controlled-NOT on the initial state. The success probabilities of our two schemes are 1 and 4α ², respectively. Compared with other schemes proposed before, our scheme has higher efficiency.     

Effects of Dzyaloshinski-Moriya anisoyropic antisymmetric interaction on entanglement and teleportation in a two-qubit Heisenberg chain with intrinsic decoherence

We studied the effects of Dzyaloshinski-Moriya (DM) anisoyropic antisymmetric interaction on entanglement and teleportation in a two-qubit Heisenberg chain with intrinsic decoherence taken into account. The main result is the systematic analysis of the negativity and fully entangled fraction’s evolution as a function of DM interaction D and time t. The contrast between the case of the maximally entangled initial state and unentangled ones is presented.     

Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon

Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.     

Efficient generation of maximally entangled states via four-wave mixing in a semiconductor quantum-dot nanostructure

We investigate the generation of the maximally entangled state of two weak-light pulses (the probe and generated pulses) via four-wave mixing (FWM) in a semiconductor quantum dot (SQD) with a biexciton-exciton cascade configuration. The results show that this maximally entangled state can propagate with an ultraslow group velocity under suitable parameter conditions. For application, our proposed scheme is probably achievable with the present technology by applying the standard GaAs/InGaAs self-assemble quantum dots (QDs). Furthermore, our calculations provide a guideline for the realization of the maximally entangled state in the SQD solid-state system, which can be much more practical than that in an atomic system because of its flexible design and the wide tunable parameters.     

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

A novel lateral double-gate tunnelling field effect transistor （DG-TFET） is studied and its performance is presented by a two-dimensional device simulation with code ISE. The result demonstrates that this new tunnelling transistor allows for the steeper sub-threshold swing below 60mV/dec, the super low supply voltage （operable at VDD 〈 0.3 V） and the rail-to-rail logic （significant on-state current at the drain-source voltage VDS = 50mV） for the aggressive technology assumptions of the availability of high-k/metal stack with equivalent gate oxide thickness EOT =0.24 nm and the work function difference 4.5 eV of materials.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

Calculation of Elastic Scattering Properties in an Ultra-Cold ^85Rb-^85Rb Vapour

We report the calculation of the same-species elastic scattering properties for the ultracold rubidium-rubidium (^85Rb-^85Rb) system and the results are compared with other theoretical and experimental results in detail. We present an improved potential for triplet ground states of the Rb2 molecule, and calculate the scattering lengths αt and the effective range re using WKB and Numerov methods for two rubidium-85 collisions in the triplet state. Also, we investigate the convergence of these scattering properties, i.e. the dependence on core radius and K^0 parameter using quantum defect theory and the analytic calculations of scattering length obtained by Szmytkowski. In addition, we present evaporative cooling and other results that include phase shift and cross section at zero energy limit.     

A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode

We report a resonant tunnelling diode （RTD） small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage （I-V） characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.     

Photoemission Spectroscopy and Electronic Structures of LiMn2O4

We study the electronic structures of LiMn2O4 by x-ray and ultraviolet photoelectron spectroscopy （XPS, UPS） and resonant photoelectron spectroscopy （RPES）. XPS data suggest that the average oxidation state of Mn ions is 3.55, probably due to the small amount of lithium oxides on the surface. UPS and RPES data imply that Mn ions are in a high spin state, and RPES results show strong Mn3d-O2p hybridization in the LiMn2O4 valence band.     

Variations from Zn1-xCoxO Magnetic Semiconductor to Co-ZnCoO Granular Composite

We investigate the variations from as-deposited Zn1-x： Cox O magnetic semiconductors to the post-annealed Co- ZnCoO granular composite. The as-deposited Zn1-x Cox 0 magnetic semiconductor deposited under thermal nonequilibrium conditions is composed of Zn1-x. Cox O nanograins of high Co concentration. The room-temperature ferromagnetism with high magnetization and large negative magnetoresistance are found in the as-deposited samples. By annealing, the samples become of granular composite consisting of the Co metal grains and the remanent Zn1-x CoxO matrix. Although the magnetization is enhanced after annealing, the spin-dependent negative magnetoresistance disappears at room temperature. The magnetoresistance observed in the annealed samples in the high field region has no relation with the ferromagnetism, which in turn indicates that the roomtemperature ferromagnetism and large negative magnetoresistance observed in the as-deposited are the intrinsic properties of the Zn1-x Cox O magnetic semiconductor.     

Superconducting Transition Temperature and Metal--Semiconductor Transition Temperature in YBa2Cu4O8/La0.67Ca0.33MnO3/YBa2Cu4O8 Trilayer Films

YBa₂Cu₄O₈/La_0.67Ca_0.33MnO₃/YBa₂Cu₄O₈(YBCO/LCMO/YBCO) trilayer films were prepared by magnetron facing-target sputtering. For the first time, the oscillatory behaviour of superconducting transition temperature T_c,ON with the thickness of LCMO (d_L) has been observed. The strongest nonmonotonic information in the T_c,ON--d_L curves appears clearly when d_L is larger than the critical thickness d_L^CR. The metal--semiconductor transition temperature can only be detected at d_L>d_L^CR. The dependence on the ferromagnetic spacer layer in YBCO/LCMO/YBCO systems suggests strongly the interplay of ferromagnetic and superconducting couplings.     

Numerical Analysis and Comparison of Three Metal-Oxide-Type Super-Resolution Near Field Structures

Based on the Fresnel-Kirchhoff diffraction theory, we build up a Gaussian diffraction model of metal-oxide-type super-resolution near field structure （super-liENS）, which can describe far field optical properties. The spectral contrast induced by refractive index and the structural changes in AgOg, PtOx and PdOz thin films, which are the key functional layers in super-RENS, are studied by using this model. Comparison results indicate that the spectral contrast depends intensively on the laser-induced distribution and change of the refractive index in the metal-oxide films. The readout mechanism of the metal-oxide-type super-RENS optical disc is further clarified. This Gaussian diffraction model can be used as a simple and effective method for choosing proper active materials in super-RENS.     

Characteristics of High In-Content InGaN Alloys Grown by MOCVD

InN and In0.46 Ca0.54N films are grown on sapphire with a CaN buffer by metalorganic chemical vapour deposition （MOCVD）. Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 4 75 cm^2V^-1s^-1 and that oflno.46 Gao.54N is 163 cm^2 V^-1s^-1. Room-temperat ure photoluminescence measurement of the InN film shows a peak at 0.72eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.     

Magnetic Properties of Exchange-Coupled Dual-Layer SmTbCo Thin Films

Exchange-coupled SmTbCo dual-layer media are prepared by an r.f magnetron sputtering system and their magnetic properties are investigated. The prepared SmTbCo dual layer is composed of a 340 emu/cm^3 TM-rich readout layer and a 5.80 kOe RE-rich memory layer, meeting the requirements of high saturation magnetization and large coercivity for hybrid recording. Through exchange coupling, the coercivity of the high-saturation- magnetization SmTbCo layer is greatly enhanced from 1.85 to 5.96 kOe. The calculated interface wall energy for Sm6.65Tb12.35Co81 （20nm）/Sm1.22Tb42.16Co56.62 （20hm） is about 3.85erg/cm62. The reversal magnetization of the SmTbCo exchange-coupling dual-layer films is analysed based on a micro-magnetic model.     

Information-Disturbance Tradeoff in Estimating the Unknown Three-Qubit GHZ State

In a recent paper, Sacchi （Phys. Rev. Lett. 96 （2006） 220502） studied the information-disturbance tradeoff in estimating an unknown two-qubit maximally entangled state. In this study, we explore the tradeoff in estimating 13 an unknown three-qubit GHZ state. The optimal estimation process supplies a fidelity of 13/54 and the tradeoff interpolates smoothly between non-informative measurement and optimal estimation process.