激光测距用半导体脉冲激光测头的研究

研究了激光测距用半导体脉冲激光测头。通过对基于脉冲激光测距原理的半导体脉冲激光器的参数测量分析,研究了半导体脉冲激光的发射和接收。通过优化光学镜头组合,对半导体激光分散光束进行了平行准直。通过开发脉冲激光驱动电路、光电探测接收放大电路和半导体脉冲激光测距实验装置,研制了满足中距离激光测距要求的半导体脉冲激光测头。     

“半导体激光材料及器件”专题征稿

正征稿范围:包括但不限于半导体激光器、半导体激光物理、半导体激光材料、硅基激光器、量子点激光器、窄线宽激光器、表面等离激元激光、微腔激光器与纳米腔激光器、新型半导体材料微纳激光、混合集成半导体微纳激光。时间安排:全文投稿截止日期:2021年10月30日;专题出版时间:2022年第2期。     

“半导体激光材料及器件”专题征稿

正征稿范围:包括但不限于半导体激光器、半导体激光物理、半导体激光材料、硅基激光器、量子点激光器、窄线宽激光器、表面等离激元激光、微腔激光器与纳米腔激光器、新型半导体材料微纳激光、混合集成半导体微纳激光。时间安排:全文投稿截止日期:2021年10月30日;专题出版时间:2022年第2期。     

“半导体激光材料及器件”专题征稿

正征稿范围:包括但不限于半导体激光器、半导体激光物理、半导体激光材料、硅基激光器、量子点激光器、窄线宽激光器、表面等离激元激光、微腔激光器与纳米腔激光器、新型半导体材料微纳激光、混合集成半导体微纳激光。时间安排:全文投稿截止日期:2021年10月30日;专题出版时间:2022年第2期。     

“半导体激光材料及器件”专题征稿

正征稿范围:包括但不限于半导体激光器、半导体激光物理、半导体激光材料、硅基激光器、量子点激光器、窄线宽激光器、表面等离激元激光、微腔激光器与纳米腔激光器、新型半导体材料微纳激光、混合集成半导体微纳激光。时间安排:全文投稿截止日期:2021年10月30日;专题出版时间:2022年第2期。     

“半导体激光材料及器件”专题征稿

正征稿范围:包括但不限于半导体激光器、半导体激光物理、半导体激光材料、硅基激光器、量子点激光器、窄线宽激光器、表面等离激元激光、微腔激光器与纳米腔激光器、新型半导体材料微纳激光、混合集成半导体微纳激光。时间安排:全文投稿截止日期:2021年10月30日;专题出版时间:2022年第2期。     

大功率半导体激光调制系统及内部调制特性

从半导体激光直接调制理论出发,对直接调制过程中影响半导体激光器高频调制性能的因素进行了研究;运用PSpice建立半导体激光器等效电路模型,仿真研究了电学寄生参数对半导体激光器调制特性的影响且提出了相应的提高其调制性能的方法。在研究半导体激光器调制特性的基础上,设计了一种半导体激光直接调制系统。运用OrCAD/PSpice对直接调制驱动系统进行仿真。研制的半导体激光调制系统实现了频率为1 MHz、平均功率为1.1 W的调制激光输出。     

半导体泵浦铷蒸气激光器出光实验

针对中心波长780 nm的商用连续波半导体激光器,使用斩波器将连续激光变为脉冲输出形式,用2400 line/mm的平面全息光栅搭建Littrow外腔将线宽压窄至0.2 nm以下。采用透镜组对线宽压窄后的半导体激光进行光束整形,半导体激光经线宽压窄和光束整形后,经透镜聚焦进长约8 mm的铷蒸气泡进行半导体泵浦碱金属激光实验。首次出光得到17.5 mW的基模线偏振铷激光;在最新的改进实验中,半导体泵浦铷激光输出功率已达到2.8 W。     

大功率半导体激光合束进展

经过近30年的发展,半导体激光器已由信息器件逐步发展成为能量器件,特别是大功率高光束质量半导体激光器,已从泵浦光源过渡成为直接作用光源,并部分应用在加工及国防领域。本文介绍了大功率半导体激光单元发展现状,分析讨论了各种激光合束技术及相应的合束光源,介绍了长春光机所在激光合束方面所做的部分工作,提出了我国半导体激光产业建设及发展的几点建议,并对半导体激光技术的发展新动向进行了展望。随着单元亮度的提升和合束技术的成熟,大功率半导体激光源作为间接光源和直接作用光源将在国防和工业领域大放异彩。     

基于半导体激光放大器增益饱和的波长转换的小信号分析

利用小信号模型对基于半导体激光放大器增益饱和的波长转换作了理论分析和实验研究，并获得了波长转换效率与半导体激光放大器特性参数关系的解析表达式．通过数学计算表明，波长转换器的频率响应不仅受到半导体激光放大器的载流子寿命的限制，而且受到半导体激光放大器的饱和功率、增益以及光波导损耗的影响． 关键词：     

激光二极管相干长度的压缩

激光二极管的相干长度在高频调制的驱动电流下可以减小，在实验中对一个９８０ｎｍ的激光二极管进行了测量，表明要干长度已减小了近２０倍。     

880nm半导体激光主动照明光纤耦合模块

为降低半导体激光主动照明红曝,选择波长880 nm大功率半导体激光器作为新型激光主动照明成像系统光源。根据光纤耦合过程光参数积不变原理,研制出波长880 nm大功率半导体激光器阵列单光纤耦合模块,利用光纤匀光作用使激光光束匀化整圆后用于激光主动照明。首次在波长880 nm大功率半导体激光器上采用阶梯反射镜光束整形方法,使激光光参数积与光纤匹配,激光高效耦合进入纤芯400μm、数值孔径0.22的光纤。室温条件下光纤耦合模块连续输出功率44.9 W,电光转化效率35%,波长880 nm大功率半导体激光器阵列光纤耦合模块,不仅其红曝小而且对应CMOS图像传感器光谱响应度较高,系统成像质量好。     

A high-resolution spatial heterodyning interference spectrometer

A novel spectrometer which has a resolution of 0.013 nm with high throughput is described. The system uses a Michelson interferometer in which the mirrors have been replaced with Littrow-mounted diffraction gratings. First-order diffracted beams returning from the gratings interfere at the interferometer output to produce a spatial interferogram which is heterodyned about an optical frequency determined by the setting angles of the gratings. The heterodyning process leads to increased resolution, but limits the free-spectral range of the instrument to, in our case, about 3 nm. This is sufficient for characterizing narrow-band sources such as laser diodes. We present the theory of operation of the instrument and some sample spectra obtained from a sodium vapor lamp, a HeNe discharge, and a 670 nm diode laser.     

All-diode-laser ultraviolet absorption spectroscopy for sulfur dioxide detection

Ultraviolet radiation around 302 nm was produced by sum-frequency generation in beta-barium borate employing a blue and a near-infrared diode laser. The diode-laser-based spectrometer has a mode-hop-free tuning range of 50 GHz and was used for high-resolution spectroscopic detection of sulfur dioxide. Differential measurements of several gas concentrations, at low pressure as well as at ambient atmospheric pressure, were demonstrated. The detection limit in the first implementation of the instrument was about 20 ppm m at atmospheric pressure, essentially limited by interference fringes. Methods for greatly improving this limit are suggested.     

Measurement of frequency differences between visible laser lines up to 170GHz using metal-insulator-metal point contact diodes

Frequency differences of up to 170 GHz between a cw dye laser and a krypton laser at 568 nm were measured by mixing laser and microware radiation with a metalinsulator-metal point contact diode. Beat signals are well above noise and there is still great potential for improvement when better microwave oscillators are used. From the measurements reported it follows that the diode can be used for determining still higher frequency differences of visible laser radiation.     

高亮度蓝光半导体激光光纤耦合实验研究

高功率蓝光半导体激光可广泛应用于高反射高导电材料的加工中。阐述了一种高效紧凑的高功率高亮度蓝光半导体激光光纤耦合的实现方法,将27只蓝光单管组成3×9阵列并耦合进100 μm/NA0.2的光纤中。研制出的光纤耦合模块可实现450 nm波段蓝光LD输出,功率约75 W,电光效率约28%,还可采用偏振合束进一步提升光纤耦合激光功率。     

Frequency doubled diode laser in alternative extended cavity

We report on an alternative extended cavity scheme used with a 180 mW quantum well GaAlAs diode laser, operating near 850 nm. A dispersing prism and a thin glass plate are employed to enforce stable single-mode operation in the strong feedback regime, with no need for laser AR coatings. Compared to other configurations where a grating is used, the lower loss in the extended cavity allows higher fundamental power available for second harmonic generation. For example, by frequency doubling using potassium niobate in a power enhancement cavity, enough power can be generated from a single diode laser to decelerate and trap calcium atoms with radiation at 423 nm.     

半导体激光牙科治疗仪

采用ＧａＡｌＡｓ激光二极管作为激光源，电子定时，功率实时监测，ＬＥＤ红光指示，硬光纤偶合输出，工作波长８３０ｎｍ，输出功率１３０ｍＷ，属于低功率激光，主要产生刺激调理作用，消炎止痛，抗感染，改善血液循环，增强机体免疫功能     

Infrared dye laser excited by a diode laser

A waveguide dye laser with an inner diameter of 30 μm and a length of 1.0 nm has been excited with a pulsed GaAlAs diode laser. The infrared-absorbing dye 5,5′-dichloro-11-diphenylamino-3,3′-diethyl-10,12-ethylenethiatri- carbocyanine perchlorate was used in tetramethylene sulfoxide solution. By changing dye concentration, laser wavelengths from 950 to 1005 nm were obtained.     

多波长红外激光二极管峰值光谱热漂移研究

为了满足红外激光测试技术对多光谱集成光源在光谱范围和峰值精度等方面的要求,提出了一种高精度的多波长红外激光二极管,并设计了能够集成860 nm,905 nm和1064 nm(脉冲/单模)四种激光芯片的封装结构.建立了基于上述封装结构下中心热沉的温度场分布模型,并根据数学建模工具求解的中心热沉温度场数值分布规范了中心热沉的加工工艺.为了验证多波长激光二极管中心热沉对输出峰值光谱热漂移现象的抑制效果,制备了多波长激光二极管样机,并搭建了观察其峰值光谱热漂移现象的实验装置.实验结果显示,样机仅有两种芯片的峰值光谱发生了1—3 nm的微弱漂移,并未超出规定的峰值半宽.该现象证明了多波长激光二极管的输出光谱具备较高的精度和良好的稳定性.