半导体可饱和吸收镜实现固体激光器皮秒锁模的机理研究

对半导体可饱和吸收镜(SESAM)实现固体激光器皮秒锁模的机理进行了研究。通过对染料锁模介质和SESAM的结构对比,对SESAM皮秒锁模机理提出了一个新的解释。其在锁模激光器中充当锁模器件时,不仅仅是一个吸收体,同时也是一个增益介质。当腔内增益和损耗保持平衡时实现稳定的连续锁模。     

半导体可饱和吸收镜被动锁模侧面抽运Nd:YAG激光器研究

利用半导体可饱和吸收镜(SESAM)锁模技术实现的超快脉冲激光器具有结构简单紧凑、脉冲序列稳定等优势,在许多领域有着重要用途,自问世以来受到国内外的广泛关注.分析了SESAM被动锁模侧面抽运固体激光器的具体要求,进行了不同条件下的SESAM被动锁模侧面抽运Nd:YAG激光器实验.获得了最高平均功率9.5 W,脉冲重复频率71 MHz,单脉冲能量约141 nJ的皮秒激光脉冲.对SESAM被动锁模侧面抽运Nd:YAG激光器进行了实验和理论分析,对实现高功率连续超短脉冲激光器进行了探讨.     

LD泵浦、1W输出的Nd:GdVO4半导体可饱和吸收镜连续锁模激光器

报道了激光二极管泵浦、采用半导体可饱和吸收镜(SESAM)实现的Nd:GdVO4连续被动锁模运转激光器,得到了较大功率输出(接近1 W)的连续锁模激光.设计了四镜z型折叠激光谐振腔,在不同曲率半径的腔镜及不同的腔长条件下,分别获得了重复频率为250 MHz和100 MHz的稳定连续锁模脉冲输出.采用透过率1%的输出耦合镜,在泵浦功率为6.9 W时,得到连续锁模激光输出功率970 mW,光-光转换率达到13.7%.理论上讨论了调Q锁模的抑制措施,并结合实验结果进行了分析,得到了1063 nm稳定连续锁模激光输出,锁模脉冲光谱宽度1.2 nm(FWHM),用自相关仪测得脉宽为15.1 ps.     

基于大芯径晶体波导的半导体可饱和吸收镜锁模激光器

大芯径晶体波导可吸收更高功率的泵浦光,能够实现更高的输出功率,同时在锁模运行时芯层中的峰值功率密度相对较低,而且减少了非线性效应的积累。基于此,构建了一种基于Yb:YAG大芯径晶体方波导的被动锁模皮秒激光器。实验中,首先使用高反镜替代半导体可饱和吸收镜(SESAM),在较高的泵浦功率下调节晶体波导的位置和角度以实现泵浦光与波导芯层的匹配;然后,仔细调节球面反射镜的角度,使信号光耦合进波导芯层中以尽量减小腔内的损耗。所设计的激光器采用折叠腔结构,在腔内没有色散补偿器件的情况下,实现了平均功率为10.2 W、脉冲宽度为65 ps、重复频率为30.15 MHz、单脉冲能量为0.34μJ的激光输出。     

中间镜式半导体可饱和吸收镜在Nd∶YVO4激光器中被动调Q特性研究

利用一种新型的中间镜式半导体可饱和吸收镜,成功实现了二极管泵浦Nd∶YVO4激光器调Q运转,获得的最短脉冲宽度为8.3 ns,最大平均输出功率为135 mW,重复频率在400 KHz到2 MHz之间.利用这种吸收体被动调Q得到的重复频率大大高于所知的大多数吸收体所进行的被动调Q的重复频率.     

超低频率全正色散半导体可饱和吸收镜被动锁模光纤激光器

通过延长激光器环形腔腔长,利用高浓度掺杂的单模掺镱光纤,搭建了超低重复频率、全正色散结构的半导体可饱和吸收镜被动锁模光纤激光器。激光器的中心波长、重复频率、平均功率及单脉冲能量分别为1 064 nm,281.5 kHz,11 mW和39 nJ。为了稳定中心波长,实现自启动,激光器腔体内接入了一个带通滤波器。该激光器运行稳定,无调Q不稳定现象,极大减小了半导体可饱和吸收镜被损坏的机会。     

超低频率全正色散半导体可饱和吸收镜被动锁模光纤激光器

 通过延长激光器环形腔腔长,利用高浓度掺杂的单模掺镱光纤,搭建了超低重复频率、全正色散结构的半导体可饱和吸收镜被动锁模光纤激光器。激光器的中心波长、重复频率、平均功率及单脉冲能量分别为1 064 nm,281.5 kHz,11 mW和39 nJ。为了稳定中心波长,实现自启动,激光器腔体内接入了一个带通滤波器。该激光器运行稳定,无调Q不稳定现象,极大减小了半导体可饱和吸收镜被损坏的机会。     

用于钛宝石激光器自启动锁模的半导体可饱和吸收镜

报道国内首次制作的宽带低损耗半导体可饱和吸收镜（SESAM）。该反射镜已经成功用于钛宝石飞秒脉冲激光器的自启动锁模运转。     

用腔内半导体可饱和吸收镜钛宝石激光器中自锁模状态的实验研究

用可饱和吸收体镜(SESAM)的掺钛蓝宝石激光器能够稳定运转在三种不同的锁模状态,即可饱和吸收体被动锁模、孤子锁模加被动锁模和KLM锁模.分析了三种自锁模的机理和SESAM的作用.对SESAM实现KLM锁模的自启动机制进行了实验观察和讨论.从该激光器的KLM锁模状态,获得了小于18飞秒的锁模脉冲序列. 关键词： 半导体可饱和吸收镜 自锁模 钛宝石激光器     

用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模

制作了一种新型的半导体可饱和吸收镜——表面态型半导体可饱和吸收镜. 用表面态型半导体可饱和吸收镜作为被动锁模吸收体实现了半导体端面泵浦Yb∶YAG激光器被动调Q锁模. 在泵浦功率仅有1.4 W的情况下，获得了调Q锁模脉冲序列，锁模平均输出功率1 mW，锁模脉冲重复频率200 MHz     

Passively mode-locked Nd:GGG laser with a semiconductor saturable absorber mirror

The mode-locking operation of the Nd:GGG crystal with a semiconductor saturable absorber mirror (SESAM) was demonstrated. Continuous wave (CW) mode-locking was obtained with the pulse duration of 11 ps and the pulse repetition rate of 40.38 MHz. At 7 W of pump power, the maximum average output power of 1.1 W was obtained with the slope efficiency of 18.1%.     

Passively mode-locked fiber ring laser using semiconductor saturable absorber mirror

We experimentally demonstrate a fiber laser passively mode-locked by a semiconductor saturable absorber mirror (SESAM) in a ring cavity. A pulse series with a temporal width of 1 ns is generated at a repetition rate of 12.3 MHz. With careful polarization adjustment, the pulse width decreases, the peak power increases and the spectral sidebands are formed in the optical spectrum. The reason of the phenomenon above has been analyzed. In addition, the characteristic of the pulse with different length of the Er³⁺ Doped Fiber (EDF) is studied and the results show that it is reabsorption that causes the laser to shift to longer wavelength direction when the EDF length increases.     

4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror

We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

Passive mode locking of a diode-pumped Nd:Gd 0.64 Y 0.36 VO 4 laser with a GaAs saturable absorber mirror

We report a diode-pumped Nd:Gd_0.64Y_0.36VO₄ laser passively mode locked by using a GaAs saturable absorber mirror. Both the Q-switched and continuous-wave (CW) mode locking were experimentally realized. The CW mode-locked pulses have a pulse width of about 8.8 ps at a repetition rate of 161.3 MHz. Limited by the available pump power, a maximum output power of 2.47 W was obtained for the CW mode-locked pulses with a slope efficiency of about 26.6%.     

5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM). and the pulse repetition rate is 83 MHz.     

5.3-W Nd:YVO4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.     

5.1-ps passively mode-locked Nd:Gd0.42Y0.58VO4 laser with a LT-GaAs absorber

We propose a diode end-pumped passively mode-locked Nd: Gd0.42 Y0.58 VO4 (Nd: GdYVO4) laser at 1064nm using a GaAs absorber grown at low temperature as the output coupler.Stable continuous-wave (CW) mode locking with a 5.1-ps pulse duration at a repetition rate of 113MHz is obtained.The maximum average output power is 2.29W at the incident pump power of 12W with the slope efficiency of about 24.8%.     

Passively mode-locked Tm,Ho:YVO4 laser based on a semiconductor saturable absorber mirror

We report the demonstration of passively continuous-wave mode-locking(CWML) of diode-pumped Tm,Ho:YV04 laser using an InGaAs/GaAs multiple quantum-well(MQW) structure semiconductor as the saturable absorber.Stable mode-locking pulses at the central wavelength of 2 041 nm are obtained. The maximum output power is 151 mW.The pulse duration is 10.5 ps at the repetition rate of 64.3 MHz.     

Diode-pumped passively mode-locked Nd:Lu0.15Y0.85VO4 laser with a single-walled carbon nanotube saturable absorber

Diode-pumped passively mode-locked Nd:Lu_0.15Y_0.85VO₄ laser with a single-walled carbon nanotube saturable absorber was demonstrated for the first time, to our best knowledge. The laser generated 19-ps pulses with maximum output power of 902 mW for the incident pump power of 6.5 W at the central wavelength of 1064 nm, giving an optical conversion efficiency of 14%. The continuous wave mode-locking conditions of single-walled carbon nanotube saturable absorber were analyzed and discussed.