Growth and optical properties of self-frequency-doubling laser crystal Yb:LuAl3(BO3)4

Single crystal of Yb:LuAl₃(BO₃)₄(Yb:LuAB) was grown by the flux method for the first time. The cell parameters of the grown crystal were estimated by X-ray diffraction analysis. The result indicates the symmetry of trigonal space group R32, with lattice parameters a=b=9.26372 Å, c=7.21405 Å, V=536.14 Å³, and Z=4. The absorption and emission spectra of Yb:LuAB crystal at room temperature has also been studied. The fluorescence lifetime for Yb:LuAB crystal is about 1.48 ms. The heat capacity was measured from 25 to 500 °C. Its second harmonic generation efficiency in LuAl₃(BO₃)₄ crystal is 3–4 times that of KDP crystal. These results show that Yb:LuAB crystal would be a potential self-frequency-doubling laser crystal.     

Growth and characterization of the nonlinear optical single crystal: l-lysine acetate

Single crystals of l-lysine acetate, an organic nonlinear optical (NLO) material, were grown by the controlled evaporation of its aqueous solutions. Its solubility in aqueous solution was determined gravimetrically. The grown crystals were characterized by the single-crystal diffraction, X-ray powder diffraction, Fourier transform infrared and Raman spectra. The structure analysis reveals that it belongs to the monoclinic crystallographic system, space group P2₁, with cell parameters: a=5.420(2) Å, b=7.542(4) Å, c=12.653(1) Å, β=91.73(1)°, Z=2 and V=516.8 Å³. Experiments of thermogravimetric (TG) and differential thermal analysis (DTA) were carried out to study its thermal properties. The optical behaviours, including transmission spectrum and second harmonic generation (SHG), were investigated to study its linear and NLO properties.     

Growth, thermal and spectral properties of Nd-doped NaGd(MoO4)2 crystal

Nd³⁺-doped NaGd(MoO₄)₂ crystal with dimensions were grown by Czochralski method. Nd³⁺:NaGd(MoO₄)₂ crystal melts at 1182 °C. The hardness of Nd³⁺:NaGd(MoO₄)₂ crystal is 334 VDH. The specific heat is 72.6 cal/mol K. The thermal expansion coefficients are for c-axis and for a-axis, respectively. The absorption cross-sections of Nd³⁺:NaGd(MoO₄)₂ crystal are with a FWHM of 9 nm at the 804 nm for π-polarization and with a FWHM of 17 nm at 807 nm for σ-polarization, respectively. The emission cross-section σ_em are at 1063 nm for π-polarization and 1.94×10^-20 at 1070 nm cm² for σ-polarization, respectively. The fluorescence lifetime τ_f is 93.9 μs at room temperature.     

Orientation control of LaNiO3 thin films by RF magnetron sputtering with different oxygen partial pressure

Highly (1 1 0)- and (1 0 0)-oriented LaNiO₃ (LNO) thin films were successfully grown on Si (1 0 0) substrate using radio frequency (RF) magnetron sputtering at room temperature (RT). Effects of oxygen partial pressures on the orientation, film composition, surface morphology, and electrical properties of the films were investigated. The nearly complete (1 0 0) orientation was first achieved with oxygen partial pressure beyond 15% in the sputtering gas. The preferred (1 0 0) orientation of growing films is determined by uniform distribution of Ni³⁺ and La/Ni ratio in the films caused by oxygen during sputtering, as well as the lowest surface energy of the films in the crystalline process. LNO films with controlled orientation have low resistivity of 7.0×10⁻⁶ Ω m which is a good basis for integrating ferroelectric capacitors.     

Growth, refined structural and spectroscopic characteristics of Tm-doped NaGd(WO4)2 single crystals

The details of Tm³⁺-doped NaGd(WO₄)₂ single-crystal growth are discussed, the results of precise investigations of its structural and spectroscopic characteristics, as well as the analysis of cross-relaxation process of Tm³⁺ ions (³H₄→³F₄, ³H₆→³F₄) in this crystal are presented. Based on the Judd–Ofelt theory, three intensity parameters, spontaneous emission probabilities, fluorescence branching ratios and fluorescence quantum efficiency from ³H₄ and ³F₄ levels were refined.     

Ternary system Li2O–K2O–Nb2O5: Re-examination of the 30 mol% K2O isopleth and growth of fully stoichiometric potassium lithium niobate single crystals by the micro-pulling down technique

Potassium lithium niobate (KLN) single crystals have attractive properties for non-linear optical applications based on frequency conversion of laser diodes in the blue range. Especially, fully stoichiometric K₃Li₂Nb₅O₁₅ crystals would be capable of doubling a laser light in the near UV range. Using powder X-ray diffraction and DSC experiments, we have re-investigated the 30 mol% K₂O isopleth of the ternary system Li₂O–K₂O–Nb₂O₅ in order to explore the possibility of a limited existence field for this phase. From our results, it was shown that the stoichiometric KLN phase exists between 970 and 1040 °C, temperature at which it undergoes a non-congruent melting. From this conclusion, compositionally homogeneous a-axis oriented single crystals fibers of stoichiometric K₃Li₂Nb₅O₁₅ were successfully grown by the micro-pulling down technique with pulling rates in the range 0.3–0.7 mm min⁻¹. The crystal length was between 10 and 120 mm for an apparent diameter near 500 μm. The fibers, characterized by optical microscopy, X-ray diffraction and Raman spectroscopy, appeared free of macro-defects and of good quality and their stoichiometric composition was also confirmed.     

Optical properties of thin films of system (As2Se3)80−x(As2Te3)x(SnTe)20 prepared by PLD

Thin amorphous films from system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ were prepared by pulsed laser deposition (PLD) from their bulk glasses and their optical properties were studied by spectral ellipsometry. Spectral dependencies of refractive index, absorption and extinction coefficient and optical gap (1.41–1.66 eV for (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 20 resp. x = 0) were calculated from optical tansmittance, from ellipsometric data by Tauc method. High values of refractive index n₀ (2.49–2.60) and of non-linear χ⁽³⁾ coefficient of index of refraction (4.9–7.5 × 10⁻¹² esu for the glass (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 0 resp. x = 20) made studied thin films of system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ promising candidates for application in optics and optoelectronics.     

Crystal growth and luminescent properties of Pr-doped K(Y,Lu)3F10 single crystal for scintillator application

Pr1%:K(Y_1−xLu_x)₃F₁₀ (x=0, 0.2, 0.4) single crystals were grown by the μ-PD method. All the grown crystals were greenish and perfectly transparent without any inclusions or cracks. Radioluminescence spectra and decay kinetics of the Pr1%:K(Y,Lu)₃F₁₀ crystals were measured. Emission from the Pr³⁺ 5d–4f transition, peaking around 260 nm and of the decay time of around 22 ns were observed. The 5d–4f emission intensities of the Pr1%:K(Y,Lu)₃F₁₀ crystals were higher than that of the standard BGO scintillator.     

Crystal growth of KInO2 from a hydroxide flux

Single crystals of KInO₂ were obtained from a reactive potassium hydroxide flux at 700 °C. KInO₂ crystallizes in the R-3m crystal system with a=3.2998(10) Å, c=18.322(10) Å and V=172.78(12) Å³. The crystal structure is isotypic with that of α-NaFeO₂ and consists of the (1 1 1) layers being occupied alternately by KO₆ and InO₆ octahedra. Three different AInO₂ structure types are discussed.     

New photoluminophore nanocomposite based on organic compound with Eu ions and copolymer styrene-butylmethacrilate

New nanocomposite (NC) material on the base of thenoyltrifluoroacetone (TTA) coordinated with trivalent europium ions and structured with phenantroline (Eu(TTA)₃Phen) and copolymer from styrene and butylmethacrylate (1:1) (SBMA) was prepared. The visible photoluminescence spectra of composites excited with N₂-laser (λ = 0.337 μm) at room and T = 78 K temperatures were studied. For the Eu(TTA)₃Phen/SBMA nanocomposite material emission bands located at 578, 590, 612, 675 and 705 nm can be attributed to the spin forbidden f–f transitions ⁵D₀ → ⁷F_i (i = 0,1,2,3 and 4), respectively. The more intensive luminescence band situated at 612 nm with the half width of 3 nm is connected to the Eu³⁺ ion electronic transition ⁵D₀ → ⁷F₂. It was shown that the maximum intensity of photoluminescence occurs at the concentration of 15% of the Eu(TTA)₃Phen in the SBMA polymer matrix.     

Lu5Ir4Si10 whiskers: Morphology,crystal structure,superconducting and charge density wave transition studies

Highly perfect single crystal whiskers of Lu₅Ir₄Si₁₀ were successfully grown out of the melt. Details of the surface and morphology of the whiskers are presented. X-ray diffraction data confirmed that the whisker structure has the same tetragonal P4/mbm space group symmetry as bulk single crystals with lattice parameters a=12.484(1) and c=4.190(2) Å. By means of field emission scanning electron microscopy, the morphology of the whiskers has been studied. Using a 4-circle X-ray diffractometer we found that whiskers grow along the c-axis direction and all side faces are oriented along the [1 1 0] direction. The mosaicity has been measured and is found to be almost perfect: below 0.15° along the c-axis. According to our transport measurements performed along the c-axis, the whiskers present a sharp superconducting transition at T_c=4.1 K and show a charge density wave (CDW) transition at 77 K. From the hysteresis of the temperature dependance of the electrical resistivity study, the CDW transition is found to be of first order.     

Growth and Raman spectroscopic characterization of As4S4 (II) single crystals

As described by Kutoglu (1976 [16]), single crystals of As₄S₄ (II) phase have been grown using a new two-step synthesis that drastically increases the reproducibility that is attainable in synthetic experiments. First, through photo-induced phase transformation, pararealgar powder is prepared as a precursor instead of AsS melt. Then it is dissolved and recrystallized from CS₂ solvent. Results show that single crystals of the As₄S₄ (II) phase were obtained reproducibly through the dissolution–recrystallization process. Single crystals of As₄S₄ (II) obtained using this method were translucent and showed a uniform yellow-orange color. The crystal exhibits a platelet-like shape as a thin film with well-developed faces (0 1 0) and (0 1¯ 0). The grown crystals are as large as 0.50×0.50×0.01 mm. They were characterized using powder and single crystal X-ray diffraction techniques to confirm the phase identification and the lattice parameters. The As₄S₄ (II) phase crystallizes in monoclinic system with cell parameters a=11.202(4) Å, b=9.954(4) Å, c=7.142(4) Å, β=92.81(4)°, V=795.4(6) Å³, which shows good agreement with the former value. Raman spectroscopic studies elucidated the behavior of the substance and the relation among phases of tetra-arsenic tetrasulfide.     

Hydrothermal Synthesis, Structural Characterization and Luminescent Property of a New 1-D Chain-like [Er(NC6H4O2)3(H2O)2]n

Abstract  

Erbium (III) coordination compound with the formula [Er(IN)₃(H₂O)₂]_n 1 (HIN = isonicotinic acid) was synthesized by mixing Er₂O₃ with isonicotinic acid under hydrothermal condition. The structure of the title compound was determined by single crystal X-ray diffraction analysis, which reveals that the 1-D chain-like structure is formed by the erbium polyhedra through the carboxyl groups of IN. It crystallizes in the monoclinic system, possesses space group C2/c, with lattice parameters: a = 20.229(10) ?, b = 11.594(6) ?, c = 9.871(5) ?, α = γ=90°, β = 115.509(6)°, V = 2089.3(18) ?³, and D _calc = 1.811 mg/cm³ for Z = 4, F(000) = 1108, GOF = 1.109, R1 = 0.0675. Compound 1 has been characterized by IR absorption spectroscopy, ultraviolet excitation and emission spectrum.     

Molecular beam epitaxy of Ca1−xRxF2+x (R=Nd, Er) layers: study of RHEED pattern and lattice mismatch

Ca_1−xNd_xF_2+x and Ca_1−xEr_xF_2+x layers were grown on CaF₂(1 1 1) substrates at 600 and 550°C, respectively, by molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) investigation revealed that Ca_1−xNd_xF_2+x layers have two types of surface structure, namely (1×1) and ( )R30⁰ with hexagonal symmetry, depending on Nd mole fraction, while Ca_1−xEr_xF_2+x layers have three types of surface structure, namely (1×1) and (2×2) with hexagonal symmetry, and a triple rotated domain structure based on a rectangular cell depending on Er mole fraction. The lattice mismatch of the epilayers and substrate, which is important for applications involving buffer layers, was measured by X-ray rocking curve (XRC) analysis.     

Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates

Growth on AlN/4H–SiC substrates of coalesced, non-polar GaN films having volumes of material with reduced densities of dislocations and stacking faults has been achieved from etched stripes via the statistical and experimental determination of the effect of temperature and V/III ratio on the lateral and vertical growth rates of the GaN{0 0 0 1} faces combined with pendeo-epitaxy. AFM of the uncoalesced GaN(0 0 0 1) and GaN vertical faces revealed growth steps with some steps terminating at dislocations on the former and a pitted surface without growth steps, indicative of decomposition, on the latter. Coalescence was achieved via (a) a two-step route and the parameters of (1) and V/III=1323 for 40 min and (2) 1020 °C and V/III=660 for 40 min and (b) a one-step route that employed and a V/III ratio=660 for 6 h. The densities of dislocations in the GaN grown vertically over and laterally from the stripes were 4×10¹⁰ cm⁻² and 2×10⁸ cm⁻², respectively; the densities of stacking fault in these volumes were 1×10⁶ cm⁻¹ and 2×10⁴ cm⁻¹, respectively. The defects in the wing material were observed primarily at the bottom of the film where lateral growth of the GaN occurred from the AlN and the SiC. Plan view AFM also revealed different microstructures and a reduction in the RMS roughness values from 1.2 to 0.95 nm in these respective regions.     

High-resolution imaging of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N

We report the observation of ordering in Al_0.3Ga_0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2¯ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO₂ mask was patterned along the [1 1 2¯ 0]_sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2¯ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al_0.3Ga_0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al_0.3Ga_0.7N layers grown at the same time on the c-plane GaN facets.     

Chloride Metathesis and Dimethylamide Transfer in the Reaction of TaCl(NMe2)4 with ZnMe2 and MeMgCl: Spectroscopic Studies and X-ray Diffraction Structures of TaCl(Me)(NMe2)3 and ZnCl2(NHMe2)2

Abstract  

Treatment of TaCl(NMe₂)₄ with ZnMe₂ in pentane furnishes a mixture of TaCl(Me)(NMe₂)₃, TaMe(NMe₂)₄, and Ta(NMe₂)₅ as the principal reaction products based on ¹H NMR spectroscopy. Depending upon the work-up conditions employed, the compounds TaCl(Me)(NMe₂)₃ and ZnCl₂(NHMe₂)₂ have been isolated and their molecular structures established by X-ray crystallography. TaCl(Me)(NMe₂)₃ crystallizes in the orthorhombic space group Pna2₁, a = 13.644(4) ?, b = 12.934(4) ?, c = 6.992(2) ?, V = 1233.9(7) ?³, Z = 4, and d _calc = 1.958 Mg/m³; R = 0.0316 and wR ₂ = 0.0707 for 2630 reflections with I > 2σ(I). The molecular structure of TaCl(Me)(NMe₂)₃ consists of a trigonal bipyramidal core and contains axial and equatorial chlorine and methyl groups, respectively. ZnCl₂(NHMe₂)₂ crystallizes in the orthorhombic space group P2₁2₁2₁, a = 5.759(1) ?, b = 10.810(2) ?, c = 15.174(3) ?, V = 944.1(3) ?³, Z = 4, d _calc = 1.593 Mg/m³; R = 0.0213 and wR ₂ = 0.0494 for 1872 reflections with I > 2σ(I). ZnCl₂(NHMe₂)₂ exhibits a tetrahedral motif and represents the first reported four-coordinate zinc(II) compound containing acyclic monodentate secondary amine groups. The reaction between TaCl(NMe₂)₄ and MeMgCl afforded a mixture of tantalum products, of which TaCl(Me)(NMe₂)₃ and Ta(NMe₂)₅ were found as the major products by ¹H NMR spectroscopy.     

Electrical and optical properties of Cd1−xZnxS (0x0.18) grown by chemical bath deposition

Cd_1−xZn_xS films with 0x0.18 were grown by chemical bath deposition technique on glass substrates from an aqueous solution containing cadmium and zinc sulfate, ammonia and thiourea. Microstructural features, obtained from X-ray diffraction and scanning electron microscopy (SEM) measurements, reveal a predominance of Wurtzite structure and an homogenous microstructure formed by densely microcrystallines for all the samples studied. Cd_1−xZn_xS semiconductor was found to be resistive and of n-type. Also, the electron density decreases with increased x and the mobility reaches a maximum around x=0.12. Which means that the Cd_1−xZn_xS films at this composition are of high crystalline quality, i.e. having reduced intrinsic defect concentrations.     

Crystal and Molecular Structures of C6H5CH2SOCH2CONHCH2C6H5 and C6H5SOCH2CON(iC3H7)2

Abstract  The crystal structures for two of the ligands C₆H₅CH₂SOCH₂CONHCH₂C₆H₅ (1) and C₆H₅SOCH₂CON(ⁱC₃H₇)₂ (2) have been determined by X-ray diffraction. These compounds crystallize in orthorhombic system with space groups and cell parameters, Pca21(no. 29), a = 8.4600(5) ?, b = 5.3534(5) ?, c = 32.136(2) ?, V = 1455.42(15) ?³ and Pna21(no. 33) a = 17.5563(11) ?, b = 5.7902(4) ?, c = 14.2866(9) ?, V = 1452.30(16) ?³, respectively. These molecules are stabilized in solid state by various intra and intermolecular hydrogen bonding interactions to give polymeric structures. The reported IR spectra of these compounds in solid state could be explained on the basis of the observed intermolecular hydrogen bonding interactions. Index Abstract  The title compounds C₆H₅CH₂SOCH₂CONHCH₂C₆H₅ (1) and C₆H₅SOCH₂CON(ⁱC₃H₇)₂ (2) were prepared by the oxidation of corresponding sulfides with H₂O₂/SeO₂ in methanol and their structures were determined. The structures show that the SO and CO groups are having “anti” configuration in 1 and “syn” configuration in 2. Electronic supplementary material  The online version of this article (doi:) contains supplementary material, which is available to authorized users.     

Crystal growth of the quasi-one dimensional spin-magnet LiCuVO4

The phase relationships in the Li–Cu–V–O and Li–Cu–V–O–Cl systems were investigated and the phase diagrams determined. Based on these diagrams single crystals of the low-dimensional spin compound LiCuVO₄ with maximal dimensions up to 12×3×3 mm³ were grown from a solution of LiCuVO₄ in a LiVO₃ or a LiVO₃–LiCl melt. The stoichiometry of the grown crystals is discussed.