Impact of a DC magnetic field on evanescent wave intensity amplification for a magnetocompensated antiferromagnet

The impact of a dc magnetic field on evanescent TE and TM waves at the interface of transparent media comprising a semiconductor layer and a semi-infinite antiferromagnet is investigated using Otto geometry as an example. It is shown that switching a dc magnetic field orthogonal to a sagittal plane allows maximum amplification of the intensity of propagating evanescent TM or TE waves in both a layer and in semi-infinite space. The optimum conditions correspond to the formation of a peculiar TM or TE surface wave.     

A mixed metal dielectric sandwiched grating for polarization-selective reflection

A mixed metal dielectric sandwiched grating is described for polarization-selective reflection. The novel grating is composed of substrate, metal slab, two dielectric grating layers, and covering layer. The polarization-selective grating is optimized by using rigorous coupled-wave analysis for the usual duty cycle of 0.5. With the optimized grating parameters, reflective efficiency of 96.49% can be diffracted into the −1st order for TE polarization. And two-port output of 48.26%/48.27% can be diffracted into the 0th and the −1st orders for TM polarization. Polarization-selective reflection with good performance can be obtained by the mixed metal dielectric sandwiched grating. The usual duty cycle of 0.5 makes it easy and simple to be fabricated for practical applications. Moreover, the polarization-selective beam splitter based on the mixed metal dielectric sandwiched grating has advantages of wide incident wavelength range for TE polarization and angular bandwidth for TM polarization.     

Metallic rugate structures for near-perfect absorbers in visible and near-infrared regions

Metallic rugate structures are theoretically investigated for achieving near-perfect absorption in the visible and near-infrared regions. Our model builds on nanoporous metal films whose porosity (volume fraction of voids) follows a sinewave along the film thickness. By setting the initial phase of porosity at the top surface as 0, near-perfect absorption is obtained. The impacts of various structural parameters on the characteristic absorption behaviors are studied. Furthermore, multiple peaks or bands with high absorption can be achieved by integrating several periodicities in one structure. The rugate absorbers show near-perfect absorption for TE and TM polarizations and large incident angles.     

Theoretical study of polymeric metal clad optical waveguide polarizer

Planar optical waveguides consisting of thin dielectric films and buffer layers with metal cladding have been investigated theoretically. A computer program was written to calculate the exact zeroes of complex eigenvalue equation for TE and TM modes in multilayer metal clad waveguide polarizer. Numerical results and illustrations are given for Polycarbonate waveguide with other polymers as buffer and Al, Ag and Au as cladding metals at . It is also shown that, using thin (finite) films of metal produce more efficient polarizers as compared to semi-infinite metal films. Effect of low index buffer layer on attenuation of TM/TE modes is also investigated.     

Fabrication and performance of a medium-dependent SiO2/Si photonic heterostructure device

An optical device based on a photonic bandgap heterostructure is designed, fabricated, and characterized. The sample contains two sets of Si/SiO2 photonic crystals with different periods. When the device is working in air, it reflects omnidirectionally both TE and TM mode lights at the wavelength near 1.3 microm. The reflectivity measured in the bandgap is higher than 98% in an incident angle range 0 degrees-70 degrees. When the device is surrounded with silica (n > 1.33), it permits the total transmission for the TM mode but prevents the TE mode from propagating, thus behaving as a polarization splitter. The experimental extinction ratio of the reflected TE/TM is approximately 31 dB. The uniformity of the device performance over a large sample area is demonstrated.     

High extinction ratio metal-insulator-semiconductor waveguide surface plasmon polariton polarizer

The attenuation characteristics of a multilayer metal clad GaAs-AlGaAs optical waveguide polarizer are theoretically investigated. The dispersion relations and field distribution of the multilayer structures are calculated for different geometrical parameters and material properties. The polarizer studied consists of a single mode finite/infinite metal clad GaAs-AlGaAs waveguide with a dielectric (SiO₂/Si₃N₄) buffer layer inserted between the metal and the waveguide.Conventionally, the TM polarized waves are found to exhibit an absorption peak at a particular buffer thickness (called critical buffer thickness).We shall show that the maximum TM absorption can be improved by a multiple factor up to 7 by choosing a buffer layer thicker than its critical value. This corresponds to an extinction ratio of 1470 dB for a polarizer length of 1 mm. Further, thicker buffers reduce the insertion losses and values as low as 0.1 dB can be obtained. The strong TM absorption in these structures is interpreted as resonant coupling of the guided mode to the lossy surface plasmon polariton supported by the thin metal film. Thicker buffer also reduces the TE losses (insertion losses) and hence increases the extinction ratio (ratio of TM to TE losses).This can be achieved by optimizing the buffer and the metal thicknesses. Another equally efficient polarizer can be designed by positioning a dielectric (same as buffer) layer (superstrate layer) above the metal film and then optimizing the buffer, metal and the superstrate thicknesses. We also show that the proposed polarizer with the superstrate layer is highly stable even when exposed to the extreme atmospheric changes.     

Structural,electronic,and magnetic behaviors of 5d transition metal atom substituted divacancy graphene:A first-principles study

Structural, electronic, and magnetic behaviors of 5d transition metal(TM) atom substituted divacancy(DV) graphene are investigated using first-principles calculations. Different 5d TM atoms(Hf, Ta, W, Re, Os, Ir, and Pt) are embedded in graphene, these impurity atoms replace 2 carbon atoms in the graphene sheet. It is revealed that the charge transfer occurs from 5d TM atoms to the graphene layer. Hf, Ta, and W substituted graphene structures exhibit a finite band gap at high symmetric K-point in their spin up and spin down channels with 0.783 μB, 1.65 μB, and 1.78 μB magnetic moments,respectively. Ir and Pt substituted graphene structures display indirect band gap semiconductor behavior. Interestingly, Os substituted graphene shows direct band gap semiconductor behavior having a band gap of approximately 0.4 e V in their spin up channel with 1.5 μB magnetic moment. Through density of states(DOS) analysis, we can predict that d orbitals of 5d TM atoms could be responsible for introducing ferromagnetism in the graphene layer. We believe that our obtained results provide a new route for potential applications of dilute magnetic semiconductors and half-metals in spintronic devices by employing 5d transition metal atom-doped graphene complexes.     

Trimming of microring resonators by photooxidation of a plasma-polymerized organosilane cladding material

As the complexity of microphotonic devices grows, the ability to precisely trim microring resonators becomes increasingly important. Photo-oxidation trimming uses UV irradiation to oxidize a cladding layer composed of polymerized hexamethyldisilane (6M2S) deposited with plasma-enhanced chemical vapor deposition (PECVD). PECVD 6M2S has optical properties that are compatible with microring devices, and its high cross linking renders it insoluble. Photo-oxidation decreases the refractive index of PECVD 6M2S by nearly 4%, permitting large resonance shifts that are not feasible with thermal trimming techniques. Resonance shifts from single-mode, 100 microm diameter Si3N4 (n =2.2) rings were as large as 12.8 nm for the TE mode and 23.5 nm for the TM mode.     

具有非局域介电函数超晶格中的电磁模

针对第1类半导体超晶格,如GaAs/GaAlAs多层交替结构,利用在低温及长波极限下有效的非局域介电函数张量,在长波极限下,根据Maxwell方程,研究了超晶格中的TM与TE电磁模,分别获得了它们的色散关系。 关键词：     

一维电介质-金属光子晶体的光学特性研究

利用传输矩阵方法,研究了一维电介质-金属光子晶体的光学特性,该光子晶体通过在Si/SiO₂组成的电介质型光子晶体中插入一定厚度Al层形成。计算结果表明,金属层的引入可以有效提高反射效率,[Si(46 nm)/SiO₂(60 nm)/Al(10 nm)/SiO₂(60 nm)]5结构的单位周期传输衰减从[Si(46 nm)/SiO₂(120 nm)]5的7.2 dB增大到了20 dB;可以得到更宽频率范围的全方向反射带隙,例如[Si(46 nm)/SiO₂(60 nm)/Al(30 nm)/SiO₂(60 nm)]5结构即可提供550 nm带宽的全方向反射;同时讨论了金属吸收、金属层厚度及插入位置对其光学特性的影响。这种电介质-金属光子晶体有望作为性能优异的光学反射镜得到应用。     

Ferroelectric characteristics of MFIS structure with P(VDF–TrFE)/BaTiO3 nanocomposite as ferroelectric layer

A metal–ferroelectric–insulator–semiconductor (MFIS) structure has been made using poly(vinylidene difluoride–trifluoroethylene)/barium titanate [P(VDF–TrFE)/BaTiO₃] nanocomposite as ferroelectric layer, on silicon/silicon dioxide (Si/SiO₂) substrate. Different concentrations of BaTiO₃ were added to P(VDF–TrFE) polymer using bath sonication method, and the films were prepared using spin coating method. The structure was annealed to 120 °C for 2 h and then the top aluminium electrode was deposited by thermal evaporation method. Capacitance–voltage shows an increase in accumulation capacitance as the BaTiO₃ nanoparticle concentrations increases. Dielectric constant was estimated from the capacitance voltage (C–V) characteristics and found to be changing as the concentration of BaTiO₃ is varied. Polarization–electric field analyses show hysteresis behaviour of the nanocomposite. A comparison of MFIS and metal–ferroelectric–semiconductor structures was done with varying ferroelectric film thicknesses. All these results suggest that this polymer nanocomposite can be a promising material which can be used in non-volatile memory devices.     

高功率微波弯曲圆波导设计

 报道了可分别传输TM₀₁模和TE₀₁模的两种弯曲圆波导的设计方法和计算结果。研究表明：所设计的TM01模弯曲波导和TE₀₁模弯曲波导在中心频率上传输效率均超过99.5%,传输效率大于95%的带宽分别达到20.0%和14.4%;该两个弯曲波导也分别适用于传输TE₁₁模和TM₁₁模;水平极化TE₁₁模与TM₀₁模、垂直极化TM₁₁模与TE₀₁模在弯曲圆波导中传输时具有相似的传输效率和频带特性;而垂直极化TE₁₁模、水平极化TM₁₁模由于不易和其它模式耦合,在弯曲波导中传输时具有较高的传输效率。     

基于一维金属-介质周期结构的偏振分束

分析了一维金属一介质周期结构的能带特性,根据一定频率范围内TM波(磁场方向与界面平行)在结构中的负折射以及TE波的正常折射,提出了一种偏振分束器件.利用传输矩阵法(TMM)模拟了该结构对入射高斯光束的偏振分束作用,讨论了不同入射角度下的偏振分束能力,并结合实际金属参量,分析了金属层吸收对结构特性的影响.结果表明该结构在55°附近入射时有最好的性能;在吸收作用下结构偏振分束能力有一定的减小,TM波透射比发生了较大变化,TE波效果较好;随着周期数增加,结构透射比下降,但分光能力显著提高;在工作波段上随着波长增大,金属层吸收对器件的影响减弱.该结构能实现宽波段、宽角度、较高透射比的偏振分束.     

纳米多孔SiO2薄膜的制备与红外光谱研究

以正硅酸乙酯为原料,采用溶胶-凝胶法,结合旋转涂胶、超临界干燥工艺在硅片上制备了纳米多孔SiO2薄膜。XRD表明薄膜为无定形态;SEM显示薄膜具有多孔网络结构,其SiO2粒子直径为10~20nm。利用FTIR研究了薄膜的结构,纳米多孔SiO2薄膜含有Si—O—Si与Si—OR结构,呈疏水性;该SiO2薄膜热处理后因含有Si—OH基团而呈吸水性;用三甲基氯硅烷对热处理SiO2薄膜进行修饰可使其呈疏水性,修饰后的薄膜在N2中温度不高于450℃可保持其疏水性与多孔结构。     

对称平面单轴晶体金属波导的模式场(1)

由于平面各向异性介质金属波导的重要应用,本文讨论了光在对称平面单轴晶体金属波导(波导层是单轴晶体,两个波导界面均为金属)内的传输特性.对于晶体光轴位于波导界面法方向与传输方向构成的平面内的特殊波导结构,利用麦克斯韦方程组并结合单轴晶体的性质,精确解出了波导模式场.结果表明:1)此种特殊结构波导内存在横电波(TE)和横磁波(TM);2)TM波的坡印廷矢量与波矢方向不在一条直线上;3)波导层为负单轴晶体时波导主模是TE波主模,而波导层为正单轴晶体时波导主模是TM波主模.     

介质层厚度无序对Bragg微腔模式的影响

采用本征模展开法(EME)结合完全匹配层（PML）边界条件,研究了由TiO2和SiO2复合膜结构组成的平面光子晶体Bragg微腔的模式特性,分析了介质厚度无序对微腔模式的调制以及入射角对局域长度的影响.结果表明,若光束正入射,带边局域长度要大于禁带局域长度,随着无序度的增加光子通带的透过率逐渐降低,而禁带的透过率逐渐上升.当无序度较小时,局域长度随随机度的变化在带边和禁带内表现出相反的规律.当无序度较大时,局域长度不仅和随机度、带隙有关,还受到材料的影响;若光束斜入射,TE模的局域长度要远小于TM模对应的值,且其最小值向短波方向移动。此外,入射角和膜层数的变化都会导致局域长度的起伏.     

Plasmons in waveguide structures formed by two graphene layers

Plasmon modes in a waveguide formed by two parallel graphene layers with an insulator spacer layer are considered. The existence of TM and TE guided modes is predicted and their properties are compared with those of plasmons in metal/insulator waveguides.     

Optimal design of sub-wavelength metal rectangular gratings for polarizing beam splitter based on effective medium theory

A novel optimal design of sub-wavelength metal rectangular gratings for the polarizing beam splitter (PBS) is proposed. The method is based on effective medium theory and the method of designing single layer antireflection coating. The polarization performance of PBS is discussed by rigorous couple-wave analysis (RCWA) method at a wavelength of 1550~nm. The result shows that sub-wavelength metal rectangular grating is characterized by a high reflectivity, like metal films for TE polarization, and high transmissivity, like dielectric films for TM polarization. The optimal design accords well with the results simulated by RCWA method.     

A novel coupled quantum well structure and its excellent electro-optical properties

A novel InGaAs/InAlAs coupled quantum well structure is proposed for large field-induced refractive index change with low absorption loss. In the case of low applied electric field of 15 kV/cm and low absorption loss (α≤ 100 cm-1), a large field-induced refractive index change (for transverse electric (TE) mode, △n = 0.012; for transverse magnetic (TM) mode, △n = 0.0126) is obtained in the structure at the operation wavelength of 1.55 μm. The value is larger by over one order of magnitude than that in a rectangular quantum well. The result is very attractive for semiconductor optical switching devices.     

1.5μm Ti:LiNbO_3光波导TE_0模偏振器

在1.523μm波长He-Ne激光,对于Z切Ti扩散LiNbO_3光波导及其带有金属包覆/介质缓冲层的偏振器结构,理论上计算了单模波导的工艺参数和基模的吸收损耗系数.文中用TM_0模的共振吸收效应,在1.5μm波长首次研制成Ti:LiNbO_3光波导TE_0模偏振器.当器件长度为2mm和9mm时,其消光比分别为20dB和25dB.