High-power quantum well remote junction laser and its electrical noise characteristics

We designed and fabricated new structure lasers, the high-power AlGaAs/GaAs remote junction (RJ) single quantum well (SQW) semiconductor lasers whose p–n junction was separated from the active layer. The RJ lasers showed marked reduction of threshold current during early aging period. This reduction was accompanied by a decrease of non-radiative recombination centers in the active layer. For the RJ SQW lasers, the relation between the low-frequency electrical noise and the lifetime of devices is different from the conventional SQW lasers.     

Intraband photoresponse of SiGe quantum dot/quantum well multilayers

In this contribution we study the intravalence band photoexcitation of holes from self-assembled Ge quantum dots (QDs) in Si followed by spatial carrier transfer into SiGe quantum well (QW) channels located close to the Ge dot layers. The structures show maximum response in the important wavelength range 3–5 μm. The influence of the SiGe hole channel on photo- and dark current is studied depending on temperature and the spatial separation of QWs and dot layers. Introduction of the SiGe channel in the active region of the structure increases the photoresponsivity by up to about two orders of magnitude to values of 90 mA/W at T=20 K. The highest response values are obtained for structures with small layer separation (10 nm) that enable efficient transfer of photoexcited holes from QD to QW layers. The results indicate that Si/Ge QD structures with lateral photodetection promise very sensitive large area mid-infrared photodetectors with integrated readout microelectronics in Si technology.     

Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors

We have measured and analyzed, at different temperatures and bias voltages, the dark noise spectra of GaAs/AlGaAs heterojunction infrared photodetectors, where a highly doped GaAs emitter is sandwiched between two AlGaAs barriers. The noise and gain mechanisms associated with the carrier transport are investigated, and it is shown that a lower noise spectral density is observed for a device with a flat barrier, and thicker emitter. Despite the lower noise power spectral density of flat barrier device, comparison of the dark and photocurrent noise gain between flat and graded barrier samples confirmed that the escape probability of carriers (or detectivity) is enhanced by grading the barrier. The grading suppresses recombination owing to the higher momentum of carriers in the barrier. Optimizing the emitter thickness of the graded barrier to enhance the absorption efficiency, and increase the escape probability and lower the dark current, enhances the specific detectivity of devices.     

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

We have demonstrated GaN/AlN quantum dots (QD) photodetectors, relying on intraband absorption and in-plane carrier transport in the wetting layer. The devices operate at room temperature in the wavelength range 1.3–1.5 μm. Samples with 20 periods of Si-doped GaN QD layers, separated by 3 nm-thick AlN barriers, have been grown by plasma-assisted molecular-beam epitaxy on an AlN buffer on a c-sapphire substrate. Self-organized dots are formed by the deposition of 5 monolayers of GaN under nitrogen-rich conditions. The dot height is 1.2±0.6 to 1.3±0.6 nm and the dot density is in the range 10¹¹–10¹² cm⁻². Two ohmic contacts were deposited on the sample surface and annealed in order to contact the buried QD layers. The dots exhibit TM polarized absorption linked to the s–p_z transition. The photocurrent at 300 K is slightly blue-shifted with respect to the s–p_z intraband absorption. The responsivity increases exponentially with temperature and reaches a record value of 10 mA/W at 300 K for detectors with interdigitated contacts.     

Wavelength and polarization selective multi-band tunnelling quantum dot detectors

The reduction of the dark current without reducing the photocurrent is a considerable challenge in developing far-infrared (FIR)/terahertz detectors. Since quantum dot (QD) based detectors inherently show low dark current, a QD-based structure is an appropriate choice for terahertz detectors. The work reported here discusses multi-band tunnelling quantum dot infrared photo detector (T-QDIP) structures designed for high temperature operation covering the range from mid-to far-infrared. These structures grown by molecular beam epitaxy consist of a QD (InGaAs or InAlAs) placed in a well (GaAs/AlGaAs) with a double-barrier system (AlGaAs/InGaAs/AlGaAs) adjacent to it. The photocurrent, which can be selectively collected by resonant tunnelling, is generated by a transition of carriers from the ground state in the QD to a state in the well coupled with a state in the double-barrier system. The double-barrier system blocks the majority of carriers contributing to the dark current. Several important properties of T-QDIP detectors such as the multi-colour (multi-band) nature of the photoresponse, the selectivity of the operating wavelength by the applied bias, and the polarization sensitivity of the response peaks, are also discussed.     

Multi-color tunneling quantum dot infrared photodetectors operating at room temperature

Quantum dot structures designed for multi-color infrared detection and high temperature (or room temperature) operation are demonstrated. A novel approach, tunneling quantum dot (T-QD), was successfully demonstrated with a detector that can be operated at room temperature due to the reduction of the dark current by blocking barriers incorporated into the structure. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunneling, while the dark current is blocked by AlGaAs/InGaAs tunneling barriers placed in the structure. A two-color tunneling-quantum dot infrared photodetector (T-QDIP) with photoresponse peaks at 6 μm and 17 μm operating at room temperature will be discussed. Furthermore, the idea can be used to develop terahertz T-QD detectors operating at high temperatures. Successful results obtained for a T-QDIP designed for THz operations are presented. Another approach, bi-layer quantum dot, uses two layers of InAs quantum dots (QDs) with different sizes separated by a thin GaAs layer. The detector response was observed at three distinct wavelengths in short-, mid-, and far-infrared regions (5.6, 8.0, and 23.0 μm). Based on theoretical calculations, photoluminescence and infrared spectral measurements, the 5.6 and 23.0 μm peaks are connected to the states in smaller QDs in the structure. The narrow peaks emphasize the uniform size distribution of QDs grown by molecular beam epitaxy. These detectors can be employed in numerous applications such as environmental monitoring, spectroscopy, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.     

Modulation-doping in 3–5 μm GaAs/AlAs/AlGaAs double barrier quantum well infrared photodetectors: an alternative to achieve high photovoltaic performance and high temperature detection

In this work we propose new detector designs, which allow achieving mid-infrared photovoltaic (PV) detection at temperatures as high as 180 K. The devices, which are grown by molecular beam epitaxy, are modulation-doped (MD) double barrier quantum well infrared photodetectors (QWIPs) based on AlGaAs/AlAs/GaAs. As the photocurrent spectra and I–V characteristics (in the dark and under infrared illumination) show that the dopant location is a relevant design parameter regarding the performance of PV QWIPs, we begin our work with a comparison of the performance of a set of MD samples (where we have varied the dopant location in the AlGaAs barriers) with respect to a well-doped sample of nominally the same structure. We find that the responsivity and detectivity of the MD devices seem to be higher than those of the well-doped detector, specially when the dopant is located in the substrate-sided barrier. Then, in order to improve the dark current-limited performance, we designed a new set of substrated-sided MD detectors that exhibit an extremely low dark current, even at high temperatures, otherwise no drop in the zero bias peak responsivity. Therefore, the association of the notable PV signal detection in the 3–5 μm range of these MD detectors together with the dark current reduction of the new structures has allowed us to achieve a 140 K zero bias peak responsivity of 0.015 A/W and a 180 K zero bias peak responsivity of 0.01 A/W at 4.4 μm.     

Investigation of the quantum dot infrared photodetectors dark current

Quantum dot infrared photodetectors (QDIPs) are more efficient than other types of semiconductor based photodetectors; so it has become an actively developed field of research. In this paper quantum dot infrared photodetector dark current is evaluated theoretically. This evaluation is based on the model that was developed by Ryzhii et al. Here it is assumed that both thermionic emission and field-assisted tunneling mechanisms determine the dark current of QDIPs; moreover we have considered Richardson effect, which has not been taken into account in previous research. Then a new formula for estimating average number of electrons in a quantum dot infrared photodetector is derived. Considering the Richardson effect and field-assisted tunneling mechanisms in the dark current improves the accuracy of algorithm and causes the theoretical data to fit better in the experiment. The QDIPs dark current temperature and biasing voltage dependency, contribution of thermionic emission and field-assisted tunneling at various temperatures and biasing voltage in the QDIPs dark current are investigated. Moreover, the other parameter effects like quantum dot (QD) density and QD size effect on the QDIPs dark current are investigated.     

First room temperature lasing from the fundamental state of V-grooved quantum wire lasers

Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4–300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.     

Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

Current–voltage and low frequency excess electrical noise characteristics of two different—Schottky diode and n-i-n diode—GaAs structures embedded with self-assembled In(Ga)As quantum dots are reported. We find the growth of quantum dots induces defects not only near the quantum dot but also extended to quite a distance toward the growth direction. In Schottky diode structure, comparing with the reference sample without the quantum dot layer, the current dependence of the low frequency noise spectral density indicated that the noise is from the generated interface states with the density increasing towards the band tail. Also the crystal quality of the Schottky diode including the quantum dot layer, deduced from the Hooge parameter, was slightly worse than that of the reference sample. For n-i-n diode structure, the current–voltage relation was linear, and a quadratic current dependence of the noise spectral density was observed. The Hooge parameter for the n-i-n structure was determined to be on the order of unity indicating the general degradation of the structure.     

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Experimental Hall data that were carried out as a function of temperature (60–350 K) and magnetic field (0–1.4 T) were presented for Si-doped low Al content (x=0.14) n–Al_xGa_1−xAs/GaAs heterostructures that were grown by molecular beam epitaxy (MBE). A 2-dimensional electron gas (2DEG) conduction channel and a bulk conduction channel were founded after implementing quantitative mobility spectrum analysis (QMSA) on the magnetic field dependent Hall data. An important decrease in 2DEG carrier density was observed with increasing temperature. The relationship between the bulk carriers and 2DEG carriers was investigated with 1D self consistent Schrödinger–Poisson simulations. The decrement in the 2DEG carrier density was related to the DX-center carrier trapping. With the simulation data that are not included in the effects of DX-centers, 17 meV of effective barrier height between AlGaAs/GaAs layers was found for high temperatures (T>300 K). With the QMSA extracted values that are influenced by DX-centers, 166 meV of the DX-center activation energy value were founded at the same temperatures.     

Electrical conductivity and photoconductivity of single crystals of lithium hydride

Nonactivated LiH crystals and crystals of LiH with Mg, In, Tl, Sn, Sb, and Bi impurities are investigated. Photoconductivity is found in luminescent crystals. The temperature dependence of the electrical conductivity and photoconductivity in the temperature range of 100–570 ° K is measured. Volt-ampere characteristics of the dark current and photocurrent in fields up to 10⁴ V/cm at various temperatures are obtained. Data is presented on the inertia of the photocurrent and its dependence on the intensity of the exciting light. Conclusions are drawn concerning some connection of LiH photoconductivity with the type of activating impurity, the absence of a connection with the brightness of the luminescence, and the specific role of photoconductivity in color centers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 10, pp. 94–98, October, 1971.     

Investigation of ruthenium Schottky contacts to n-GaAs

Ruthenium was evaporated on n-GaAs to form Schottky contacts. Initial electrical measurements revealed a near ideal Schottky behaviour with low leakage currents. The Schottky diodes exhibit good stability upon thermal aging at elevated temperatures up to 300° C. However, the diode parameters rapidly deteriorate after aging at temperatures in excess of 400° C. The room temperature (300 K) median life of the diodes, based on a failure criterion of a tenfold increase in the diode saturation current, J _riv ^s , from reverse bias current-voltage (I–V) data, was of the order of 10⁴ h.     

Huang–Rhys side-bands in the emission line of a single InAs quantum dot

We report the first direct observation of Huang–Rhys side-bands in the photoluminescence spectrum of a single InAs/GaAs quantum dot (QD). At low temperature (10 K) the single QD spectrum has a quasi-Lorentzian profile. At higher temperatures, we observe a strong deviation from a Lorentzian profile with the appearance of asymmetric side-bands which become symmetric above 70 K. We obtain an excellent agreement with theoretical calculations done in the framework of the Huang–Rhys formalism. We conclude that the zero-phonon linewidth is the relevant parameter for the observation of the low-energy acoustic phonon side-bands.     

Modeling and experimental study of 780–808-nm AlGaAs/GaAs injection lasers with electron superlattice barriers

Electron superlattice barriers (ESBs) were used in AlGaAs/GaAs injection lasers to improve the electron confinement of the active layer by Bragg reflection of electron waves. The design of a separate-confinement heterostructure (SCH) laser with ESBs operating at 780–808 nm was optimized. Conventional SCH and SCH-ESB were prepared by low-pressure MOCVD epitaxy. Oxide stripe lasers with stripe widths of 100 and 200µm were prepared. The threshold current density of 0.3 kA/cm² and the characteristic temperature constantT ₀=220 K were measured at a wavelength of 808 nm for SCH-ESB lasers with an active-layer thickness of 40 nm and a resonator length of 0.4–0.5 mm. For conventional SCH lasers with the same geometry, a threshold current density of 0.42 kA/cm² andT ₀=160 K were obtained. Experimental results on the low-temperature photoluminescence characterizing ESB regions are presented and are compared with the calculated miniband energy spectrum of the superlattice structure. The leakage currents for ordinary SCH and SCH-ESB lasers were analyzed. Experimental verification of a reduction in the leakage current for SCH-ESB lasers was obtained.     

180–425 GHz low noise SIS waveguide receivers employing tuned Nb/AIOx/Nb tunnel junctions

We report recent results on a 20% reduced height 270–425 GHz SIS waveguide receiver employing a 0.49 µm² Nb/AlO _x /Nb tunnel junction. A 50% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner reduced height waveguide mixer block. The junction uses an end-loaded tuning stub with two quarter-wave transformer sections. We demonstrate that the receiver can be tuned to give 0–2 dB of conversion gain and 50–80% quantum efficiency over parts of it's operating range. The measured instantaneous bandwidth of the receiver is 25 GHz which ensures virtually perfect double sideband mixer response. Best noise temperatures are typically obtained with a mixer conversion loss of 0.5 to 1.5 dB giving uncorrected receiver and mixer noise temperatures of 50K and 42K respectively at 300 and 400 GHz. The measured double sideband receiver noise temperature is less than 100K from 270 GHz to 425 GHz with a best value of 48K at 376 GHz, within a factor of five of the quantum limit. The 270–425 GHz receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii. Preliminary tests of a similar junction design in a full height 230 GHz mixer block indicate large conversion gain and receiver noise temperatures below 50K DSB from 200–300 GHz. Best operation is again achieved with the mixer tuned for 0.5–1.5 dB conversion loss which at 258 GHz resulted in receiver and mixer noise temperature of 34K and 27K respectively.     

Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures

The growth of high-quality stacked quantum dot (QD) structures represents one of the key challenges for future device applications. Electronic coupling between QDs requires closely separated electronic levels and thin barrier layers, requiring near identical composition and shape, despite strong strain interactions. This paper presents a detailed characterization study of stacked InGaAs QD and InAs/InGaAs dot-in-well (DWELL) structures using cross-sectional transmission electron microscopy. For In_.5Ga_.5As/GaAs QD structures we have observed optimized stacking using a barrier thickness 12 nm.We also report studies of stacking in DWELL laser structures. Despite reports of very low threshold currents in such lasers, designed for 1.3 μm emission, performance is limited by gain saturation and thermal excitation effects. We have explored solutions to these problems by stacking multiple DWELL layers of three, five and 10 repeats. Initial attempts at stacked multilayer structures, particularly samples with a large number of repeats, produced variable results, with a number of the final devices characterized by poor emission and electrical characteristics. Analysis by transmission electron microscopy has identified the presence of large defective regions arising from the complex interaction of dots on several planes and propagating threading dislocations into the cladding layers. The origin of this defect is identified as the coalescence of QDs at very high density and the resulting dislocation propagating to higher dot planes. An effective modified method to reduce the defect density by growing the barrier layer at higher temperature will be discussed. Finally, we report the growth of a stacked 10-layer structure using relatively thin barriers, grown using this technique.     

Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.     

Burst noise in non-heated thin film metal-insulator-metal cathodes

In this paper we present the results of experimental and theoretical studies of the noise characteristics of through and emission currents of thin-film metal-insulator-metal systems based on silicon oxynitride in the temperature range from 4.2 to 300 K and at frequencies at 20 Hz–100 kHz. The noise spectrum of the through current consists of burst and shot noise. In the noise spectrum of the emission current flicker noise and shot noise components predominate. The noise of the through current is not correlated with the noise of the emission current over the full range of investigated temperatures and frequencies. A proposed physical model of the origin of the burst noise in an MIM cathode is based on the assumption of the existence of two types of high conductivity channels in the dielectric: pulsating and nonpulsating. Experimental results are found to be in good agreement with the theoretical calculations.Lenin Komsomol Pedagogical Institute, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 89–94, November, 1992.     

Electrical properties of metal-vanadium-borate glass-gallium arsenide structures

The results of a study of the electrical properties of MIS structures based on n-type GaAs are presented. The static current-voltage characteristics and the dependences of the capacitance and active conductance on the voltage on the MIS structure in the frequency range of the test signal from 22 to 10⁵ Hz at room temperature and in the temperature range 295–367 K at a frequency of 10³ Hz are analyzed in detail. A method is proposed for determining the total density of surface states N_ts, which determine the position of the Fermi energy on the semiconductor surface for MIS structures with large N_ts.V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 11, pp. 99–108, November, 1992.