3D photon counting imaging at 1550 nm with 1.5-GHz sine-wave-gated InGaAs/InP GAPD

We demonstrated a 3D laser imaging system at 1550 nm with a 1.5-GHz sine-wave gated Geiger-mode InGaAs/InP avalanche photodiode (APD). An optical fiber bundle with 100 individual fiber outputs was implemented at the focal plane of the telescope, providing a 2.5-mrad imaging view. The system used single-pixel near-infrared single-photon detector to measure photons at fiber outputs instead of a photon counting array. The 1.5-GHz gated Geiger-mode InGaAs/InP APD with a timing jitter of 290 ps was operated in quasi-continuous mode with detection efficiency of ∼4.3%. We achieved higher than 6-cm surface-to-surface resolution at single-photon level, showing a potential of low-energy and eye-safe laser imaging system for long-distance measurements.     

Photon-counting laser ranging with InGaAs/InP avalanche photodiode in the passively quenched and 1-GHz sinusoidally gated

We experimentally studied photon-counting laser ranging at 1550 nm using InGaAs/InP avalanche photodiode based single-photon detectors (SPDs). The SPDs operated in the passive quenching and 1-GHz sinusoidal gating Geiger modes, corresponding to continuous and quasi-continuous photon-counting ranging, respectively. Despite that the passively quenched SPD provided relatively high effective detection efficiency, quasi-continuous photon-counting ranging excelled the continuous one with fast acquisition speed and improved depth resolution due to the short deadtime and low timing jitter of the SPD in 1-GHz sinusoidally gated mode.     

二维圆盘颗粒体系声学行为的数值研究

数值测量了卸载过程中二维单分散圆盘颗粒系统的横波、纵波声速、声衰减系数、非线性系数随压强的变化以及声衰减系数随频率的变化.结果表明,二维(2D)圆盘颗粒体系的横波、纵波声速均随压强呈分段幂律标度:当压强P10~(-4)时,横波、纵波声速随压强的增大而减小;当P10~(-4)时,有v_t~P~(0.202),v_l~P~(0.338).进一步得到其剪切模量和体积模量的比值G/B也随压强呈幂律标度,G/B~P~(-0.502),暗示在低压强下,与三维(3D)球形颗粒体系类似,2D圆盘颗粒体系也处于L玻璃态.水平激励和垂直激励下2D圆盘颗粒系统的衰减系数随频率变化也呈现分段行为:当频率f0.05时,衰减系数不随f变化;当f0.05时,横波纵波的衰减系数α~f;当f0.35时,横波衰减系数α_T~f~2,纵波衰减系数α_L~f~(1.5).此外,竖直水平激励下的2D圆盘颗粒系统的非线性系数和衰减系数随压强也呈现与声速类似的分段规律:当P10~(-4)时,横波非线性系数β_T~P~(-0.230),其余都不随压强变化.当P10~(-4)时,两者均随压强增大呈幂律减小:β_T~P~(-0.703),β_L~P~(-0.684),α_T~P~(-0.099),α_L~P~(-0.105).进而得到2D圆盘颗粒系统中散射相关的特征长度?~*随压强呈幂律标度,当P10~(-4)时,?~*~P~(-0.595);当P10~(-4)时,?~*~P~(0.236).     

Pile-up correction in characterizing single-photon avalanche diodes of high dark count rate

Although as a single-photon detector, the single-photon avalanche diode (SPAD) may be applied to multi-photon conditions. At a minimum, SPADs with a high dark count rate (DCR) demand a higher value of photon number per pulse to improve the signal-to-noise ratio. In this case, and without correction, severe pile-up distortion may induce a system error in the measurement of photon detection efficiency (PDE) and timing jitter. In this paper, we study the pile-up distortion in SPAD characterization by numerical simulation and experimentation, and introduce a pile-up correction method for the precise characterization of PDE and timing jitter in immature SPADs with an unintentionally high DCR. The results of this study are useful in the development of future SPADs.     

InGaAs单光子探测器传感检测与淬灭方式

针对InGaAs单光子雪崩光电二极管(SPAD)的光电感应特性,研究了基于门控主动式淬灭的SPAD动态偏置控制和电路实现的策略.采用门控主动淬灭控制可降低淬灭时间,有效抑制暗计数和后脉冲效应.接口感应检测电路采用标准互补金属氧化物半导体(CMOS)工艺进行制造,而SPAD则采用非标准CMOS工艺.利用铟柱互连混合封装工艺实现SPAD与感应接口电路的协同工作.在低温-30?C的条件下,实现了SPAD光触发雪崩电流信号的提取和快速淬灭.研究了感应电阻和临界检测电压对传感检测电性能的影响,并采用简单电路结构实现状态检测,实测得到的SPAD恢复时间、传输延时分别为575,563 ps,淬灭时间为1.88 ns,满足纳秒级精度传感检测应用的需要.     

Modulation of absorption manner in helicon discharges by changing profile of low axial magnetic field

The modulation of absorption manner in helicon discharge by changing the profile of low axial magnetic field is explored experimentally in this work. The experiments are carried out in Boswell-type antenna driven by 13.56-MHz power source in 0.35-Pa argon environment. The peak of the external non-uniform magnetic field(B_(ex)) along the axis is observed in a range from 0 Gs to 250 Gs(1 Gs = 10~(-4) T), where the electron density varies from 0.5×10~(16) m~(-3) to 9×10~(16) m~(-3).When Bex is located near the tube upper end sealed by a dielectric plate, or near the tube bottom end connected with a diffusion chamber, the plasmas are centralized in the tube in the former case while the strong luminance appears between the edge of the tube and the axial line in the latter case. When Bex is located in the middle of the antenna, moreover, an effective resistance(R_(eff)) peak appears apparently with increasing magnetic field. The glow moves toward first the edge of the tube and then the two antenna legs as the magnetic field increases. The discharge in this case is caused by the absorption of Trivelpiece–Gould(TG) wave. It is suggested that B_(ex) is located in the middle of the antenna to obtain a higher efficiency of power transfer.     

Effect of substrate bias on SE, XPS and XAES studies of diamond-like carbon films deposited by saddle field fast atom beam source

This paper reports the effect of positive substrate bias (V_s) varying from 0 to 180 V on the spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS) and X-ray Auger electron spectroscopy (XAES) studies of diamond-like carbon (DLC) films deposited using CH₄ gas as a feedstock into a saddle field fast atom beam (FAB) source. The values of optical constants like refractive index (n) and extinction coefficient (k) of the deposited DLC films were determined using a two phase model. The values of ‘n’ were found to fall in the range from 1.505 to 1.720 and ‘k’ from 0.03 to 0.125 by application of different values of V_s. Value of these optical constants were found to decrease with the increase of substrate bias up to 90 V and then increase beyond this value. Position of C 1s peak evaluated from XPS data was found to occur at 286.09±0.18 eV in DLC films deposited by application of different values of V_s. Observation of full width at half maximum (FWHM) (τ) value (1.928 eV at V_s=0 V, 2.0 eV at V_s=90 V and 1.89 eV at V_s=180 V) clearly hinted the existence of a point of inflection in the properties of DLC films deposited using FAB source this way. A parameter ‘D’ defined as the distance between the maximum of positive going excursion and the minimum of negative going excursion was calculated in the derivative XAES spectra. The values of ‘D’ evaluated from XAES data for DLC films were found to be 14.8, 14.5 and 15.2 at V_s=0, 90 and 180 V, respectively. The sp² percentage was calculated for samples deposited this way and was found to be low and lie approximately at 5.6, 2.8, 2.3, 5.7 and 11.5 for different values of V_s=0, 50, 90, 150 and 180 V. The sp³ content percentage and sp³/sp² ratio was found to be 94.4 and 16.7, 97.7 and 42.5 at V_s=0 and 90 V, respectively. Beyond V_s=90 V these values started decreasing. Mainly, a point of inflection in all the properties of DLC films studied over here at around 90 V of applied substrate bias has been observed, which has been explained on the basis of existing theories in the literature.     

Laser depth measurement based on time-correlated single-photon counting

A method for acquiring range data based on time-correlated single-photon counting is described. This method uses a short-pulse ( approximately 10-ps) laser diode, a detector based on a silicon single-photon avalanche diode, and standard photon-counting timing electronics. The accuracy of the technique has been measured as approximately +/-30 microm in a laboratory experiment and corresponds closely to the results of a theoretical simulation.     

Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure

The threshold voltage (V_th) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ_1,p, polarization charge density σ_b, and equivalent unite capacitance C_oc. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_th, and threshold voltage |V_th| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |V_th|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10¹⁶ cm^-3 at V_GS = -12 V and V_DS = -10 V.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

Active species in microwave postdischarge for steel-surfacenitriding

Production of nitrogen atoms has been studied in a 2.45-GHz flowing postdischarge in N₂ and N₂-H₂ gas mixtures with Ar as a buffer gas in the high-pressure regime (5×10³ to 6.5×10⁴ Pa). N atom densities have been measured by NO titration in the 10¹⁴-10 ¹⁵ cm³ range and monitored by the first positive emission resulting from the N atom recombination. The rate coefficient of the N+N+N₂ recombination has been found to be _k=6×10^-33 cm⁶ atom^-2 s ^-1 at T₀=300 K, which agrees with previously published data. The N atom production (or degree of N/N₂ dissociation) in front of an Fe-0.1%C substrate correlates well with the thickness of a γ' Fe₄N layer produced by the postdischarge treatment. The H₂ gas was first introduced in the initial phase of treatment to remove surface oxidizing and then was cut off to keep high densities of N atoms. It is deduced that N atoms are more active nitriding species than NH-type radicals     

Measurement of bulk etch rate of LR115 detector with atomic force microscopy

Equations for calculating track parameters have been proposed, which invariably involve the track etch rate V_t and the bulk etch rate V_b. The present study measured V_b for the LR115 solid-state nuclear track detector using atomic force microscopy (AFM). The detectors were partially masked using rubber cement and then etched in 2.5 N NaOH solution at 60°C for time periods ranging from 5 to 40 min. The rubber cement was then peeled off and cross-sectional images of the LR115 detectors were obtained by AFM. V_b has been found to have different values below and beyond the etching time of about 13.5 min, with the values of 0.0555 and 0.0875 μm min⁻¹, respectively. The increase in V_b with the etching time can be explained by a diffusion-etch model, in which the additional damage of the detector material is due to those etchant ions diffused into the detector over time. Now that V_b has been determined, this can be combined with the track etch rate V_t to calculate track parameters.     

Development of highly integrated RSFQ circuits on the basis of intrinsically shunted Josephson junctions

At PTB, for application in rapid single flux quantum (RSFQ) and voltage standard circuits, the development of highly integrated SDE circuits is focused on devices based on intrinsically shunted Josephson junctions in the SINIS and SNS technologies. In SINIS technology, the fabrication process has been optimized to values of the critical current density of j_C=500 A/cm² and the characteristic voltage of V_C=190 μV. To raise the circuit integration level, successive steps of development are shown by the example of the layout of an elementary RSFQ cell designed for higher values of j_C. In SNS technology, a fabrication process has been developed to produce small ramp-type junctions with contact areas smaller than 0.4 μm² and with values for j_C and V_C of about j_C=200 kA/cm² and V_C=20 μV. The design allows the SNS junction size to be further reduced down to the deep sub-micron range.     

Optical nonlinearities of tetracarbonyl-chromium triphenyl phosphine complex

The new tetracarbonyl — chromium-triphenyl phosphine complex was synthesized and characterized using ultraviolet(UV)-visible,Fourier transform infrared(FTIR),and nuclear magnetic resonance(NMR) techniques.The characterization results confirm the molecular structure of the new complex.The z-scan measurements were done by diode laser[continuous wave(CW)]to estimate the nonlinear optical parameter(X~3).The results led to calculate three parameters:the groundstate cross sections(σ_g),the excited-state cross sections(σ_(ex)),and thermo-optic coefficient of the new complex.This study indicated that our complex is a suitable for photonic applications.     

单光子探测器雪崩光电二极管的低温控制系统及其温度特性

根据单光子探测系统的要求及其特点,采用半导体制冷技术,研制出了用于单光子探测的雪崩光电二极管(APD)的水循环散热制冷腔。通过配备测量精度为0.1℃的温控仪,降低了APD的工作环境温度。通过实验探讨了APD的温度特性,得到了APD的雪崩电压、暗电流、光电流、等效噪声功率与温度的关系。结果表明:降低APD的工作温度有利于减小APD的等效噪声功率,APD存在最佳工作温度。     

Tunneling in submicron CMOS single-photon avalanche diodes

Tunneling is studied in two main single-photon avalanche diode （SPAD） topologies, which are r~-tub guard ring （NTGR） and p-tub guard ring （PTGR）. Device sinmlation, I - V measurements, and dark count calculations and measurements demonstrate that tunneling is the main source of noise in NTGR, but it is less dominant in PTGR SPADs. All structures are characterized with respect to dark noise, photon detection probability, tinting jitter, afterpulsing probability, and breakdown voltage. Noise performmme is disturbed because of tunneling, whereas jitter performance is disturbed because of the short diffusion time of photo-generated minority carriers in NTGR SPADs. The maximum photon detection probability is enhanced because of an improvement in absorption thickness.     

Gate-controlled magnetic transitions in Fe_3GeTe_2 with lithium ion conducting glass substrate

Since the discovery of magnetism in two dimensions,effective manipulation of magnetism in van der Waals magnets has always been a crucial goal.Ionic gating is a promising method for such manipulation,yet devices gated with conventional ionic liquid may have some restrictions in applications due to the liquid nature of the gate dielectric.Lithium-ion conducting glass-ceramics(LICGC),a solid Li~+ electrolyte,could be used as a substrate while simultaneously acts as a promising substitute for ionic liquid.Here we demonstrate that the ferromagnetism of Fe_3 GeTe_2(FGT) could be modulated via LICGC.By applying a voltage between FGT and the back side of LICGC substrate,Li~+ doping occurs and causes the decrease of the coercive field(H_c) and ferromagnetic transition temperature(T_c) in FGT nanoflakes.A modulation efficiency for of up to ～ 24.6% under V_g=3.5 V at T=100 K is achieved.Our results provide another method to construct electrically-controlled magnetoelectronics,with potential applications in future information technology.     

First-principles calculations of thermodynamic properties of TiB2 at high pressure

The equations of state (EOS) and other thermodynamic properties of TiB₂ are investigated using ab initio plane-wave pseudopotential density functional theory method. The obtained results are in good agreement with the experimental measured data and other theoretical calculated ones. Through the quasi-harmonic Debye model, in which the phononic effects are considered, the dependences of relative volume V/V₀ on pressure P, cell volume V on temperature T, and Debye temperature Θ and specific heat C_V on pressure P are successfully obtained.     

Complete single-photon counting and timing module in a microchip

A complete module for single-photon counting and timing is demonstrated in a single chip. Features comparable with or better than commercially available macroscopic modules are obtained by integration of an active-quenching and active-reset circuit in complementary metal-oxide semiconductor technology together with a single-photon avalanche diode (SPAD). The integrated SPAD has a 12-microm-diameter sensitive area and operates with an overvoltage above breakdown adjustable up to 20 V. With a 5-V overvoltage the photon detection efficiency peaks above 40% around 500 nm, and the dark-counting rate is lower than 600 counts/s at room temperature. The overall counting dead time is 33 ns.     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.