In this paper, room temperature PL spectra of InAs self-assembled dots grown on GaAs/InP and InP substrate are presented. For analyzing different positions of the PL peaks, we examine the strain tensor in these quantum dots (QDs) using a valence force field model, and use a five-band k·p formalism to find the electronic spectra. We find that the GaAs tensile-stained layer affects the position of room temperature PL peak. The redshift of PL peak of InAs/GaAs/InP QDs compared to that of InAs/InP QDs is explained theoretically. 相似文献
A fabrication method for a matrix pattern of laterally separated silicon quantum rods was developed, consisting of a three‐step recipe utilizing electron beam lithography (EBL), reactive ion etching (RIE), and oxidation. Photoluminescence (PL) measurements – images, spectra, and blinking – verified that the presented method results in a high number of luminescing single silicon quantum rods in well defined positions on the sample. These are suitable for single dot spectroscopy and repeatable measurements, even using different measurement methods and instruments.
We report the investigation on the oxidation behaviour of Si_{1-x}Ge_x alloys (x=0.05, 0.15, and 0.25). It was found for the first time that a nanocap (thickness: 1.6－2.0nm) was formed on the oxide film after fast oxidation. Some new peaks in photoluminescence spectra were discovered, which could be related to the Ge nanocap, the Ge nanolayer (thickness: 0.8－1.2nm) and the Ge nanoparticles (with various diameters from 2.6nm to 7.4nm), respectively. A suitable model and several new calculating formulae combined with the Unrestricted Hartree－Fock－Roothaan (UHFR) method and quantum confinement analysis have been proposed to interpret the PL spectra and the nanostructure mechanism in the oxide and Ge segregation. 相似文献
A scheme for active temporal‐to‐spatial demultiplexing of single photons generated by a solid‐state source is introduced. The scheme scales quasi‐polynomially with photon number, providing a viable technological path for routing n photons in the one temporal stream from a single emitter to n different spatial modes. Active demultiplexing is demonstrated using a state‐of‐the‐art photon source—a quantum‐dot deterministically coupled to a micropillar cavity—and a custom‐built demultiplexer—a network of electro‐optically reconfigurable waveguides monolithically integrated in a lithium niobate chip. The measured demultiplexer performance can enable a six‐photon rate three orders of magnitude higher than the equivalent heralded SPDC source, providing a platform for intermediate quantum computation protocols.
The spectra of a two-electron quantum dot in a magnetic field of arbitrary strength is obtained by using the shifted 1/Nexpansion method. The level ordering as well as the transitions in the angular momenta of the quantum dot are studied. The dependence of the electron absorption spectra on the applied magnetic field is also calculated. Comparisons show that our results are in good agreement with the exact ones. 相似文献
We study theoretically the full counting statistics of electron transport through a quantum dot weakly coupled to two ferromagnetic leads, in which an effective nuclear-spin magnetic field originating from the configuration of nuclear spins is considered. We demonstrate that the quantum coherence between the two singly-occupied eigenstates and the spin polarization of two ferromagnetic leads play an important role in the formation of super-Poissonian noise. In particular, the orientation and magnitude of the effective field have a significant influence on the variations of the values of high-order cumulants, and the variations of the skewness and kurtosis values are more sensitive to the orientation and magnitude of the effective field than the shot noise. Thus, the high-order cumulants of transport current can be used to qualitatively extract information on the orientation and magnitude of the effective nuclear-spin magnetic field in a single quantum dot. 相似文献
This article deals with the strain distributions around GaN/AlN
quantum dots by using the finite element method. Special attention
is paid to the influence of Al0.2Ga0.8N strain-reducing
layer on strain distribution and electronic structure. The numerical
results show that the horizontal and the vertical strain components
are reinforced in the GaN quantum dot due to the presence of the
strain-reducing layer, but the hydrostatic strain in the quantum dot
is not influenced. According to the deformation potential theory, we
study the band edge modifications and the piezoelectric effects.
The result demonstrates that with the increase of the strain reducing layer,
the transition energy between the ground state electron and the heavy hole
increases. This result is consistent with the emission wavelength
blue shift phenomenon observed in the experiment and confirms that the
wavelength shifts toward the short wavelength range is realizable by
adjusting the structure-dependent parameters of GaN/AlN quantum dot. 相似文献
We have demonstrated that Si single‐electron SOI‐MOSFETs with multidots channel have attractive new functions such as single‐photon detection. Multidots formed by nanoscale selective oxidation of thin SOI layer have been used for photon detection. Most recently, we have investigated photon detection capabilities of FETs having phosphorus (P)‐doped channel. In such P‐doped FETs, each P donor works as a quantum dot for electrons and single‐electron transport is achieved by tunnelling through donor potentials. Using such P‐doped FETs, single‐photon detection has been demonstrated. Furthermore, in order to directly observe the spatial landscape of even a single‐dopant potential, we have developed low‐temperature‐Kelvin probe force microscopy (LT‐KFM) and succeeded in detecting a single‐dopant potential in the channel region. In this paper, we present results of photon‐induced random telegraph signals in crystalline‐dot‐type and donor‐dot‐type multidot single‐electron SOI‐MOSFETs, and direct observation of a single‐dopant potential by LT‐KFM. 相似文献
下载免费PDF全文