Monte Carlo simulation of the effect of atomic diagonal transition on cluster diffusion

The effect of atomic diagonal transition on the cluster diffusion and its size dependence is simulated by kinetic Monte Carlo method. The thresholds of atomic diagonal transition barriers E_{dt} are found to be 0.2eV and 0.4eV, corresponding to with and without evaporation and condensation mechanism, respectively. The results indicate that the cluster diffusion is controlled primarily by the atomic diagonal transition, and the cluster diffusion coefficient D decreases drastically with increasing E_d when E_dE_{dt}, and the relationship between D and N changes into D∝N^{-1.08±0.027}.     

Monte Carlo simulation of ramified aggregates onhetero-substrates

We have studied the aggregation of particles on a hetero-substrate consisting of two different substrates A and B with finite surface barriers E_AB and E_BA between the AB and BA boundaries, respectively. With the diffusion energy limited aggregation (DELA) model, we find that the number of clusters and the mean radius of gyration of the clusters are dependent on the surface barriers E_AB and E_BA. For the case with a constant of E_BA, a series of minima are summarized as E_AB= (E₀- k_BAE_BA)/ k_AB with k_AB and k_BA being two integers, for main minima (k_BA=k_AB- 1) and two local minima (k_BA=k_AB and k_BA=k_AB + 1) between two neighbouring main minima.     

热辐射输运问题的高效蒙特卡罗模拟方法

惯性约束聚变研究中,热辐射光子在介质中的输运以及热辐射光子与介质的相互作用是重要研究课题,蒙特卡罗方法是该类问题的重要研究手段之一.隐式蒙特卡罗方法虽然能正确地模拟热辐射在介质中的输运过程,但当模拟重介质(材料的吸收系数大)问题时,该方法花费的计算时间将变得很长,导致模拟效率很低.本文以离散扩散蒙特卡罗方法为基础,开发了"离散扩散蒙特卡罗方法辐射输运模拟程序",可以较好地解决重介质区的计算效率问题,但是离散扩散蒙卡罗方法在模拟轻介质区时精度不够高.辐射输运问题中通常既有轻介质也有重介质,为了能同时解决蒙特卡罗方法模拟的效率和精度问题,本文研究了离散扩散蒙特卡罗方法与隐式蒙特卡罗方法相结合的模拟方法,并提出了新的扩散区与输运区界面处理方法,研制了混合蒙特卡罗方法的辐射输运模拟程序.典型辐射输运问题模拟显示:在模拟重介质问题时,该程序能大幅缩短模拟时间,且能取得与隐式蒙特卡罗方法一致的结果;在模拟轻重介质均存在的问题时,与隐式蒙特卡罗方法相比,混合蒙特卡罗方法的模拟精度与其相当且计算效率同样能够得到显著提升.     

邻晶面外延生长机制的动力学Monte Carlo模拟

用动力学Monte Carlo模拟方法研究了GaAs(001)邻晶面的外延生长机制.Ehrlich-Schwoebel势垒对邻晶面外延机制有重要的影响.模拟结果显示，低温下Ehrlich-Schwoebel势垒几乎能完全阻止原子向下一台阶面的迁移，高温下原子已能有效地克服势垒的影响并向下一台阶面迁移.在外延生长初期，原子几乎在台阶面上均匀分布.当表面覆盖度达到一定数量后，台阶成核开始.而由于Ehrlich-Schwoebel势垒的存在，在台阶的上侧台阶面上开始有原子的积累，而如果没有Ehrlich-Schwoebel势垒，台阶上侧台阶面上的原子也能被有效地耗尽.Ehrlich-Schwoebel势垒对邻晶面上的外延生长模式有显著的影响，将明显提高达到台阶生长模式的温度. 关键词： 外延生长模式 动力学Monte Carlo Ehrlich-Schwoebel势垒     

非均质基底表面上团簇生长的Monte Carlo模拟

Monte Carlo方法模拟了在非均质基底表面上团簇的生长过程.非均质基底由规则分布的A，B两类不同性质的物质(不同材料、不同温度等)组成.沉积粒子的初动能为E₀，在不同相基底上单位长度扩散的能耗为E_A,E_B，粒子从A经过相界扩散到B的能耗为E_AB.模拟中粒子的初动能E₀.远大于E_A,E_B，粒子从B过相界到A能耗E_BA取为0.结果表明，沉积在此类基底表面的粒子凝聚成具有分形结构的团簇.当E_AB远大于E_A,E_B时，团簇的数目、团簇的回旋半径、团簇的分形维数均随E₀/E_AB呈周期性变化. 关键词： 分形团簇 非均质基底 Monte Carlo模拟 周期性     

Kinetic Monte Carlo simulation of thin film growth

A three-dimensional kinetic Monte Carlo technique has been developed for simulating growth of thin Cu films. The model involves incident atom attachment, diffusion of the atoms on the growing surface, and detachment of the atoms from the growing surface. The related effect by surface atom diffusion was taken into account. A great improvement was made on calculation of the activation energy for atom diffusion based on a reasonable assumtion of interaction potential between atoms. The surface roughness and the relative density of the films were simulated as the functions of growth substrate temperature and film thickness. The results showed that there exists an optimum growth temperatureT _opt at a given deposition rate. When the substrate temperature approaches toT _opt, the growing surface becomes smoothing and the relative density of the films increases. The surface roughness minimizes and the relative density saturates atT _opt. The surface roughness increases with an increment of substrate, temperature when the temperature is higher thanT _opt.T _opt is a function of the deposition rate and the influence of the deposition rate on the surface roughness depends on the substrate temperatures. The simulation results also showed that the relative density decreases with the increasing of the deposition rate and the average thickness of the film.     

Monte carlo simulation of magnetization and coercivity of free magnetic clusters

Based on Monte Carlo method, the oscillatory behaviour of the average magnetic moment as a function of the cluster sizes and the temperature dependences of magnetic moment with different sizes have been studied. It is found that the oscillations superimposed on the decreasing moment are associated with not only the geometrical structure effects but also the thermal fluctuation. The hystereses and thermal coercivities for free clusters with zero and finite uniaxial anisotropies have been calculated. The simulated thermal dependence of the coercivity is consistent with the experimental result, but does not fit the T^α law in the whole temperature range. It is evident that an easy magnetization direction and an anisotropy resulting from the spin configurations exist in the free clusters with the pure exchange interaction, which is also proved by the natural angle and energy distribution of clusters. A systematic theoretical analysis is also made to establish the relationship between natural angle and coercivity.     

磁控溅射气体团簇源中团簇形成的DSMC研究

利用直接模拟蒙特卡洛方法(DSMC) ,模拟了磁控溅射气体团簇源中Cu+ (Cu-)的含量比例不同的条件下,Cu团簇的尺寸分布。模拟结果表明：随着含量比例的增加,团簇的尺寸分布变窄了,不带电的团簇的比例增加,不带电的铜团簇分布的最大值减小,相应的带正电荷和带负电荷团簇的比例减小;相同的含量比例下,带正电的团簇的尺寸分布与带负电荷的团簇的尺寸分布基本相同;初始Cu- 比Cu+ 的含量比例大时,输出的主要是带负电荷的团簇,带正电荷和不带电的团簇占很小的比例;Cu-含量比例的增加,负Cu团簇的尺寸分布减小。     

磁控溅射气体团簇源中团簇形成的DSMC研究

利用直接模拟蒙特卡洛方法(DSMC) ,模拟了磁控溅射气体团簇源中Cu+ (Cu-)的含量比例不同的条件下,Cu团簇的尺寸分布。模拟结果表明：随着含量比例的增加,团簇的尺寸分布变窄了,不带电的团簇的比例增加,不带电的铜团簇分布的最大值减小,相应的带正电荷和带负电荷团簇的比例减小;相同的含量比例下,带正电的团簇的尺寸分布与带负电荷的团簇的尺寸分布基本相同;初始Cu- 比Cu+ 的含量比例大时,输出的主要是带负电荷的团簇,带正电荷和不带电的团簇占很小的比例;Cu-含量比例的增加,负Cu团簇的尺寸分布减小。     

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.     

Fully parallel code for Monte Carlo simulation

We present a fully parallel version of Monte Carlo simulation of the Ising model using the Metropolis algorithm. In the 3-dimensional version the performance can be enhanced by a factor >20 in 16-bit word processors relative to other multispin codes. This factor could be further increased if implemented in 64-bit word computers.     

Dendrimer-magnetic nanostructure: a Monte Carlo simulation

In this paper, the magnetic properties of ternary mixed spins (σ,S,q) Ising model on a dendrimer nanostructure are studied using Monte Carlo simulations. The ground state phase diagrams of dendrimer nanostructure with ternary mixed spins σ = 1/2, S = 1 and q = 3/2 Ising model are found. The variation of the thermal total and partial magnetizations with the different exchange interactions, the external magnetic fields and the crystal fields have been also studied. The reduced critical temperatures have been deduced. The magnetic hysteresis cycles have been discussed. In particular, the corresponding magnetic coercive filed values have been deduced. The multiples hysteresis cycles are found. The dendrimer nanostructure has several applications in the medicine.     

Molecular simulation of chemical reaction equilibria by Kinetic Monte Carlo

ABSTRACT

We describe a new algorithm for the molecular simulation of chemical reaction equilibria, which we call the Reactive Kinetic Monte Carlo (ReKMC) algorithm. It is based on the use of the equilibrium Kinetic Monte Carlo (eKMC) method (Ustinov et al., J. Colloid Interface Sci., 2012, 366, 216–223) to generate configurations in the underlying nonreacting system and to calculate the species chemical potentials at essentially zero marginal computational cost. We consider in detail the typical case of specified temperature, T and pressure, P, but extensions to other thermodynamic constraints are straightforward in principle. In the course of this work, we also demonstrate an alternative method for calculating simulation box volume changes in NPT ensemble simulations to achieve the specified P. We consider two sets of example reacting systems previously considered in the literature, and compare the ReKMC results and computational efficiencies with those of different implementations of the REMC algorithm (Turner et al., Molec. Simulation, 2008, 34, 119–146).     

Monte Carlo法模拟油滴的理论分布

在密立根油滴实验中,应用Monte Carlo法数值地模拟实验室条件下可能的油滴带电量Q、平衡电压U和匀速运动时间t的理论分布,分别从三维分布、时间分布及数量方面比较3种选择油滴的标准,给出较合理的结论.     

Spark-based improved Basin-Hopping Monte Carlo algorithm for structural optimization of alloy clusters

CoPt alloy clusters are promising candidates for catalysts in fuel-cell applications because of their enhanced catalytic performances compared with pure Pt clusters. In this article, an improved Basin-Hopping Monte Carlo (BHMC) algorithm is proposed to optimize the stable structures of CoPt clusters with different sizes and compositions, and the Spark parallel framework is employed to accelerate the structural optimizations. The results show that the improved BHMC algorithm has higher probability to find the lowest-energy structure and more rapid convergence than the traditional BHMC one. Through the comparison of different threads during Spark parallel computing, it is found that the acceleration ratio increases with the thread number while decreases for large cluster due to the limitation of the resource allocation. By investigating the optimized structures of CoPt clusters, it is revealed that for small CoPt clusters, the most stable structures exhibit a wide variety at different Co/Pt ratios; for large CoPt clusters, however, their structures are independent of the Co/Pt ratios and close to the results of their monometallic counterparts. Besides, for all the CoPt clusters, Pt atoms tend to distribute near the surface and Co atoms are generally located in the interior.     

Diffusion and Growth of Metal Clusters in Nanocomposites: A Kinetic Monte Carlo Study

Noble metals that are deposited on a polymer surface exhibit surface diffusion and diffusion into the bulk. At the same time the metal atoms tend to form clusters because their cohesive energy is about two orders of magnitude higher than the cohesive energy of polymers. To selfconsistently simulate these coupled processes, we present in this paper a Kinetic Monte Carlo approach. Using a simple model with diffusion coefficients taken as input parameters allows us to perform a systematic study of the behavior of a large ensemble of metal atoms on a polymer surface eventually leading to polymer nanocomposites. Special emphasis is placed on the cluster growth, cluster size distribution and the penetration of clusters into the substrate. We also study the influence of surface defects and analyze how the properties of the resulting material can be controlled by variation of the deposition rate (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

基于蒙特卡罗方法的中子屏蔽材料设计

基于蒙特卡罗粒子输运程序MCNP,设计了一种强度高、密度低、具有优异中子屏蔽性能的新型玻璃纤维/B4C/环氧树脂复合材料,模拟计算了镅-铍（Am-Be）中子源产生中子对该材料的透射率;研究了该材料的中子屏蔽性能与传统屏蔽材料的差异以及不同B4C质量分数对该材料的屏蔽性能影响;根据模拟结果分析了该材料对不同能区中子（慢中子、中能中子、快中子）具有的不同屏蔽性能。研究发现：B4C质量分数为10%的该种新型玻璃纤维/B4C/环氧树脂复合材料的中子屏蔽性能,尤其是慢中子屏蔽性能较传统的含硼聚乙烯和Al-B4C合金材料更为优异;但随着B4C质量分数的增大,屏蔽性能提升不明显。结果验证了蒙特卡罗方法用于中子屏蔽材料优化设计的可行性。     

求解中子动力学方程的加权蒙特卡罗方法

为了实现基于蒙特卡罗方法的中子动力学计算,在传统的直接蒙特卡罗动力学方法的基础上,提出了一种加权蒙特卡罗动力学方法。该方法通过引入粒子权重的概念,隐式考虑中子俘获反应和裂变反应过程中中子数目的变化,避免了模拟粒子的数目随时间的变化,降低了统计偏差,消除了程序计算过程中粒子的存库操作,提高了计算精度。基于单能点堆模型,开发了中子动力学计算程序NECP-Dandi,进行了大量数值验证与分析,包括无缓发中子、单组缓发中子、六组缓发中子、正阶跃反应性引入、负阶跃反应性引入、正脉冲反应性、负脉冲反应性和正线性反应性引入等情况。数值结果表明,相比于直接蒙特卡罗动力学方法,加权蒙特卡罗动力学方法在计算结果的精度和计算效率上有较为明显的改进,程序结构更为简洁。