Visible and near-infrared optical properties of Nd:CLNGG crystal waveguides formed by proton implantation

A Nd:CLNGG waveguide structure operated at wavelengths of both 632.8 nm and 1539 nm was demonstrated for the first time to our knowledge, which was produced by the 480-keV H~+ion implantation with a dose of 1.0×10~(17)protons/cm~2.Its propagating modes at 632.8 nm and 1539 nm were measured by the well-known prism coupling technique. The refractive index profile at either 632.8-nm wavelength or 1539-nm wavelength was optical barrier type in the proton-implanted Nd:CLNGG crystal optical waveguide, which was calculated by using the reflectivity calculation method. The near-field light intensity distributions were also simulated by the finite-difference beam propagation method in the visible and nearinfrared bands.     

Optical properties of He+-implanted and diamond blade-diced terbium gallium garnet crystal planar and ridge waveguides

Terbium gallium garnet (Tb₃Ga₅O₁₂, TGG) crystal can be used to fabricate various magneto-optical devices due to its optimal Faraday effect. In this work, 400-keV He⁺ ions with a fluence of 6.0×10¹⁶ ions/cm² are irradiated into the TGG crystal for the planar waveguide formation. The precise diamond blade dicing with a rotation speed of 2×10⁴ rpm and a cutting velocity of 0.1 mm/s is performed on the He⁺-implanted TGG planar waveguide for the ridge structure. The dark-mode spectrum of the He⁺-implanted TGG planar waveguide is measured by the prism-coupling method, thereby obtaining the relationship between the reflected light intensity and the effective refractive index. The refractive index profile of the planar waveguide is reconstructed by the reflectivity calculation method. The near-field light intensity distribution of the planar waveguide and the ridge waveguide are recorded by the end-face coupling method. The He⁺-implanted and diamond blade-diced TGG crystal planar and ridge waveguides are promising candidates for integrated magneto-optical devices.     

Optical waveguide in Nd:Bi_(12)SiO_(20) crystal produced by multi-energy C ion implantation

We report the fabrication of a planar waveguide in the Nd:Bi_(12)SiO_(20) crystal by multi-energy C ions at room temperature. The waveguide is annealed at 200℃, 260℃, and 300℃ in succession each for 30 min in an open oven. The effective refractive index profiles at transverse electric(TE) polarization are stable after the annealing treatments. Damage distribution for multi-energy C ion implanted in Nd:Bi_(12)SiO_(20) crystal is calculated by SRIM 2010. The Raman and fluorescence spectra of the Nd:Bi_(12)SiO_(20) crystal are collected by an excitation beam at 633 nm and 473 nm, respectively. The results indicate the stabilization of the optical waveguide in Nd:Bi_(12)SiO_(20) crystal.     

Optical planar waveguides in yb3＋-doped phosphate glasses produced by He＋ ion implantation

Optical planar waveguides in Yb 3+-doped phosphate glasses are fabricated by implanting triple-energy helium ions. The guiding modes and the near-field intensity distribution are measured by using the prism-coupling method and the end-face coupling setup with a He-Ne laser at 633 nm The intensity calculation method (ICM) is used to reconstruct the refractive index profile of the waveguide. The absorption and the fluorescence investigations reveal that the glass bulk features are well preserved in the active volumes of the waveguides, suggesting the fabricated structures for possible applications as waveguide lasers.     

Optical planar waveguides in Yb³⁺-doped phosphate glasses produced by He⁺ ion implantation

Optical planar waveguides in Yb 3+-doped phosphate glasses are fabricated by implanting triple-energy helium ions. The guiding modes and the near-field intensity distribution are measured by using the prism-coupling method and the end-face coupling setup with a He-Ne laser at 633 nm The intensity calculation method (ICM) is used to reconstruct the refractive index profile of the waveguide. The absorption and the fluorescence investigations reveal that the glass bulk features are well preserved in the active volumes of the waveguides, suggesting the fabricated structures for possible applications as waveguide lasers.     

Comparison of 885 nm pumping and 808 nm pumping in Nd:CNGG laser operating at 1061 nm and 935 nm

A Nd:CNGG laser operated at 935 nm and 1061 nm pumped at 885 nm and 808 nm, respectively, is demonstrated. The 885 nm direct pumping scheme shows some advantages over the 808 nm traditional pumping scheme. It includes higher slope efficiency, lower threshold, and better beam quality at high output power. With the direct pumping, the slope efficiency increases by 43% and the threshold decreases by 10% compared with traditional pumping in the Nd:CNGG laser operated at 935 nm. When the Nd:CNGG laser operates at 1061 nm, the direct pumping increases the slope efficiency by 14% with a 20% reduction in the oscillation threshold.     

Planar waveguides in calcium barium niobate fabricated by MeV He ion implantation

A planar optical waveguide was formed in calcium barium niobate (CBN) crystal by 2.8-MeV He-ion implantation with a dose of 1.0×10¹⁶ ions/cm² at room temperature. The prism-coupling method was used to take dark mode measurements at both 633 nm and 1539 nm. The refractive-index profile (n_o and n_e) of the He-implanted CBN waveguide was analyzed with the reflectivity calculation method. The results show that the MeV He implantation results in a decrease in refractive index in barriers for both n_o (4.1%) and n_e (3.1%), but for n_e there is an increase in the waveguide region. The intensity profile of the guide mode and waveguide loss were obtained by end-fire coupling. PACS 42.79.Gn; 61.80.Jh     

Analysis of ion implanted waveguides formed on Nd:YVO4 crystals

This work reports, for the first time to our knowledge, the formation of planar waveguides in Nd:YVO₄ by either carbon or proton implantation. The waveguides are characterised using the dark mode method and by spectroscopic studies, indicating that there is a reduction of the refractive index at the end of the ion track. Particularly, carbon implantation generates a considerable variation in the guiding region. It is shown that the waveguiding structure preserves the spectroscopic properties of the Nd³⁺ ions, thus maintaining the crystal quality.     

Micro‐ and submicrometric waveguiding structures in optical crystals produced by ion beams for photonic applications

Energetic ion beams with diverse energies, species and beam dimensions have been extensively utilized to modify the properties of materials to achieve versatile applications in many aspects of industry, agriculture and scientific research. In optics, the ion‐beam technology has been applied to fabricate various micro‐ and submicrometric guiding structures on a wide range of optical crystals through the efficient modulation of the refractive indices or structuring of the surface, realizing various applications in many branches of photonics. The ion‐beam fabricated optical waveguides and other photonic structures have shown good guiding performance as well as properties related to the materials, suggesting promising potential for many aspects of photonics. This paper gives the state‐of‐the‐art review of fabrication, characterization and application on the ion‐beam‐processed micro‐ and submicrometric photonic structures by highlighting the most recent research progress. A brief prospect is presented by focusing on a few potential spotlights.     

Annealing effect on planar waveguides in LiNbO3 produced by oxygen ion implantation

We reported on planar waveguides in stoichiometric lithium niobate fabricated by 4.5 MeV oxygen ion implantation with a dose of 6 × 10¹⁴ ions/cm² at room temperature. After ion implantation, these samples were annealed at 240 °C, 260 °C, and 300 °C for 30 min. We investigated annealing effect on the guiding modes and near-field images in the waveguides by prism-coupling method and end-face coupling method respectively. We found that for the extraordinary refractive index a positive alternation occurred in the near-surface region while a negative alternation happened at the end of ion track. Moreover, we measured the transmission spectra for the pure sample and implanted samples before and after annealed at different temperatures, and we observed an absorption peak at ∼480 nm (2.6 eV) in all of these SLN samples.     

Second harmonic generation in periodically poled LiNbO3 waveguides formed by oxygen‐ion implantation

Planar and channel waveguides were fabricatied in periodically poled lithium niobate crystals by 6 MeV O‐ion implantation. Single‐pass second harmonic generation was carried out. A conversion efficiency of 34.5%/(W · cm²) was achieved in the channel waveguide, and 1.11 mW second harmonic light at 492.5 nm was generated. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

ABSTRACT

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?10¹⁵ and 4?×?10¹⁷?ions?cm^?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?10¹⁷?ion?cm^?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?10¹⁷?ions?cm^?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior.     

会聚激光扫描铌酸锂晶体写入光波导时的最佳曝光间距

对利用激光精细加工技术在铌酸锂(LiNbO₃)晶体中写入光波导时的最佳曝光间距进行了详细地理论分析和实验研究.通过数值求解简化后的光折变动力学方程组，对会聚激光束沿不同方向扫描晶体时的最佳曝光间距进行了详细的数值模拟.结果表明：最佳曝光间距的选取与写入光束的扫描方向无关；当聚焦激光束平行于光轴扫描晶体时，得不到波导结构，但可以采用“三明治”辐照方式得到对称的折射率分布.采用会聚的绿激光束扫描掺铁铌酸锂(LiNbO₃：Fe)晶体进行了实验研究，晶体中的光致折射率变 关键词： 激光精细加工 最佳曝光间距 光波导 3晶体')" href="#">LiNbO₃晶体     

Optical waveguides in LiNbO<Subscript>3</Subscript> and stoichiometric LiNbO<Subscript>3</Subscript> crystals by proton exchange

The formation of optical planar waveguides in LiNbO₃ and stoichiometric LiNbO₃ crystals by proton exchange was reported. The prism-coupling method was used to characterize the dark-line spectroscopy at the wavelength of 633 and 1539 nm, respectively. The mode optical near-field outputs from proton-exchanged LiNbO₃ and SLN waveguides at 633 nm were presented. The mode field from stoichiometric LiNbO₃ (SLN) waveguide is lighter and more uniform than that from LiNbO₃ waveguide, which means the quality of the waveguide in SLN crystal is better than that of the LiNbO₃ waveguide. For proton-exchanged LiNbO₃ waveguides, the evolution of the refractive index profile with annealing was presented. The disorder profiles of Nb atoms in proton-exchanged LiNbO₃ waveguides were obtained by Rutherford backscattering/channeling technique. It is shown that the longer the exchange time, the larger the displacement of Nb atoms. Supported by the National Natural Science Foundation of China (Grant No. 10475052) and the Scientific Research Start-up Financing of Qufu Normal University     

High Energy He~ Ion Implantation in Titanium Doped Sapphire Crystal

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Optical waveguides in porous silicon pre-patterned by localised nitrogen implantation.

FIPOS technology forms islands of silicon isolated from a silicon substrate by (oxidised) porous silicon. The larger refractive index of the silicon islands suggests their use as optical waveguides. Sets of these silicon islands have been fabricated and the anticipated waveguiding has been observed at wavelengths of 1.15 and 1.3 μm in the silicon islands. However, the dominant waveguiding in these FIPOS structures is observed in the porous silicon between the silicon islands, close to the sample surface. A simple dynamic model of the anodisation process has been developed to explain the origin of this unexpected waveguiding.     

离子注入金红石单晶生成的金属Ni纳米晶的磁学性能研究

研究了能量为64keV、注量1×1017cm-2的Ni离子注入金红石TiO2单晶制备的植入金属纳米晶的微观结构和磁学性能。注入层的结构和磁学性能采用透射电子显微分析（TEM）和超导量子干涉磁强计（SQUID）进行分析。结果表明,金红石单晶中有尺寸为3～18nm的金属Ni纳米晶生成,注入区域基体明显非晶化。10K温度下金属Ni纳米晶的矫顽力约为16.8kA·m-1,比Ni块材的矫顽力大。样品的零场冷却/有场冷却（ZFC/FC）曲线表明,金属Ni纳米晶的截止温度约为85K。     

Nano hillock and complex crater formation by low-energy proton implantation with incident angle into lithium niobate single crystal

The formation of nano-size hillocks and simple and complex craters was observed as a result of ion–surface collisions with a lithium niobate single crystal on proton implantation. The low-energy ion implantation process is considered as a controllable and versatile tool for surface and near-surface modifications down to an atomic scale as an alternative to the swift heavy ion irradiation effect. Lithium niobate samples implanted by proton ions with a low energy of 120 keV at various fluences (10¹⁵ and 10¹⁶ protons/cm²) were studied using atomic force microscopy (AFM). The images of surface modification appear as simple and complex crater formation in the case of incident ions at normal to the surface. Varying the angle of incidence to θ=30° with respect to the normal to the surface, hillocks and multi-hillocks were observed. The complex craters with central uplifted, cone-shaped hillocks with a height of up to 4.3 nm are surrounded by low-height (1 nm) rims. The hillock height varies from a few nanometers to 16 nm with the basal diameter from 200 to 340 nm depending on the ion implantation conditions. The complex crater and hillock formation on the lithium niobate sample surface at the collision spot with the impact of incident angle is discussed.     

LiNbO3:Fe晶体中光写入波导时折射率的变化规律

研究了利用光辐照法制作光折变波导时LiNbO3:Fe晶体中折射率变化的规律.分别采用波长为6328nm和532nm的寻常偏振和非常偏振的细激光束和片状激光束，在LiNbO3:Fe晶体中进行了写入波导实验.研究表明，制作波导的写入光宜采用寻常偏振光.在利用由光束辐照LiNbO3:Fe晶体形成的正折射率变化区域作为波导结构时，必须严格控制辐照时间.否则，由于长时间光辐照会带来较强的噪音栅以及折射率变化区域会发生扩展，而难以形成优 质波导.利用片光在“三明治”方式辐照下，以小曝光量制作波导时，可以避免噪音栅的 关键词： 光致折射率变化 光折变波导 光辐照法 LiNbO3:Fe晶体     

Pr:YIG晶体抗磁性Faraday转动谱的研究

在单电子模型下，用量子理论研究了Pr:YIG晶体中Pr3+离子的抗磁性Faraday转动（FR）谱.分别在温度为77K和300K时，计算了Pr3+离子的λF-1/2θ-λ2的变化关系，计算结果与实验值符合较好.证实了晶场为单态的离子，其抗磁性FR比顺磁性FR对交换场（或外场）有更大的依赖性，且与温度有关.在强交换场环境中，两种转动对FR的贡献有相同的重要性. 关键词： Pr:YIG晶体 单离子模型 抗磁性Faraday转动