微等离子体及其应用

微等离子体已成为近年来国际上低温等离子体研究的热点课题之一。微等离子体是被限制在一个有限的空间范围内(尺度为毫米量级甚至更低)的等离子体,它通常能够运行在大气压条件下,它的低功耗、高密度、高稳定等特性以及其小巧、经济、便携等优势,为其在紫外光源的获得、微化学分析系统、生物医学、材料表面改性和加工、环境污染物的处理等领域提供了广泛的应用空间。文章对微等离子体及其应用进行了综述,介绍了各种微等离子体源的产生方法,以及它们在不同领域的研究和应用情况。     

阵列式等离子体射流处理芽孢的实验研究北大核心CSCD

研制了一套单极性微秒脉冲阵列式等离子体射流系统,该系统可在大气压下激发产生等离子体射流,实现大面积的灭菌处理。该系统可产生峰值电压20 kV、频率15 kHz的高压脉冲,激发产生的射流均匀稳定,覆盖面积达37.7 cm2,射流长度达6 cm,射流功率为40.05 W,处理5 min可使射流覆盖范围内的枯草芽孢杆菌的芽孢基本全部失去活性。考察了不同参数对灭菌效率的影响,结果表明,灭菌率与工作电压、脉冲频率、处理时间呈正相关,在氦气氛围下有较好的灭菌效果。SEM显示等离子体射流能够对枯草芽孢杆菌的芽孢外壳结构造成损坏,导致芽孢无法正常代谢,最终死亡。     

高性能强流脉冲电子束源关键技术研究

强流脉冲电子束源是高功率微波系统的核心部件之一,针对未来应用需求,亟需从绝缘、束流输运和热管理等多个方面提升强流束源技术性能。介绍了国防科技大学在高功率微波源用强流真空电子束源方面的研究进展。针对高功率微波管保真空需求,基于陶瓷金属钎焊,设计并研制了一种强场陶瓷真空界面,耐压大于600 kV、平均绝缘场强达到44 kV/cm、耐受脉宽大于80 ns,重复频率运行稳定;研制了一种基于SiC纳米线的强流电子束源冷阴极,在90 kV/cm的场条件下获得了1.17 kA/cm2的束流密度,相比传统天鹅绒阴极,SiC纳米线阴极的宏观电稳定性、发射均匀性及运行寿命均得到显著提高;针对相对论返波管,研制基于螺旋水槽型的强流电子束收集极,克服了高比能和低流速的矛盾,耐受热流密度达到1012 W/m2,能够满足系统长脉冲、高重复频率运行要求。     

A fast pulsed power source applied to treatment of conductingliquids and air

Two pilot pulsed power sources were developed for fundamental investigations and industrial demonstrations of treatment of conducting liquids. The developed heavy-duty power sources have an output voltage of 100 kV (rise time 10 ns, pulse duration 150 ns, pulse repetition rate maximum 1000 pps). A pulse energy of 0.5-3 J/pulse and an average pulse power of 1.5 kW have been achieved with an efficiency of about 80%. In addition, adequate electromagnetic compatibility is achieved between the high-voltage pulse sources and the surrounding equipment. Various applications, such as the use of pulsed electric fields (PEFs) or pulsed corona discharges for inactivation of microorganisms in liquids or air, have been tested in the laboratory. For PEF treatment, homogeneous electric fields in the liquid of up to 70 kV/cm at a pulse repetition rate of 10-400 pps could be achieved. The inactivation is found to be 85 kJ/L per log reduction for Pseudomonas fluorescens and 500 kJ/L per log reduction for spores of Bacillus cereus. Corona directly applied to the liquid is found to be more efficient than PEF. With direct corona we achieve 25 kJ/L per log reduction for both Gram positive and Gram negative bacteria. For air disinfection using our corona pulse source, the measured efficiencies are excellent: 2 J/L per log reduction     

大气压直流微等离子体射流研究

介绍了一种结构简单、 制作方便的微米量级大气压等离子体射流。这种微等离子体射流由直流电源驱动,可在多种工作气体(如Ar,He,N₂等)中实现大气压放电,产生高电流密度的辉光放电。为了确定微等离子射流产生的激发物种成分,测量了以Ar和N₂为工作气体的等离子体发射光谱。利用发射光谱相对强度比值法测量了氩气微等离子体射流的电子激发温度。实验显示,其电子激发温度约为3 000 K,这远低于大气压等离子体炬的电子激发温度。利用N₂的二正带发射光谱得到微等离子体的振动温度约为2 500 K;利用其电学参数估算电子密度在1013cm-3量级。利用此微等离子体射流进行了普通打印纸表面处理的应用实验。结果显示,这种微等离子体射流能够明显的提高普通打印纸的亲水性。     

不同条件下大气压脉冲弥散放电特性

利用上升沿约0.5 s、半高宽约6 s、幅值可达40 kV的微秒脉冲电源和上升沿约150 ns、半高宽约300 ns、幅值可达50 kV的纳秒脉冲电源激励大气压弥散放电,并分别采用刀型和锯齿电极放电。通过电压电流测量和发光图像拍摄,改变施加电压种类、脉冲重复频率、高压电极结构和气隙距离等参数,研究了不同条件下弥散放电特性。实验结果表明:纳秒脉冲电源和微秒脉冲电源均能在大气压空气中激励大面积的弥散放电,弥散放电面积最大达90 cm2;放电的均匀性受脉冲参数与电极形状影响显著,其中刀型电极条件下纳秒脉冲激励的弥散放电均匀性最佳;相同条件下纳秒脉冲弥散放电的瞬时功率大于微秒脉冲弥散放电,最高可达275 kW,而纳秒脉冲弥散放电的能量小于微秒脉冲弥散放电;保持其他条件不变,弥散放电传导电流幅值随着气隙距离的增加而降低,放电强度随着脉冲重复频率的增加而增强,弥散放电的工作电压范围随着脉冲重复频率的增加显著降低。因此在低频、刀型电极结构中易于获得均匀与较大工作电压范围的大气压弥散放电。     

不同条件下大气压脉冲弥散放电特性

利用上升沿约0.5 s、半高宽约6 s、幅值可达40 kV的微秒脉冲电源和上升沿约150 ns、半高宽约300 ns、幅值可达50 kV的纳秒脉冲电源激励大气压弥散放电,并分别采用刀型和锯齿电极放电。通过电压电流测量和发光图像拍摄,改变施加电压种类、脉冲重复频率、高压电极结构和气隙距离等参数,研究了不同条件下弥散放电特性。实验结果表明：纳秒脉冲电源和微秒脉冲电源均能在大气压空气中激励大面积的弥散放电,弥散放电面积最大达90 cm2;放电的均匀性受脉冲参数与电极形状影响显著,其中刀型电极条件下纳秒脉冲激励的弥散放电均匀性最佳;相同条件下纳秒脉冲弥散放电的瞬时功率大于微秒脉冲弥散放电,最高可达275 kW,而纳秒脉冲弥散放电的能量小于微秒脉冲弥散放电;保持其他条件不变,弥散放电传导电流幅值随着气隙距离的增加而降低,放电强度随着脉冲重复频率的增加而增强,弥散放电的工作电压范围随着脉冲重复频率的增加显著降低。因此在低频、刀型电极结构中易于获得均匀与较大工作电压范围的大气压弥散放电。     

全固态双极性纳秒脉冲电源研制及应用

研制了一种双极性交替的纳秒高压脉冲电源,进行了双极性纳秒脉冲放电产生等离子体研究。该电源先通过固态开关IGBT将直流电压截断成电压脉冲,通过可饱和脉冲变压器拓扑,实现升压并缩短脉冲上升沿。该电源可在一个周期内输出极性相反的2个脉冲,且时序可以灵活控制。通过优化调整器件参数,研制了两种不同输出性能参数的双极性纳秒脉冲电源:①峰值电压10 kV、爆发模式脉冲重复频率500 kHz（正负脉冲间隔2 μs）、连续重复频率1 kHz;②峰值电压25 kV、爆发重频200 kHz、连续重频600 Hz。测试电源的运行性能,发现电源存在温度升高的情况,但长时间（＞0.5 h）运行温度趋于稳定。10 kV电源连续运行在1 kHz时最高温度点50.5 ℃;25 kV电源连续运行在600 Hz时最高温度点60 ℃。利用该电源驱动线板电极阵列和表面介质阻挡放电结构,证实了该电源可以用于常压空气条件下产生大面积等离子体。     

Facilitative effect of graphene quantum dots in MoS_2 growth process by chemical vapor deposition

The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition(CVD) process. Herein, graphene quantum dots(GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS_2 monolayer. The obtained monolayer MoS_2 films were confirmed by optical microscope,scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS_2 monolayer was largely homogeneous.     

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Coupling electron‐hole (e^–‐ h⁺) and electron‐ion plasmas across a narrow potential barrier with a strong electric field provides an interface between the two plasma genres and a pathway to electronic and photonic device functionality. The magnitude of the electric field present in the sheath of a low temperature, nonequilibrium microplasma is sufficient to influence the band structure of a semiconductor region in immediate proximity to the solid‐gas phase interface. Optoelectronic devices demonstrated by leveraging this interaction are described here. A hybrid microplasma/semiconductor photodetector, having a Si cathode in the form of an inverted square pyramid encompassing a neon microplasma, exhibits a photosensitivity in the ～420–1100 nm region as high as 3.5 A/W. Direct tunneling of electrons into the collector and the Auger neutralization of ions arriving at the Si surface appear to be facilitated by an n ‐type inversion layer at the cathode surface resulting from bandbending by the microplasma sheath electric field. Recently, an npn plasma bipolar junction transistor (PBJT), in which a low temperature plasma serves as the collector in an otherwise Si device, has also been demonstrated. Having a measured small signal current gain h_fe as large as 10, this phototransistor is capable of modulat‐ing and extinguishing the collector plasma with emitter‐base bias voltages <1 V. Electrons injected into the base when the emitter‐base junction is forward‐biased serve primarily to replace conduction band electrons lost to the collector plasma by secondary emission and ion‐enhanced field emission in which ions arriving at the base‐collector junction deform the electrostatic potential near the base surface, narrowing the potential barrier and thereby facilitating the tunneling of electrons into the collector. Of greatest significance, therefore, are the implications of active, plasma/solid state interfaces as a new frontier for plasma science. Specifically, the PBJT provides the first opportunity to control the electronic properties of a material at the boundary of, and interacting with, a plasma. By specifying the relative number densities of free (conduction band) and bound (valence band) electrons at the base‐collector interface, the PBJT's emitter‐base junction is able to dictate the rates of secondary electron emission (including Auger neutralization) at the semiconductor‐plasma interface, thereby offering the ability to vary at will the effective secondary electron emission coefficient for the base surface (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ultraviolet light emissions from N2 microplasma electrically induced by metal-insulator-semiconductor devices

Various metal-insulator-semiconductor (MIS) devices in the form of Au/SiO_x(x<2)/Si, Au/AlO_y(y<1.5)/Si, Au/SiO_x/ZnO and Au/AlO_y/ZnO have been fabricated. For each device, once a sufficiently high positive voltage is applied on the Au electrode, the same ultraviolet (UV) emission with a spectrum featuring several specific peaks is detected. Interestingly, such UV emissions related to the MIS devices originate from the external N₂ microplasma. It is believed that at the high enough positive voltages the highly energetic electrons emitted out of the Au electrode activate the air to generate the N₂ microplasma.     

Design of a Reflective Aspherical Surface of a Compact Beam-Shaping Device

A compact beam-shaping device with a reflective aspherical surface is proposed. The device converts a circular symmetric Gaussian beam from a laser into a uniform distribution on a target plane. The device consists of a laser, a reflective aspherical surface formed on the base plane inclined by 45° against the optical axis, and a spacer. The surface is designed for an optical device used as a transmitter of indoor wireless optical communication, which is one of the promising applications. The designed surface is obtained by approximation using polynomial. Beam shaping of a simulated surface and a uniform intensity distribution on the target plane is obtained. The intensity distribution generated by the surface is numerically simulated and evaluated if the surface is misaligned. It is clarified that the generated distribution is tolerable for the misalignment.     

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采用纳秒脉冲电源,在静止空气条件下,开展了不同气压、放电距离和电压条件下的大体积纳秒脉冲放电实验研究.研究表明,当长度固定为200mm时,气压为250Pa时,随着电压的增大,放电区域从圆锥电极附近扩展到整个通道.当电压为12kV时,放电布满整个通道;随气压升高,初始放电电压增大.实验中发现在电压升高到一定程度时纳秒脉冲电离出现不稳定性,表现在气压相对较低时等离子体出现径向波动,气压相对较高时非平衡等离子体放电向电弧放电转变.分析认为,为了实现大体积均匀放电等离子体的产生,阻止放电不稳定性发生,应该采用上升沿时间更短,脉宽更小,电压更高的纳秒脉冲电源.     

微隙介质阻挡放电装置中的空气均匀放电光谱特性

大气压空气中介质阻挡均匀放电产生的等离子体在工业领域具有广阔的应用前景,为研究其产生条件及机理,利用微间隙介质阻挡放电装置,在大气压空气中实现了均匀放电。电学实验结果表明,低电压时电流波形在电压每半个周期存在若干个脉冲宽度很小的脉冲,肉眼观察到大量的微放电丝,随着外加电压增加,放电功率逐渐增加,放电空间内微放细丝增多。当电压增大到9.2 kV时,电流波形在电压每半个周期只存在一个宽度较大(约5.5 μs)强度较强的脉冲,观察不到微放电丝,微放电最终扩展叠加形成均匀放电。采集了光谱范围为330～420 nm的发射光谱,氮分子第二正带系337.1 nm的谱线强度明显比氮分子离子第一负带系391.4 nm的强。将337.1 nm谱线的强度归一,391.4 nm谱线的强度即反应了电子平均能量的大小,同时拟合计算了反映分子内部能量的氮分子振动温度。结果表明电子平均能量和分子内部能量都随外加电压的增加而降低。表明放电空间电场能量较低时不容易形成丝状放电,均匀放电模式中电子平均能量比微放电丝放电模式中的低。这些结果对于空气中介质阻挡均匀放电在工业应用方面具有一定的指导意义。     

0.34 THz大功率过模表面波振荡器研究

论文对0.34 THz大功率过模表面波振荡器进行了模拟设计和初步实验研究. 针对高过模比(D/λ ≈ 6.8)慢波结构, 根据小信号理论选择了合适的慢波结构尺寸和电子束距壁距离, 实现了器件在表面波TM₀₁模的π点附近谐振. 根据PIC模拟结果, 表面波振荡器可以实现频率和功率分别为0.34 THz和22.8 MW的太赫兹波输出. 采用微细电火花加工技术完成了不锈钢慢波结构的一体化精细加工, 并基于小型化脉冲功率驱动源搭建了实验装置. 初步的实验结果表明, 在电子束电压和电流分别约为420 kV和3.1 kA时, 0.34 THz大功率过模表面波振荡器输出脉冲的频率范围为0.319–0.349 THz, 辐射功率不小于250 kW, 脉宽约为2 ns. 最后分析讨论了实验输出功率与模拟结果相差较大的原因, 为表面波振荡器的性能改善奠定了基础.     

纳秒脉冲表面介质阻挡放电特性实验研究

在常规大气环境条件下,基于单极性纳秒脉冲电源对表面介质阻挡放电特性进行了实验研究。结果表明:纳秒脉冲表面介质阻挡放电的本质是丝状放电,放电集中在电压脉冲的上升沿;激励电压和脉冲重复频率越大,放电越强烈,越接近均匀放电,但电压的作用更侧重于均匀性,而频率的作用则侧重于放电的强度;电极间隙的优化可以使表面介质阻挡放电特性最好;玻璃作为阻挡介质时容易发生沿面闪络。     

纳秒脉冲表面介质阻挡放电特性实验研究

在常规大气环境条件下,基于单极性纳秒脉冲电源对表面介质阻挡放电特性进行了实验研究。结果表明:纳秒脉冲表面介质阻挡放电的本质是丝状放电,放电集中在电压脉冲的上升沿;激励电压和脉冲重复频率越大,放电越强烈,越接近均匀放电,但电压的作用更侧重于均匀性,而频率的作用则侧重于放电的强度;电极间隙的优化可以使表面介质阻挡放电特性最好;玻璃作为阻挡介质时容易发生沿面闪络。     

材料表面处理用强流电子回旋共振离子源

介绍一台2.45 GHz永磁强流电子回旋共振离子源,其外径160mm,高90 mm,放电室直径70 mm,高50 mm。微波馈入采用介质耦合方式,微波窗由一块f50 mm10 mm柱形BN和两块f30 mm10 mm的柱形陶瓷构成。离子源工作在脉冲模式下,采用三电极引出系统,最高引出电压达到100 kV,在微波输入功率300 W、进气量0.4 mL/min时,可引出峰值超过30 mA的氮离子束,在距离离子源引出孔1200 mm位置处的束流均匀区直径大于200 mm。     

Microplasma-Based Detectors for Gas Chromatography: Current Status and Future Trends

Abstract: Microplasma is a useful detector for analyzing the effluent of gas chromato-graphy due to its remarkable capacity for portability, high sensitivity, and excellent multielement selectivity. Compared to classical detectors, microplasma detectors have the advantages of small size, low cost, and low energy consumption in design and operation. We aim to provide an overview of microplasma detectors and show their applications in various chemical analyses. The operational characteristics and analytical performance of different microplasma detectors, such as capacitively coupled microplasma, glow discharge microplasma, and microhollow-cathode microplasma, are presented in detail to reveal the current status of microplasma detectors for gas chromatography. In addition, several approaches for the design of microplasma are discussed and the future trends in the development of microplasma detectors are highlighted at the end of this review. Various applications of microplasma detectors for gas chromatography systems are also presented in this review.     

Scalable preparation of water-soluble ink of few-layered WSe_2 nanosheets for large-area electronics

Few-layer two-dimensional(2 D) semiconductor nanosheets with a layer-dependent band gap are attractive building blocks for large-area thin-film electronics. A general approach is developed to fast prepare uniform and phase-pure 2 HWSe2 semiconducting nanosheets at a large scale, which involves the supercritical carbon dioxide(SC-CO2) treatment and a mild sonication-assisted exfoliation process in aqueous solution. The as-prepared 2 H-WSe2 nanosheets preserve the intrinsic physical properties and intact crystal structures, as confirmed by Raman, x-ray photoelectron spectroscopy(XPS),and scanning transmission electron microscope(STEM). The uniform 2 H-WSe2 nanosheets can disperse well in water for over six months. Such good dispersivity and uniformity enable these nanosheets to self-assembly into thickness-controlled thin films for scalable fabrication of large-area arrays of thin-film electronics. The electronic transport and photoelectronic properties of the field-effect transistor based on the self-assembly 2 H-WSe2 thin film have also been explored.