Self-assembly and growth of manganese phthalocyanine on an Au（111） surface

Self-assembly and growth of manganese phthalocyanine (MnPc) molecules on an Au(111) surface is investigated by means of low-temperature scanning tunneling microscopy. At the initial stage, MnPc molecules preferentially occupy the step edges and elbow sites on the Au(111) surface, then they are separately adsorbed on the face-centered cubic and hexagonal closely packed regions due to a long-range repulsive molecule—molecule interaction. After the formation of a closely packed monolayer, molecular islands with second and third layers are observed.     

锰的硅化物薄膜在Si(100)-2×1表面生长的STM研究

锰的硅化物在微电子器件、自旋电子学器件等领域具有良好的应用前景, 了解锰的硅化物薄膜在硅表面的生长规律是其走向实际应用的关键步骤之一. 本文采用分子束外延方法在Si(100)-2× 1表面沉积了约4个原子层的锰薄膜, 并利用超高真空扫描隧道显微镜研究了该薄膜与硅衬底之间在250-750℃范围内的固相反应情况. 室温下沉积在硅衬底表面的锰原子与衬底不发生反应, 薄膜由无序的锰团簇构成; 当退火温度高于290℃时, 锰原子与衬底开始发生反应, 生成外形不规则的枝晶状锰硅化物和富锰的三维小岛; 325℃时, 衬底上开始形成平板状的MnSi小岛; 525℃时, 枝晶状锰硅化物完全消失, 出现平板状的MnSi_1.7大岛; 高于600℃时, 富锰的三维小岛和平板状的MnSi小岛全部消失, 仅剩下平板状的MnSi_1.7大岛. 这些结果说明退火温度决定了薄膜的形态和结构. 在大约600℃退火时岛的尺寸随着退火时间的延长而逐渐增大, 表明岛的生长遵从扩散限制的Ostwald熟化机理.     

Realization of semiconducting Cu2Se by direct selenization of Cu(111)

Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics. However, a layered two-dimensional form of these materials has been rarely reported. Here, we realize semiconducting Cu₂Se by direct selenization of Cu(111). Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure. X-ray photoelectron spectroscopy data reveal chemical composition of the sample, which is Cu₂Se. The observed moiré pattern indicates a lattice mismatch between Cu₂Se and the underlying Cu(111)-$\sqrt{3}$×$\sqrt{3}$ surface. Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu₂Se exhibits a band gap of 0.78 eV. Furthermore, the calculated density of states and band structure demonstrate that the isolated Cu₂Se is a semiconductor with an indirect band gap of ～ 0.8 eV, which agrees quite well with the experimental results. Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.     

Adsorption behavior of iron phthalocyanine on a Ag（110） surface

An investigation on the growth behavior of FePc on a Ag(110) surface is carried out by using scanning tunneling microscopy(STM).At an FePc coverage of 3.5 ML,an ordered superstructure(densely packed) with a lateral shift is observed.The densely packed superstructure can be attributed to the substrate commensuration and the intermolecular van der Waals attractive interaction.The in-plane lateral shift in the superphase is specifically along the direction of [10] azimuth.The results provide a new perspective to understanding the intermolecular and the molecule-substrate interactions.     

Tailoring surface electronic states via strain to control adsorption: O/Cu/Ru(0 0 0 1)

A possible relationship between population of the surface electronic state and chemical reactivity for Cu layers on Ru(0 0 0 1) is revealed by tunneling spectroscopy and microscopy. The surface state shifts down in energy with increasing thickness. Ab initio calculations indicate that the energy shift can be assigned to the decreasing tensile strain of the deposited film. The reactivity of the surface towards oxygen correlates with the population of this state, reaching a maximum at Cu thicknesses where the surface state is empty. These data provides an indication of the effect of strain on the reactivity of metal surfaces.     

SrO/Si(100)表面去氧过程的研究

借助高温扫描隧道显微镜和光电子能谱技术,深入研究了SrO/Si(100)表面向Sr/Si(100)再构表面的动态转化过程.Sr/Si(100)再构表面在硅基氧化物外延生长中起重要作用.在该动态转化过程中,样品在500 ℃的退火温度下,表面出现SrO晶化的现象;在550—590 ℃的退火温度下,SrO/Si(100)开始向Sr/Si(100)转化,界面和表面上的氧以气态的SiO溢出,使得表面出现大量凹槽状缺陷.并且在此动态转化过程中表面的电子态表现出金属特性,这是由于表层硅原子发生断键重排,从而在表面出现悬 关键词： SrO/Si表面 Sr/Si表面 扫描隧道显微镜 去氧过程     

An STM study of the adsorption of Pb on Cu(100): formation of an ordered surface alloy

The adsorption of Pb on Cu(100) from 0 to 1 ML was investigated by UHV scanning tunneling microscopy. We obtained atomic resolution images of the different superstructures which appear at 300 K with increasing coverage (c(4 × 4), c(2 × 2) and c( √2)R45°). We confirm recent results and propose, partly on the basis of low temperature studies, new arguments in favour of an incorporation of lead atoms in the surface layer of copper for low coverage. We demonstrate that the c(4 × 4) superstructure corresponds to an ordered surface alloy of Pb₃Cu₄ composition, by investigating separately the alloying and de-alloying transitions. De-alloying occurs during the first-order transition between the c(4 × 4) and c(2 × 2) superstructures.     

Transformations of C-type defects on Si(100)-2 × 1 surface at room temperature – STM/STS study

We present a scanning tunneling microscopy study of the C-type defects on the Si(100)-2 × 1 surface and their transformations into other defect forms at room temperature. A model of the C defect as a dissociated water molecule was adopted for interpretation of the observed transformations. We explained the transformations by hopping the H or OH between bonding sites on Si dimers. Newly, the most stable defect form, corresponding to the H and hydroxyl group adsorbed on the same dimer, is reported. Real time observations provided an explanation for the defect C2-C2 described earlier. A reversible transition of this defect into another form, not revealed yet, is presented. Electronic structure of the observed defects is studied by means of scanning tunneling spectroscopy. Measured spectra show semiconducting character of the C defect. Spectra of the other defect forms are discussed.     

Theoretical study of the structural properties of SiC(001)—Si-terminated surface and the formation of its STM images

We present theoretical study of structural and electronic properties of SiC(001)-p(2 × 1)-Si-terminated surface and the formation of its STM images. Ab initio calculations independently performed with the use of plane-wave and local-orbital basis have shown that the structure of this surface is built up by long symmetric silicon dimers, which agrees with the results of previous ab initio studies done by other authors. STM simulations show that the variation of the tunneling current along substrate surface very well reproduces the localization properties of occupied and unoccupied surface states (π, π*). We have found that the tensile stress applied along dimers axis causes the buckling of surface dimers and transfer of the charge between dimers atoms. This result suggests that the buckling of silicon surface dimers observed in LEED measurements might be caused by external stress. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

STM simulation of molecules on ultrathin insulating overlayers using tight-binding: Au-pentacene on NaCl bilayer on Cu

We present fast and efficient tight-binding (TB) methods for simulating scanning tunneling microscopy (STM) imaging of adsorbate molecules on ultrathin insulating films. Due to the electronic decoupling of the molecule from the metal surface caused by the presence of the insulating overlayer, STM can be used to image the frontier molecular orbitals of the adsorbate. These images can be simulated with a very efficient scheme based on hopping integrals which also enables the analysis of phase shifts in the STM current. Au-pentacene complex adsorbed on a NaCl bilayer on Cu substrate provides an intricate model system which has been previously studied both experimentally and theoretically. Our calculations indicate that the complicated shape of the molecular orbitals may cause multivalued constant current surfaces - leading to ambiguity of the STM image. The results obtained using the TB methods are found to be consistent with both DFT calculations and experimental data.     

Commensurate ordering of iron phthalocyanine on Ag(1 1 1) surface

Epitaxial growth of iron phthalocyanine on a silver (1 1 1) surface has been studied with scanning tunneling microscopy in ultrahigh vacuum. While several structures were observed, this report concentrates on what appeared to be the most stable phase. This phase has commensurate two-dimensional ordering with oblique unit vectors (b₁, b₂) where b₁ = 5a₁ + 2a₂ and b₂ = 5a₂, where a₁ and a₂ are unit vectors of Ag(1 1 1) surface. The rotation angle of iron phthalocyanine relative to the silver [1 0 ] direction was determined to be 16.63° from the high-resolution image analysis. The oblique structure is more commensurate than that of iron phthalocyanine on graphite and of copper phthalocyanine on the Ag(1 1 1) surface. The observed FePc on Ag(1 1 1) structure is similar to that of FePc on Au(1 1 1), but has significantly higher surface density. Bias dependence of the images was observed and is consistent with the expected small HOMO–LUMO gap.     

Selective formation of ultrathin PbSe on Ag(111)

Two-dimensional (2D) semiconductors, such as lead selenide (PbSe), locate at the key position of next-generation devices. However, the ultrathin PbSe is still rarely reported experimentally, particularly on metal substrates. Here, we report the ultrathin PbSe synthesized via sequential molecular beam epitaxy on Ag(111). The scanning tunneling microscopy is used to resolve the atomic structure and confirms the selective formation of ultrathin PbSe through the reaction between Ag₅Se₂ and Pb, as further evidenced by the theoretical calculation. It is also found that the increased accumulation of Pb leads to the improved quality of PbSe with larger and more uniform films. The detailed analysis demonstrates the bilayer structure of synthesized PbSe, which could be deemed to achieve the 2D limit. The differential conductance spectrum reveals a metallic feature of the PbSe film, indicating a certain interaction between PbSe and Ag(111). Moreover, the moiré pattern originated from the lattice mismatch between PbSe and Ag(111) is observed, and this moiré system provides the opportunity for studying physics under periodical modulation and for device applications. Our work illustrates a pathway to selectively synthesize ultrathin PbSe on metal surfaces and suggests a 2D experimental platform to explore PbSe-based opto-electronic and thermoelectric phenomena.     

Role of surface defects in room-temperature growth of metals on Si(100)2 × 1

Nucleation and formation of silver islands on the Si(100)2 × 1 surface was for the first time studied by scanning tunneling microscopy directly during deposition. Crucial role of C-type defects on growth has been observed. Rapidly diffusing Ag atoms nucleate on these defects and during island evolution the defects represent stable terminations of Ag atomic chains. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

STM observation of surface phases of Sn/Cu(0 0 1)

Geometrical structures of the Sn-adsorbed Cu(0 0 1) surfaces are studied with scanning tunneling microscopy. There are four phases in the Sn coverage range between 0.2 and 0.5 mono-atomic layer (ML). On the basis of the observed atomic images in this range, we propose structural models for the phases with 0.33 and 0.375 ML of Sn. All the phases consist of embedded Sn atoms in the Cu surface, forming two-dimensional surface alloy structures. On the surface with ∼0.4 ML of Sn, a novel one-dimensional structure is observed.     

c(2×2)O吸附Cu(001)表面结构、电子态与STM图像的研究

用投影子缀加波和CP分子动力学方法研究了贵金属Cu(001)面的表面结构、弛豫以及O原子的c(2×2)吸附状态. 研究结果得出在这种吸附结构中，O原子与衬底Cu原子之间的垂 直距离约为0069nm，Cu—O键长为0.194nm，功函数约为5.29 eV；吸附O原子形成金属性能带结构，由于Cu—O的杂化作用,在费米能以下约6.7 eV处出现了局域的表面态.用Tersoff-Hamann途径计算了该表面的扫描隧道显微镜图像，并讨论了与实验结果之 间的关系. 关键词： Cu(001)-c(2×2)/O 电子态 STM图像     

STM study of the Mo(1 1 2) and Mo(1 1 1) surfaces

The Mo(1 1 2) and Mo(1 1 1) surfaces have been studied by STM and DFT/GGA modeling. Due to high quality and cleanness of the surfaces, for the first time good STM images of large fragments of the Mo(1 1 2) and Mo(1 1 1) have been obtained. Lack of atomic resolution in the rows of the Mo(1 1 2) surface is attributed to flatness of distribution of density of the electronic states along the rows. This suggestion is illustrated by comparison of STM images for Mo(1 1 1) and Mo(1 1 2) and model calculations of STM pictures for these surfaces.     

Au(111)表面单个钴酞菁分子的去氢过程

利用低温超高真空扫描隧道显微镜对单个钴酞菁分子实现了选键化学反应.通过对吸附于Au(111)表面的单个钴酞菁分子外围H原子的"剪裁",并用实验图像和谱学方法,结合第一性原理理论计算研究了逐步去除钴酞菁分子8个外围H原子的过程.理论计算结果再现了实验中所观测到的分子空间构型的变化,并阐明了吸附体系中局域自旋的恢复和变化过程.     

Structure of Reconstructed Cu(100) Surface Induced by Dissociative Adsorption of Gaseous Oxygen

用低能电子衍射(LEED)和扫描隧道显微镜技术研究了氧气在Cu(100)表面化学吸附所形成的表面重构结构．在低覆盖度下,实验上观察到了两个有序重构的混合相,分别为c(2×2)O重构和(√2×2√2)R45°-O重构．在氧原子的覆盖度逐渐增加的过程中,c(2×2)O重构区域的面积逐渐减小．在初始氧化阶段,实验上观察到了呈条状的“锯齿”形的重构结构,这些锯齿形的结构是由相邻的局域化的c(2×2)区域的边界区域(Cu)构成的．STM实验发现,相对于其他重构区域,这些锯齿形的重构区域与有机分子之间存在更加强烈的相互作用．通过分析在不同退火温度下样品LEED衍射点的变化,研究了重构结构的热稳定性,发现三种结构的热稳定性顺序是：锯齿结构>c(2×2)O重构>(√2×2√2)R45°-O重构．     

Direct STM evidence for Cu-benzoate surface complexes on Cu(1 1 0)

The chemisorption of benzoate on a Cu(1 1 0) crystal at room temperature was studied using low temperature scanning tunneling microscopy. STM images, obtained at 5 K for low benzoate coverage, show isolated surface species that consist of a single Cu adatom stabilizing two benzoate molecules in a flat orientation. These species are discussed in relation to other known metal-organic surface compounds. At higher coverage the overlayer, called the α-phase, was also observed at 5 K and found to contain features attributable to two Cu adatoms associated with two pairs of non-equivalent benzoate species. The observed topographic features are used to suggest refinements of the structural model of the ordered α-phase overlayer.     

STM/STS characterization of platinum silicide nanostructures grown on a Pt(1 1 1) surface

Formation of the platinum silicides nanostructures and their electronic properties have been studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The investigated structures have been grown by solid state epitaxy upon deposition of the Si atoms (coverage about 0.2 ML) and sequential annealing at temperature range 600-1170 K. The formation of the Pt₂Si and PtSi islands was investigated until the Si atoms embedded into the Pt substrate at the 1170 K. The images of the silicides structures and Pt substrates with atomic resolution have been recorded. The evolution of the spectroscopic curves both for substrates and nanostructures, corresponding to the structural and sizes changes, have been shown.