Electronic structure of Mg–Zn-based compounds

We present a comparison between calculated densities of states of the Laves phase MgZn₂ and hexagonal Mg₂₈Zn₆₅Y₇ and experimental results obtained using both X-ray emission and photoabsorption spectroscopy techniques. We show that there is general agreement between both sets of data for both alloys. We also point out that the two samples retain a metallic character, yet the hexagonal approximant of the Mg–Zn–Y quasicrystal family is less metallic than the Laves phase.     

Thermodynamic properties of separable square-wave potentials

Exact analytic solutions to the Schrödinger equation for an electron moving in three dimensional potentials have been studied. These solutions can correspond to metals, semiconductors, or insulators. We show that there is an efficient method to calculate the electron density of states for this class of potentials. From the density of states, the temperature dependence of thermodynamic properties such as the chemical potential and the specific heat were determined. Ten thousand cubic separable potentials were considered. This data makes it possible to identify trends in how the form of the potential is related to the thermodynamic properties of a material.     

First-principles study of orbital ordering in cubic fluoride KCrF_3

Comprehensive first-principles calculations are performed to provide insight into the intriguing physical properties of the ternary cubic fluoride KCrF3. The electronic structures exhibit a prominent dependence on the effective local Coulomb interaction parameter Ueff. The ground state of the cubic phase is a ferromagnetic （FM） half-metal with Ueff equal to 0, 2, and 4 eV, whereas the insulating A-type antiferromagnetic （A-AFM） state with concomitant homogeneous orbital ordering is more robust than the FM state for Ueff exceeding 4 eV. We propose that the origin of the orbital ordering is purely electronic when the cooperative Jahn-Teller distortions are absent in cubic KCrF3.     

Electronic structure of barium hexaboride

The electronic structure and the Fermi surface BaB₆ are studied as a function of doping in a conventional bandstructure approach based on the local density approximation to density functional theory (LDA). In particular it is shown that magnetic breakthrough can occur between the two sheets of the Fermi surface disconnected by electron-hole mixing and the spin-orbit interaction. It is further suggested that angle-resolved photoemission will see a single ellipse in the (100) plane for certain doping values, due to the finite energy/momentum resolution of the method. Transport properties, computed within Bloch-Boltzmann theory, are also presented. The bare plasma energy is found to be 0.6 eV in the stoichiometric compound. Received 23 May 2000     

Electronic structure of LaNi and its hydride LaNi H

The electronic structure of LaNi₅ and its hydride LaNi₅H₇ are obtained using the self-consistent cluster-embedding calculation method. The Fermi level of LaNi₅H₇ is 5.172 eV higher than that of LaNi₅. In both materials, the La 5d electrons locate nearby the Fermi levels, and make only a small contribution to the density of states (DOS) of the valence bands. There is no significant charge transfer from La to Ni in LaNi₅. But for LaNi₅H₇, there is a charge transfer of 1.16 electrons from La to H, and H atoms are combined mainly with Ni to form hybridized orbitals in the energy regions far below the Fermi level. An explanation of hydrogenation of LaNi₅ is proposed: It is easy for hydrogens to take off some localized La 5 d electrons near the Fermi level, and combine with Ni to form hybridized orbitals in lower energy regions. This process is therefore in favor of energy, and forces a lattice expansion until the Fermi level rises to zero. Received 13 July 2001 / Received in final form 10 December 2001 Published online 17 September 2002     

Spin density distribution of the conduction electrons in diperylene hexafluorophosphate analysed by high-resolution NMR

High-resolution ¹³C nuclear magnetic resonance with ¹H cross polarization and ¹H decoupling under magic angle spinning is measured for the quasi-one dimensional organic conductor diperylene hexafluorophosphate (including tetrahydrofurane solvent molecules) at temperatures between 160 K and 270 K. Ab initio molecular orbital calculations are used for chemical shift analysis and for assignment of Knight shifted lines and individual carbon positions. The coexistence of neutral perylene molecules and perylene radicals in the same radical cation salt is revealed. From Knight and chemical shifts we were able to distinguish two inequivalent perylene radicals within the conducting stack. The spin density distribution of the molecular electronic wave function is determined quantitatively for these radicals. Received 29 June 1999 and Received in final form 4 November 1999     

Soft norm-conserving pseudopotential for carbon

A soft, norm-conserving pseudopotential for carbon is presented and its performance tested by calculations on atomic states and on diamond: electronic energy levels of different atomic configurations, equilibrium lattice constant, bulk modulus, and the TA(X) frozen-phonon frequency are accurately reproduced. Convergence of the total energy of diamond with the size of the plane-wave basis set is compared for several frequently used pseudopotentials, and it is shown that calculations with the reported pseudopotential can be performed at considerably lower cost than with the other norm-conserving pseudopotentials, without loosing the accuracy of the latter in predicting structural and dynamical properties. The rapid convergence of the results with the plane-wave cutoff is comparable to the performance of the Vanderbilt's ultrasoft pseudopotentials. The transferability of the pseudopotential to other electronic configurations is discussed. Received 8 September 1999     

Interatomic and intra-atomic electron correlation in narrow band solids

Effect of interatomic electron correlation has been studied in narrow band solids using one-particle Green function method. We follow Hubbard in drawing an analogy with an alloy and find a self-consistent solution which predicts a finite lifetime for pseudoparticles. A specific case of a (non-magnetic) model system with half-filled parabolic band has been considered to calculate the pseudoparticle density of states function. Unlike the result in the presence of intra-atomic correlations alone, we find that this particular system is never an insulator, however large intra-atomic correlations may be.     

Structural, electronic and optical properties of pure and Ni-doped CdI2 layered crystals as explored by ab initio and crystal field calculations

Influence of impurity Ni²⁺ ions on optical absorption spectra of layered CdI₂ single crystals has been considered for localized level of doping. Optical properties of CdI₂:Ni²⁺ crystals were modeled using two independent approaches: (i) DFT-based ab initio calculations and (ii) semi-empirical crystal field theory. The former method allowed for locating the Ni²⁺ 3d states with respect to the host’s band structure, providing a link between the properties of impurity and host itself. The latter method allowed for calculations of crystal field splitting of the Ni²⁺ LS terms, giving an opportunity to assign the main bands in the absorption spectrum of the doped crystal. To increase accuracy in calculating the point charge contribution to the crystal field parameters (CFP), contributions of all crystal lattice ions located at a distance of up to 72.999 Å from the Ni ion were included into the crystal lattice sums. The crystal field Hamiltonian was diagonalized in the space of 25 wave functions of the spin-triplet terms ³F, ³P and the spin-singlet terms ¹S, ¹D, ¹G of the 3d⁸ electron configuration of Ni²⁺ ion. Additional calculations of the band structure and optical functions were performed to reveal the structure of the energy bands, their role in the formation of optical properties of this system in the overlapping impurity-ligand effects. Electron density distribution in the space between atoms before and after doping was compared; hybridization of the Ni 3d states with iodine 5p states was demonstrated. The role of the crystal anisotropy in the observed effects is discussed.     

第一性原理研究In,N共掺杂SnO2材料的光电性质

采用全电势线性缀加平面波(FP-LAPW)的方法,基于密度泛函理论第一性原理结合广义梯度近似(GGA),运用Wien2k软件计算了In, N两种元素共掺杂SnO₂材料的电子态密度和光学性质. 研究表明,共掺杂结构在自旋向下和向上两方向上都出现细的局域能级,两者态密度分布不对称;带隙内自旋向下方向上产生局域能级,共掺化合物表现出半金属性;能带结构显示两种共掺杂化合物仍为直接禁带半导体,价带顶随着N浓度的增加发生向低能方向移动,带隙明显增宽;共掺下的介电函数虚部主介电峰只在8.58 eV关键词：电子结构态密度能带结构光学性质     

First-principles studies of the structural and electronic properties of the C14 Laves phase XCr2 (X = Ti,Zr, Nb,Hf and Ta)

The optimized structures, electronic properties and bonding characteristics of the hexagonal C14 Laves phase XCr₂ (X?=?Ti, Zr, Nb, Hf and Ta) have been investigated using first-principles calculations. Our results reveal that the equilibrium formation enthalpies are not depends entirely on the atomic numbers. The total and the partial density of states and valence charge densities of Laves phases are also calculated and applied to reveal the nature of the bonding character in consideration of the different atomic numbers.     

铁电体SrBi2Nb2O2电子能带结构的第一性原理研究

采用第一性原理的方法计算了SrBi₂Nb_2O.9（SBN）的顺电相、铁电相的电子结构.顺电相是间接带隙, 铁电相是直接带隙,它们的大小分别为1.57和2.23 eV.顺电相和铁电相的价带顶均主要来自于O₂p态的贡献.而顺电相和铁电相的导带底则分别来自Nb₄d态和Bi₆p态的贡献.计算表明SBN铁电相的低的漏电流与Bi 6p轨道有关.由顺电相到铁电相时,Nb₄d和O_{2关键词：顺电相铁电相态密度电子能带结构}     

Electronic structure and lattice properties of zinc-blende InN under high pressure

Dependencies of electronic structure and lattice properties of InN with zinc-blende structure on hydrostatic pressure are presented based on band structures computed using the empirical pseudopotential method. The pressure behavior of the pseudopotential form factors have been analyzed. The effect of pressure on the density of states has been examined. Trends in bonding and ionicity under pressure are also discussed. Our results show as well that the absolute value of the Fourier transform of the valence charge density might be useful in the prediction of the phase transition in zinc-blende materials. Received 25 May 2001 and Received in final form 16 January 2002     

Electronic structure of GaxIn1-xAsySb1-y quaternary alloy by recursion method

Summary  This work reports the electronic structure of GaInAsSb quaternary alloy by recursion method. A five-orbital sp₃s^* per atom model was used in the tight-binding representation of the Hamiltonian. The local density of states (LDOS), integrated density of states (IDOS) and structural energy (ST.E) were calculated for Ga, In, As and Sb sites in Ga_0.5 In_0.5 As_0.5 Sb_0.5 and GaInAsSb lattice matched to GaAs and the same alloy lattice matched to GaSb. There are 216 atoms in our cluster arranged in a zincblend structure. The results are in good agreement with available information about the alloy.     

Study on the spin-states of cobalt-based double-layer perovskite Sr<Subscript>2</Subscript>Y<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>Co<Subscript>2</Subscript>O<Subscript>7</Subscript>

The spin-states of cobalt based perovskite compounds depend sensitively on the valence state and local crystal environment of Co ions and the rich physical properties arise from strong coupling among charge, spin, and orbital degrees of freedom. While extensive studies have been carried out in the past, most of them concentrated on the isotropic compound LaCoO₃. In this paper, using the unrestricted Hartree-Fock approximation and the real-space recursion method, we have investigated the competition of various magnetically ordered spin-states of anisotropic double-layered perovskite Sr₂Y_0.5Ca_0.5Co₂O₇. The energy comparison among these states shows that the nearest-neighbor high-spin-intermediate-spin ferromagnetically ordered state is the relevant magnetic ground state of the compound. The magnetic structure and sizes of magnetic moments are consistent with the recent experimental observation.     

First-principles electronic structure of rare-earth arsenides

The electronic properties of rare-earth arsenides have been calculated from first principles. In the calculations we have treated the rare-earth f electrons both as core-like and as valence-like electrons. We consider the changes in the energy bands and in the density of states near the Fermi level which are found to be relevant, except for the case of LuAs, and discuss this in relation with the role played from the rare-earth 5d derived states. Moreover we show that the rare-earth 5d related bands are particularly sensitive to the variation of the lattice constant; change in the lattice constant of less than 1% leads to a different behaviour with respect to the crossing of the rare-earth 5d derived bands and the As 4p derived bands along the Δ-direction. This point is discussed in connection with the possibility of having a semimetal-semiconductor transition in the rare-earth arsenides. Received 22 February 2001     

Magneto-electronic properties of the AA- and ABC-stacked graphites

In this study, we apply the tight-binding method to magneto-electronic properties of the AA- and ABC-stacked graphites, which are strongly dependent on the interlayer interactions, the magnetic field, and the stacking sequences. First of all, the interlayer interactions induce the significant changes in the energy dispersions, the band symmetry about the Fermi level, the overlap between valence and conduction bands, the band width, and the band-edge states or the symmetry points. Then, the magnetic field induces the Peierls phase in the Bloch functions and thus strongly affects the energy dispersions of the Landau Levels, the subband spacings, the energy width, and the special structures in density of states (DOS). Finally, the stacking sequences dominates over the low-energy band overlap and the anisotropy of energy bands. The effects mentioned above are exactly reflected in the density of state. Here, DOS exhibits the 3D, 2D, and 1D characteristics.