Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes

The electronic structure and magnetic properties of the transition-metal(TM) atoms(Sc–Zn, Pt and Au) doped zigzag GaN single-walled nanotubes(NTs) are investigated using first-principles spin-polarized density functional calculations. Our results show that the bindings of all TM atoms are stable with the binding energy in the range of 6–16 eV. The Sc- and V-doped GaN NTs exhibit a nonmagnetic behavior. The GaN NTs doped with Ti, Mn, Ni, Cu and Pt are antiferromagnetic. On the contrary, the Cr-, Fe-, Co-, Zn- and Au-doped GaN NTs show the ferromagnetic characteristics. The Mn- and Codoped GaN NTs induce the largest local moment of 4μB among these TM atoms. The local magnetic moment is dominated by the contribution from the substitutional TM atom and the N atoms bonded with it.     

Structural,electronic properties and stability of Ag-doped GaAs nanowires: First-principles study

First-principles computations have been addressed to determine the effects of Ag substitution to the structural, electronic properties and stability of Ag-doped GaAs NW. Our results show that the substitutional Ag energetically prefers to substitute the surface Ga (E_f=−0.529 eV) under As-rich conditions and introduces a much shallow (0.19 eV above the Fermi) acceptor level, which is of typical p-type behavior. With the increase in the Ag concentration, the p-type character gradually weakens and n-type character arises. Thus, one can expect to synthesize Ag-doped GaAs NWs for p-type or n-type applications with the control of Ag concentration and its microarrangement.     

Structural,electronic,optical,and magnetic properties of Co-doped Cu_2O

We investigate the magnetic properties of Co-doped Cu_2O. We studied first the electronic and structural properties of Cu_2O using the optimization of the lattice constant which is 4.18 . The calculated gap is found between 0.825 eV and1.5 eV, these values are in good agreement with the experimental results. The Co atoms are inserted in Cu_2O by means of the density functional theory(DFT) using LSDA, LSDA +U, and LSDA + MBJ approximations in the WIEN2 k code, based on the supercell model by setting up 12, 24, and 48 atoms in(1×1 × 2),(1 × 2 × 2), and(2 × 2×2) supercells respectively with one or two copper atoms being replaced by cobalt atoms. The energy difference between the ferromagnetic and antiferromagnetic coupling of the spins located on the substitute Co has been calculated in order to obtain better insight into the magnetic exchange coupling for this particular compound. The studied compound exhibits stable integer magnetic moments of 2 μBand 4 μBwhen it is doped with 2 atoms of Co. Optical properties have also been worked out. The results obtained in this study demonstrate the importance of the magnetic effect in Cu_2O.     

Enhanced magnetic anisotropy of nickel nanosheet prepared in Na-4 mica

Nanosheets of nickel with thickness equal to 0.6 nm have been grown within the interlayer spaces of Na-4 mica. The sheets are made up of percolative clusters of nanodisks. Magnetization characteristics indicate a superparamagnetic behavior with a blocking temperature of 428 K. The magnetic anisotropy constant as extracted from the coercivity data has been found to be higher than that of bulk nickel by two orders of magnitude. This is ascribed to a large aspect ratio of the nickel nanophase. The Bloch exponent is also found to be considerably different from that of bulk nickel because of a size effect. The Bloch equation is still found to be valid for the two dimensional structures.     

Structures,stabilities,and electronic properties of GaAs tubelike clusters and single-walled GaAs nanotubes

<正>The geometric structures,stabilities,and electronic properties of(GaAs)_n tubelike clusters at up to n=120 and single-walled GaAs nanotubes(GaAsNTs) were studied by density functional theory(DFT) calculations.A family of stable tubelike structures with a Ga-As alternating arrangement were observed when n≥8 and their structural units (four-membered rings and six-membered rings) obey the general developing formula.The average binding energies of the clusters show that the tubelike cluster with eight atoms in the cross section is the most stable cluster.The sizedependent properties of the frontier molecular orbital surfaces explain why the long and stable tubelike clusters can be obtained successfully.They also illustrate the reason why GaAsNTs can be synthesized experimentally.We also found that the single-walled GaAsNTs can be prepared by the proper assembly of tubelike clusters to form semiconductors with large band gaps.     

Structural, electronic, and magnetic properties of Co-doped ZnO

Density functional theory based calculations have been carried out to study structural, electronic, and magnetic properties of Zn1-xCoxO (x = 0, 0.25, 0.50, 0.75) in the zinc-blende phase, and the generalized gradient approximation proposed by Wu and Cohen has been used. Our calculated lattice constants decrease while the bulk moduli increase with the increase of Co 2+ concentration. The calculated spin polarized band structures show the metallic behavior of Co-doped ZnO for both the up and the down spin cases with various doping concentrations. Moreover, the electron population is found to shift from the Zn-O bond to the Co-O bond with the increase of Co 2+ concentration. The total magnetic moment, the interstitial magnetic moment, the valence and the conduction band edge spin splitting energies, and the exchange constants decrease, while the local magnetic moments of Zn, Co, O, the exchange spin splitting energies, and crystal field splitting energies increase with the increase of dopant concentration.     

Electronic and optical properties of V doped AlN nanosheet: DFT calculations

Electronic and optical properties of pure and V-doped AlN nanosheet have been investigated using density functional theory, and the dielectric tensor is calculated using the random phase approximation (RPA). The results of structural calculations show that the V atoms tend to replace instead of aluminum atoms with the lowest formation energy. In addition, study of the electronic properties shows that pure AlN nanosheet is a p-type semiconductor that by increasing one V atom, it possesses the metallic properties and magnetic moment becomes Zero. Moreover, by replacing two V atoms, the half-metallic behavior with 100% spin polarization can be found, and each supercell gains a net magnetic moment of 3.99 µ_B. Optical properties like the dielectric function, the energy loss function, the absorption coefficients, the refractive index are calculated for both parallel and perpendicular electric field polarizations, and the results show that the optical spectra are anisotropic.     

Structural,magnetic and electronic properties of single Iron atom at graphene edges

A systemic theoretical study of one iron atom on graphene ribbon edges (Fe/GR) has been carried out by using density functional theory. Thermodynamic stabilities, electronic and magnetic properties of Fe/GR with different edge types and adsorption locations were investigated. According to the Clar's aromatic sextet rule, the formation energies and density of states of Fe atom are found to rely tightly on the ribbon's periodic length. Moreover, Fe atoms on reconstructed zz edges are also stable with low formation energies and semiconducting properties. Finally, the magnetic properties are found sensitive with the structural details, especially the local bond environment. The present theoretical results constitute a useful picture for the deep comprehending on the interface details of the lateral Fe/graphene heterostructures.     

Structural, curvature and electronic properties of Rh adsorption on armchair single-walled carbon nanotube

This paper systematically studies the rolling effects of the (n, n) single-wall carbon nanotubes (SWCNT) with different curvatures on Rh adsorption behaviours by using density functional theory. The outside charge densities of SWCNTs are found to be higher than those inside, and the differences decrease with the increase of the tube radius. This electronic property led to the discovery that the outside adsorption energies are higher than the inside ones, and that the differences are reduced with the increase of the tube radius. Partial density of states and charge density difference indicate that these strong interactions induce electron transfer between Rh atoms and SWCNTs.     

Mn,Fe,Co掺杂GaAs电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的平面波超软赝势方法对本征GaAs以及3d过渡金属Mn、Fe、Co单掺杂GaAs晶体的电子结构及其光学性质进行理论计算以及对比研究.计算结果表明:能带结构中三种掺杂体系均引入新的能级,能带条数增多,导带底与价带底顶向深能级移动,带隙减小;费米能级附近出现了杂质能级,导致掺杂体系光子能量位于0时介电函数虚部便有所响应,掺杂体系相较于本征体系的静介电常数有所提升;Mn、Fe、Co三种掺杂体系相较于本征体系在红外以及远红外区域吸收系数得到了明显的提升,其中Fe掺杂GaAs的光催化特性最好.     

Structural,electronic,and magnetic properties of vanadium atom-adsorbed MoSe_2 monolayer

Using the first-principles calculations, we study the structural, electronic, and magnetic properties of vanadium adsorbed MoSe_2 monolayer, and the magnetic couplings between the V adatoms at different adsorption concentrations. The calculations show that the V atom is chemically adsorbed on the MoSe_2 monolayer and prefers the location on the top of an Mo atom surrounded by three nearest-neighbor Se atoms. The interatomic electron transfer from the V to the nearestneighbor Se results in the polarized covalent bond with weak covalency, associated with the hybridizations of V with Se and Mo. The V adatom induces local impurity states in the middle of the band gap of pristine MoSe_2, and the peak of density of states right below the Fermi energy is associated with the V- dz~2 orbital. A single V adatom induces a magnetic moment of 5 μBthat mainly distributes on the V-3d and Mo-4d orbitals. The V adatom is in high-spin state, and its local magnetic moment is associated with the mid-gap impurity states that are mainly from the V-3d orbitals. In addition,the crystal field squashes a part of the V-4s electrons into the V-3d orbitals, which enhances the local magnetic moment.The magnetic ground states at different adsorption concentrations are calculated by generalized gradient approximations(GGA) and GGA+U with enhanced electron localization. In addition, the exchange integrals between the nearest-neighbor V adatoms at different adsorption concentrations are calculated by fitting the first-principle total energies of ferromagnetic(FM) and antiferromagnetic(AFM) states to the Heisenberg model. The calculations with GGA show that there is a transition from ferromagnetic to antiferromagnetic ground state with increasing the distance between the V adatoms. We propose an exchange mechanism based on the on-site exchange on Mo and the hybridization between Mo and V, to explain the strong ferromagnetic coupling at a short distance between the V adatoms. However, the ferromagnetic exchange mechanism is sensitive to both the increased inter-adatom distance at low concentration and the enhanced electron localization by GGA+U, which leads to antiferromagnetic ground state, where the antiferromagnetic superexchange is dominant.     

Structural, electronic, and magnetic properties of CrN under high pressure

The structural,electronic and magnetic properties of CrN under high pressure are investigated by first-principles calculations.The antiferromagnetic orthorhombic structure is identified to be the preferred ground state structure.It possesses a bulk modulus of 252.8 GPa and the nonzero magnetic moment of 2.33 μ B per Cr ion,which agree well with the experimental results.CrN undergoes structural and magnetic transitions from an antiferromagnetic rocksalt structure to a non-magnetic Pnma phase at 132 GPa.Under compression,the magnetic moment of the Cr ion reduces rapidly near the equilibrium and phase transition point,and the distribution of the density of states is broadened,but the form of overlap between the orbitals of Cr d and N p remains unchanged.The broadening of the band induces spin flipping,which consequently results in the smaller magnetic moment of the Cr ion.     

应变和C掺杂对单层BN纳米片的电子结构和磁学性质的影响

利用基于密度泛函理论的第一性原理计算方法, 研究了应变和C原子掺杂对单层BN纳米片的电子结构和磁学性质的影响. 计算结果表明未掺杂的单层BN纳米片具有宽的直接带隙, 在压缩和拉伸应变的作用下, 带隙会分别增大和减小, 但应变对带隙的调制整体效果不太明显. 单个C原子掺入BN纳米片的态密度揭示体系呈现出半金属性(Half-metallicity), 磁矩主要源于C 2p态, 而B 2p和N 2p态在极化作用下也能提供部分磁矩. 两个C原子掺入BN纳米片时, 磁性基态会随着C原子的间距发生变化: 当两C原子为最近邻(nn)和次近邻(nnn)时, 反铁磁态为磁性基态; 而当两C原子为次次近邻(nnnn)时, 铁磁态为基态, 并且其态密度也显示出半金属性.     

First-principle study of the electronic and optical properties of BInGaAs quaternary alloy lattice-matched to GaAs

The first-principle calculations based on density functional theory have been used to study the electronic and optical properties of zinc-blende BInGaAs quaternary alloy lattice-matched to GaAs. The calculated results show the band gap of BInGaAs alloy are direct and the band gap will reduce with the increment of boron and indium composition. The electronic structures of BInGaAs alloy are analyzed via the calculation of density of states. The variation of optical properties including dielectric function, absorption coefficient, reflectivity, refractive index and energy loss function of the alloy were also investigated in detail.     

GaAs相变和热力学性质的密度泛函理论研究

利用平面波赝势密度泛函方法,对GaAs从闪锌矿结构到CsCl 结构的相变进行了理论研究.通过Birch-Murnaghan状态方程拟合闪锌矿结构GaAs的能量和体积,得到了GaAs的热力学性质.我们发现对 GaAs来说,闪锌矿结构通常比CsCl结构稳定,由闪锌矿结构到CsCl结构的相变压力在37.019 GPa左右.计算所得到的晶格常数、体弹模量及体弹模量对压强的一阶导数与实验值以及其他作者的计算值相符合.     

The metallic nature of two-dimensional transition-metal dichalcogenides and MXenes

Metallic two-dimensional (2D) materials such as transition-metal dichalcogenides (TMDCs) and MXenes exhibit intriguing properties, including superconductivity, magnetism and electrocatalysis. Studies on the correlation between their nanoscale structures and properties can facilitate the development of photodetectors, supercapacitors, nanocatalysts, etc., but this topic has not been reviewed systematically. Here, we provide a comprehensive overview on the key factors that dictate the structures and properties of these 2D metals. We examine their phase transitions induced by structural or electronic modifications based on microscopic imaging, spectral characterization, and electrical measurements. From the perspective of surface and interface engineering, we elucidate the influences of lattice defects, dopants, and intercalated species between adjacent layers. Moreover, heterostructures involving highly conductive 2D component(s) are discussed, which may enable the observation of fascinating phenomena and/or synergistic effects due to the interlayer interactions. Finally, we provide insights into opportunities for new applications, e.g., radio-frequency antennas and electromagnetic interference shields. Feasible routes are also proposed to overcome the current challenges.     

Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy

ZnS epilayers were grown on (1 0 0) semi-insulating GaAs substrates using an atmospheric pressure metal-organic chemical vapor deposition (CVD) technique under the atomic-layer epitaxy (ALE) mode. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to find the effect of the II–VI ratio of the 30-nm thick ZnS epilayers and to investigate the thickness-dependent characteristics of ZnS epilayers with the thicknesses of 30 and 100 nm. While the II–VI ratio-dependent ZnS quality is consistent regardless of the measurement, the thickness-dependent epilayer quality is quite contrary depending on the measurement. This difference demonstrates the non-uniform distribution of the strain–relaxation in the ZnS epilayer along the depth.     

Structural and magnetic properties of polymer-stabilized tetragonal Ni nanoparticles

Ni nanoparticles (Ni-NPs), with diameter (D) ranging 5–30 nm, were synthesized by reducing nickel chloride with NaBH₄ in the presence of polymer molecules of poly-vinyl alcohol (PVA) in cold water. Nickel chloride was dispersed in the PVA molecules which stabilized the resulting Ni-NPs. Experiments were carried out with and without PVA to elucidate the effect of PVA molecules on the structural and magnetic properties of Ni-NPs. It was found that both uncoated (uc) and PVA-coated (pc) Ni-NPs exhibit a tetragonal (t) crystal structure, i.e. different from the cubic (fcc) structure of bulk nickel. pc Ni-NPs (paramagnetic in nature) converted to fcc Ni (spherical shape, D ～ 12 nm) on annealing at 573 K in air, exhibiting a saturation magnetization M _s = 20.5 emu/g, squareness ratio M _r /M _s = 0.48 and coercivity H _c = 248 Oe, which is higher than the bulk Ni (0.7 Oe). uc Ni-NPs showed little improvement in M _s and H _c on air annealing. The core–shell structure resulted in a high H _c value in stable pc Ni-NPs in air. Electron magnetic resonance revealed exchange interaction between the core and shell, which changes on annealing in air.     

二维缺陷GaAs电子结构和光学性质第一性原理研究

采用基于密度泛函理论的第一性原理方法计算了存在Ga空位缺陷和掺杂B原子的二维GaAs的能带结构、态密度和光学性质.计算结果表明空位缺陷二维GaAs显示出金属特性,B原子的引入使体系变为间接带隙半导体,禁带宽度为0.35 eV.态密度计算发现体系低能带主要由Ga的s态、p态、d态和As的s态、p态构成;高能带主要由Ga和As的s态、p态构成.掺杂B原子与存在空位缺陷的二维GaAs相比,静态介电常数相对较低,变为8.42,且易于吸收紫外光,在3.90～8.63 eV能量范围具有金属反射特性,反射率达到52%.