Adsorption of propylene carbonate on the Li Mn_2O_4 (100) surface investigated by DFT+U calculations

Understanding the mechanism of the interfacial reaction between the cathode material and the electrolyte is a significant work because the interfacial reaction is an important factor affecting the stability,capacity,and cycling performance of Li-ion batteries.In this work,spin-polarized density functional theory calculations with on-site Coulomb energy have been employed to study the adsorption of electrolyte components propylene carbonate(PC)on the LiMn2O4(100)surface.The findings show that the PC molecule prefers to interact with the Mn atom on the LiMn2O4(100)surface via the carbonyl oxygen(Oc),with the adsorption energy of?1.16 eV,which is an exothermic reaction.As the adsorption of organic molecule PC increases the Mn atoms coordination with O atoms on the(100)surface,the Mn3+ions on the surface lose charge and the reactivity is substantially decreased,which improves the stability of the surface and benefits the cycling performance.     

Ferromagnetism of MnxLiyZn1−x−yO films

We had prepared Mn-doped ZnO and Li, Mn codoped-ZnO films with different concentrations using spin coating method. Crystal structure and magnetic measurements demonstrate that the impurity phases (ZnMnO₃) are not contributed to room temperature ferromagnetism and the ferromagnetism in Mn-doped ZnO film is intrinsic. Interesting, saturated magnetization decreases with Mn or Li concentration increase, showing that some antiferromagnetism exists in the samples with high Mn or Li concentration. In addition, Mn_0.05Zn_0.95O film annealed in vaccum shows larger ferromagnetism than the as-prepared sample and more oxygen vacancies induced by annealing in reducing atmosphere enhance ferromagnetism, which supports the bound magnetic polaron model on the origin of room temperature ferromagnetism.     

Co掺杂对铁磁金属La0.8Sr0.2MnO3磁电阻影响机理

通过对La_0.8Sr_0.2Mn_1-yCo_yO₃(y≤02)饱和磁矩和输运的测量,研究了Co对La_0.8Sr_0.2MnO₃的磁电阻影响机制.结果表明,在La_0.8Sr_0.2Mn_1-yCo_yO₃（y≤02）中Co³⁺离子是低自旋态.由于Mn³⁺—O—Co³⁺—O—Mn³⁺类型的磁交换与Mn³⁺-Mn⁴⁺离子间双交换作用相比较弱,Curie温度T_C附近的磁电阻随着Co掺杂量的增加而降低.与此相反,由于Co²⁺离子与e_g巡游电子的反铁磁交换耦合作用,低温区间的磁电阻随着Co掺杂量的增加而升高. 关键词： 低自旋 磁电阻 磁交换作用     

Mn effect on wurtzite-to-cubic phase transformation in ZnO

Mn doping effect on a wurtzite-to-cubic phase transformation in ZnO has been investigated by in situ high pressure X-ray powder diffraction using synchrotron radiation. Unit cell expansion is clearly observed in Mn-doped ZnO samples. Mn ions sit at Zn site in the wurtzite structure. The onset transition pressure for the wurtzite-to-cubic phase transformation decreases from about 9.5 GPa for pure ZnO to 6 GPa for sintered 2at.% Mn-doped ZnO while the compressibility and volume collapse at transition pressures are not sensitive to the Mn doping in the wurtzite phase. The doping of Mn ions in ZnO increases the onset transition pressure for the cubic-to-wurtzite phase transformation. The results could be explained by a reduction of phase transformation barriers for both transition paths by the Mn doping. The observation of reduction of the wurtzite-to-cubic phase transformation pressure might point out a new direction to synthesize cubic wurtzite phase of ZnO by doping transition element(s).     

掺杂Mn2+的浓度对CdS纳米颗粒光致发光的影响

采用反胶束法,合成了硅土包裹的掺有不同浓度的Mn2 的CdS纳米颗粒.高分辨电镜表明这些颗粒的直径小于5 nm.仅仅改变Mn2 的掺杂浓度,研究了这些颗粒的光致发光谱和光致发光激发谱,结果表明:Mn2 浓度的大小对掺杂CdS纳米颗粒的发光产生了重要的影响.通过电子顺磁共振谱的测量和分析揭露了Mn2 浓度影响这些掺杂颗粒发光效率的原因.     

Effects of doping concentration on properties of Mn-doped ZnO thin films

This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500~°C. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn_2p3 / 2 increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mn-doped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4~wt.% and 10~wt.% Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20~wt.% Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.     

Photoluminescence properties of Ca_4La_6(SiO_4)_4(PO_4)_2O_2-based phosphors for wLEDs

The apatite compound Ca_4La_6(SiO_4)_4(PO_4)_2O_2(CLSPO) was explored as the host material for phosphors used in white light-emitting diodes(w LEDs). The crystal structure of the CLSPO host prepared by the solid-state reaction method was investigated with Rietveld refinement. The rare earth ions(Eu~(3+)/Tb~(3+)/Ce~(3+), Tb~(3+)/Tb~(3+), Mn~(2+))activated CLSPO phosphors were synthesized, and their photoluminescence properties, quantum yields, as well as thermal stabilities, were studied. Under near-ultraviolet excitations, the Eu~(3+) and Tb~(3+) -doped CLSPO compounds exhibited red and green emissions with high luminescence efficiencies. Besides, tunable emissions from green to orange were obtained by introducing Mn~(2+) ions into the Tb~(3+) -doped CLSPO samples. The results showed that the phosphors studied may have potential applications for w LEDs.     

基于中频溅射的掺铒Al2O3薄膜的光致发光特性

利用中频磁控溅射方法沉积制备了掺铒Al2O3薄膜,室温下测量了薄膜在1535nm波长处的光致发光光谱和抽运功率、掺铒浓度、退火温度对光致发光光谱强度的影响。结果表明,在真空气压为2×10-1Pa,氩气流量为70cm3/s,氧气流量为25～45cm3/s的条件下,最佳掺铒浓度为1.0at%,最佳退火温度为850℃。     

Effect of impurity ions configurations on the magnetic properties of Mn-doped ZnO

The magnetic and electronic properties of Mn-doped ZnO are studied by first-principles calculations. It is found that the exchange interaction between Mn ions depends on the Mn-Mn distribution configuration and distance. We also found that the ferromagnetism can be existed when the Mn-Mn distance is large and Mn ions are distributed uniformly, and the long ranged ferromagnetism is explained by the interaction between Mn and O atoms. Thus, it is possible to tune ferromagnetism in Mn-doped ZnO semiconductors by controlling the doping position in ZnO lattice.     

Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si （001） substrates by plasma enhanced chemical vapour deposition （PECVD）. X-ray diffraction measurements reveal that the Znl-xMn.O films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn^2＋ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device （SQUID） measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.     

Influences of different oxidants on characteristics of La_2O_3/Al_2O_3 nanolaminates deposited by atomic layer deposition

A comparative study of two kinds of oxidants(H_2O and O_3) with the combination of two metal precursors(TMA and La(~iPrCp)_3) for atomic layer deposition(ALD) La_2O_3/Al_2O_3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La_2O_3/Al_2O_3 nanolaminates are studied. Initial testing results indicate that La_2O_3/Al_2O_3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H_2O-based La_2O_3/Al_2O_3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H_2O-based La_2O_3/Al_2O_3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O_3-based La_2O_3/Al_2O_3 nanolaminates indicate that O_3 is a more appropriate oxidant to deposit La_2O_3/Al_2O_3 nanolaminates for electron devices application.     

Effects of Mn Doping on the Optical Properties of Zn2GeO4 Phosphor Prepared Through Co-Precipitation

Journal of Applied Spectroscopy - Zn2GeO4 (ZGO) phosphor and Mn-doped ZGO (ZGO:Mn2+) phosphor were successfully synthesized through co-precipitation. Results indicated that Zn ions were...     

纳米棒状长余辉材料BaAl_2O_4:Eu~(2+),Dy~(3+)的制备与发光性能

利用硝酸铝、硝酸钡、尿素为原料,以一定比例H_2O/正丁醇及H_2O/正丁醇/SBS的混合液作传递压力的介质,进行反应,然后将得到的前驱体在还原气氛下高温煅烧,得到亮度高,余辉时间长的BaAl_2O_4:Eu~(2+),Dy~(3+)纳米棒状长余辉发光材料。TEM和SEM测试表明高温煅烧后得到的BaAl_2O_4:Eu~(2+),Dy~(3+)为棒状结构,其激发光谱和发射光谱均为宽带,主发射峰分别为498 nm,是典型的Eu~(2+)5d→4f跃迁。该方法的特点在于:采用水热法合成的BaAl_2O_4:Eu~(2+),Dy~(3+)长余辉发光材料一般需经过高温煅烧,容易结块,而在合成制得的产品经1 300℃高温煅烧后仍呈现分散性良好的棒状结构,不需球磨,且发光性能良好,可直接应用。同时将2种不同的实验条件进行比较,发现在不使用表面活性剂的条件下依然可得到分散性良好的棒状BaAl_2O_4:Eu~(2+),Dy~(3+)长余辉发光材料。该制备方法有望在其他铝酸盐和硅酸盐系长余辉发光材料的制备中得到应用。     

Photoluminescence of ZnO and Mn-Doped ZnO Polycrystalline Films Prepared by Plasma Enhanced Chemical Vapour Deposition

ZnO and Mn-doped ZnO polycrystalline films are prepared by plasma enhanced chemical vapour deposition at low temperature （220℃）, and room-temperature photoluminescence of the films is systematically investigated. Analysis from x-ray diffraction reveals that a11 the prepared films exhibit the wurtzite structure of ZnO, and Mndoping does not induce the second phase in the films. X-ray photoelectron spectroscopy confirms the existence of Mn^2＋ ions in the films rather than metalic Mn or Mn^4＋ ions. The emission efficiency of the ZnO film is found to be dependent strongly on the post-treatment and to degrade with increasing temperature either in air or in nitrogen ambient. However, the enhancement of near band edge （NBE） emission is observed after hydrogenation in ammonia plasma, companied with more defect-related emission. Furthermore, the position of NBE shifts towards to high-energy legion with increasing Mn-doped concentration due to Mn incorporation into ZnO lattice.     

Synthesis of Mn-doped ZnO diluted magnetic semiconductors in the presence of ethyl acetoacetate under solvothermal conditions

Mn-doped ZnO samples with 5%, 20% and 40% nominal Mn concentrations were prepared in the presence of ethyl acetoacetate under solvothermal conditions. UV absorption spectroscopic analysis discloses that chemical modification was achieved by reaction of Zn or Mn precursor with ethyl acetoacetate in ethanol medium. XRD and HRTEM characterizations indicate that ZnMnO₃ impurity phase was formed in the 20% and 40% Mn-doped ZnO samples while no secondary phase was present in the 5% Mn-doped sample. The 5% Mn-doped sample consists of spheroid-like particles with size of 10-50 nm and has a real Mn concentration of 3.2%. Ferromagnetism and paramagnetism coexist in the 5% Mn-doped ZnO sample at room-temperature, which may arise from ferromagnetic exchange interaction as well as small secondary phases. The 20% and 40% Mn-doped samples show large paramagnetic effects at room temperature. Small paramagnetic secondary phases and clustering of Mn are probably responsible for this.     

ZnO对EU:LiNbO3晶体的性能及光谱性质影响

应用坩埚下降法技术，以同成份化学摩尔分数[x（Li2O）=48．6％,x（Nb2O3）=51．4％]为原料，生长出了以不同Zn，Eu双掺杂的LiNbO3晶体。测定了晶体下部与上部的X射线衍射图（XRD）、激发光谱、荧光光谱以及声子边带谱。Zn的掺杂量对Eu^3＋离子在晶体中的分布产生很大的影响。Zn掺杂摩尔分数为3％时．Eu^3＋离子在进入品格时受到有效的压制。随着Zn掺杂摩尔分数提高，达到6％时，压制作用减弱。从Zn^2＋离子在LiNbO3中随浓度变化的分凝情况以及对Eu^3＋离子的排斥作用解释了Eu^3＋离子分布的原因。同时测定了Zn掺杂样品的声子边带谱。     

紫外激发下锰掺杂纳米氧化锌

应用气相传输法, 以铜为催化剂, 在硅衬底上制备了锰掺杂氧化锌纳米四足晶须. 利用x射线与电子衍射谱、扫瞄电镜和高分辨率透射电镜, 对样品形貌、结构和成份进行表征与检测; 通过355nm与375nm紫外光激发下掺杂与未掺杂样品光致发光谱的对比, 结合拉曼散射谱与光致激发谱对掺杂样品中反常光致发光机理进行分析. 结果表明, 样品沿［0001］方向生长的前端和内部长有纤细刺状结构的中空六方管组成; 样品中掺入Mn2+的无辐射复合中心作用, 是掺杂样品紫外辐射强度和谱宽变小的主要原因, 氧化锌晶体中晶格周期对Mn2+中d-d电子跃迁过程的影响, 是375nm紫外光激发下掺杂样品中415nm辐射峰产生的主要原因.     

玻璃基质中ZnS纳米晶Mn2+掺杂的两种组态下载流子限域

用融熔法制备了分散有ZnSⅩⅣMn2+纳米晶的钠硼硅(Na2O-B2O2-SiO2)玻璃.对样品在不同温度和时间下进行退火处理,获得不同尺寸的纳米晶.通过激发和发射光谱测量发现样品中的Mn2+有两种组态,即替位组态(Mn2+)替位和间隙组态(Mn2+)间隙.用有效质量模型计算了纳米晶的粒径.结果表明在一些样品中存在着载流子限域即R<Ra.     

Electronic and magnetic properties of Mn-doped ZnO: Total-energy calculations

Based on the spin generalized gradient approximation (σGGA) of the density functional theory (DFT), the structural, magnetic, and electronic properties of Mn-doped ZnO structure have thoroughly been investigated. It is found that the Mn atom prefers to substitute one of the Zn atoms, producing the energetically most stable configuration for the Mn-doped ZnO structure. Employing the Hubbard potential within the calculations suggests various changes and modifications to the structural, magnetic and electronic properties of the Mn-doped ZnO. Our calculations reveal that the local magnetic moment at the Mn site using the ordinary σGGA functional is 4.84 μ_B/Mn, which is smaller than that evaluated by including the Hubbard potential of 5.04 μ_B/Mn. Overall, the electronic band structure of the system, within the σGGA+U, is half-metallic, with metallic nature for the majority state and semiconducting nature for the minority state. Simulated scanning tunneling microscopy (STM) images for both unoccupied and occupied states indicate siginficant brightness on both Zn and Mn atoms and much brighter protrusions around the O atoms, respectively.     

Tm3+和Ho3+双掺氟锗酸盐玻璃的中红外发光性质质

用高温熔融法制备了Tm3+和Ho3+离子双掺的65GeO2-12AlF3-10BaF2-8Li2O-5La2O3氟锗酸盐玻璃,应用Judd-Ofelt理论,获得了Ho3+离子的强度参量（Ω2,Ω4,Ω6）,自发辐射跃迁几率Ar,辐射寿命τ等光谱参量。根据McCumber理论,计算了玻璃中Tm3+和Ho3+离子的吸收截面σa、受激发射截面σe和增益光谱G(λ)。在808nm激光二极管激发下,研究分析了Tm3+离子的交叉弛豫过程和Tm3+敏化Ho3+离子的2.0µm的红外发射光谱。结果表明,一定浓度Ho3+的共掺提高了Tm3+（3F4）→Ho3+（5I7）之间的能量转移效率,增强了~2.0µm的红外发光。