高迁移率Ge沟道器件研究进展

高迁移率Ge沟道器件由于其较高而且更对称的载流子迁移率, 成为未来互补型金属-氧化物-半导体(CMOS) 器件极有潜力的候选材料. 然而, 对于Ge基MOS器件, 其栅、源漏方面面临的挑战严重影响了Ge基MOS 器件性能的提升, 尤其是Ge NMOS器件. 本文重点分析了Ge基器件在栅、源漏方面面临的问题, 综述了国内外研究者们提出的不同解决方案, 在此基础上提出了新的技术方案. 研究结果为Ge基MOS 器件性能的进一步提升奠定了基础.     

Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated. The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation. Moreover, the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element. During the initial annealing of co-implanted Ge, it is easier to form high bonding energy F_nV_m clusters which can stabilize the excess vacancies, resulting in the reduced vacancy-assisted diffusion of phosphorus. The maximum activation concentration of about 4.4×10²⁰ cm^-3 with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm². The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.     

高速率沉积磁控溅射技术制备Ge点的退火生长研究

采用磁控溅射技术在Si衬底上以350?C沉积14 nm的非晶Ge薄膜,通过退火改变系统生长热能,实现了低维Ge/Si点的生长.利用原子力显微镜(AFM)和拉曼(Raman)光谱所获得的形貌和声子振动信息,对Ge点的形成机理和演变规律进行了研究.实验结果表明:在675?C退火30 min后,非晶Ge薄膜转变为密度高达8.5×109cm-2的Ge点.通过Ostwald熟化理论、表面扩散模型和对激活能的计算,很好地解释了退火过程中,Ge原子在Si表面迁移、最终形成纳米点的行为.研究结果表明用高速沉积磁控溅射配合热退火制备Ge/Si纳米点的方法,可为自组织量子点生长实验提供一定的理论支撑.     

Calculations of the dynamic dipole polarizabilities for the Li~+ ion

The B-spline configuration-interaction method is applied to the investigations of dynamic dipole polarizabilities for the four lowest triplet states(2~3S,3~3S,2~3P,and 3~3P) of the Li~+ ion.The accurate energies for the triplet states of n~3S,n~3P,and n~3D,the dipole oscillator strengths for 2~3S(3~3S)→n~3P,2~3P(3~3P)→n~3S,and 2~3P(3~3P)→n~3D transitions,with the main quantum number n up to 10 are tabulated for references.The dynamic dipole polarizabilities for the four triplet states under a wide range of photon energy are also listed,which provide input data for analyzing the Stark shift of the Li~+ ion.Furthermore,the tune-out wavelengths in the range from 100 nm to 1.2 μm for the four triplet states,and the magic wavelengths in the range from 100 nm to 600 nm for the 2~3S→3~3S,2~3S→2~3P,and 2~3S→3~3P transitions are determined accurately for the experimental design of the Li~+ ion.     

金属与半导体Ge欧姆接触制备、性质及其机理分析

金属与Ge材料接触时界面处存在着强烈的费米钉扎效应, 尤其与n型Ge形成的欧姆接触的比接触电阻率高, 是制约Si基Ge器件性能的关键因素之一. 本文对比了分别采用金属Al和Ni 与Si衬底上外延生长的p型Ge和n型Ge材料的接触特性. 发现在相同的较高掺杂条件下, NiGe与n型Ge可形成良好的欧姆接触, 其比接触电阻率 较 Al接触降低了一个数量级, 掺P浓度为2×10¹⁹ cm^-3时达到1.43×10^-5 Ω·cm². NiGe与p型Ge接触和Al接触的比接触电阻率相当, 掺B浓度为4.2×10¹⁸ cm^-3时达到1.68×10^-5 Ω·cm². NiGe与n型Ge接触和Al电极相比较, 在形成NiGe过程中, P杂质在界面处的偏析是其接触电阻率降低的主要原因. 采用NiGe作为Ge的接触电极在目前是合适的选择. 关键词： 金属与Ge接触性质 NiGe 比接触电阻率     

空间用GaInP/GaAs/In0.3Ga0.7 As(1 eV)倒装三结太阳电池研制

采用阶变缓冲层技术 (step-graded) 外延生长了具有更优带隙组合的倒装GaInP/GaAs/In_0.3Ga_0.7As(1.0 eV) 三结太阳电池材料, TEM和HRXRD测试表明晶格失配度为2%的In_0.3Ga_0.7As 底电池具有较低的穿透位错密度和较高的晶体质量, 达到太阳电池的制备要求. 通过键合、剥离等工艺制备了太阳电池芯片. 面积为 10.922 cm² 的太阳电池芯片在空间光谱条件下转换效率达到32.64% (AM0, 25 ℃), 比传统晶格匹配的 GaInP/GaAs/Ge(0.67 eV) 三结太阳电池的转换效率提高3个百分点. 关键词： 太阳电池 三结 倒装结构     

高性能SOI基GePIN波导光电探测器的制备及特性研究

本文报道了在SOI衬底上外延高质量单晶Ge薄膜并制备高性能不同尺寸Ge PIN波导光电探测器.通过采用原子力显微镜、X射线衍射、拉曼散射光谱表征外延Ge薄膜的表面形貌、晶体质量以及应变参数,结果显示外延Ge薄膜中存在约0.2%左右的张应变,且表面平整,粗糙度为1.12 nm.此外,通过暗电流、光响应度以及3 dB带宽的测试来研究波导探测器的性能,结果表明尺寸为4μm×20μm波导探测器在-1 V的反向偏压下暗电流密度低至75 mA/cm~2,在1.55μm波长处的响应度为0.58 A/W,在-2 V的反向偏压下的3 dB带宽为5.5 GHz.     

GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model

Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p⁺/n (n⁺/p) structure, it is demonstrated here that an optimal base doping N_d(a) = 3 (7)×10¹⁸ cm^-3 is observed, and the superior p⁺/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.     

PECVD分层结构对提高氢化非晶硅TFT迁移率的影响

为了进一步提高氢化非晶硅薄膜晶体管 (a-Si:H TFT) 的场效应电子迁移率, 研究了批量生产条件下对欧姆接触层和栅极绝缘层进行多层 制备, 不同的工艺参数对a-Si:H TFT场效应电子迁移率的影响. 研究表明随着对欧姆接触层 (n⁺层) 分层数的增加, 以及低速生长的栅极绝缘层 (GL层) 和高速生长的栅极绝缘层 (GH 层) 厚度比值提高, a-Si:H TFT的场效应迁移率得到提升. 当n⁺层分层数达到 3层, GL层和GH层厚度比值为4:11 时, 器件的场效应电子迁移率达到0.66 cm²/V·s, 比传统工艺提高了约一倍, 显著改善了a-Si:H TFT 的电学特性, 并在量产线上得到了验证. 关键词： 非晶硅薄膜晶体管 电子迁移率 欧姆接触层 栅极绝缘层     

直接键合的三结太阳能电池研究

本文研制了直接键合的三结GaInP/GaAs/InGaAsP太阳电池.直接键合技术可以减少晶格不匹配的材料在外延生长过程中产生的线位错和面缺陷,将缺陷限制在界面几十纳米的薄层而不向内扩散,是未来实现高效多结电池的发展趋势之一.此类电池国内鲜有报道.本文键合三结电池的键合界面采用p+GaAs/n+InP结构,得到电池开路电压3.0 V,在电池结构没有优化的情况下获得效率24%,表面未做减反膜.开路电压表明三结电池实现了串联,为单片集成的高效多结电池提供了新的途径.对实验结果进行了分析并给出了改进措施.     

Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation

The growth process of GeO_x films formed by plasma post-oxidation(PPO) at room temperature(RT) is investigated using angle-resolved x-ray photoelectron spectroscopy(AR-XPS). The experimental results show that the distributions of the Ge~(4+)states, a mixture of the Ge_(2+)and Ge~(3+)states, and the Ge~(1+)states are localized from the GeO_x surface to the GeO_x/Ge interface. Moreover, the Ge~(1+)states are predominant when the two outermost layers of Ge atoms are oxidized.These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeO_x layer and valuable for the optimization of Ge-based gate stacks for future complementary metal–oxide–semiconductor(MOS) field-effect transistor(CMOSFET) devices.     

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer

In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.     

煅烧温度对Ba1.2Ca0.64SiO4：0.10Eu，0.06Mn粉体发光性能的影响

以MCM-41为硅源,在800~1 100℃下合成了Ba_1.2Ca_0.64SiO₄：0.10Eu,0.06Mn荧光粉,研究了煅烧温度对荧光粉发光性能的影响。实验结果表明,Eu²⁺的蓝绿光发射带的强度与宽度随煅烧温度的升高先增大后减小,在1 000℃时强度达到最大。最大发射峰位随温度的升高而发生红移,由800℃和900℃时的450 nm移至1 000℃和1 100℃时的480 nm。Mn²⁺的红光发射起源于Eu²⁺发射光的激发,其强度随温度的升高而增大。与Mn²⁺发生能量传递作用的Eu²⁺主要位于10配位的M（1）格位。     

Aging behavior and ionic conductivity of ceria-based ceramics: a comparative study

An understanding of high-temperature aging effects on the electrical properties of electrolytes is very important in selecting optimum compositions for practical applications. The aging behavior and mechanisms of doped zirconia ceramics have been extensively studied. However, little information is available regarding the aging behavior of ceria-based electrolytes. The present study has demonstrated that a high-temperature aging at 1000 °C has a significant effect on the ionic conductivity of the Y- or Gd-doped ceria (Ce_1−xY_xO_2−δ and Ce_1−xGd_xO_2−δ), especially in the case of the Gd doping. The aging behavior is characterized by a critical dopant concentration, above which the aging has a detrimental effect on the conductivity of the doped ceria ceramics. The aging behavior in the doped ceria cannot be explained using the aging mechanisms applied to the doped zirconia. Instead, the formation of the microdomains in the doped ceria has been acknowledged to be the main contribution to the aging behavior of the Y- or Gd-doped ceria ceramics. The formation ability of microdomains has been estimated to be in the order of La³⁺>Gd³⁺>Y³⁺, based on the degree of size mismatch between the dopant ion and Ce⁴⁺ ion. The critical dopant concentrations at which the microdomains start to form for La³⁺, Gd³⁺ and Y³⁺ in the doped ceria ceramics are x=0.15, 0.2 and 0.25, respectively. This critical dopant concentration is also an important indication: below which the conductivity is governed by only the association enthalpy, and above which the conductivity is dominated mainly by the microdomains rather than the association enthalpy.     

Si/Ge/Si异质横向SPiN二极管固态等离子体解析模型

采用横向表面PiN(SPiN)二极管构造的硅基可重构天线具有众多优于传统天线的独特优势, 是实现天线小型化和提升雷达与微波通信系统性能的有效技术途径. 本文提出一种Si/Ge/Si异质横向SPiN二极管, 并基于双极扩散模型与Fletcher型边界条件, 在大注入条件下建立了二极管结电压、电流密度与本征区固态等离子体浓度分布解析模型, 并数值模拟分析了本征区长度、P⁺与N⁺区掺杂浓度、外加电压对所建模型的影响. 结果表明, 固态等离子体浓度随本征区长度的增加下降, 随外加电压的增加而指数上升, 随P⁺与N⁺区掺杂浓度的提高而上升, 电流密度随外加电压的增加而指数上升. 同等条件下, 异质SPiN二极管的固态等离子体浓度相比同质二极管提高近7倍以上. 本文所建模型为硅基可重构天线的设计与应用提供有效的参考.     

Na4Ca3(AlO2)10∶Eu2+,Mn2+荧光粉的发光特性

采用高温固相法,制得一种新型荧光粉Na₄Ca₃(AlO₂)₁₀∶Eu²⁺,Mn²⁺。样品的结构和发光性质分别由X射线衍射谱和荧光光谱来表征。在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺的激发光谱中出现了Eu²⁺的f-d跃迁吸收带;在发射光谱中,出现蓝光发射,峰值位于441 nm。当在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺中掺杂Mn²⁺时,发生了Eu²⁺→Mn²⁺的能量传递,在542 nm处出现了Mn²⁺的发射峰。在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺,Mn²⁺中,随着Mn²⁺浓度的增加,Eu²⁺粒子的发射强度减弱,而Mn²⁺粒子的发射强度增强,且Eu²⁺离子发射的衰减时间缩短,同时色度由蓝光移向白光。     

Real time observation of oxygen chemisorption states on Si(0 0 1)-2×1 during supersonic oxygen molecular beam irradiation

Employing Si 2p and O 1s photoemission spectroscopy using monochromated synchrotron radiation and the supersonic molecular beam technique, we have performed real time in situ observations of oxidation states on Si(0 0 1)-2×1 at room temperature. High-resolution Si 2p photoemission spectra, which unambiguously resolve oxide components [Si¹⁺, Si²⁺, Si³⁺ and Si⁴⁺], were successfully measured requiring only 43 s per spectrum. We found that the Si⁴⁺ species gradually increases to reach the oxide thickness of 0.57 nm just after the saturation of Si¹⁺, Si²⁺ and Si³⁺ species with a translational energy of 2.9 eV.     

Eu3+掺杂的铌酸钠钾陶瓷的制备及性能研究

采用固相烧结法制备了Eu³⁺掺杂的铌酸钠钾（KNN）陶瓷。用X射线粉末衍射仪、荧光光谱测试仪和LCR精确阻抗测试仪等对其结构、发光性能和介电性能进行表征。XRD结果显示样品为钙钛矿结构。荧光分析结果表明,致密度对KNN陶瓷材料发光性能有一定的影响,Eu³⁺掺杂量是影响其发光性能的重要因素。其中掺杂Eu摩尔分数为4%的样品在930℃焙烧后其发光最强,在396 nm紫外光激发下,发射光谱最强峰在614 nm,对应于Eu³⁺的⁵D₀-⁷F₂电偶极跃迁。样品经3 kV/cm、110℃极化30 min后进行压电性能检测,结果表明提高Eu³⁺掺杂量以及陶瓷的致密度,可改善压电性能。其中掺杂4%Eu的KNN压电常数D₃₃最大为98 pC/N,在1 kHz、100℃时,介电常数最小为217,介电损耗tanθ=0.199,且仍然保持较高的居里温度T_c=426℃。     

多孔性氟化物助熔剂制备Eu2+:(Sr,Ca) AlSiN3红色荧光粉

H-PAF （Micro-porous aluminum fluoride）是一种比表面积为20~200 m²/g的多孔性氟化物,具有熔点低、活性高等特性。在Eu²⁺：（Sr,Ca） AlSiN₃烧成工艺中作为助熔剂使用,与传统的氟化物、硼酸等助熔剂相比,可以有效增加Eu²⁺：（Sr,Ca） AlSiN₃荧光粉在合成过程中总的反应活性,降低反应温度50℃以上,并改善荧光粉的发光性能。本文以H-PAF多孔性氟化物为助熔剂,合成了Eu²⁺：（Sr,Ca） AlSiN₃荧光粉,合成温度从1 800℃降低到1 750℃,而且XRD衍射峰更尖锐,说明H-PAF的添加使晶体结晶性更好。测试了Eu²⁺：（Sr,Ca） AlSiN₃荧光粉搭配Ga-YAG绿色荧光粉制成器件后的光效。发现添加PAF后,Eu²⁺：（Sr,Ca） AlSiN₃荧光粉用粉量降低约5%,器件光通量提高2%以上。     

新型电子俘获型光存储材料Sr2SnO4:Sb3+的发光性能研究

采用高温固相法在1300℃的温度获得了一种新型电子俘获型光存储材料 Sr₂SnO₄:Sb³⁺. 结果表明: 208 nm (Sb³⁺ 的¹S₀→¹P₁)和265 nm (¹S₀→³P₁)的紫外光是Sr₂SnO₄:Sb³⁺ 的最有效信息写入光源; 其发射是覆盖400---700 nm的宽带(³P_0,1→^XXS₀), 肉眼可看到淡黄色白光, 色坐标为(0.341, 0.395). 热释光谱研究结果表明: Sr₂SnO₄:Sb³⁺ 有分别位于39℃, 124℃, 193℃和310℃的四个热释峰. 其中, 39~℃的热释峰强度很低, 因而Sr₂SnO₄:Sb³⁺ 只具有不到140 s的微弱余辉. 而310℃的高温热释峰在空置1天后, 仍能保持约45.6%的初始强度, 并对980 nm的红外光有很好的红外上转换光激励响应. 因此, Sr₂SnO₄:Sb³⁺ 是一种具有一定的信息存储应用潜力的新型光存储发光材料.