Mobility of carrier in the single-side and double-side doped square quantum wells

We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility in one-side (1S) and two-side (2S) doped square infinite quantum well. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in the 2S doped square quantum wells to that in the 1S doped counterpart with the same sheet carrier density and interface profiles. The enhancement is fixed by the sample parameters such as well width and sheet carrier density. We propose two-side doping as an efficient way to upgrade the quality of QWs. Our theory is able to well reproduce the recent experimental data about low-temperature transport of electrons and holes in one-side and two-side doped square QWs.     

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

In GaN-based green light-emitting diodes(LEDs) with and without Mg-preflow before the growth of p-Al GaN electron blocking layer(EBL) are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the(8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

Modeling and simulation of efficiency droop in GaN-based blue light-emitting diodes incorporating the effect of reduced active volume of InGaN quantum wells

The efficiency droop of InGaN-based blue light-emitting diodes (LEDs) is analyzed using numerical simulations with a modified ABC carrier recombination model. The ABC model is modified to include the effect of reduced effective active volume of InGaN quantum wells (QWs) and incorporated into the numerical simulation program. It is found that the droop of internal quantum efficiency (IQE) can be well explained by the effect of reduced light-emitting active volume without assuming a large Auger recombination coefficient. A simulated IQE curve with the modified ABC model is found to fit quite well with a measured efficiency curve of an InGaN LED sample when the effective active volume takes only 2.5% of the physical volume of QWs. The proposed numerical simulation model incorporating the reduced effective active volume can be advantageous for use in the modeling and simulation of InGaN LEDs for higher efficiency.     

量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响

使用MOCVD在图形化Si衬底上生长了含V形坑的InGaN/GaN蓝光LED。通过改变生长温度,生长了禁带宽度稍大的载流子限制阱和禁带宽度稍小的发光阱,研究了两类量子阱组合对含V形坑InG aN/GaN基蓝光LED效率衰减的影响。使用高分辨率X射线衍射仪和LED电致发光测试系统对LED外延结构和LED光电性能进行了表征。结果表明:限制阱靠近n层、发光阱靠近p层的新型量子阱结构,在室温75 A/cm~2时的外量子效率相对于其最高点仅衰减12.7%,明显优于其他量子阱结构的16.3%、16.0%、28.4%效率衰减,且只有这种结构在低温时(T≤150 K)未出现内量子效率随电流增大而剧烈衰减的现象。结果表明,合理的量子阱结构设计能够显著提高电子空穴在含V形坑量子阱中的有效交叠,促进载流子在阱间交互,提高载流子匹配度,抑制电子泄漏,从而减缓效率衰减、提升器件光电性能。     

Modeling and analysis of the effects of inhomogeneous carrier distributions in InGaN multiple quantum wells

It is well known that carrier distribution in InGaN multiple quantum wells (MQWs) can be significantly inhomogeneous. However, the conventional ABC recombination model assumes that carriers are uniformly distributed throughout the MQW. In this paper, a modified ABC model that considers the unequal carrier density in the QWs was developed. From the analysis of the developed ABC model, the effective recombination coefficients and modified internal quantum efficiency (IQE) were obtained for an arbitrary carrier distribution in MQWs. The efficiency droop was found to be aggravated as the carrier distribution was increasingly inhomogeneous. However, it was also found that the effect of inhomogeneous carrier distribution alone was not sufficient to explain the IQE droop with the theoretical Auger recombination coefficient based on indirect Auger processes. The developed ABC model is expected to provide insight into the influence of inhomogeneous carrier distributions in MQWs on the efficiency droop in GaN-based light-emitting diodes.     

Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells

Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs areproposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs).Emission spectra, carrier concentration, electron current density, and internal quantum efficiency (IQE)are studied numerically. Simulation results show that the efficiency droop and the spectrum intensityat the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when aspecific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection efficiency could be one of the main reasons for these improvements.     

不同掺杂类型的GaN间隔层和量子阱垒层对双波长LED作用的研究

采用软件理论分析的方法对不同掺杂类型的GaN间隔层和量子阱垒层在InGaN/GaN多量子阱双波长发光二极管中对发光光强、内量子效率、电子空穴浓度分布、溢出电流等作用进行模拟分析. 分析结果表明,p型掺杂的GaN间隔层与量子阱垒层的引入同不掺杂和n型掺杂两种类型比较,可以大大减少溢出电子流,极大地提高各量子阱内空穴浓度,提高双波长发光二极管的发光强度,极大的改善内量子效率随电流增大而下降问题. 关键词： GaN 掺杂类型 数值模拟 双波长发光二极管     

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

Gallium nitride(Ga N) based light-emitting diodes(LEDs) with chirped multiple quantum well(MQW) structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells(QWs), LEDs with chirped MQW structures have better internal quantum efficiency(IQE) and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 m A/mm2,reduced down from 28.6%(conventional uniform LEDs) to 23.7%(chirped MQWs-a) and 18.6%(chirped MQWs-b),respectively. Meanwhile, the peak IQE increases from 76.9%(uniform LEDs) to 83.7%(chirped MQWs-a) and 88.6%(chirped MQWs-b). The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.     

Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers

The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InAlN electron blocking layer (EBL) are studied. The emission spectra,carrier concentration in the quantum wells (QWs),energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InAlN EBL performs better over a conventional LED with an AlGaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.     

A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

A strain-compensated InGaN quantum well(QW) active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode(LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.     

图形化蓝宝石衬底上InGaN/GaN多量子阱发光二极管的光谱特性研究

运用电致发光(EL)和光致发光(PL)实验,分析了图形化蓝宝石衬底(PSSLEDs)和常规平面蓝宝石衬底(C-LEDs)InGaN/GaN多量子阱发光二极管的光谱特性。对比EL谱,发现PSSLEDs拥有更强的光功率和更窄的半峰宽(FWHM),说明PSSLEDs具有较高的晶体质量。其次,PSSLEDs的EL谱半峰宽随电流增加出现了更快的展宽,而这两种LED样品的PL谱半峰宽随激光功率增加呈现了基本相同的展宽变化,说明在相同电流下,PSSLEDs量子阱中载流子浓度更高,能带填充效应更强。另外,随着电流的增加,PSSLEDs和C-LEDs的峰值波长都发生蓝移,且前者的蓝移程度较小,结合半峰宽的对比分析,说明PSSLEDs量子阱中的极化电场较小。最后,对比了PSSLEDs和C-LEDs的外量子效率随电流的变化,发现PSSLEDs拥有更严重的efficiency droop,说明量子阱中极化电场不是导致efficiency droop的主要原因。     

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied.It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power,lower current leakage,and less efficiency droop over its conventional InGaN/GaN counterparts.Based on the numerical simulation and analysis,these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells(QWs) when the InGaN/GaN multilayer barriers are used.     

Ir配合物染料调节有机发光二极管发光特性

为了研究有机发光二极管(OLED)中发光特性与材料能带结构的关系,把不同的Ir配合物染料掺杂到结构相同的OLED器件中。OLED结构为ITO/NPB/CBP∶染料/TPBi/Mg∶Ag/Ag,染料分别为Ir(MDQ)2(acac)、Ir(ppy)3和Firpic。实验表明,这3种染料对应的掺杂器件分别发红光、绿光和蓝光。3个器件的阈值电压基本一致((6为了研究有机发光二极管(OLED)中发光特性与材料能带结构的关系,把不同的Ir配合物染料掺杂到结构相同的OLED器件中。OLED结构为ITO/NPB/CBP:染料/TPBi/Mg:Ag/Ag,染料分别为Ir(MDQ)₂(acac)、Ir(ppy)₃和Firpic。实验表明,这3种染料对应的掺杂器件分别发红光、绿光和蓝光。3个器件的阈值电压基本一致((6±0.1) V),但是,在100 cd/m²亮度下,绿光器件外量子效率最高(7.64%),蓝光器件外量子效率(5.65%)与绿光相近,红光器件外量子效率最低(2.75%)。分析认为,由于染料的掺杂浓度低,器件结构和载流子传输特性变化小,因而掺杂对阈值电压影响小;CBP与掺杂染料间存在能量转移,红色染料能级差小,非辐射跃迁几率大,发光效率最低;相比于绿光,蓝色染料能级差大,跃迁几率小,因此发光效率比绿光低。实验还发现,染料的发光波长与其能级差相比有红移现象,分析认为,这是由激发态能量振动弛豫和系间窜越过程形成的。     

Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

Strain-compensated InGaN quantum well (QW) active region employing tensile AlGaN barrier is analyzed. Its spectral stability and efficiency droop for dual-blue light-emitting diode (LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LED based on stacking structure of two In_0.18Ga_0.82N/GaN QWs and two In_0.12Ga_0.88N/GaN QWs on the same sapphire substrate. It is found that the optimal performance is achieved when the Al composition of strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW. The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW that can provide a better carrier confinement and effectively reduce leakage current.     

Sb、Ce掺杂Mg2Ge的第一性原理研究

此文用基于密度泛函理论(DFT)的第一性原理赝势平面波方法系统的计算了Sb、Ce掺杂Mg₂Ge的能带结构、态密度以及光学性质,获得了Mg₂Ge掺杂Sb后,费米面进入导带,呈现n型导电;Mg₂Ge掺杂Ce后,上自旋电子在费米能级附近处的价带和导带有一部分重叠,呈现半金属特性,进入导带电子数目增多,导电性增强. Sb、Ce掺杂Mg₂Ge后,其主要吸收峰都小于未掺杂Mg₂Ge,在可见光区域的透过率增大;Sb掺入后,在能量低于2.6 eV反射谱出现红移,Ce掺入后Mg₂Ge的吸收范围明显宽于本征Mg₂Ge;掺杂改善了Mg₂Ge对红外光子的吸收等有益结果.     

Effect of temperature and magnetic field on disorder in semiconductor structures

We present the results of consistent theoretical analysis of various factors that may lead to influence of temperature and external magnetic field on disorder in semiconductor structures. Main attention is paid to quantum well (QW) structures in which only QWs or both QW and barriers are doped (the doping level is assumed to be close to the value corresponding to the metal–insulator transition). The above factors include (i) ionization of localized states to the region of delocalized states above the mobility edge, which is presumed to exist in the impurity band; (ii) the coexistence in the upper and lower Hubbard bands (upon doping of QWs as well as barriers); in this case, in particular, the external magnetic field determines the relative contribution of the upper Hubbard band due to spin correlations at doubly filled sites; and (iii) the contribution of the exchange interaction at pairs of sites, in which the external magnetic field can affect the relation between ferromagnetic and antiferromagnetic configurations. All these factors, which affect the structure and degree of disorder, lead to specific features in the temperature dependence of resistivity and determine specific features of the magnetoresistance. Our conclusions are compared with available experimental data.     

Influences of Al doping on the electronic structure of Mg(0001) and dissociation properties of H2

By using the density functional theory method, we systematically study the effects of the doping of an Al atom on the electronic structures of the Mg(0001) surface and on the dissociation behaviors of H₂ molecules. We find that for the Al-doped surfaces, the surface relaxation around the doping layer changes from expansion of a clean Mg(0001) surface to contraction, due to the redistribution of electrons. After doping, the work function is enlarged, and the electronic states around the Fermi energy have a major distribution around the doping layer. For the dissociation of H₂ molecules, we find that the energy barrier is enlarged for the doped surfaces. In particular, when the Al atom is doped at the first layer, the energy barrier is enlarged by 0.30 eV. For different doping lengths, however, the dissociation energy barrier decreases slowly to the value on a clean Mg(0001) surface when the doping layer is far away from the top surface. Our results well describe the electronic changes after Al doping for the Mg(0001) surface, and reveal some possible mechanisms for improving the resistance to corrosion of the Mg(0001) surface by doping of Al atoms.     

SiGe/Si多量子阱中的光致子带间吸收研究

本文论述了硅锗量子阱中的光致子带间吸收的机理,并在实验中探测SiGe/Si量子阱价带间的红外光致吸收.载流子由氩离子激光器作为光泵浦源产生,所导致的红外吸收由一个步进式傅里叶变换光谱仪来探测.在硅锗量子阱中的光致吸收有两个来源:类似单一掺杂的SiGe薄层的体吸收的自由载流子吸收,及量子阱价带的子带间吸收.实验探测了TE和TM偏振方向的吸收.TM偏振方向的吸收是由偏离布里渊带中心的载流子的跃迁所造成的.我们认为这种光致吸收技术在研究价带耦合效应及其对子带间吸收的影响是非常有效的.     

纤锌矿结构ZnO/Mg_xZn_(1-x)O量子阱中带间光吸收的尺寸效应和三元混晶效应

对于纤锌矿结构ZnO/MgxZn1-xO有限深单量子阱结构,考虑内建电场、导带弯曲及材料掺杂对实际异质结势的影响,利用有限差分法和自洽法数值求解Schr?dinger方程和Poisson方程,获得电子(空穴)的本征能级和本征波函数.进而,采用费米黄金法则讨论带间光吸收的尺寸效应和三元混晶效应.结果表明:三元混晶材料MgxZn1-xO中Mg组分的增加会增强垒层和阱层的内建电场强度,使得电子(空穴)平均位置靠近左(右)垒,导致带间跃迁吸收峰呈指数减小且发生蓝移;ZnO/MgxZn1-xO量子阱带间跃迁吸收峰随阱宽增大而减小,吸收峰发生红移.所得结果可为改善异质结构材料和器件的光电性能提供理论指导,以期获得实际应用所需的光学吸收频谱和波长.