磁性半导体/磁性d波超导结中的自旋极化输运

通过求解磁性d波超导中的能隙与磁交换能的自恰方程,利用推广的Blonder-Tinkham-Klapwijk 理论研究磁性半导体/磁性d波超导结中自旋极化准粒子输运系数与微分电导. 计算表明： 1) 磁性d波超导结中的磁交换能h₀可导致零偏压电导峰与能隙电导峰劈裂,劈裂的宽度为2h₀;2) 磁性半导体中的磁交换能h_FS可使零偏压电导峰劈裂的峰值变低. 而由能隙电导峰劈裂的两个子峰,当两种磁性材料的磁 关键词： 磁性半导体 磁性d波超导体 自旋极化输运     

Spin-valley Hall conductivity of doped ferromagnetic silicene under strain

The spin-valley Hall conductivity(SHC-VHC) of two-dimensional material ferromagnetic graphene's silicon analog,silicene, is investigated in the presence of strain within the Kubo formalism in the context of the Kane–Mele Hamiltonian.The Dirac cone approximation has been used to investigate the dynamics of carriers under the strain along the armchair(AC) direction. In particular, we study the effect of external static electric field on these conductivities under the strain.In the presence of the strain, the carriers have a larger effective mass and the transport decreases. Our findings show that SHC changes with respect to the direction of the applied electric field symmetrically while VHC increases independently.Furthermore, the reflection symmetry of the structure has been broken with the electric field and a phase transition occurs to topological insulator for strained ferromagnetic silicene. A critical strain is found in the presence of the electric field around 45%. SHC(VHC) decreases(increases) for strains smaller than this value symmetrically while it increases(decreases) for strains larger than one.     

Quantum transport through a Z-shaped silicene nanoribbon

In this work,the electronic transport properties of Z-shaped silicene nanoribbon(ZsSiNR) structure are investigated.The calculations are based on the tight-binding model and Green's function method in Landauer-Biittiker formalism,in which the electronic density of states(DOS),transmission probability,and current-voltage characteristics of the system are calculated,numerically.It is shown that the geometry of the ZsSiNR structure can play an important role to control the electron transport through the system.It is observed that the intensity of electron localization at the edges of the ZsSiNR decreases with the increase of the spin-orbit interaction(SOI) strength.Also,the semiconductor to metallic transition occurs by increasing the SOI strength.The present theoretical results may be useful to design silicene-based devices in nanoelectronics.     

Valley-dependent electron transport in ferromagnetic/normal/ferromagnetic silicene junction

The electron transport through ferromagnetic/normal/ferromagnetic silicene junction with an induced energy gap is investigated in this work. The energy gap can be tuned by applying electric field or exchange fields due to the buckled structure of silicene. We analyze the local electric field, exchange field, length of normal region-dependence transmission probabilities of four groups and valley conductance. These transmission probabilities and valley conductance can be turned on or off by adjusting the local electric field and exchange field. In particular, a fully valley polarized conductance with 80% transmission is found in this junction, which can be caused by the interplay of valley-dependent massive Dirac electron, the exchange potential and the on-site potential difference of sublattices. Our findings will benefit applications in silicene-based high performance nano-electronics.     

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene.In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance(TMR) effect.The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.     

Electronic transport through a quantum ring coupled to ferromagnetic leads

We study the spin-dependent transport through a one-dimensional quantum ring with taking both the Rashba spin--orbit coupling (RSOC) and ferromagnetic leads into consideration. The linear conductance is obtained by the Green's function method. We find that due to the quantum interference effect arising from the RSOC-induced spin precession phase and the difference in travelling phase between the two arms of the ring, the conductance becomes spin-polarized even in the antiparallel magnetic configuration of the two leads, which is different from the case in single conduction channel system. The linear conductance, the spin polarization and the tunnel magnetoresistance are periodic functions of the two phases, and can be efficiently tuned by the structure parameters.     

Percolative transport in the vicinity of charge-order ferromagnetic transition in a hole-doped manganite

We report measurements of non-linear charge transport in epitaxial (La_1−x Pr _x )_0.7Ca_0.3MnO₃ thin films fabricated on (100) oriented SrTiO₃ single crystals by pulsed laser deposition. The end members of this series, namely Pr_0.7Ca_0.3MnO₃ and La_0.7Ca_0.3MnO₃ are canonical charge-ordered (CO) and ferromagnetic manganites, respectively. The onset of the CO state in Pr_0.7Ca_0.3MnO₃ is manifested by a pronounced insulating behavior below ∼ 200 K. The CO state remains stable even when a large (∼ 2×10⁵ V/cm) electric field is applied across the thin film samples. However, on substitution of Pr with La, a crossover from the highly resistive CO state to a state of metallic character is observed at relatively low electric fields. The current-voltage characteristics of the samples at low temperatures show hysteretic and history dependent effects. The electric field driven charge transport in the system is modelled on the basis of an inhomogeneous medium consisting of ferromagnetic metallic clusters dispersed in a CO background.     

Charge transport through a flexible molecular junction

Vibrationally inelastic electron transport through a flexible molecular junction is investigated. The study is based on a mechanistic model for a biphenyl molecule between two metal electrodes. Employing methods from electron-molecule scattering theory, which allow a numerically exact treatment, we study the effect of vibrational excitation on the transmission probability for different parameter regimes. The current-voltage characteristic is analyzed for different temperatures, based on a Landauer-type formula. Furthermore, the process of electron assisted tunneling between adjacent wells in the torsional potential of the molecule is discussed and the validity of approximate methods to describe the transmission probability is investigated.This paper is dedicated to Jií Horaáek our friend and scientific mentor of one of us (M)on the occasion of his sixtieth birthday.     

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利用调制送气过程中观察到的冷脉冲传播,研究了在HL-2A装置欧姆放电条件下的电子热输运。从扰动输运方程出发,分析了电子热输运过程,利用在实验中获得的数据,进行了曲线拟合和数值计算,得到了在HL-2A装置欧姆放电条件下强场侧电子热输运系数的分布特征为χ=15-14(1-r2)2m2.s-1。     

HT-7托卡马克等离子体密度调制实验中的逃逸电子行为

在HT-7托卡马克的等离子体密度调制实验中,通过对欧姆和低杂波电流驱动两种放电条件下等离子体逃逸电子辐射行为的研究,验证了非准稳态等离子体中逃逸电子的产生机制,研究了欧姆和低杂波电流驱动两种放电条件下的大量充气对等离子体整体约束性能的影响。研究结果发现：放电过程中额外的大量工作气体的充入使等离子体偏离了准稳态,逃逸电子初级产生机制和次级产生机制准稳态的假设条件被打破,这时候需要利用非准稳态条件下修正后的逃逸电子归一化阈值速度来解释逃逸电子的辐射行为; 同时也发现放电过程中额外的大量工作气体的充入将使等离子体的整体约束性能变差。     

速度算符和电子的颤动

指出了国外某些量子力学教材中关于速度算符的概念错误和相对论自由电子进行颤动的错误,分析了错误的原因.     

单电子在含有双能级原子的空腔中的输运行为

本文构造了一个含有双能级原子的空腔系统,用来模拟一个含有双能级量子点的微腔系统, 并研究其对电子输运行为的影响.通过对该系统输运方程的求解,给出了系统输运系数的具体表达式,然后通过调整空腔及原子的本征特性以及两者的耦合性质,研究了电子在腔体中的输运行为对腔体本征属性的依赖关系. 这些结果可以为如何操控电子在微观结构器件中的输运特性提供一定的理论支持.     

Free electron laser spectral dynamics with a modulation of electron beam energy

Recent experimental and theoretical works on free electron laser spectral dynamics have pointed out the difficulty to obtain a narrow and stable spectrum operation. This goal can only be achieved by avoiding the sideband generation leading to a broadband and unstable spectrum. Tapered wiggler and two-frequency wiggler are well suited for combining sharp spectrum and high efficiency but are not really compatible with a wide tunability of laser light. Filtering sidebands is a good way for lower power experiments but it seems to be difficult to conceive wideband filters, specially in the far-infrared region. Modulation of electron energy is a new potential soft way for controlling the spectral dynamics of longpulse free electron laser. Spectral dynamics under the modulation is investigated in the linear and non-linear regimes in the far-infrared region. Simulations show that a pulsed and sharp spectrum behavior can be obtained by optimizing the modulation parameters. The interest of such a method for the far-infrared experiments is discussed.     

Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Transport properties on the surface of a topological insulator （TI） under the modulation of a two-dimensional （2D） ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ 0 〈π/2 and r/2 〈 0 ≤ π, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.     

铁磁非铁磁夹层中电子自旋波的传输及应用

建立了有限对一维铁磁性和非磁性层交错组成的周期系统, 应用布洛赫自旋波量子理论, 研究了该系统的基本性质及电子波函数散射特征对交错层数量依赖的关系. 研究发现: 在系统中电子波函数可表示为无限周期系统中转换矩阵特征向量的叠加或类布洛赫函数, 解此函数可得到任意层数系统的单色波散射的精确解. 在此基础上, 导出了电子波函数在周期系统中反射系数和透射系数对能量的依赖关系. 对光谱窗口的计算发现其势能和宽度几乎与全反射区域一样. 该系统由于高能量的传输和在电子自旋方向上对交换能的依赖而可能用于自旋滤波器. 关键词： 磁性多层膜 铁磁性和非磁性结构 电子散射 电子自旋滤波器     

Directed transport and complex dynamics of vortices in a Josephson junction network driven by modulated currents

Directed transport of vortices in a Josephson junction network (JJN) with structural disorder is studied using a numerical simulation. Using spatiotemporal modulation of driving currents, the directed transport of vortices occurs even in the presence of disorder under certain conditions. From the analyses of the current–voltage and local voltage characteristics, it is found that the collective motion of vortices has an importance for the occurrence of directed transport.     

Rotation of ferromagnetic clusters induced magnetoresistance in the junction composed of La0.9Ca0.1MnO3 +δ and 1 wt.% Nb-doped SrTiO3

A junction composed of ultrathin La0.9Ca0.1MnO3＋δ （LCMO） film and 1 wt.% Nb-doped SrTiO3 was fabricated and its magnetoresistance （MR） was studied and compared with LCMO film. It was found that the resistance of the junction has a similar dependence on magnetic field as that of the LCMO film： the curvature of R-H curves is upward above Curie temperature （Tc） and downward below TC. These behaviours strongly suggest that the rotation of ferromagnetic clusters in manganite also causes MR in the corresponding junction. This MR can be qualitatively understood by the change of the width of the barrier induced by the rotation of ferromagnetic clusters. These results suggest a possibility to obtain junctions with large low-field MR.     

Si4团簇电子输运性质的第一性原理计算

采用密度泛函理论和非平衡格林函数相结合的方法对Si₄ 团簇与Au(100)电极空位相连的纳米结点的电子输运性质进行了理论模拟计算, 得到了纳米结点在不同距离下的几何结构、电子结构、电导、透射谱、电荷转移量; 讨论了当距离d_z=12.004 Å时纳米结点的电导、电流随电压的变化关系. 关键词： 密度泛函理论 非平衡格林函数 4团簇')" href="#">Si₄团簇 电子输运     

Impact of Phosphorus superlattices on charge and spin dependent transport properties of zigzag silicene nanoribbons

To investigate charge and spin dependent conductance properties of Phosphorus doped zigzag silicene nanoribbons (ZSiNRs), we utilize recursive Green's function method and Landauer-Büttiker formalism. Our calculations are performed in the absence and presence of exchange magnetic fields with both parallel and antiparallel configurations. Considering a supperlattice of Phosphorus substituents in a periodic distribution at the edge of nanoribbon, the effect of increasing number of dopants and period of the distribution on transport properties are studied. It is found that transport properties of doped ZSiNRs vary with doping concentration according to being odd or even of number of dopants. For parallel configuration, doped ZSiNR with various concentrations works as a controllable spin filter with Fermi energy. Increasing doping concentration leads to increasing size of conductance gap and improvement of controlling quality of spin-filtering property while increasing period of Phosphorus atomic distribution has destructive effect on size of conductance gap and destroys spin-filtering property. Moreover, we show that although the same results are obtained for transport properties of doped ZSiNR with various concentrations of Phosphorus atoms in presence of antiparallel exchange magnetic fields, a completely controllable spin-filtering property cannot be achieved by Fermi energy changes.