选择性埋氧层上硅器件的单粒子瞬态响应的温度相关性

本文建立了90 nm工艺下的绝缘体上硅浮体器件和选择性埋氧层上硅器件模型,通过器件电路混合仿真探究了工作温度对上述两种结构的多级反相器链单粒子瞬态脉冲宽度以及器件内部电荷收集过程的影响.研究表明, N型选择性埋氧层上硅器件相较于浮体器件具有更好的抗单粒子能力,但P型选择性埋氧层上硅器件的抗单粒子能力在高线性能量转移值下与浮体器件基本相同.同时电荷收集的温度相关性分析表明,N型选择性埋氧层上硅器件只存在漂移扩散过程,当温度升高时其电荷收集量变化很小,而N型浮体器件存在双极放大过程,电荷收集量随着温度的升高而显著增加;另外, P型选择性埋氧层上硅器件和浮体器件均存在双极放大过程,当温度升高时P型选择性埋氧层上硅器件衬底中的双极放大过程越来越严重,由于局部埋氧层的存在,反而抑制了其源极的双极放大过程,导致它的电荷收集量要明显少于P型浮体器件.因此选择性埋氧层上硅器件比浮体器件更好地抑制了温度对单粒子瞬态脉冲的影响.     

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

In this work, we use a 3-nm-thick Al_(0.64)In_(0.36)N back-barrier layer in In_(0.17)Al_(0.83) N/Ga N high-electron mobility transistor(HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al_(0.64)In_(0.36) N back-barrier on the direct-current(DC) and radio-frequency(RF) characteristics of In AlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al_(0.64)In_(0.36) N back-barrier and no parasitic electron channel is formed. Comparing with the conventional In AlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect(SCE) for gate length decreasing down to 60 nm(9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency( f_T) and power gain cut-off frequency( f_(max)) of the back-barrier HEMT are172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.     

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF(radio frequency)output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.     

Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs

The T-gate stem height of In Al As/In Ga As In P-based high electron mobility transistor(HEMT) is increased from165 nm to 250 nm. The influences of increasing the gate stem height on the direct current(DC) and radio frequency(RF)performances of device are investigated. A 120-nm-long gate, 250-nm-high gate stem device exhibits a higher threshold voltage(Vth) of 60 m V than a 120-nm-long gate devices with a short gate stem, caused by more Pt distributions on the gate foot edges of the high Ti/Pt/Au gate. The Pt distribution in Schottky contact metal is found to increase with the gate stem height or the gate length increasing, and thus enhancing the Schottky barrier height and expanding the gate length,which can be due to the increased internal tensile stress of Pt. The more Pt distributions for the high gate stem device also lead to more obvious Pt sinking, which reduces the distance between the gate and the In Ga As channel so that the transconductance(gm) of the high gate stem device is 70 m S/mm larger than that of the short stem device. As for the RF performances,the gate extrinsic parasitic capacitance decreases and the intrinsic transconductance increases after the gate stem height has been increased, so the RF performances of device are obviously improved. The high gate stem device yields a maximum ft of 270 GHz and fmax of 460 GHz, while the short gate stem device has a maximum ft of 240 GHz and the fmax of 370 GHz.     

A Fixed Tuned Low Noise 600-700 GHz SIS Receiver

We have designed and fabricated a fixed tuned low noise 600-700 GHz SIS mixer. Twin junctions connected in parallel was employed in the mixer design. A short microstrip tuning structure was used to minimize the RF signal loss at frequency above the energy gap. A receiver noise temperature below 200 K (without any loss correction) in the frequency range of 630 to 660 GHz was recorded. The lowest noise temperature of the receiver was 181 K (without any loss correction) at 656 GHz.     

Physics‐based modeling and microwave characterization of graphene co‐planar waveguides

In this study, large area mono‐, bi‐, and multi‐layer graphenes (MLG) were synthesized using low pressure chemical vapor deposition (LPCVD) process and co‐planar waveguides (CPW) with graphenes being fabricated using conventional photolithography. The intrinsic room temperature radio frequency (RF) characteristics were measured via direct contact to the graphene surface with a probe–tip in the range of 0.1 GHz to 40 GHz without using metal electrodes. The device characteristics were also evaluated by physics‐based RLC equivalent circuit simulation. The proposed equivalent circuit model reproduced all of the measured characteristics within 3% of RMSE and we numerically extracted the set of component values which minimize the error between the measured data and the simulation results over the measured regime. Our findings demonstrate that MLG is an effective candidate in RF interconnect device applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Silicon oscillistor as a thermometer with frequency output

We present experimental results for a silicon thermometer (p⁺-p-n⁺ device placed between the poles of a permanent magnet) with a frequency output. Measurements were made for temperatures in the range 77–335 K. When the temperature increases from 77 K to 335 K the device sensitivity decreases from 40 kHz/K to 3.1 kHz/K for a pulsed operating voltage of 65 V. The device sensitivity can be controlled through the operating voltage. We analyze the basic properties of thermometer element using the theory of the bulk helical instability of the semiconductor plasma. We compare its performance parameters with those of previously known devices with frequency outputs.V. D. Kuznetsov Siberian Physico-technical Institute at Tomsk University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 48–53, February, 1995.     

射频爆磁压缩发生器小型化共形天线

射频爆磁压缩发生器作为一次性电磁脉冲产生和辐射的小型化装置,其辐射天线的结构和性能是其在实用化层面亟待突破的瓶颈。针对这一问题,深入研究了射频爆磁压缩发生器产生和辐射电磁脉冲的机理,并在此基础上,提出了一种适于实际需求的射频爆磁压缩发生器小型化共形天线。此共形天线设计成爆磁压缩发生器本体的一部分,在结构方面保证了该装置的小型化和实用性。CST仿真和实物测试结果表明,此共形天线在0.5 GHz到10.3 GHz的频带上具有良好的辐射特性,在辐射性能方面同样可以满足射频爆磁压缩发生器实用性的需求。     

Development and Performance Analysis of a Photonics-Assisted RF Converter for 5G Applications

This article presents a simple, ultra-wideband and tunable radiofrequency (RF) converter for 5G cellular networks. The proposed optoelectronic device performs broadband photonics-assisted upconversion and downconversion using a single optical modulator. Experimental results demonstrate RF conversion from DC to millimeter waves, including 28 and 38 GHz that are potential frequency bands for 5G applications. Narrow linewidth and low phase noise characteristics are observed in all generated RF carriers. An experimental digital performance analysis using different modulation schemes illustrates the applicability of the proposed photonics-based device in reconfigurable optical wireless communications.     

Low noise completely quasioptical SIS receiver for radioastronomy at 115 GHZ

Completely quasioptical heterodyne SIS receiver for radioastronomical applications at 115 GHz was designed and tested. Gaussian beam two lens input guide system and open structure SIS mixer with immersion lens were used. Integrated quasioptical structure consists of planar equiangular spiral antenna and superconductor—insulator—superconductor (SIS) tunnel junction as a mixing element connected to the antenna via microstrip impedance transformer. The best SIS mixer noise temperature at hot input and for heterodyne frequency 109.8 GHz with IF central frequency 1.4 GHz (DSB) was 28±7 K at the first quasiparticle step and 8±6 K at the second step.     

MgO衬底上YBa2Cu3O7-δ台阶边沿型约瑟夫森结的制备及特性

MgO衬底上的YBa2Cu3O7-δ(YBCO)台阶边沿型约瑟夫森结(台阶结)在高灵敏度高温超导量子干涉器(superconducting quantum interference device,SQUID)等超导器件研制方面具有重要的应用价值和前景.本文对此类YBCO台阶结的制备和特性进行了研究.首先利用离子束刻蚀技术和两步刻蚀法在MgO(100)衬底上制备陡度合适、边沿整齐的台阶,然后利用脉冲激光沉积法在衬底上生长YBCO超导薄膜,进而利用紫外光刻制备出YBCO台阶结.在结样品的电阻-温度转变曲线中,观测到低于超导转变温度时的电阻拖尾现象,与约瑟夫森结的热激活相位滑移理论一致.伏安特性曲线测量表明结的行为符合电阻分路结模型,在超导转变温度TC附近结的约瑟夫森临界电流密度TC随温度T呈现出(TC-T)^2的变化规律,77 K时JC值为1.4×10^5 A/cm^2.利用制备的台阶结,初步制备了YBCO射频高温超导SQUID,器件测试观察到良好的三角波电压调制曲线,温度77 K、频率1 kHz时的磁通噪声为250μΦ0/Hz^1/2.本文结果为进一步利用MgO衬底YBCO台阶结研制高性能的高温超导SQUID等超导器件奠定了基础.     

A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

The product of the cutoff frequency and breakdown voltage( fT×BVCEO) is an important figure of merit(FOM) to characterize overall performance of heterojunction bipolar transistor(HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator(SOI) Si Ge HBT to simultaneously improve the FOM of fT×BVCEOand thermal stability is presented by using two-dimensional(2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness(TBOX) on fT, BVCEO, and the FOM of fT×BVCEOare presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEOto some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT,BVCEO, and the FOM of fT×BVCEOcan be improved by increasing SOI insulator Si O_2 layer thickness TBOXin SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of Si O_2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEOis improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer into collector region provides an effective method to improve SOI Si Ge HBT overall performance.     

Synthesis of hexagonal boron nitride thin film on Pt substrates for resistive switching memory applications

Hexagonal boron nitride (hBN), due to its high reliability as a two-dimensional (2D) dielectric material, has attracted much attention for its potential applications in nanoelectronic devices. Here, the use of radio frequency (RF) magnetron sputtering-grown hBN films to construct hBN-based resistive switching (RS) memory device is reported, and the RS mechanism is deduced. The hBN-based RS memory shows low operating voltage, reproducible write cycles, and long retention time. First-principles simulations further confirm the resistive switching. This work provides an important case to facilitate the future applications of 2D materials in the RS memory.     

A 345GHz SIS receiver for radio astronomy

A 345GHz superconductor insulator superconductor (SIS) tunnel junction receiver utilizing a full height rectangular waveguide mixer with two tuning elements, i.e. an E-plane and backshort tuner, has been constructed and installed on the Caltech Submillimeter Observatory 10m antenna on Mauna Kea, Hawaii. The receiver exhibits a best double side-band noise temperature response of 150K±20K (averaged over a 500 MHz IF bandwidth centered at 1.5GHz) at a design center frequency of 345GHz and at an ambient temperature of approximately 3.8K. Additional measurements show that the receiver has an excellent response at selected points within an RF input range of 280 to 363GHz.     

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_0.7Ga_0.3As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.     

Optimized design of quasi-optical source-array of solid state source power combiner at frequency 100 GHz

It is determined for the structure of the source-array located in inner surface of input quasi-optical resonator operating at frequency 100GHz using Type WT5731 GaAs Gunn diodes made in P.R. China (fundamental frequency 50 GHz). An adaptable phase coupling has been achieved and RF output power exceeded the sum of the individual diode outputs by from three to seven times.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

准两腔振荡器的理论和实验研究

根据两腔振荡器和返波管的特点提出了准两腔振荡器，其作用机理是两腔振荡器的机理，结构类似返波管.这种结构主要由调制腔组和换能腔组两部分组成，调制腔组实现电子束速度调制，调制后的电子束在通过一个微波场较弱的区间时实现电子束群聚，然后在换能腔组实现电子能量到微波能量的转化，并通过输出结构输出；同时，调制腔组和换能腔组之间存在微波耦合，换能腔组中的一部分微波能量可以耦合到调制腔组，形成一个正反馈回路，在一定条件下实现微波振荡.根据此理论，根据Sinus-700加速器的参数(800 kV，10 kA)设计了一个X波段的高功率微波器件，2.5维Particle in Cell (PIC)程序模拟的效率为28%，微波频率为9.42GHz，微波输出功率为2.25GW，实验上得到的微波输出为微波频率9.40GHz，微波输出功率2.44GW. 关键词： 两腔振荡器 返波管 多波切仑可夫微波器件     

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator(SOI) metaloxide-silicon(MOS) field-effect-transistors(FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.     

Design studies on a 500 kV DC gun photo-injector for the BXERL test facility

BXERL is a proposal for a test facility (Beijing X-ray Energy Recovery Linac), which requires its injector to provide an electron beam of 5 MeV, 77 pC/ bunch at a repetition rate of 130 MHz (average current of 10 mA). In this paper, we present the design of the injector, which consists of a 500 kV photocathode DC gun equipped with a GaAs cathode preparation device, a 1.3 GHz normal conducting RF buncher, two solenoids, and one cryomodule containing two 1.3 GHz 2-cell superconducting RF cavities as the energy booster. The detailed beam dynamics show that the injector can generate electron bunches with a RMS normalized emittance of 1.49 πmm·mrad, a bunch length of 0.67 mm, a beam energy of 5 MeV and an energy spread of 0.72%.