Band alignment between NiO_x and nonpolar/semipolar GaN planes for selective-area-doped termination structure

Band alignment between NiO_x and nonpolar GaN plane and between NiO_x and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiO_x/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiO_x films. By fitting the Ga 3 d spectrum obtained from the NiO_x/GaN interface, we find that relatively high Ga–O content at the interface corresponds to a small band offset. On the one hand, the high Ga–O content on the GaN surface will change the growth mode of NiO_x. On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.     

Nonergodicity and dynamical approach to the anharmonic oscillator

General lower bounds for the time average C^AA(∞)≡lim_T→∞(1/T)∝^T₀ C^AA(t) dt of the correlation C^AA(t)≡A(t)A(0)−A² of an arbitrary variable A are derived, which depend only on the temperature derivatives of the canonical averages of A and the Hamiltonian of the system. The bounds may be used to give good estimations for C^AA(∞) which is different from zero when A is nonergodic. It is important to take care of these terms when dynamical theories made for interacting systems are applied to isolated systems. We show explicitely that our recently developed dynamical approach to phonon systems with quartic anharmonicity yields excellent results for the corresponding isolated system, the anharmonic single well oscillator, when nonvanishing time averages are taken into account.     

Entropy of planar random surfaces on the lattice

We study planar random surfaces on a hypercubic lattice in two and three dimensions by Monte Carlo techniques. Our data are consistent with the formula n₀(A;C) A^b₀A, where n₀(A;C) is the number of planar random surfaces with area A and boundary C. We find b₀ = −1.4 ± 0.2, = 5.31 ± 0.03 (for d = 2) and b₀ = −1.5 ± 0.2, = 7.13 ± 0.05 (for d = 3). The values of b₀ disagree with those obtained from the Polyakov string model.     

水溶液中稀土离子与甘氨酸、丝氨酸、天冬氨酸作用的13C NMR研究

测定了酸性水溶液中甘氨酸、丝氨酸和天冬氨酸稀土络合物(Ln=La、Pr、Nd、Eu、Tb、Dy、Ho、Er、Tm和Yb)的¹³C诱导位移。对位移试剂的分析指出,三种氨基酸通过α-羧基以双齿形式配位于稀土,配位键长为0.23nm~0.25nm,天冬氨酸的γ-羧基也是配位基团。由本文与文献中已报道的各种氨基酸稀土络合物的¹³C诱导位移的系统分析表明,配体¹³C超精细偶合常数A值和结构因子G值有如下规律:(1)│A(C₀)│<│A(C_α)│;A(C₀)为正,A(C_α)为负;(2)│G(C₀)│>│G(C_α)│;配体碳核的G均为负值。     

Normal-state resistivity of superconducting Bi1.95Sr1.65La0.4CuO6+δ single crystals

The anisotropy of the normal-state resistivity of a number of superconducting Bi_1.95Sr_1.65La_0.4CuO_6+δ single crystals has been measured by using both a six- and a four-terminal technique. We find that the ab-plane resistivity _ab in general increases almost linearly with temperature (d_ab/dT> 0). the temperature variation of the c-axis resistivity _c, however, is strongly sample dependent. Both metallic-like (d_c/dT> 0) and mixed temperature dependences of _c, including d_c/dT < 0 are observed. The mixed _c(T) data can be well described by fitting to _c(T) = A + BT + C/T, indicating that the temperature dependence of _c(T) is the result of a competition between metallic and non-metallic terms. The temperature T_min at which _c reaches a minimum increases with increasing d_ab/dT, suggesting that the metallic term of _c arises from misaligned Cu---O planes. This is confirmed by an electron-microscope (HRTEM) analysis of the samples. The anisotropy ratio _c/_ab is of the order of 10³ but increases monotonically with decreasing temperature, indicating differences in the scattering processes parallel and perpendicular to the Cu---O plane.     

Optically pumped GaN/AlGaN quantum well intersubband terahertz laser

We propose an optically pumped nonpolar GaN/AlGaN quantum well (QW) active region design for terahertz (THz) lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature. The fast longitudinal optical (LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state, and more importantly, the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures. The influences of temperature and pump intensity on gain and electron densities are investigated. Based on our simulations, we predict that with a sufficiently high pump intensity, a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.     

不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升

在r面蓝宝石衬底上,采用金属有机化学气相沉积（MOCVD）法高温生长了未掺杂非极性AlGaN半导体薄膜,在此基础上制备了金属-半导体-金属（MSM）结构的紫外探测器。系统研究了在AlGaN半导体薄膜表面分别磁控溅射SiO₂纳米颗粒与SiO₂钝化层两种钝化手段对非极性AlGaN-MSM结构的紫外探测器性能的影响。实验结果表明：磁控溅射SiO₂纳米颗粒钝化或SiO₂钝化层两种手段都能提升AlGaN-MSM结构紫外探测器性能。暗电流测试表明,SiO₂纳米颗粒和SiO₂钝化层可使器件暗电流下降1~2个数量级,达到nA量级。光谱响应测试发现,在5 V偏压下,探测器在300 nm处具有陡峭的截止边,这表明其具有很好的深紫外特性,光谱响应提高了10³倍,紫外可见抑制比高达10⁵。     

Invariant tensors for simple groups

The forms of the invariant primitive tensors for the simple Lie algebras A_l, B_l, C_l, and D_l are investigated. A new family of symmetric invariant tensors is introduced using the non-trivial cocycles for the Lie algebra cohomology. For the A_l algebra it is explicitly shown that the generic forms of these tensors become zero except for the l primitive ones and that they give rise to the l primitive Casimir operators. Some recurrence and duality relations are given for the Lie algebra cocycles. Tables for the 3- and 5-cocycles for su(3) are su(4) are also provided. Finally, new relations involving the d and f su(n) tensors are given.     

Groove-type channel enhancement-mode Al GaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor(GTCE-HEMT)with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 m S/mm, and subthreshold slope of 85 m V/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage(VB) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode(D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits.     

Bulk-wave and guided-wave photoacoustic evaluation of the mechanical properties of aluminum/silicon nitride double-layer thin films

The development of devices made of micro- and nano-structured thin film materials has resulted in the need for advanced measurement techniques to characterize their mechanical properties. Photoacoustic techniques, which use pulsed laser irradiation to nondestructively induce very high frequency ultrasound in a test object via rapid thermal expansion, are suitable for nondestructive and non-contact evaluation of thin films. In this paper, we compare two photoacoustic techniques to characterize the mechanical parameters of edge-supported aluminum and silicon nitride double-layer thin films. The elastic properties and residual stresses in such films affect their mechanical performance. In a first set of experiments, a femtosecond transient pump–probe technique is used to investigate the Young’s moduli of the aluminum and silicon nitride layers by launching ultra-high frequency bulk acoustic waves in the films. The measured transient signals are compared with simulated transient thermoelastic signals in multi-layer structures, and the elastic moduli are determined. Independent pump–probe tests on silicon substrate-supported region and unsupported region are in good agreement. In a second set of experiments, dispersion curves of the A₀ mode of the Lamb waves that propagate along the unsupported films are measured using a broadband photoacoustic guided-wave method. The residual stresses and flexural rigidities for the same set of double-layer membranes are determined from these dispersion curves. Comparisons of the results obtained by the two photoacoustic techniques are made and discussed.     

基于聚噻吩/聚己内酯共混物的有机薄膜晶体管

选择聚3-己基噻吩(P3HT)/聚己内酯(PCL)双晶共混体系制备了不同配比的共混物有机薄膜晶体管。电学性能研究发现,随着共混物中P3HT含量降低,薄膜晶体管的场效应迁移率、开关电流比和阈值电压等性能缓慢降低。当P3HT质量分数为40%时,共混物薄膜仍具有较好的场效应性能,迁移率为0.008 cm²·V^-1·s^-1,开关电流比为5×10³,阈值电压为45.5 V。原子力显微镜测试结果表明:共混物成膜时发生明显的垂直相分离,在界面处形成连续的半导体层,有利于载流子传输。     

Co含量对Fe3Si合金磁学性能的影响

采用基于密度泛函理论（DFT）的赝势平面波法,对过渡金属Co掺杂Fe₃Si进行几何结构优化,计算Co含量对Fe₃Si合金磁学性质的影响.研究表明：Fe_3-xCo_xSi的磁性主要来源于过渡金属元素Fe和Co,并且相对于A、C位的Fe和Co原子,B位Fe的原子磁矩较大;在0≤x≤0.75范围内,随着Co含量的增大,Fe_3-xCo_xSi的总磁矩缓慢减小,在0.75≤x≤1.5时,其总磁矩迅速地增大;A、C位Fe原子的磁矩和合金总磁矩的变化趋势相同,Co原子的磁矩随着Co含量的增大缓慢地增大,原子的磁矩变化与自旋向上和向下方向的电荷转移有关.     

Effects of Cu/In ratio of electrodeposited precursor on post-sulfurization process in fabricating quaternary CuIn(S,Se)2 thin films

This paper reports the analysis of S diffusion into electrodeposited CuInSe₂ (CISe) precursors during post-sulfurization treatment at 500 °C in an Ar/H₂S ambient. The characterizations of the sulfurized films by X-ray diffraction, grazing-incidence X-ray diffraction, Auger electron spectroscopy and micro-Raman spectroscopy allow the observation of the strong dependence of S incorporation into these films on the Cu/In ratio of the precursor. AES profiles reveal higher S content along the depth of Cu-rich film than Cu-poor film after sulfurization. Raman Scattering shows that copper sulfoselenides Cu-(Se,S) are only detected in Cu-rich samples. The re-crystallization of films during sulfurization was analyzed and it is presumed that quasi-liquid Cu-Se phases, which are related to Cu/In ratio of precursor, promote continuous incorporation of S into these films.     

Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schrödingers equation in conjunction with Poissons equation. The results indicate that the concentration of two-dimensional electron gas can be largely increased with the incorporation of an InGaN layer. Both carrier density and quantum confinement are very sensitive to the strain in the InGaN channel layer. These novel features are attributed to the strong polarization effect in the AlGaN/InGaN and InGaN/GaN interfaces. PACS 85.30.De; 85.30.Tv; 77.65.Ly; 85.35.Be; 02.60.Cb     

Thermally activated flux dissipation in c-axis-oriented YBa2Cu3O7−δ ultrathin films

The resistive transitions of ultrathin YBa₂Cu₃O_7−δ (YBCO) films with thicknesses 75 and 200 Å were studied under magnetic fields. For the 75 Å film under a 5 T parallel magnetic field (Hbab-plane), no broadening of the resistive transition occurred. In the perpendicular magnetic field (H ab-plane), the broadening of the resistive transition of the 75 Å film is larger than that of the 200 Å thick film. The flux activation energy U was found to be linearly dependent on the temperature and logarithmically dependent on the magnetic field for both 75 and 200 Å films, which means the two samples have a two-dimensional vortex lattice. Furthermore, the activation energy U also increased with the film thickness, indicating that the magnetic correlation length in the c-axis direction l_c is larger than the 200 Å for bulk YBCO.     

MOCVD法制备BGaN薄膜

利用金属有机物化学气相沉积(MOCVD)技术,在蓝宝石衬底上进行了BGaN薄膜的外延生长,研究了生长厚度、温度、压力和B/Ⅲ比等条件对BGaN薄膜中B组分的影响。X射线衍射测试结果表明,降低生长温度、压力以及增加B/Ⅲ比,更有利于提高BGaN薄膜中B的并入效率。在800℃、30 kPa及B/Ⅲ比为30%的生长条件下,制备的BGaN薄膜中B组分最高,为6.1%。     

Magnesium incorporation efficiencies in Mg_xZn_(1-x)O films on ZnO substrates grown by metalorganic chemical vapor deposition

We investigate the magnesium(Mg) incorporation efficiencies in Mg_xZn_(1-x)O films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition(MOCVD) technique. In order to deposit high quality Mg_xZn_(1-x)O films,atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O_2 atmosphere and characterized by atomic force microscope(AFM). The AFM, scanning electron microscope(SEM),and x-ray diffraction(XRD) studies demonstrate that the Mg_xZn_(1-x)O films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and Ⅵ/Ⅱ ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high Ⅵ/Ⅱratio are good for obtaining high Mg content.     

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

SiN_x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN_x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN_x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

Synthesis and characterization of HgBa2Can−1CunO2n+2+δ (n = 1, 2, and 3)

We have successfully prepared the first three members of the mercury-based superconducting compounds Hg--- Ba₂Ca_n−1Cu_nO_2n+2+δ, namely Hg---1201, Hg---1212 and Hg---1223 with high purity and very good quality. T he influence of the synthesis parameters is studied in detail. Using the sealed quartz tube method, very simple procedures are found to ensure a 100% reproducibility of nearly 100% pure Hg---1201 and 85–90% Hg---1212 and Hg---1223. Oxygen annealing of the sample Hg---1201 at 300°C for 18 h results in an enhancement of its critical temperature up to 97 K. The symmetry of the first and second members is tetragonal with lattice parameters a = 3.8831 (1) Å, C = 9.5357 (2) Å, and A = 3.8624 (1) Å, C = 12.7045 (2) Å, respectively. X-ray diffraction lines of Hg---1223 can be indexed in a tetragonal cell with a = 3.8564 (1) Å and C = 15.8564 (9) Å as well as in an orthorhombic cell with lattice parameters a = 5.4537 (1) Å, B = 5.4247 (1) Å, and C = 15.8505 (7) Å.     

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.