环形光子晶体光纤中涡旋光的传输特性研究

由于涡旋光具有轨道角动量,将它应用于光纤通信领域可以有效提高信息传输速率.设计了一种环形光子晶体光纤,利用COMSOL Multiphysics软件对其涡旋光TE01,HE±21和TM01模式特性进行模拟计算,它们之间有效折射率差分别为4.59×10~(-4)和3.62×10~(-4);其中,TE01模式的涡旋光在入射光波长范围为1650—1950 nm时,色散值在44.18—45.83 ps·nm~(-1)·km~(-1)之间平坦;入射光波长在1550 nm时,TE01模式的涡旋光的非线性系数为1.37 W~(-1)·km~(-1).该结构的光子晶体光纤的涡旋光具有损耗小、色散平坦等特性,对光纤中传输涡旋光、将涡旋光应用于超连续谱等方面的研究具有重要意义.     

低损耗低非线性高负色散光子晶体光纤的优化设计

设计了一种同轴双芯六角点阵光子晶体光纤, 该光纤中心缺失一根空气柱形成内纤芯, 通过减小第4环空气孔的直径形成外纤芯. 采用全矢量有限元法并结合各向异性完美匹配层边界条件, 对其色散、非线性、约束损耗和模场等特性进行了数值模拟. 结果发现, 该光纤呈现高负色散可调效应和较强的模场约束能力, 约束损耗接近10^-2 dB· m^-1. 调整光纤结构参数(即空气孔间隔Λ, 小孔直径d₁和相对孔间隔比f), 可以控制其高负色散工作波长. 若调整光纤结构参数Λ=1.2 μ, f=0.917, d₁=0.515 μm时, 该光纤在低损耗通信窗口C波段呈现负色散和负色散斜率, 其色散斜率在-1----6 ps· km^-1nm^-2范围内波动, 在波长1.55 μm处负色散值为-3400 ps· km^-1nm^-1, 模场面积高达43 μm², 非线性系数仅有3.6 km^-1W^-1. 该光纤在C波段呈现的低损耗低非线性高负色散特性, 具有很好的色散补偿能力, 将在长距离大容量 高功率高速光通信系统中获得很好的应用.     

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

In this paper, the normally-off N-channel lateral 4H–Si C metal–oxide–semiconductor field-effect transistors(MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–Si C/SiO_2 were examined by the measurement of HF I–V, G–V, and C–V over a range of frequencies. The ideal C–V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–Si C was reduced to 2 × 10~(11) e V~(-1)·cm~(-2), the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak fieldeffect mobility is about 32.5 cm~2·V~(-1)·s~(-1), and the maximum peak field-effect mobility of 38 cm~2·V~(-1)·s~(-1) was achieved in fabricated lateral 4H–Si C MOSFFETs.     

一种与标准单模光纤高适配的低弯曲损耗光子晶体光纤

设计并研制出一种与普通单模光纤高适配的低弯曲损耗光子晶体光纤. 结构采用光纤预制棒制作工艺上易于实现的掺锗芯六孔结构. 应用间接测量方法, 对其模式、弯曲及色散特性进行了系统的评估. 在波长1550 nm处研制光纤的模场面积为79.26 μm², 色散为21.7 ps·km^-1·nm^-1, 模场面积和色散特性与标准单模光纤具有高的适配性. 在光纤弯曲半径为5 mm时, 在波长1550 nm处的弯曲损耗为0.0365 dB/圈, 小于G.657B的弯曲损耗0.5 dB/圈. 研究成果为光纤到户用低弯曲损耗光纤的实用化奠定了良好的基础. 关键词： 光子晶体光纤 低弯曲损耗 光纤到户 高适配性     

Optimization of highly nonlinear dispersion-flattened photonic crystal fiber for supercontinuum generation

A simple type of photonic crystal fiber (PCF) for supercontinuum generation is proposed for the first time. The proposed PCF is composed of a solid silica core and a cladding with square lattice uniform elliptical air holes, which offers not only a large nonlinear coefficient but also a high birefringence and low leakage losses. The PCF with nonlinear coefficient as large as 46 W 1 · km-1 at the wavelength of 1.55 μm and a total dispersion as low as ±2.5 ps · nm-1 · km-1 over an ultra-broad waveband range of the S-C-L band (wavelength from 1.46 μm to 1.625 μm) is optimized by adjusting its structure parameter, such as the lattice constant Λ , the air-filling fraction f , and the air-hole ellipticity η. The novel PCF with ultra-flattened dispersion, highly nonlinear coefficient, and nearly zero negative dispersion slope will offer a possibility of efficient super-continuum generation in telecommunication windows using a few ps pulses.     

一种新型高双折射光子晶体光纤特性研究

设计了一种高双折射高非线性光子晶体光纤, 采用全矢量有限元法研究了这种光纤的基模模场、双折射、非线性、有效模面积及色散特性. 数值研究发现, 减小孔间距Λ的大小, 在波长1550 nm 处, 该光纤可获得10^-2 数量级的双折射B, 比普通的椭圆保偏光纤高约两个数量级; 同时, 该光纤可获得42 W^-1·km^-1 的高非线性系数γ. 另外,分别在可见光和近红外波段出现了两个零色散波长, 在波长800–2000 nm 之间具有良好的色散平坦特性. 这种设计为获得高双折射高非线性超平坦色散光子晶体光纤提供了一种新的方法, 该光纤在偏振控制、非线性光学和色散控制方面具有广泛的应用前景. 关键词： 光子晶体光纤 高双折射 高非线性 有限元法     

Limiting efficiencies of second-harmonic generation and cascaded χ processes in quadratically nonlinear photonic nanowires

Quadratically nonlinear waveguides with subwavelength core dimensions are shown to provide limiting efficiencies of second-harmonic generation and three-wave mixing, as well as cascaded χ⁽²⁾ nonlinear-optical interactions. Small-core waveguides made of high-χ⁽²⁾ materials, such as gallium arsenide and indium phosphide, are shown to allow anomalous dispersion to be achieved within the range of wavelengths from 1.3 to 2.0 μm, with the wavelength of zero group-velocity dispersion controlled by the size of the waveguide core.     

Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants(SDDC). High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10~(-14)~(–10)~(-12)m~2·V~(-2) for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.     

低差分模式时延少模光纤的有限元分析及设计

针对少模光纤展开研究, 利用Comsol软件计算其模场分布、有效折射率, 进而分析光纤的差分模式时延. 通过分析不同结构参量对模式数量和差分模式时延的影响, 设计出了两种低差分模式时延的少模光纤, 即带有外下陷的渐变式光纤和多阶少模光纤. 波长在1530–1570 nm 范围内, 带有外下陷的渐变式光纤支持四模传输, LP₁₁, LP₂₁, LP₀₂模式的差分模式时延的绝对值小于0.015 ps·m^-1; 多阶少模光纤支持两模传输, LP₁₁的差分模式时延低于0.185 ps·m^-1. 两种少模光纤均具有良好的差分模式时延特性, 适于在模分复用技术中应用.     

Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT

AZO-gated and Ni/Au-gated AlGaN/GaN HEMTs are fabricated successfully,and an excellent transparency of AZOgated electrode is achieved.After a negative gate bias stress acts on two kinds of the devices,their photoresponse characteristics are investigated by using laser sources with different wavelengths.The effect of photoresponse on AZO-gated electrode device is more obvious than on Ni/Au-gated electrodes device.The electrons are trapped in the AlGaN barrier of AZO-gated HEMT after it has experienced negative gate bias stress,and then the electrons can be excited effectively after it has been illuminated by the light with certain wavelengths.Furthermore,the trap state density D_T and the time constantτ_T of the AZO-gated Schottky contact are extracted by fitting the measured parallel conductance in a frequency range from10 kHz to 10 MHz.The constants of the trap range from about 0.35 μs to 20.35 μs,and the trap state density increased from1.93×l0~(13)eV 1·cm~2 at an energy of 0.33 eV to 3.07×10~(11) eV~1·cm~2 at an energy of 0.40 eV.Moreover,the capacitance and conductance measurements are used to characterize the trapping effects under different illumination conditions in AZO-gated HEMTs.Reduced deep trap states' density is confirmed under the illumination of short wavelength light.     

溶胶凝胶法制备以HfO2为绝缘层和ZITO为有源层的高迁移率薄膜晶体管

采用溶胶凝胶法制备了h-k氧化铪HfO₂薄膜, 经500℃退火后, 获得了高透过率、表面光滑、低漏电流和相对高介电常数的HfO₂薄膜. 并采用氧化铪作为绝缘层和锌铟锡氧化物作为有源层成功地制备了底栅顶接触结构薄膜晶体管器件. 获得的薄膜晶体管器件的饱和迁移率大于100 cm²·V^-1·s^-1, 阈值电压为-0.5 V, 开关比为5×10⁶, 亚阈值摆幅为105 mV/decade. 表明采用溶胶凝胶制备的薄膜晶体管具备高的迁移率, 其迁移率接近低温多晶硅薄膜晶体管的迁移率.     

丙烯醛在外电场中的解离性质

利用密度泛函理论（DFT）计算方法,在6-31G+（d,p）基组上,讨论C₃H₄O气体分子在受到外加电场（-10.28 V·nm^-1~10.28 V·nm^-1）作用时的结构特征和解离特性。计算发现,沿分子共轭单键的方向电场增强时,总能量增大,碳碳双键和碳碳单键的键长减小,碳氧双键键长增大,偶极矩减小;能隙E_G增加,红外吸收峰在不同的频率分别发生红移和蓝移,同时IR强度发生变化。分子解离性能表现为：势能壁垒随着外电场增大而降低,达到25.71 V·nm^-1时势能壁垒几乎消失,解离能随着电场增加而逐渐降低,说明在电场作用下解离难度逐渐减小。研究结果为C₃H₄O气体分子或含有该成分的混合物在外电场下的解离特性研究提供参考。     

Dispersion modified slot optical waveguides

Advent of slot waveguide structures had opened a new era where light can be confined in low index slot guarded by high index slabs. Already in use SOI slot waveguides (contrast ratio is 2.42) have two distinct properties over the conventional waveguides, i.e. high E-field amplitude, optical power, optical intensity in low index materials, and strong E-field confinement localized to nanometer-size low index regions. We hereby propose a low refractive index contrast ratio slot waveguide structure (ratio is 1.18) comprising of commercially available glass material. Novelty lies in showing high E-field amplitude, optical power, optical intensity, and strong E-field confinement in low index slot regions despite of lowest ever reported contrast ratio. A systematic numerical study on the higher order dispersion characteristics of the widely studied SOI-based slot structure and of our proposed low refractive index contrast slot structure is carried out. It has been demonstrated that low refractive index contrast ratio slot optical waveguide GVD properties are quite different than SOI slot optical waveguide. The less normal dispersion existing in this kind of waveguide could have an impact on their applications in various nonlinear or linear applications.     

The unique carrier mobility of Janus MoSSe/GaN heterostructures

Heterostructure is an effective approach in modulating the physical and chemical behavior of materials. Here, the first-principles calculations were carried out to explore the structural, electronic, and carrier mobility properties of Janus MoSSe/GaN heterostructures. This heterostructure exhibits a superior high carrier mobility of 281.28 cm²·V⁻¹·s⁻¹ for electron carrier and 3951.2 cm²·V⁻¹·s⁻¹ for hole carrier. Particularly, the magnitude of the carrier mobility can be further tuned by Janus structure and stacking modes of the heterostructure. It is revealed that the equivalent mass and elastic moduli strongly affect the carrier mobility of the heterostructure, while the deformation potential contributes to the different carrier mobility for electron and hole of the heterostructure. These results suggest that the Janus MoSSe/GaN heterostructures have many potential applications for the unique carrier mobility.     

Dispersion characteristics of SOI-based slot optical waveguides

The invention of the slot waveguide had enabled a number of interesting novel linear or nonlinear optical applications by guiding light in nanometers-wide low index slots guarded by high-index slabs. As one of its key characteristics, the low modal index for this kind of waveguides has been demonstrated by many studies. However, their higher order dispersion properties have not been thoroughly investigated yet, while the growing size and complexity of these devices and their potential nonlinear optical applications involving short optical pulses demand further understanding in their dispersion behavior. We here carry out a numerical study on the higher order dispersion characteristics of the SOI-based slot structures around the 1550 nm wavelength. Our results show that they could have significantly different second order dispersion properties in contrast to the traditional channel SOI waveguides. Their potentially large normal dispersion could have an impact on various nonlinear or linear applications. The relationship between the dispersion performance and the waveguide design is also investigated, and the results could show further venues to optimize or control the dispersion properties of such waveguides.     

石墨烯厚度与其力-距离关系的实验和模拟研究

通过原子力显微镜高度曲线确定高度分别为0.57 nm、0.90 nm和1.30 nm三个石墨烯片,随后进行多次力-距离曲线测量.结果发现:三个石墨烯片吸附力数值的平均值分别为0.30 nN、0.32 nN和0.34 nN,脱附力的平均值分别为5.33 nN、5.66 nN和7.24 nN.实验显示吸、脱附力随石墨烯厚度...     

Thermoelectric enhancement in triple-doped strontium titanate with multi-scale microstructure

Strontium titanate(SrTiO_3) is a thermoelectric material with large Seebeck coefficient that has potential applications in high-temperature power generators.To simultaneously achieve a low thermal conductivity and high electrical conductivity,polycrystalline SrTiO_3 with a multi-scale architecture was designed by the co-doping with lanthanum,cerium,and niobium.High-quality nano-powders were synthesized via a hydrothermal method.Nano-inclusions and a nano/microsized second phase precipitated during sintering to form mosaic crystal-like and epitaxial-like structures,which decreased the thermal conductivity.Substituting trivalent Ce and/or La with divalent Sr and substituting pentavalent Nb with tetravalent Ti enhanced the electrical conductivity without decreasing the Seebeck coefficient.By optimizing the dopant type and ratio,a low thermal conductivity of 2.77 W·m~(-1)·K~(-1) and high PF of 1.1 mW·m~(-1)·K~(-2) at 1000 K were obtained in the sample co-doped with 5-mol% La,5-mol% Ce,and 5-mol% Nb,which induced a large ZT of 0.38 at 1000 K.     

铜-钼源漏电极对非晶氧化铟镓锌薄膜晶体管性能的改善

在铜(Cu)和非晶铟镓锌氧化物(a-IGZO)之间插入30 nm厚的钼(Mo)接触层, 制备了具有Cu-Mo源漏电极的a-IGZO薄膜晶体管(TFT). Mo接触层不仅能够抑制Cu与a-IGZO有源层之间的扩散, 而且提高了Cu电极与玻璃基底以及栅极绝缘层的结合强度. 制备的Cu-Mo结构TFT与纯Cu 结构TFT相比, 具有较高的迁移率(～9.26 cm²·V^-1·s^-1)、更短的电流传输长度(～0.2 μm)、更低的接触电阻(～1072 Ω)和有效接触电阻率(～1×10^-4Ω·cm²), 能够满足TFT 阵列高导互联的要求.     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

Extraordinary mechanical performance in charged carbyne

Carbyne, the linear chain of carbon, promises the strongest and toughest material but possesses a Peierls instability (alternating single-bonds and triple-bonds) that reduces its strength and toughness. Herein, we computationally found that the gravimetric strength, strain-to-failure, and gravimetric toughness can be improved from 74 GPa·g^-1·cm³, 18%, and 9.4 kJ·g^-1 for pristine carbyne to the highest values of 106 GPa·g^-1·cm³, 26%, and 19.0 kJ·g^-1 for carbyne upon hole injection of +0.07 e/atom, indicating the charged carbyne with record-breaking mechanical performance. Based on the analyses of the atomic and electronic structures, the underlying mechanism behind the record-breaking mechanical performance was revealed as the suppressed and even eliminated bond alternation of carbyne upon charge injection.