La0.67Ca0.33MnO3/NdGaO3(001)薄膜中外延应变诱导的各向异性磁阻效应

本文使用脉冲激光沉积方法在正交的NdGaO3(001)衬底上外延生长了La0.67Cao.33MnO3薄膜.退火后,由于外延应变引起薄膜正交畸变增强,薄膜在低于250K的整个温度区间都出现了铁磁金属态和反铁磁绝缘态的相分离和相竞争.这两相的竞争强烈依赖于磁场相对晶轴的方向,由此导致存在于很宽温度范围内的低场各向异性磁阻...     

厚度与应变效应对La0.67Ca0.33MnO3薄膜电输运与居里温度的影响

在厚度为25—400nm范围内，系统地研究了 (001)SrTiO_3(STO), (001)LaAlO_3(LAO)衬底上La_0.67Ca_0.33Mn_O.3 (LCMO)薄膜的电输运与居里温度T_C随薄膜厚度及衬底的变化. 结果表明，随薄膜变薄，电阻率ρ增加，T_C降低. 对于同一薄膜厚度，LCMO/STO薄膜的ρ大于LCMO/LAO基上的薄膜的ρ. T_C衬底的依赖关系则与ρ相反. 分析表明，LCMO薄膜的低温区电阻温度(ρ-T) 符合关系式ρ=ρ_0+Bω_s/sin h^2(ω_s/2/k_BT)+CT^n， 其中ρ_0为剩余电阻；等号右端第二项反映软光学模声子对电子散射的贡献；第三项包括其余可能散射机 理在电输运过程中所起的作用；B，ωs（软光学模声子的平均频率）与C都为拟合系数. 高温区的电输运则由小极化子跃迁模型ρ=DT×exp（E_a/k_BT）描述（E_a为极化子激 发能）. 根据ρ_0，ωs，E_a以及T_Ｃ变化，初步讨论了薄膜中的厚度与应变效应. 进一步 研究发现ωs，E_a的变化与T_C相关，从而说明极化子效应为影响T_C变化的主要因素. 关键词： 锰氧化物薄膜 电输运 居里温度 极化子     

La0.67Ca0.33MnO3薄膜中的各向异性应变与电荷有序

本文采用脉冲激光沉积法在NdGaO3(001)单晶衬底上制备了一系列的La0.67Ca0.33MnO3薄膜,实验主要研究了薄膜的输运性质.La0.67Ca0.33sMnO3块材是铁磁金属基态,而La0.67Ca0.33MnO3/NdGaO3(001)薄膜由于各向异性应变的存在,可以观测到电荷有序绝缘相的出现.薄膜样品表...     

(La_(1-x)Ce_x)_(2/3)Ca_(1/3)MnO_3体系的结构和输运性质研究

对Ce掺杂锰氧化物 (La1 -xCex) 2 3Ca1 3MnO3(x =0— 1.0 )多晶样品的结构和输运性质系统研究的结果 .实验表明 ,在低掺杂浓度下 ,样品呈现完整的正交钙钛矿结构 ;随掺杂浓度的增加 ,有少量CeO2 杂相出现 ,同时伴随有Ce3 和Ce4 离子两种价态的涨落和Mn2 Mn3 Mn4 混合价态的共存 ,Ce掺杂导致的体系无序度增加 ,使得绝缘体 -金属 (I M)和顺磁 -铁磁 (PM FM)转变温度向低温方向移动 .有趣的是 ,Ce掺杂样品的电阻率测量I M转变峰值温度TIM 较PM FM转变温度Tc 为高 ,其差值ΔT(=TIM -Tc)随Ce掺杂含量的增加而增加 ,最大差值ΔT达 5 0K .各样品的磁电阻则随温度的降低而增加 ,在Tc 附近MR达到最大值 ,且随Ce掺杂含量增加Tc 附近的MR最大值迅速增加 ,达到 10 4 %以上 ,表现出很强的庞磁电阻效应 .在x≥ 0 .7时 ,磁电阻效应则表现出反常减小 .整体上而言 ,各样品的磁特性与输运行为间有较强的关联 ,电输运特性可用双交换作用模型进行很好的解释 ,在高温区满足热激活模型 .最后 ,在Ce掺杂对Tc 和MR的影响机理方面进行了初步讨论 .     

Modulation of ultrafast laser-induced magnetization precession in BiFeO_3-coated La_(0.67)Sr_(0.33)MnO_3 thin films

The ultrafast laser-excited magnetization dynamics of ferromagnetic(FM) La_(0.67)Sr_(0.33)MnO_3(LSMO) thin films with BiFeO_3(BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique.Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect.The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films,which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.     

La0.67Pb0.33MnO3的磁性及输运特性

利用固相反应烧结法制备了La067Pb033MnO3单相多晶样品.研究了其结构、磁性及输运特性.结果表明，样品呈菱面相晶体结构，空间群为R3C，居里温度TC(=353K)非常接近TMI(=360K).在居里温度附近，发生铁磁-顺磁转变，导电特性由金属特征向半导体特征过渡.磁电阻在居里点达到极大值.当H=16T时，磁电阻的极大值为145%；当H=08T时，磁电阻的极大值为9%.输运性质表明，TTMI时 关键词： 磁电阻 输运特性 磁极化子 钙钛石     

Tuning the phase separation in La_(0.325)Pr_(0.3)Ca_(0.375)MnO_3 using the electric double-layer field effect

Electric double-layer field effect experiments were performed on ultrathin films of La0.325Pr0.3Ca0.375MnO3, which is noted for its micrometer-scale phase separation. A clear change of resistance up to 220% was observed and the characteristic metal–insulator transition temperature TPwas also shifted. The changes of both the resistance and TPsuggest that the electric field induced not only tuning of the carrier density but also rebalancing of the phase separation states. The change of the charge-ordered insulating phase fraction was estimated to be temperature dependent, and a maximum of 16% was achieved in the phase separation regime. This tuning effect was partially irreversible, which might be due to an oxygen vacancy migration that is driven by the huge applied electric field.     

Abundant photoelectronic behaviors of La_(0.67)Sr_(0.33)MnO_3/Nb:SrTiO_3 junctions

Temperature dependence on rectifying and photoelectronic properties of La_(0.67)Sr_(0.33)MnO_3/Nb:SrTiO_3(LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.     

Transport and magnetoresistance effect in an oxygen-deficient SrTiO_3/La_(0.67)Sr_(0.33)MnO_3 heterojunction

An oxygen-deficient SrTiO3/La0.67Sr0.33MnO3 heterojunction is fabricated on an SrTiO3 （001） substrate by a pulsed laser deposition method. The electrical characteristics of the heterojunction are studied systematically in a temperature range from 80 K to 300 K. The transport mechanism follows I ∝ exp （eV/nkT） under small forward bias, while it becomes space charge limited and follows I ∝ Vm（T） with 1.49〈 m 〈1.99 under high bias. Such a heterojunction also exhibits magnetoresistance （MR） effect. The absolute value of negative MR monotonically increases with temperature decreasing and reaches 26.7% at 80 K under H=0.7 T. Various factors, such as strain and oxygen deficiency play dominant roles in the characteristics.     

Antiferromagnetic interlayer coupling of (111)-oriented La_(0.67)Sr_(0.33)MnO_3/SrRuO_3 superlattices

We report a strong antiferromagnetic(AFM) interlayer coupling in ferromagnetic La_(0.67)Sr_(0.33)MnO_3/SrRuO_3(LSMO/SRO) superlattices grown on(111)-oriented SrTiO_3 substrate. Unlike the(001) superlattices for which the spin alignment between LSMO and SRO is antiparallel in the in-plane direction and parallel in the out-of-plane direction, the antiparallel alignment is observed along both the in-plane and out-of-plane directions in the present sample. The low temperature hysteresis loop demonstrates two-step magnetic processes, indicating the coexistence of magnetically soft and hard components. Moreover, an inverted hysteresis loop was observed. Exchange bias tuned by the temperature and cooling field was also investigated, and positive as well as negative exchange bias was observed at the same temperature with the variation of the cooling field. A very large exchange field(H_(EB)) was observed and both magnitude and sign of the H_(EB)depend on the cooling field, which can be attributed to an interplay of Zeeman energy and AFM coupling energy at the interfaces. The present work shows the great potential of tuning a spin texture through interfacial engineering for the complex oxides whose spin state is jointly determined by strongly competing mechanisms.     

Preparation of La_(0.67)Ca_(0.23)Sr_(0.1)MnO_3 thin films with interesting electrical and magnetic properties via pulsed-laser deposition

<正>Manganese oxides with a perovskite-type Re_(1-x)D_xMnO_3(Re:heavy rare-earth elements,D:divalent alkali metal)structure have attracted interest because of the complex interaction between their electrons,lattices,and spins[1-5].Generally,manganese oxides with the structure Re_(1-x)D_xMnO_3 have special properties.For example,the half-metallic manganites,such as La_(2/3)Sr_(1/3)MnO_3 and La_(2/3)Ca_(1/3)MnO_3,wherein the conduction electrons are completely spin polarized,exhibit     

Magnetic Anisotropy Induced by Orbital Occupation States in La_(0.67)Sr_(0.33)MnO_3 Films

Interface engineering is an effective and feasible method to regulate the magnetic anisotropy of films by altering interfacial states between films.Using the technique of pulsed laser deposition,we prepared La_(0.67)Sr_(0.33)MnO_3(LSMO) and La_(0.67)Sr_(0.33)MnO_3/SrCoO_(2.5)(LSMO/SCO) films on(110)-oriented La_(0.3)Sr_(0.7)Al_(0.65)Ta_(0.35)O_3 substrates.By covering the SCO film above the LSMO film,we transformed the easy magnetization axis of LSMO from the [001] axis to the [110] axis in the film plane.Based on statistical analyses,we find that the corresponding Mn-Mn ionic distances are different in the two types of LSMO films,causing different distortions of Mn-O octahedron in LSMO.In addition,it also induces diverse electronic occupation states in Mn~(3+) ions.The eg electron of Mn~(3+)occupies 3 z~2-r~2 and x~2-y~2 orbitals in the LSMO and LSMO/SCO,respectively.We conclude that the electronic spin reorientation leads to the transformation of the easy magnetization axis in the LSMO films.     

Mo低掺杂La0.67Sr0.33MnO3的磁电特性及室温磁电阻增强

采用固相反应法成功制备了Mo低掺杂La0.67Sr0.33Mn1-xMoxOc(x=0,0.02)单相多晶样品,系统研究了样品的磁性、电输运特性和磁电阻效应.发现Mo低掺杂对La0.67Sr0.33MnO3 的居里温度影响很小,但在La0.67Sr0.33MnO3铁磁基态背景下诱导出团簇自旋玻璃态行为.在低温区(0.1相似文献   

La_(0.8-x)Ca_(0.2)MnO_3纳米颗粒的居里温度与磁热效应

采用溶胶 凝胶法制备了系列La0 .8-xCa0 .2 MnO3 多晶样品 ,用X射线衍射分析确定了样品的钙钛矿结构 ,用透射电子显微镜观察了样品的形貌及粒径分布情况 ,用PAR15 5型振动样品磁强计测量了样品的磁性随外场和温度的变化 ,确定样品的居里温度并计算了各样品的磁熵变 .磁测量及计算结果表明制备的各样品的居里温度在180— 2 6 0K的范围内且随焙烧温度和La3 离子空位浓度的不同而变化 ,不同温度焙烧的样品均有较大的磁熵变值 ,其中 110 0℃焙烧的La0 77Ca0 .2 MnO3,多晶样品在 2 40 5K ,H =1 0T的外场下的磁熵变达 3 76J/kg·K ,对实验结果做了定性的分析 .该材料具有较高的居里温度和较大的磁熵变 ,所需外场强度适中 ,电阻率高 ,性能稳定 ,适合做高温磁制冷材料 .     

Anisotropic transport properties of charge-ordered La_(5/8-y)Pr_yCa_(3/8)MnO_3(y= 0.43) film

The anisotropic resistances along [001] and [1-10] axes are investigated for an La5/8-yPryCa3/8MnO3(y = 0.43)(LPCMO) film grown on(110)-oriented La AlO3 substrate. It is found that the charge order(CO) transition is much stronger and the resistance is larger along the [001] direction than that along the [1-10] direction. Special attention has been paid to the different effects of a magnetic field on the resistances of the two axes. The resistance is more susceptible to the magnetic field along the [001] direction compared with that along the [1-10] direction. Our results demonstrate that the anisotropic transport properties can be ascribed to the intrinsic anisotropic strain field in the film, which changes the shape of metallic domains for the phase separation manganite film. We also provide a feasible method to rule out the Joule heat effect from the electric current effect. This could be useful for future construction and application of materials and devices.     

Effects of Si surficial structure on transport properties of La_(2/3)Sr_(1/3)MnO_3 films

La_(2/3)Sr_(1/3)MnO_3 films are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.     

Electric current-induced giant electroresistance in La_(0.36)Pr_(0.265)Ca_(0.375)MnO_3 thin films

The electroresistance(ER) of La_(0.36)Pr_(0.265)Ca_(0.375)MnO_3(LPCMO) epitaxial thin film was studied under various dc currents.The current effect was compared for the unpatterned film and patterned microbridge with a width of 50 μm.The value of ER in the unpatterned LPCMO film could reach 0.54 under a 1-mA current,which is much higher than ER under 1 mA for the patterned weak phase-separated La_(0.67)Ca_(0.33)MnO_3 and La_(0.85)Sr_(0.15)MnO_3 microbridges with 50-μm width.More interestingly,for the patterned LPCMO microbridge,the maximum of ER can reach 0.6 under a small current of 100 μ.A.The results were explained by considering the coexistence of ferromagnetic metallic phase with the charge-ordered phase,and the variation of the phase separation with electric current.     

Field-induced insulator-metal-insulator transitions in low-energy H_2~+ ion-irradiated epitaxial La_(2/3)Ca_(1/3)MnO_3 thin films

Epitaxial La 2/3 Ca 1/3 MnO 3 thin films grown on LaAlO 3 (001) substrates were irradiated with low-energy 120-keV H 2 + ions over doses ranging from 10 12 ions/cm 2 to 10 17 ions/cm 2 . The irradiation suppresses the intrinsic insulator-metal (I-M) transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 × 10 15 ions/cm 2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Transport properties and anomalous fatigue effect of Ag/Bi_(0.9)La_(0.1)FeO_3/La_(0.7)Sr_(0.3)MnO_3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.1FeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I–V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I–V curves combined with C– f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I–V cycle state, this structure shows more than one order increase of resistance after 100 cycles of "I–V curve training". The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.1FeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.1FeO3 interface.     

Dielectric loss of half-doped manganite La_(0.5)Ca_(0.5)MnO_3

The dielectric loss tanδ of half-doped manganite La 0.5 Ca 0.5 MnO 3 is investigated using Green's function technique. The La 0.5 Ca 0.5 MnO 3 is described by the Kondo-lattice model in the double exchange limit, taking into account the Jahn-Teller distortion and the super-exchange interaction between the localized electrons. It is found that the intensity of tanδ decreases with increasing | ε JT |, V, and U. It is also observed that the transition temperature T P rises as | ε JT | and U increase. It is worth noting that T P remains unchanged and the strength of tanδ increases with increasing g. The calculated dielectric loss results are explained theoretically, and these behaviors are in qualitative agreement with the experimental results.