金刚石纳米颗粒中氮空位色心的电子自旋研究

通过电子注入的方法制备了含氮空位色心单光子源的金刚石荧光纳米颗粒. 自旋回声测试结果表明, 纳米颗粒中氮空位色心的相干时间T₂很短, 介于0.86 μs至5.6 μs之间. Ramsey干涉条纹测试结果表明, 氮空位色心NV1点的退相干时间T₂^* 最大, 为0.7 μs, 其电子自旋共振谱可分辨的最小线宽为1.05 MHz. 并且NV1点的电子自旋共振谱可分辨氮空位色心本身的¹⁴N核自旋与 氮空位色心电子自旋之间的2.2 MHz超精细相互作用, 这对于在金刚石纳米颗粒中实现核自旋的操控和多个量子比特的门操作具有重要意义. 关键词： 纳米颗粒 氮空位色心 电子自旋     

Influencing range of vacancy defects in zigzag single-walled carbon nanotubes

The influencing range of a vacancy defect in a zigzag single-walled nanotube is characterized with both structural deformation and variation in bandstructure. This paper proposes a microscopic explanation to relate the structural deformation to the bandstructure variation. With an increasing defect density, the nanotubes become oblate and the energy gap between the deep localized gap state and the conducting band minimum state decreases. Theoretical results shed some light on the local energy gap engineering via vacancy density for future potential applications.     

Oxygen vacancy in N-doped Cu₂ O crystals:A density functional theory study

The N-doping effects on the electronic properties of Cu2O crystals are investigated using density functional theory.The calculated results show that N-doped Cu2O with or without oxygen vacancy exhibits different modifications of electronic band structure.In N anion-doped Cu2O,some N 2p states overlap and mix with the O2p valence band,leading to a slight narrowing of band gap compared with the undoped Cu2O.However,it is found that the coexistence of both N impurity and oxygen vacancy contributes to band gap widening which may account for the experimentally observed optical band gap widening by N doping.     

LiAl中空位形成能的第一原理计算

LiAl是一种非常典型和有重要用途的金属间化合物.采用平面波展开和第一原理赝势法，计算了LiAl化合物中Li空位和Al空位的形成能和空位周围的原子弛豫，讨论了空位形成时电荷密度的重新分布、相应的电子态密度以及能带结构等性质. 关键词： LiAl 空位形成能 第一原理计算     

Towards understanding the carbon trapping mechanism in copper by investigating the carbon-vacancy interaction

We propose a vacancy trapping mechanism for carbon-vacancy (C-V) complex formation in copper (Cu) according to the first-principles calculations of the energetics and kinetics of C-V interaction. Vacancy reduces charge density in its vicinity to induce C nucleation. A monovacancy is capable of trapping as many as four C atoms to form CnV (n=1,2,3,4) complexes. A single C atom prefers to interact with neighboring Cu at a vacancy with a trapping energy of 0.21 eV. With multiple C atoms added, they are preferred to bind with each other to form covalent-like bonds despite of the metallic Cu environment. For the CnV complexes, C2V is the major one due to its lowest average trapping energy (1.31 eV). Kinetically, the formation of the CnV complexes can be ascribed to the vacancy mechanism due to the lower activation energy barrier and the larger diffusion coefficient of vacancy than those of the interstitial C.     

氮掺杂和空位对石墨烯纳米带热导率影响的分子动力学模拟

石墨烯是近年纳米材料研究领域的一个热点,其独特的热学性质受到了广泛关注,为了实现对石墨烯传热特性的预期与可控,利用氮掺杂和空位缺陷对石墨烯进行改性.采用非平衡态分子动力学方法研究了扶手形石墨烯纳米带中氮掺杂浓度、位置及空位缺陷对热导率影响并从理论上分析了热导率变化原因.研究表明氮掺杂后石墨烯纳米带热导率急剧下降,氮浓度达到30%时,热导率下降了75.8%;氮掺杂位置从冷浴向热浴移动过程中,热导率先近似的呈线性下降后上升;同时发现单原子三角形氮掺杂结构比多原子平行氮掺杂结构对热传递抑制作用强;空位缺陷的存在降低了石墨烯纳米带热导率,空位缺陷位置从冷浴向热浴移动过程中,热导率先下降后上升,空位缺陷距离冷浴边缘长度相对于整个石墨烯纳米带长度的3/10时,热导率达到最小.石墨烯纳米带热导率降低的原因主要源于结构中声子平均自由程和声子移动速度随着氮掺杂浓度、位置及空位缺陷位置的改变发生了明显变化.这些结果有利于纳米尺度下对石墨烯传热过程进行调控及为新材料的合成应用提供了理论支持.     

First-principle calculation on the defect energy level of carbon vacancy in 4H--SiC

First, electronic structures of perfect wurtzite 4H-SiC were calculated by using first-principle ultra-soft pseudo- potential approach of the plane wave based on the density functional theory; and the structure changes, band structures, and density of states were studied. Then the defect energy level of carbon vacancy in band gap was examined by substituting the carbon in 4H-SiC with carbon vacancy. The calculated results indicate the new defect energy level generated by the carbon vacancy, and its location in the band gap in 4H-SiC, which has the character of deep acceptor. A proper explanation for green luminescence in 4H-SiC is given according to the calculated results which are in good agreement with our measurement results.     

First-principles study of metallic carbon nanotubes with boron/nitrogen co-doping

Using the first-principles calculations, we investigate the electronic band structure and the quantum transport properties of metallic carbon nanotubes (MCNTs) with B/N pair co-doping. The results about formation energy show that the B/N pair co-doping configuration is a most stable structure. We find that the electronic structure and the transport properties are very sensitive to the doping concentration of the B/N pairs in MCNTs, where the energy gaps increase with doping concentration increasing both along the tube axis and around the tube, because the mirror symmetry of MCNT is broken by doping B/N pairs. In addition, we discuss conductance dips of the transmission spectrum of doped MCNTs. These unconventional doping effects could be used to design novel nanoelectronic devices.     

本征空位缺陷对ZnO:Mn体系电子特性及磁性的影响

本文采用基于密度泛函理论的第一性原理赝势法,分析了ZnO:Mn掺杂体系中本征空位缺陷V_(Zn)和V_O分别出现在相对Mn为近邻、次近邻、远次近邻位置时体系的晶体结构、能带分布、态密度和磁性.结果表明:ZnO:Mn体系中V_(Zn)比V_O更容易产生,且两种缺陷均更容易在Mn的近邻位置形成.其中V_(Zn)的出现没有明显改变ZnO:Mn体系的带隙,然而会使体系的导电性增加,且V_(Zn)与Mn的距离越远,导电性越强.同时,V_(Zn)减弱了体系的磁性,但与V_(Zn)的位置无关. V_O的出现会使体系带隙变宽,且电导率显著低于无缺陷ZnO:Mn体系,但是其导电性会随着V_O与Mn的距离变远而增强.同时,V_O的出现不会影响体系原来的磁性.     

空位结构缺陷对C纳米管弹性性质的影响

用分子动力学方法对不同空位缺陷的扶手椅型与锯齿型单壁C纳米管杨氏弹性模量进行了计算和分析. 结果表明：扶手椅型（5, 5）, （10,10）和锯齿型（9, 0）, （18, 0） 纳米管在无缺陷时其杨氏模量分别为948,901和804,860 GPa. 随管径的增大,扶手椅型和锯齿型单壁C纳米管弹性模量分别减小和增大,表现出完全不同的变化规律. 随着C纳米管中单点空位缺陷的均匀增加,杨氏模量下降,当缺陷比率增加到一定程度时,杨氏模量下降骤然趋缓,形成一下降平台;双空位缺陷对C纳米管杨氏模量的影响与其分布方向有关;随单点空位缺陷间原子数的增加,在轴向上,杨氏模量下降到某一值小幅波动,而在周向上杨氏模量先下降,然后上升到某一稳定值. 随两单点空位缺陷的空间距离进一步增大,杨氏模量又呈微降趋势. 通过分子间σ键与π键特征及缺陷间近程电子云耦合作用规律与空位缺陷内部5-1DB缺陷的形成特点等理论对上述规律进行了分析. 关键词： 空位缺陷 C纳米管 分子动力学 杨氏模量     

Oxygen vacancy in N-doped Cu2O crystals: A density functional theory study

The N-doping effects on the electronic properties of Cu2O crystals are investigated using density functional theory. The calculated results show that N-doped Cu2O with or without oxygen vacancy exhibits different modifications of electronic band structure. In N anion-doped Cu2O, some N 2p states overlap and mix with the O 2p valence band, leading to a slight narrowing of band gap compared with the undoped Cu2O. However, it is found that the coexistence of both N impurity and oxygen vacancy contributes to band gap widening which may account for the experimentally observed optical band gap widening by N doping.     

First-principles study of strain effect on the formation and electronic structures of oxygen vacancy in SrFeO_2

Motivated by recent experimental observations of metallic conduction in the quasi-two-dimensional SrFeO_2, we study the epitaxial strain effect on the formation and electronic structures of oxygen vacancy(Vo) by first-principles calculations.The bulk SrFeO_2 is found to have the G-type antiferromagnetic ordering(G-AFM) at zero strain, which agrees with the experiment. Under compressive strain the bulk SrFeO_2 keeps the G-AFM and has the trend of Mott insulator-metal transition.Different from most of the previous similar work about the strain effect on Vo, both the tensile strain and the compressive strain enhance the Vo formation. It is found that the competitions between the band energies and the electrostatic interactions are the dominant mechanisms in determining the Vo formation. We confirm that the Vo in SrFeO_2 would induce the n-type conductivity where the donor levels are occupied by the delocalized d_(x~2-y~2) electrons. It is suggested that the vanishing of n-type conductivity observed by the Hall measurement on the strained films are caused by the shift of donor levels into the conduction band. These results would provide insightful information for the realization of metallic conduction in SrFeO_2.     

Boron/nitrogen pairs Co-doping in metallic carbon nanotubes: a first-principle study

By using the first-principles calculations, the electronic structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I--V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications.     

Ce和O空位共掺杂TiO_2的电子结构与光学性质

采用基于密度泛函理论加U的计算方法,研究了Ce和O空位单(共)掺杂锐钛矿相TiO_2的电子结构和光吸收性质.计算结果表明,Ce和O空位共掺杂TiO_2的带隙中出现了杂质能级,且带隙窄化为2.67 eV,明显比纯TiO_2和Ce,O空位单掺杂TiO_2的要小,因而可提高TiO_2对可见光的响应能力,使TiO_2的光吸收范围增加.光吸收谱显示,掺杂后TiO_2的光吸收边发生了显著红移;在400.0—677.1 nm的可见光区,共掺杂体系的光吸收强度显著高于纯TiO_2和Ce单掺杂TiO_2,而略低于O空位单掺杂TiO_2.此外,Ce掺杂TiO_2中引入O空位后,TiO_2的导带边从-0.27 eV变化为-0.32 eV,这表明TiO_2的导带边的还原能力得到了加强.计算结果为Ce和O空位共掺杂TiO_2在可见光光解水方面的进一步研究提供了有力的理论依据.     

氧空穴导致二氧化钒低温相带隙变窄

具有一定能量的光照导致低温绝缘二氧化钒(VO_2)发生绝缘体金属转变.本文通过密度泛函理论的Heyd-Scuseria-Ernzerhof杂化泛函方法对含氧空穴的低温绝缘VO_2非磁M1相进行第一性原理研究.研究发现,含氧空穴的M1的晶格参数几乎不变,但氧空穴附近的长的V—V键长却变短了.进一步研究发现,尽管纯的非磁M1的带隙是0.68 eV,但含O1和O2位的氧空穴非磁M1带隙分别为0.23 eV和0.20 eV,同时含有O1和O2位氧空穴非磁M1带隙为0.15 eV,这很好地解释了实验结果.     

N空位对Cu掺杂AlN电磁性质的影响的第一性原理研究

利用基于密度泛函理论的平面波超软赝势法研究了N空位对Cu掺杂AlN的电子结构和磁学性质的影响。结果表明,与Cu最近邻的N原子更易失去形成N空位。N空位的引入减小了Cu掺杂AlN体系的半金属能隙;减弱了Cu及其近邻N原子的自旋极化的强度以及Cu3d与N2p轨道间的杂化,因而减小了体系的半金属铁磁性。因此,制备Cu掺杂AlN稀磁半导体时应尽可能地避免产生N空位。     

Effects of chromium on structure and mechanical properties of vanadium:A first-principles study

Stability and diffusion of chromium （Cr） in vanadium （V）, the interaction of Cr with vacancies, and the ideal me- chanical properties of V are investigated by first-principles calculations. A single Cr atom is energetically favored in the substitution site. Vacancy plays a key role in the trapping of Cr in V. A very strong binding exists between a single Cr atom and the vacancy with a binding energy of 5.03 eV. The first-principles computational tensile test （FPCTT） shows that the ideal tensile strength is 19.1 GPa at the strain of 18% along the [100] direction for the ideal V single crystal, while it decreases to 16.4 GPa at a strain of 12% when one impurity Cr atom is introduced in a 128-atom V supercell. For shear deformation along the most preferable { 110} （111） slip system in V, we found that one substitutional Cr atom can decrease the cleavage energy （7cl） and simultaneously increase the unstable stacking fault energy （]＇us） in comparison with the ideal V case. The reduced ratio of ]＇cl/]＇us in comparison with pure V suggests that the presence of Cr can decrease the ductility of V.     

氧空位浓度对ZnO电子结构和吸收光谱影响的研究

目前,氧空位对ZnO形成杂质能级的研究结果存在相反的结论,深杂质能级和浅杂质能级两种实验结果均有文献报道,并且,在实验中高温加热的条件下,氧空位体系ZnO中导带自由电子增加的来源认识不足.为了解决此问题,本文采用密度泛函理论框架下的第一性原理平面波超软赝势方法,建立了纯的与两种不同氧空位浓度ZnO超胞模型,分别对模型进行了几何结构优化、态密度分布、能带分布、布居值和差分电荷密度的计算.结果表明,氧空位浓度越大,系统能量越上升、稳定性越下降、形成能越高、氧空位越难、导带越向低能方向移动、电子跃迁宽度越减小、吸收光谱越红移.这对设计制备新型氧空位ZnO体系光学器件有一定的理论指导作用.     

氧空位对钴掺杂氧化锌半导体磁性能的影响

从实验和理论上阐述了氧空位对Co掺杂ZnO半导体磁性能的影响.采用磁控溅射法在不同的氧分压下制备了Zn_095Co_005O薄膜,研究了氧分压对薄膜磁性能的影响.实验结果表明,高真空条件下制备的Zn_095Co_005O薄膜具有室温铁磁性,提高氧分压后制备的薄膜铁磁性逐渐消失.第一性原理计算表明,在Co掺杂ZnO体系中引入氧空位有利于降低铁磁态的能量,铁磁态的稳定性与氧空位和Co之间的距离密切相关. 关键词： Co掺杂ZnO 稀磁半导体 第一性原理计算 氧空位缺陷     

高氧空位浓度对金红石TiO2导电性能影响的第一性原理研究

采用基于密度泛函理论的平面波超软赝势方法研究了 纯的和不同高氧空位浓度金红石型TiO_2-x (x=0, 0.083, 0.125, 0.167, 0.25)超胞的能带结构分布、态密度分布.同时, 采用局域密度近似+U方法调准了带隙.结果表明, 高氧空位浓度越高, 金红石型TiO₂的最小带隙越变窄、电子有效质量越减小, 自由电子浓度越高, 电子迁移率越低、电导率越低.计算结果与实验结果的变化趋势相符合. 关键词： 高氧空位 2')" href="#">金红石型TiO₂ 电导率 第一性原理