Eu3+掺杂的铌酸钠钾陶瓷的制备及性能研究

采用固相烧结法制备了Eu³⁺掺杂的铌酸钠钾（KNN）陶瓷。用X射线粉末衍射仪、荧光光谱测试仪和LCR精确阻抗测试仪等对其结构、发光性能和介电性能进行表征。XRD结果显示样品为钙钛矿结构。荧光分析结果表明,致密度对KNN陶瓷材料发光性能有一定的影响,Eu³⁺掺杂量是影响其发光性能的重要因素。其中掺杂Eu摩尔分数为4%的样品在930℃焙烧后其发光最强,在396 nm紫外光激发下,发射光谱最强峰在614 nm,对应于Eu³⁺的⁵D₀-⁷F₂电偶极跃迁。样品经3 kV/cm、110℃极化30 min后进行压电性能检测,结果表明提高Eu³⁺掺杂量以及陶瓷的致密度,可改善压电性能。其中掺杂4%Eu的KNN压电常数D₃₃最大为98 pC/N,在1 kHz、100℃时,介电常数最小为217,介电损耗tanθ=0.199,且仍然保持较高的居里温度T_c=426℃。     

含硫宽禁带Ga2Te3基热电半导体的声电输运特性

目前对宽禁带半导体热电材料的研究开始升温, 原因是本征情况下宽禁带半导体往往具有低的热导率和高的Seebeck系数. Ga₂Te₃ 是一类带有缺陷的宽禁带半导体, 其在临界温度680± 10 K和757± 10 K处会参与共析转变和包晶反应, 因此会产生反应热. 本次工作采用少量的S元素等电子替换Ga₂Te₃中的Te元素, 观察到在临界温度附近热焓的变化, 但没有相变发生. 受热焓变化的影响这类材料在临界温度附近出现了较活跃的声电输运行为, 具体表现为热容和Seebeck系数(α)明显增大及热扩散系数(热导率)和电导率下降. 例, 对于x=0.05的材料, 其α值从596 K 时的376.3(μV·K^-1)迅速增大到695 K时的608.2(μV·K^-1), 然后又随温度升高到764 K时迅速降低到213.8(μV·K^-1). 在596 K到812 K范围, Seebeck系数和电导率几乎随温度均呈Z字形变化. 这些输运行为的变化揭示了在Ga₂Te₃基半导体中声子和载流子的临界散射特点, 这种临界散射特征对以后的继续研究具有重要的参考价值.     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Er,Yb：(LaLu)2O3透明陶瓷制备及上转换发光性能

采用柠檬酸燃烧法制备Er,Yb：（LaLu）₂O₃陶瓷粉体,用X射线衍射对其进行了物相鉴定,研究表明1 000℃时已经得到纯相的（LaLu）₂O₃。采用冷等静压-真空烧结法制备了Er,Yb：（LaLu）₂O₃和Er：（LaLu）₂O₃陶瓷,对陶瓷的结构和光谱性能进行了详细的研究,研究发现掺杂5% Yb³⁺和10% La³⁺样品的上转换发光强度与未掺Yb³⁺、La³⁺样品相比明显增大,根据上转换光谱显示较强发射峰位于564 nm和661 nm处,对应Er³⁺的⁴S_3/2（²H_11/2）→⁴I_15/2能级跃迁和⁴F_9/2→⁴I_15/2能级跃迁,并讨论了Er³⁺-Yb³⁺的能量传递过程及其上转换发光机制。     

Study on the dielectric properties of Mg-doped NaBiTi_6O_(14) ceramics

With the interest in using lead-free materials to replace lead-containing materials increasing,the use of Na_(0.5)Bi_(0.5)TiO_3(NBT) has come into our sight.We studied the composition of NBT and found that NaBiTi_6O_(14) ceramics can be compositionally tuned by Mg-doping on the Ti-site to optimize the dielectric properties.In this study,Mg-doped NaBiTi_6O_(14)(NaBi(Ti_(0.98)Mg_(0.02))_60_(14-d)) ceramics were prepared by a conventional mixed oxide route at different sintering temperatures,and their dielectric properties have been studied at a wide temperature range.X-ray diffraction(XRD) patterns of the NBT-based ceramics indicate that all samples have a pure phase without any secondary impurity phase.The experimental data show that after Mg-doping,the relative permittivity and dielectric loss become lower at 1040,1060,and1080 ℃ except 1020 ℃ and at different frequencies from 10 kHz,100 kHz to 1 MHz.Take 1060 ℃ for example,when the sintering temperature is 1060 ℃ at 1 MHz,the minimum relative permittivity of NaBiTi_6O_(14) is 32.9 and the minimum dielectric loss is 0.01417,the relative permittivity of NaBi(Ti_(0.98)Mg_(0.02))_60_(14-δ) under the same condition is 25.8 and the dielectric loss is 0.000104.We explored the mechanism of Mg-doping and surprisingly found that the dielectric property of NaBi(Ti_(0.98)Mg_(0.02))_60_(14-δ) becomes better owing to Mg-doping.Thus,NaBi(Ti_(0.98)Mg_(0.02))_60_(14-δ) can be used in microwave ceramics and applied to new energy materials.     

Eu3+掺杂5Li2O-1Nb2O5-5TiO2发光陶瓷的制备及性能研究

以Li₂CO₃、Nb₂O₅、TiO₂和Eu₂O₃为原料,采用固相法制备Eu³⁺掺杂的5Li₂CO₃-1Nb₂O₅-5TiO₂（LNT）发光介质陶瓷。通过密度、XRD和荧光光谱测试,对0.2%（质量分数）Eu₂O₃掺杂的陶瓷片进行性能表征。结果表明：1 120℃烧结致密的陶瓷片,其晶相结构为“M-相”与Li₂TiO₃两相复合构成;在400 nm的近紫外光激发下,样品有较强的橙光（592 nm）和红光（615 nm）发射,分别属于Eu³⁺的⁵D₀→⁷F₁的磁偶极跃迁和⁵D₀→⁷F₂的电偶极跃迁。     

Validity conditions for complete and partial local thermodynamicequilibrium of nonhydrogenic level systems and their application tocopper vapor arcs in vacuum

Validity conditions for complete and partial local thermodynamic equilibrium (CLTE and PLTE) of homogeneous, time-dependent, and optically thin plasmas are derived. For Cu I, electron densities of n_e⩾(5×10²²-5×10²³ ) m^-3 are required for the establishment of CLTE. For Cu I and Cu II, n_e⩾(5×10²¹-5×10²¹ -5×10²²) m^-3 is necessary for PLTE (for electron temperatures of 1-2 eV). Application to low-current copper vapor arcs in vacuum shows that CLTE can be expected for r<200-600 μm (r=distance from the cathode spot). A further limitation follows for temperatures of 2 eV or higher if diffusion effects are taken into consideration. Consequently, the use of the LTE formulas in plasma spectroscopy of low-current vacuum arcs is very limited     

The low-temperature sintering and microwave dielectric properties of (Zn_(0.7)Mg_(0.3))TiO_3 ceramics with H_3BO_3

The effects of the addition of H 3 BO 3 on the microstructure, phase formation, and microwave dielectric properties of (Zn 0.7 Mg 0.3 )TiO 3 ceramics sintered at temperatures ranging from 890 ℃ to 950 ℃ are investigated. H 3 BO 3 as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 ℃ due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H 3 BO 3 . With the increase in H 3 BO 3 content, the dielectric constant (ε r ) monotonically increases, but the quality factor (Q × f ) reaches a maximum at 1 wt% H 3 BO 3 , and the apparent density of ZMT ceramics with H 3 BO 3 ≥ 1 wt% gradually decreases. At 950 ℃, the ZMT ceramics with 1% H 3 BO 3 exhibit excellent microwave dielectric properties: ε r = 19.8, and Q × f = 43800 GHz (8.94 GHz).     

Measurements of the behaviour of neutral atom density in a diffusevacuum arc by laser-induced fluorescence (LIF)

The method of laser-induced fluorescence was used to study the behavior of the absolute neutral vapor density of a diffuse vacuum arc on FeCu contacts. The local and temporal resolutions were 1 mm³ and 10 μs, respectively. The arc current had a sinusoidal shape of 5.8-ms duration with peak values of 90 and 510 A. It was found that the maximum densities of the iron and copper atoms are 1.2×10 ¹⁷ m^-3 and 7.5×10¹⁷ m^-3, respectively. During the arc the density was correlated with the current. At current zero the measured densities decreased to 10 ¹⁶ m^-3. After current zero, an exponential density decay with a time constant of about 100 μs was observed, indicating the recovery of dielectric strength after current zero. Measurements of the neutron iron vapor density at different spatial positions in the electrode gap reveal a nonisotropic distribution. From the measurements of the population distribution of the iron ground-state multiplet a ⁵D, the excitation temperature was derived. This temperature was low compared with the cathode spot temperature 2500-4000 K and decreased from 1600 K at the current maximum to 1000 K at current zero. The results indicate that the generation of neutrals is caused by flying evaporating metal droplets rather than by molten surface areas     

ZBLAN玻璃中Pr3+掺杂离子3P0和1D2能级的发光特性和寿命

对ZBLAN氟锆酸盐玻璃中Pr³⁺掺杂离子³P₀和¹D₂能级的寿命和发光特性进行了较详细的光谱学研究。首先测量了两种掺杂浓度(质量分数分别为1×10^-3,5×10^-3)的Pr³⁺:ZBLAN玻璃的吸收光谱,然后运用时间分辨激光光谱技术测量了³P₀和¹D₂能级在激光单光子共振激发下的荧光发射谱和能级寿命。将不同荧光发射谱带的强度和文献报道的Judd Ofelt理论计算辐射跃迁几率数值做了比较分析,证明了文献中理论计算结果的可靠性。由于浓度猝灭效应,在相同的激发条件下,掺杂浓度为1×10^-3样品的荧光发射强度明显大于5×10^-3样品的荧光发射强度。但是从我们的测量结果看,掺杂浓度对³P₀和¹D₂ 的能级寿命值无显著影响。掺杂浓度为1×10^-3时,Pr³⁺离子³P₀和¹D₂能级的寿命值分别为46,322μ_s。     

Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In_(0.24)Ga_(0.76)As_(0.21)Sb_(0.79)bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10~(-5)A/cm~2at 500 mV,thereby providing a detectivity of 1.55×10~(11)cm·Hz~(1/2)/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10~(-3)A/cm~2at-300 mV,thereby resulting in a detectivity of 2.71×10~(10)cm·Hz~(1/2)/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.     

Measurement of the tungsten ion concentration after forcedextinction of a vacuum arc

The concentrations of singly ionized and neutral tungsten atoms were measured by laser-induced fluorescence after the forced extinction of vacuum arcs between tungsten-copper butt contacts, 28-mm in diam. and 10-mm apart. The 50-Hz current was forced to zero at its maximum of 200 A in 1.3 μs by application of a reverse voltage. Near current zero, the ion concentration of 4×10¹⁷ m^-3 is of the same order of magnitude as the atomic tungsten concentration, which is 6×10¹⁷ m^-3. While the concentration of the neutrals remains virtually constant during 20 μs after current zero, the ion concentration decays by three orders of magnitude in the same time. The decay-time constant varies from 1.9 μs close to the postarc cathode to 3.6 μs near the postarc anode. It is concluded that the dielectric recovery of vacuum gaps after diffuse arcs is mainly controlled by residual charge carriers     

Metal vapor densities and excitation temperatures in a pseudosparkswitch

The densities of iron, tungsten, copper, and nickel vapors produced by pseudosparks in a switch-like configuration are measured by laser-induced fluorescence. The cathode is made of a composite material essentially consisting of tungsten, but also containing the other metals mentioned. Total vapor densities are calculated from ground state densities using the excitation temperature of iron, which decays from 1900 K at 9 μs after initiation of the discharge to 600 K about 150 μs later. With maximum copper and tungsten vapor densities of 1.5×10¹⁸ m^-3 and 2×10¹⁷ m ^-3, respectively, the composition of metal vapor differs considerably from that of the cathode material. Iron and nickel vapors are present with densities in the range of 10¹⁶ m^-3. By comparison of vapor density ratios with vapor pressure ratios it is found that regions with temperatures in excess of 5000 K exist on the cathode. These are attributable to emission sites providing the electrons for current conduction. The vapor densities are roughly proportional to the current amplitude, while the gas pressure has practically no influence between 15 and 30 Pa     

稀土离子(Eu3+,Tb3+,Ce3+)掺杂ZnAl2O4/SiO2微晶玻璃的制备与发光性能

采用凝胶法分别制备出4.5ZnO-5.5Al₂O₃-90SiO₂(ZAS)以及ZAS[DK]:RE³⁺ (RE=Eu,Tb,Ce) 透明微晶玻璃。利用X射线衍射仪(XRD)、透射电子显微镜(TEM)和荧光光谱仪(PL)等测试手段,研究了稀土离子掺杂浓度对ZAS微晶玻璃的结构和发光性能的影响。XRD结果表明,ZAS[DK]:RE³⁺ (RE=Eu,Tb,Ce)微晶玻璃包含ZnAl₂O₄晶相和SiO₂非晶相,ZnAl₂O₄平均晶粒尺寸约为30 nm,稀土离子的掺杂没有显著改变原来的ZnAl₂O₄晶体结构。TEM结果表明,900 ℃时ZnAl₂O₄从ZAS体系中析出。PL光谱显示,Eu³⁺ 存在 ⁵D₀→⁷F₂跃迁,ZAS[DK]:Eu³⁺在611 nm 处发出强烈的红色光;由于Tb³⁺ 的⁵D₄→⁷F₅ 跃迁,ZAS[DK]:Tb³⁺在541 nm 处发出明亮的绿色光;ZAS[DK]:Ce³⁺ 在381 nm处显示了蓝光发射,对应于Ce³⁺ 的5d→4f 轨道跃迁。ZAS[DK]:RE³⁺ (RE=Eu, Tb, Ce)的PL发射光谱存在着浓度猝灭现象,Eu³⁺、Tb³⁺ 和Ce³⁺的最佳单掺杂摩尔分数分别为20%、20%和3%。CIE色度图表明,ZAS[DK]: RE³⁺ (RE=Eu,Tb,Ce)的色坐标分别位于红光、绿光和蓝光区域。实验结果表明,ZAS:RE³⁺ (RE=Eu,Tb,Ce) 微晶玻璃是一种良好的可用于全色显示的白光LED材料。     

Field-induced insulator-metal-insulator transitions in low-energy H_2~+ ion-irradiated epitaxial La_(2/3)Ca_(1/3)MnO_3 thin films

Epitaxial La 2/3 Ca 1/3 MnO 3 thin films grown on LaAlO 3 (001) substrates were irradiated with low-energy 120-keV H 2 + ions over doses ranging from 10 12 ions/cm 2 to 10 17 ions/cm 2 . The irradiation suppresses the intrinsic insulator-metal (I-M) transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 × 10 15 ions/cm 2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

无锂助熔剂B_2O_3对Li_(1.3)Al_(0.3)Ti_(1.7)(PO_4)_3固体电解质离子电导率的影响

采用固相法制备锂离子电池用固体电解质磷酸钛锂铝Li_(1.3)Al_(0.3)Ti_(1.7)(PO_4)_3(LATP),研究了不同烧结温度以及助熔剂对LATP固体电解质离子电导率的影响.采用X射线衍射、能谱分析、扫描电镜和交流阻抗等方法,研究样品的结构特征、元素含量、形貌特征以及离子导电性能.结果表明,在900?C烧结可以获得结构致密、离子电导率较高的纯相LATP陶瓷固体电解质.与添加助熔剂Li BO2的样品进行对比实验发现,采用B_2O_3代替LiBO_2作为助熔剂也可以提高烧结样品的离子电导率,并且电解质的离子电导率随助熔剂添加量的增大,先增大后减小,其中添加质量百分比为2%的B_2O_3的样品具有最高的室温离子电导率,为1.61×10~(-3)S/cm.     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×10¹⁸cm^-3增大到6.5×10¹⁸cm^-3,p型AlGaInP层的空穴浓度由6.0×10¹⁷cm^-3增大到1.1×10¹⁸cm^-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10¹⁷cm^-3和1.7×10¹⁷cm^-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.     

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_(1-x)As/In_(0.52)Al_(0.48)As HEMT structures

The structure of In P-based In_xGa_(1-x) As/In0.52Al0.48 As pseudomorphic high electron mobility transistor(PHEMT)was optimized in detail.Effects of growth temperature,growth interruption time,Si δ-doping condition,channel thickness and In content,and inserted Al As monolayer(ML) on the two-dimensional electron gas(2DEG) performance were investigated carefully.It was found that the use of the inserted Al As monolayer has an enhancement effect on the mobility due to the reduction of interface roughness and the suppression of Si movement.With optimization of the growth parameters,the structures composed of a 10 nm thick In0.75Ga0.25 As channel layer and a 3 nm thick Al As/In0.52Al0.48 As superlattices spacer layer exhibited electron mobilities as high as 12500 cm~2·V-1·s~(-1)(300 K) and 53500 cm~2·V~(-1_·s~(-1)(77 K) and the corresponding sheet carrier concentrations(Ns) of 2.8×10~(12)cm~(-2)and 2.9×1012cm~(-2),respectively.To the best of the authors' knowledge,this is the highest reported room temperature mobility for In P-based HEMTs with a spacer of 3 nm to date.     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

多孔钛酸钡陶瓷制备及其增强的压电灵敏性

在压电陶瓷中增加孔洞数量,可以有效改善陶瓷的静水压优值,提高其压电灵敏性.考虑到铅基压电陶瓷对环境和人体的危害,本文以糊精为造孔剂,采用传统固相烧结法制备无铅钛酸钡(BaTiO_3)多孔压电陶瓷.研究烧结温度(1250,1280,1300℃)和糊精含量(5%,10%,15%)对BaTiO_3陶瓷晶体结构、孔隙率以及孔形貌特征的影响,探索孔隙率与BaTiO_3陶瓷介电、压电、声阻抗以及静水压优值等性能之间的相关性.结果表明:所有多孔陶瓷表现出三维贯通的开气孔,尺寸约为1—7μm.烧结温度强烈影响BaTiO_3陶瓷的孔隙率,加入10%低沸点的糊精时,1250℃和1280℃烧结均获得孔隙率高达58%的多孔BaTiO_3陶瓷;然而1300℃烧结,陶瓷孔隙率急速下降到13%.1250℃烧结10%糊精含量的陶瓷表现出高的静水压优值(约8376×10~/(-15)Pa~(-1))和低的声阻抗(约2.84MRrayls(1Rayl=10Pa·s/m)).与1250℃相比,1280℃烧结的陶瓷晶粒之间的结合力明显增强,有利于提高陶瓷的力学强度.这些优异的性能预示着多孔钛酸钡陶瓷在传感器和水听器领域有着潜在的应用前景.