Quantum oscillations and nontrivial transport in(Bi_(0.92)In_(0.08))_2Se_3

Quantum phase transition in topological insulators has drawn heightened attention in condensed matter physics and future device applications.Here we report the magnetotransport properties of single crystalline(Bi_(0.92)In_(0.08))_2Se_3.The average mobility of～1000 cm~2·V~(-1)·s~(-1)is obtained from the Lorentz law at the low field(3 T)up to 50 K.The quantum oscillations rise at a field of～5 T,revealing a high mobility of～1.4×10~4cm~2·V~(-1)·s~(-1)at 2 K.The Dirac surface state is evident by the nontrivial Berry phase in the Landau–Fan diagram.The properties make the(Bi_(0.92)In_(0.08))_2Se_3a promising platform for the investigation of quantum phase transition in topological insulators.     

Spin-polarized tunneling in nanostructured La2/3Sr1/3MnO3

We present magnetic and transport properties of nanocrystalline La_2/3Sr_1/3MnO₃ powders prepared by a gel-combustion method using citric acid as the fuel. The coercive magnetic field H_c is significantly different to the field H_c^* for which the magnetoresistance (MR) is maximum. The MR at low fields (LFMR) exhibits a power-law dependence with magnetization, MR∝Mⁿ, with n=2.5–3.3 for temperatures ranging from 5 to 200 K. The results are discussed in terms of a distribution of particle size in our sample.     

Emerging weak antilocalization effect in Ta0.7Nb0.3Sb2 semimetal single crystals

Weak antilocalization (WAL) effect is commonly observed in low-dimensional systems, three-dimensional (3D) topological insulators and semimetals. Here, we report the growth of high-quality Ta_0.7Nb_0.3Sb₂ single crystals via the chemical vapor transport (CVT). Clear sign of the WAL effect is observed below 50 K, probably due to the strong spin−orbital coupling in 3D bulk. In addition, it is worth noting that a relatively large MR of 120% appears under 1 T magnetic field at T = 2 K. Hall measurements and two-band model fitting results reveal high carrier mobility (>1000 cm²·V⁻¹·s⁻¹ in 2–300 K region), and off-compensation electron/hole ratio of ~8:1. Due to the angular dependence of the WAL effect and the fermiology of the Ta_0.7Nb_0.3Sb₂ crystals, interesting magnetic-field-induced changes of the symmetry of the anisotropic magnetoresistance (MR) from two-fold (≤ 0.6 T) to four-fold (0.8–1.5 T) and finally to two-fold (≥ 2 T) are observed. This phenomenon is attributed to the mechanism shift from the low-field WAL dominated MR to WAL and fermiology co-dominated MR and finally to high-field fermiology dominated MR. All these signs indicate that Ta_0.7Nb_0.3Sb₂ may be a topological semimetal candidate, and these magnetotransport properties may attract more theoretical and experimental exploration of the (Ta,Nb)Sb₂ family.     

Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystal

The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions, and large non-saturation magnetoresistance. In this paper, we have successfully grown the high-quality V_1-δSb₂ single crystals by Sb flux method and investigated their electronic transport properties. A large positive magnetoresistance that reaches 477% under a magnetic field of 12 T at T = 1.8 K was observed. Notably, the magnetoresistance showed a cusp-like feature at the low magnetic fields and such feature weakened gradually as the temperature increased, which indicated the presence of a weak antilocalization effect (WAL). In addition, based upon the experimental and theoretical band structure calculations, V_1-δSb₂ is a research candidate for a flat band.     

Large positive magnetoresistance in photocarrier-doped potassium tantalites

We report on the high-field magnetotransport of KTaO₃ single crystals, which are a promising candidate for study in the extreme quantum limit. By photocarrier doping with 360 nm light, we observe a significant positive, non-saturating, and linear magnetoresistance at low temperatures accompanied by a decreasing Hall coefficient. When cooling down to 10 K, the magnetoresistance value of KTaO₃ (100) reaches ～ 433% at a magnetic field of 12 T. Such behavior can be attributed to all the electrons occupying only the lowest Landau level in the extreme quantum limit. Light inhomogeneity may also contribute to large linear magnetoresistance. These results provide insights into novel magnetic devices based on complex materials and add a new family of materials with positive magnetoresistance.     

Positive linear magnetoresistance in Fex–C1−x composites

A large positive magnetoresistance (MR) has been found in micro-sized Fe_x–C_1−x composites. At a magnetic field of 5 T, the Fe_0.2–C_0.8 composite has the largest MR, 53.8% and 190% at room temperature and at 5 K, respectively. The magnetic field dependence of the MR can be described approximately as MR∝Bⁿ, and the value of exponent n is determined by the Fe weight concentration and temperature, ranging from 1/4 to 6/4. It appears that Fe_x–C_1−x has a linear field dependence of the positive MR at different temperatures. The possible mechanism for the positive MR is discussed.     

Flux creep and flux flow for thallium ceramics in a pulsed magnetic field

The resistive properties of Tl-ceramics with T_c|=0=114 K were investigated in a pulsed magnetic field (B) up to 30 T and in the temperature range of 4.2 K<T<140 K. It was shown that the character of the field dependence of the resistance differs qualitatively in high-and low-temperature regions. At low (T80K) temperatures the dynamic magnetoresistance arising in the sample is analogous to that observed earlier in LaSrCuO [1] and YBaCuO [2] ceramics. This magnetoresistance is defined by the magnetic field variation rate and leads to the appearance of a minimum at the maximum of the magnetic field pulse, i.e. at . In the region of high temperatures (80 K T<T_c) or magnetic fields (at T60K) the sample resistance rises monotonically with B increase, and dynamic resistance is not observed. In this temperature range the existence of a scaling relation is shown (here B^* and T^* meet the condition k=(B^*, T^*)/ _n(T^*)=const) for the ceramics resistance (B,T), which can be represented as . An estimate for the upper critical field B_c2(0)B_o=1030±40 T is obtained.     

Unexpected low thermal conductivity and large power factor in Dirac semimetal Cd_3As_2

Thermoelectrics has long been considered as a promising way of power generation for the next decades. So far,extensive efforts have been devoted to the search of ideal thermoelectric materials, which require both high electrical conductivity and low thermal conductivity. Recently, the emerging Dirac semimetal Cd3As2, a three-dimensional analogue of graphene, has been reported to host ultra-high mobility and good electrical conductivity as metals. Here, we report the observation of unexpected low thermal conductivity in Cd3As2, one order of magnitude lower than the conventional metals or semimetals with a similar electrical conductivity, despite the semimetal band structure and high electron mobility. The power factor also reaches a large value of 1.58 m W·m-1·K-2at room temperature and remains non-saturated up to 400 K.Corroborating with the first-principles calculations, we find that the thermoelectric performance can be well-modulated by the carrier concentration in a wide range. This work demonstrates the Dirac semimetal Cd3As2 as a potential candidate of thermoelectric materials.     

顺磁性La2/3Sr1/3MnO3层对Bi0.8Ba0.2FeO3薄膜多铁性能的影响

界面效应在提升异质结构材料的多铁性能方面有着重要的作用. 本文采用脉冲激光沉积技术在SrTiO₃(STO)基片上制备了Bi_0.8Ba_0.2FeO₃(BBFO)/La_2/3Sr_1/3MnO₃(LSMO)异质结. X-射线衍射图谱表明异质结呈现单相外延生长, 利用高分辨透射电镜进一步证实了BBFO为四方相结构. X-射线光电子能谱证实异质结中只存在Fe³⁺ 离子, 没有产生价态的变化, 揭示了异质结铁电和铁磁性的增强与BBFO/LSMO的界面有关. 同时, 测试了磁电阻(MR)和磁介电(MD), 当磁场强度为0.8 T, 温度为70 K时, MR约为-42.2%, MD约为21.2%. 并且发现在180 K时出现磁相的转变. 实验结果揭示出异质界面效应在提升材料的多铁性和磁电耦合效应方面具有超常的优点, 是加快多铁材料实际应用的有效途径.     

拓扑量子材料光电探测器研究进展

物质拓扑态的发现是近年来凝聚态物理和材料科学的重大突破.由于存在不同于常规半导体的特殊拓扑量子态(如狄拉克费米子、外尔费米子、马约拉纳费米子等),拓扑量子材料通常能表现出一些新颖的物理特性(如量子反常霍尔效应、三维量子霍尔效应、零带隙的拓扑态、超高的载流子迁移率等),因而在低能耗电子器件和宽光谱光电探测器件领域具有重要...     

Long-distance super-exchange and quantum magnetic relaxation in a hybrid metal–organic framework

The hybrid metal–organic framework [(CH3)2NH2]Fe(HCOO)3with a perovskite-like structure exhibits a variety of unusual magnetic behaviors at low temperatures. While the long-distance super-exchange through the Fe-O–CH-O–Fe exchange path leads to a canted antiferromagnetic ordering at TN～ 19 K, a second transition of magnetic blocking develops at TB～ 9 K. The stair-shaped magnetization hysteresis loops below TBresemble the behaviors of resonant quantum tunneling of magnetization in single-molecular quantum magnets. Moreover, the magnetic relaxation also exhibits several features of resonant quantum relaxation, such as the exponential law with a single characteristic relaxation time, and the nonmonotonic dependence of relaxation rate on the applied magnetic field with a much faster relaxation around the resonant fields. The origin of quantum tunneling behaviors in the [(CH3)2NH2]Fe(HCOO)3metal–organic framework is discussed in terms of magnetic phase separation due to the modification of hydrogen bonding on the long-distance super-exchange interaction.     

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

Abstract

The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on anSiO₂/Si substrate have been investigated using the Shubnikov–de Haas (SdH) oscillations technique. The magnetoresistance measurements were performed in the temperature range between 1.8 and 43 K and at magnetic fields up to 11 T. The 2D carrier density and the Fermi energy have been determined from the period of the SdH oscillations. In addition, the in-plane effective mass as well as the quantum lifetime of 2D carriers have been calculated from the temperature and magnetic field dependences of the SdH oscillation amplitude. The sheet carrier density (1.42 × 10¹³ cm^?2 at 1.8 K), obtained from the low-field Hall Effect measurements, is larger than that of 2D carrier density (8.13 × 10¹² cm^?2). On the other hand, the magnetoresistance includes strong magnetic field dependent positive, non-oscillatory background magnetoresistance. The strong magnetic field dependence of the magnetoresistance and the differences between sheet carrier and 2D carrier density can be attributed to the 3D carriers between the graphene sheet and the SiO₂/Si substrate.     

Transport evidence of 3D topological nodal-line semimetal phase in ZrSiS

Topological nodal-line semimetal is a new emerging material, which is viewed as a three-dimensional (3D) analog of graphene with the conduction and valence bands crossing at Dirac nodes, resulting in a range of exotic transport properties. Herein, we report on the direct quantum transport evidence of the 3D topological nodal-line semimetal phase of ZrSiS with angular-dependent magnetoresistance (MR) and the combined de Hass-van Alphen (dHvA) and Shubnikov-de Hass (SdH) oscillations. Through fitting by a two-band model, the MR results demonstrate high topological nodal-line fermion densities of approximately 6×10²¹ cm⁻³ and a perfect electron/hole compensation ratio of 0.94, which is consistent with the semi-classical expression fitting of Hall conductance Gxy and the theoretical calculation. Both the SdH and dHvA oscillations provide clear evidence of 3D topological nodal-line semimetal characteristic.     

Linear and nonlinear critical magnetic properties and transport in Nd0.75Ba0.25MnO3 single crystal: evidence for its anomalous critical behavior near TC

The data on the resistance and magnetoresistance (MR) as well as measurements of the linear and nonlinear susceptibilities are presented for a Nd_0.75Ba_0.25MnO₃ single crystal with the Curie temperature T_C≈129 K. Although this compound remains insulating in the ferromagnetic state, its resistance has an anomaly near T_C and it reveals the colossal magnetoresistance. The data on the magnetic response are well described by the dynamic scaling theory for 3D isotropic ferromagnets in the paramagnetic critical region at τ>τ^*≈0.11, τ=(T−T_C)/T_C. Below τ^* an anomalous critical behavior is found that suggests the coexistence of two magnetic phases. This behavior is discussed in terms of a phase separation which can occur in the moderately doped manganites exhibiting an orbital ordering.     

离子凝胶薄膜栅介石墨烯场效应管

在石墨烯场效应晶体管栅介结构中引入具有良好电容特性或极化特性的材料可改善晶体管性能.本文采用化学气相沉积制备的石墨烯并以PVDF-[EMIM]TF2N离子凝胶薄膜(ion-gel film)作为介质层制备底栅型石墨烯场效应管(graphene-based field effect transistor, GFET),研究其电学特性以及真空环境和温度对GFET性能的影响.结果表明离子凝胶薄膜栅介石墨烯场效应晶体管表现出良好的电学特性,室温空气环境中,与SiO_2栅介GFET相比, ion-gel膜栅介GFET开关比(J_(on)/J_(off))和跨导(g_m)分别提高至6.95和3.68×10~(–2) mS,而狄拉克电压(V_(Dirac))低至1.3 V;真空环境下ion-gel膜栅介GFET狄拉克电压最低可降至0.4 V;随着温度的升高, GFET的跨导最高可提升至6.11×10~(–2) mS.     

拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中的线性磁阻

本文报道了拓扑绝缘体(Bi_0.5Sb_0.5)₂Te₃薄膜中线性磁阻问题的系统性研究工作. 此体系中, 线性磁阻在很宽的温度和磁场范围内出现: 磁场高达18 T时磁阻仍没有饱和趋势, 并且当温度不高于50 K时, 线性磁阻的大小对温度的变化不敏感. 栅压调控化学势可明显改变线性磁阻的大小. 当化学势接近狄拉克点时, 线性磁阻最为显著. 这些结果说明电荷分布的不均匀性是引起该材料线性磁阻的根源.     

Spin-dependent transport in trilayer junctions of doped manganites

Trilayer junctions of doped manganites provide a model system for the study of spin-polarized transport across a half metallic interface. Novel phenomena observed in these systems include a large low-field magnetoresistance (MR), with nearly an order of magnitude change in junction resistance in 100 Oe at 14 K, and a strong temperature and bias dependence of the junction MR. They also enabled the first demonstration of a spin-angular momentum transfer-induced reversal of a magnetic moment. Systems containing both manganite and transition metal ferromagnetic electrodes demonstrate a complex interface structure between the perovskite oxide such as SrTiO₃ and the transition metal electrode such as Co or Fe. It reveals the important effect this interface has on the magnetotransport property of the junction.     

Performance at 10–50 K of Bi-2212/Ag multilayer tape fabricated by using pre-annealing and intermediate rolling process

High-transport critical current density (J_c-oxide)>500 kA/cm² at 4.2 K, 10 T can be obtained for Bi-2212/Ag tapes fabricated by using pre-annealing and intermediate rolling (PAIR) and melt-solidification process. In this paper, we report high-temperature properties of PAIR-processed Bi-2212/Ag multilayer tape in order to show their potential for practical applications operated at cryocooling temperatures. Magnetic field dependence and angular dependence of critical current (I_c) are investigated at temperatures ranging 10–50 K by using helium gas cooling and liquid neon. Field-temperature curves for I_c=0.2 and 2.0 A are also determined in order to show the approximation of the irreversible field. High-temperature performance of the tape is attractive to consider future applications. For example, the best sample carries I_c=267 A (engineering-J_c=303 A/mm², J_c-oxide=151 kA/cm²) and 92 A (104 A/mm², 52 kA/cm²) at 27.1 K (in liquid neon), in magnetic fields (parallel to the tape surface) of 2 and 10 T, respectively. Engineering-J_c of 100 A/mm² is obtained even in the perpendicular field of 0.5 T at 27.1 K.     

Total Quantum Statistical Entropy of Reissner-Nordstrom Black Holes: in Dirac Field Case

The total quantum statistical entropy of Reissner-Nordstrom black holes in Dirac field case is evaluated in this article. The space-time of the black holes is divided into three regions: region 1 (r>r_o), region 2 ( r_o > r > r_i), and region 3 (r_i >r>0), where r_o is the radius of the outer event horizon, and r_i is the radius of the inner event horizon. The total quantum statistical entropy of Reissner-Nordstrom black holes is S=S₁+S₂+S₃, where S_i (i=1,2,3) is the entropy, contributed by regions 1,2,3. The detailed calculation shows that S₂ is neglectfully small. S₁=w_t(π²/45)k_b(A_o/ε²β³), S₃=-w_t(π²/45)k_b(A_i/ε²β³), where A_o and A_i are, respectively, the areas of the outer and inner event horizons, w_t=2^s[1- 2^-(s+1)], s=d/2, d is the space-time dimension, here d=4, s=2. As r_i approaches r_o in the extreme case the total quantum statistical entropy of Reissner-Nordstrom black holes approaches zero.     

耦合Majorana束缚态T形双量子点中的Andreev反射

研究了连接在正常金属电极和超导电极之间的耦合Majorana束缚态(MBSs)T形双量子点结构中的Andreev反射.研究发现,对于T形双量子点结构,当入射能量等于边耦合量子点能级时Andreev反射电导出现Fano振荡,连接MBSs之后,零费米能附近出现一对新的Fano型振荡峰.如果忽略两个MBSs之间的相互作用,零费米能点的Andreev反射电导为定值1/2G_0(G_0=2e~2/h),不受量子点能级、双量子点之间耦合强度以及量子点与MBSs之间的耦合强度的影响.此外,在没有耦合MBSs的T形双量子点结构中,调节双量子点间的耦合强度可以使零费米能附近的Andreev反射电导出现由共振带向反共振带的转变,而耦合MBSs之后,又可以使反共振消失转而出现新的共振峰.