Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

The N₂O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N₂O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10^-9 A/mm, high on/off current ratio of 10⁸, and high f_T×L_g of 13.44 GHz· μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.     

开态应力下电压和电流对AlGaN/GaN高电子迁移率晶体管的退化作用研究

通过采集等功率的两种不同开态直流应力作用下AlGaN/GaN高电子迁移率晶体管(HEMTs)漏源电流输出特性、源区和漏区大信号寄生电阻、转移特性、阈值电压随应力时间的变化, 并使用光发射显微镜观察器件漏电流情况, 研究了开态应力下电压和电流对AlGaN/GaN高电子迁移率晶体管的退化作用. 结果表明, 低电压大电流应力下器件退化很少, 高电压大电流下器件退化较明显. 高电压是HEMTs退化的主要因素, 栅漏之间高电场引起的逆压电效应对参数的永久性退化起决定性作用. 除此之外, 器件表面损坏部位的显微图像表明低电压大电流下器件失效是由于局部电流密度过高, 出现热斑导致器件损伤引起的.     

Anomalous temperature dependence of magnetization in polycrystalline Fe65Ni35 alloy

Magnetization at 0.3 and 140 Hz (0–10 Oe) and magnetic relaxation measurements were carried out in detail in the temperature range between 4.2 and 300 K for a polycrystalline Fe₆₅Ni₃₅ alloy. The typical temperature T_g and the magnetic field H_g which correspond to the anomalous temperature in χ-T curves and inflection field in σ-H curves, respectively, are summarized and a H-T diagram is obtained. A strong magnetic relaxation is observed along the H_g-T line. The temperature dependence of H_g is discussed by the thermal activation of 180° domain wall which is pinned strongly by the antiferromagnetic-like clusters below T_g. It is find that H _g is a linear function of T .     

Dy,Co共掺杂对BiFeO3陶瓷磁特性和磁相变温度Tc的影响

采用快速液相烧结法制备BiFeO₃和Bi_0.95Dy_0.05Fe_1-xCo_xO₃ (x=0, 0.05, 0.1, 0.15)陶瓷样品. 实验结果表明: 所有样品的主衍射峰与纯相BiFeO₃相符合且具有良好的晶体结构, 随着Co³⁺掺杂量的增大, Bi_0.95Dy_0.05Fe_1-xCo_xO₃样品的主 衍射峰由双峰(104)与(110)逐渐重叠为单峰(110), 当掺杂量x>0.05时, 样品呈现正方晶系结构; SEM形貌分析可知: Dy³⁺, Co³⁺共掺杂使BiFeO₃晶粒尺度由原来的3—5 μ减小到约1 μ. 室温下, BiFeO₃样品表现出较弱的铁磁性, 随着Dy³⁺和Co³⁺掺杂, BiFeO₃样品的铁磁性显著提高. 在外加磁场为30 kOe的作用下, Bi_0.95Dy_0.05Fe_1-xCo_xO₃ (x=0.05, 0.1, 0.15)的M_r分别为0.43, 0.489, 0.973 emu/g; M_S分别为0.77, 1.65, 3.08 emu/g. BiFeO₃和Bi_0.95Dy_0.05Fe_1-xCo_xO₃样品磁矩M随着温度T的升高而逐渐减小, Dy掺杂使BiFeO₃样品的T_N由644 K升高到648 K, 而T_C基本没有变化. Dy和Co共掺杂导致BiFeO₃样品磁相变温度T_C由870 K降低到780 K, 其T_C变化主要取决于Fe-O-Fe反铁磁超交换作用的强弱和磁结构的相对稳定性. 关键词： 铁磁电材料 磁滞回线 磁相变温度     

Anomalous temperature dependence of magnetization in single-crystal Fe65Ni35 alloy

Magnetization (0–10 Oe) and magnetic relaxation measurements were carried out in the temperature range between 4.2 and 300 K for three picture-frame samples of Fe₆₅Ni₃₅ alloy whose edges were parallel to 100, 110 and 111, respectively. The typical temperature T_g and the magnetic field H_g which correspond to the anomalous temperature in the χ-T curve and inflection field in the σ-H curve, respectively are summarized and H-T_g and H_g-T diagrams are obtained. A strong magnetic relaxation is observed along the H_g-T line. The dependence of H_g on the crystallographic direction and on the temperature are discussed by the thermal activation process of the 180° domain wall which is pinned strongly by the antiferromagnetic clusters below T_g. The anomaly of magnetization of Fe₆₅Ni₃₅ alloy can be interpreted by the macroscopic picture of the coexistence of ferromagnetic and antiferromagnetic-like regions which may be caused by a statistical fluctuation of alloy composition.     

Numerical study on the gas heating mechanism in pulse-modulated radio-frequency glow discharge

The gas heating mechanism in the pulse-modulated radio-frequency(rf) discharge at atmospheric pressure was investigated with a one-dimensional two-temperature fluid model. Firstly, the spatiotemporal profiles of the gas temperature(T_g)in both consistent rf discharge and pulse-modulated rf discharge were compared. The results indicated that T_gdecreases considerably with the pulse-modulated power, and the elastic collision mechanism plays a more important role in the gas heating change. Secondly, the influences of the duty cycle on the discharge parameters, especially on the T_g, were studied.It was found that T_gdecreases almost linearly with the reduction of the duty cycle, and there exists one ideal value of the duty cycle, by which both the T_gcan be adjusted and the glow mode can be sustained. Thirdly, the discharge mode changing from α to γ mode in the pulse-modulated rf discharge was investigated, the spatial distributions of T_gin the two modes show different features and the ion Joule heating is more important during the mode transition.     

聚酰亚胺/功能化石墨烯复合材料力学性能及玻璃化转变温度的分子动力学模拟

应用分子模拟方法,建立了聚酰亚胺(polyimide,PI),石墨烯及羧基、氨基、羟基功能化石墨烯模型,探究了聚酰亚胺和石墨烯,聚酰亚胺和功能化石墨烯共混后复合材料的力学性能和玻璃化转变温度(T_g).研究结果表明,羧基修饰的石墨烯与PI复合后材料力学性能增加显著,其杨氏模量和剪切模量分别为4.946 GPa和1.816 GPa.不同官能团修饰的石墨烯引入PI后材料的T_g均有不同程度下降;未修饰的石墨烯与PI复合后,其T_g(559.30 K)较纯PI的T_g(663.57 K)降幅最大;而羧基修饰的石墨烯与PI复合后T_g(601.61 K)降幅最小.计算比较了PI/石墨烯复合材料体系密度、溶解度参数、相互作用能、弹性系数和氢键平均密度,研究发现羧基修饰石墨烯/PI复合材料的密度为1.396 g·cm~(-3),溶解度参数为23.51 J~(1/2)·cm~(-3/2),其相互作用能与氢键平均密度最大,弹性系数显示羧基修饰石墨烯与PI组成的复合材料内部最均匀.计算结果表明,羧基功能化石墨烯可以大幅度提高PI的力学性能,增强石墨烯与PI之间的相互作用可以减少复合材料T_g的降幅程度.此基体间相互作用的研究方法可以作为预测聚合物基纳米复合材料结构与性能的有效工具,以期为材料的设计与应用提供理论指导.     

Zn吸附到含有氧空位(VO)以及羟基(-OH)的锐钛矿相TiO2(101)表面电子结构的第一性原理计算

基于密度泛函理论的第一性原理平面波超软赝势方法, 计算了Zn吸附到TiO₂(101)清洁表面、含有氧空位(V_O)的缺陷表面以及既含有氧空位(V_O)又含有羟基(-OH)表面的能量、Mulliken重叠布居数以及电子结构, 并找到了Zn在每种表面的最稳定结构(分别为模型(c), 模型(aI)以及模型(aII)). 通过对三种表面稳定结构的分析、对比发现: 首先, Zn原子吸附到清洁TiO₂(101)表面上, 主要与表面氧相互作用, 形成Zn–O共价键; 其次, 当Zn原子吸附到缺陷表面时, 吸附能减小到-1.75 eV, 说明Zn更容易吸附到氧空位上(模型(aI)); 最后, 纵观表面模型的能带结构以及态密度图发现, -OH的引入并没有引进新的杂质能级, Zn吸附此表面, 即Zn-TiO₂-V_O-OH, 使得禁带宽度缩短到最小(1.85 eV), 从而有望提高TiO₂的光催化活性. 关键词： 密度泛函理论 氧空位 羟基 Zn原子     

Gate-controlled magnetic transitions in Fe_3GeTe_2 with lithium ion conducting glass substrate

Since the discovery of magnetism in two dimensions,effective manipulation of magnetism in van der Waals magnets has always been a crucial goal.Ionic gating is a promising method for such manipulation,yet devices gated with conventional ionic liquid may have some restrictions in applications due to the liquid nature of the gate dielectric.Lithium-ion conducting glass-ceramics(LICGC),a solid Li~+ electrolyte,could be used as a substrate while simultaneously acts as a promising substitute for ionic liquid.Here we demonstrate that the ferromagnetism of Fe_3 GeTe_2(FGT) could be modulated via LICGC.By applying a voltage between FGT and the back side of LICGC substrate,Li~+ doping occurs and causes the decrease of the coercive field(H_c) and ferromagnetic transition temperature(T_c) in FGT nanoflakes.A modulation efficiency for of up to ～ 24.6% under V_g=3.5 V at T=100 K is achieved.Our results provide another method to construct electrically-controlled magnetoelectronics,with potential applications in future information technology.     

Ni/Au/n-GaN肖特基二极管可导位错的电学模型

可导线性位错被普遍认为是GaN基器件泄漏电流的主要输运通道,但其精细的电学模型目前仍不清楚.鉴于此,本文基于对GaN肖特基二极管的电流输运机制分析提出可导位错的物理模型,重点强调:1)位于位错中心的深能级受主态(主要Ga空位)电离后库仑势较高,理论上对泄漏电流没有贡献; 2)位错周围的高浓度浅能级施主态电离后能形成势垒高度较低的薄表面耗尽层,可引发显著隧穿电流,成为主要漏电通道;3)并非传统N空位,认为O替代N所形成的浅能级施主缺陷应是引发漏电的主要电学态,其热激活能约为47.5 meV.本工作亦有助于理解其他GaN器件的电流输运和电学退化行为.     

AlGaN/GaN 高电子迁移率晶体管漏电流退化机理研究

本文首先制备了与AlGaN/GaN高电子迁移率晶体管 (HEMT) 结构与特性等效的AlGaN/GaN异质结肖特基二极管, 采用步进应力测试比较了不同栅压下器件漏电流的变化情况, 然后基于电流-电压和电容-电压测试验证了退化前后漏电流的传输机理, 并使用失效分析技术光发射显微镜 (EMMI) 观测器件表面的光发射, 研究了漏电流的时间依赖退化机理. 实验结果表明: 在栅压高于某临界值后, 器件漏电流随时间开始增加, 同时伴有较大的噪声. 将极化电场引入电流与电场的依赖关系后, 器件退化前后的 log(I_FT/E)与√E 都遵循良好的线性关系, 表明漏电流均由电子Frenkel-Poole (FP) 发射主导. 退化后 log(I_FT/E)与√E 曲线斜率的减小, 以及利用EMMI在栅边缘直接观察到了与缺陷存在对应关系的“热点”, 证明了漏电流退化的机理是: 高电场在AlGaN层中诱发了新的缺陷, 而缺陷密度的增加导致了FP发射电流I_FT的增加. 关键词： AlGaN/GaN 高电子迁移率晶体管 漏电流 退化机理     

基于原位等离子体氮化及低压化学气相沉积-Si_3N_4栅介质的高性能AlGaN/GaN MIS-HEMTs器件的研究

通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si_3N_4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si_3N_4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围V_(G-sweep)=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压V_(G+)(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100μs).     

快凝过程中液态Cu64Zr36合金二十面体团簇遗传与演化跟踪

采用分子动力学方法模拟研究了液态Cu₆₄Zr₃₆合金在冷速50 K/ns下 的快速凝固过程, 并通过双体分布函数、Honeycutt-Andersen (H-A) 键型指数和团簇类型指数对其微结构演变特性进行了分析. 液态与快凝玻璃合金的主要原子组态都是二十面体(12 0 12 0)及其变形结构 (12 8/1551 2/1541 2/1431), 其中比例最高的是Cu芯Cu₈Zr₅基本原子团, 其次是Cu₇Zr₆和Cu₉Zr₄团簇; 并且由这些二十面体基本原子团铰链形成的中程序, 其尺寸分布在液相和固相中分别呈现出13, 19, 25,···和13, 19, 23, 25, 29, 37,···的幻数特征. 团簇的演化与跟踪分析发现: 没有任何团簇能从液态直接遗传到固态合金, 遗传的起始温度出现在T_m–T_g过冷液相区. 二十面体团簇的遗传主要以完全和直接遗传为主, 并且一个明显的增加发生在T_g附近. 在玻璃化转变温度T_g以下, (12 0 12 0) 二十面体比 (12 8/1551 2/1541 2/1431) 变形二十面体具有更高的结构遗传能力, 但仅有少部分在遗传过程中能保持化学成分的恒定. 通过部分遗传, 某些二十面体中程序甚至也能从过冷液体中被遗传到玻璃合金. 关键词： 快速凝固 分子动力学 二十面体团簇 遗传     

单根In掺杂ZnO纳米带场效应管的电学性质

采用化学气相沉积法合成了In掺杂ZnO纳米带,并对其进行了X射线衍射、光致发光及透射电镜表征.基于单根纳米带,采用廉价微栅模板法制备了背栅场效应管,利用半导体参数测试仪测量了场效应管的输出(Ids-Vds)和转移(Ids-Vgs)特性,得出相关电学参数,其中迁移率值为622 cm2·V-1·s-1,该值明显优于包括ZnO在内的大多数材料;讨论了迁移率提高的可能原因.     

Atomic-layer-deposited Al_2O_3 and HfO_2 on InAlAs: A comparative study of interfacial and electrical characteristics

Al_2O_3 and HfO_2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XPS).It is demonstrated that the Al_2O_3 layer can reduce interfacial oxidation and trap charge formation.The gate leakage current densities are 1.37×10~6 A/cm~2 and 3.22×10~6 A/cm~2 at+1V for the Al_2O_3/InAlAs and HfO_2/InAlAs MOS capacitors respectively.Compared with the HfO_2/InAlAs metal-oxide-semiconductor(MOS) capacitor,the Al_2O_3/InAlAS MOS capacitor exhibits good electrical properties in reducing gate leakage current,narrowing down the hysteresis loop,shrinking stretch-out of the C-V characteristics,and significantly reducing the oxide trapped charge(Q_(ot)) value and the interface state density(D_(it)).     

Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells

Electroluminescence (EL) spectra of blue InGaN/GaN multiple-quantum-well light-emitting diode (LED) have been investigated over a wide range of injection current (0.001–200 mA) and at various temperatures (6–300 K). Surprisingly, with increasing the injection current the EL peak energy shows an initial blueshift accompanied by a broadening of the EL linewidth at low temperatures (below 30 K). This trend differs from the usual photoluminescence (PL) measurement results, which have shown that with increasing the optical excitation power the PL peak energy gave an initial blueshift accompanied by a narrowing of the PL linewidth at low temperatures. The anomalous current behavior of the EL spectra may be attributed to electron leakage results in the failure of Coulomb screening effect and the relative enhancement of the low-energetic localized state filling at low temperatures and low currents. The electron leakage for the LED is further confirmed by both the current dependence of the EL intensity and the temperature dependence of the EL efficiency.     

Influence of alkali metal superoxides on structure,electronic,and optical properties of Be_(12)O_(12) nanocage:Density functional theory study

The effect of alkali metal superoxides M_3O(M = Li,Na,K) on the electronic and optical properties of a Be_(12)O_(12) nanocage was studied by density functional theory(DFT) and time-dependent density functional theory(TD-DFT).The energy gaps(Eg) of all configurations were calculated.Generally,the adsorption of alkali metal superoxides on the Be_(12)O_(12) nanocage causes a decrease of Eg.Electric dipole moment μ,polarizability α,and static first hyperpolarizability β were calculated and it was shown that the adsorption of alkali metal superoxides on Be_(12)O_(12) increases its polarizability.It was found that the absorption of M_3 O on Be_(12)O_(12) nanocluster improves its nonlinear optical properties.The highest first hyperpolarizability(β≈ 214000 a.u.) is obtained in the K_3O–Be_(12)O_(12)nanocluster.The TD-DFT calculations were performed to investigate the origin of the first hyperpolarizabilities and it was shown that a higher first hyperpolarizability belongs to the structure that has a lower transition energy.     

Effects of crystallographic ordering on the magnetic behaviour of (AgIn)1-zMn2zTe2 and (CuIn)1-zMn2zTe2 alloys

Measurements of magnetic susceptibility in the temperature range 4.2–300 K were made on polycrystalline samples of the (AgIn)_{1 - z}Mn_2zTe₂ and (CuIn)_{1 - z}Mn_2zTe₂ alloys, and the data used to give values of spin-glass transition te mperature T_g and Curie-Weiss paramagnetic temperature θ. For any sample for which the X-ray powder photograph indicated an apparently single phase condition, either zinc-blende or chalcopyrite, the susceptibility data could show up to three separate T_g values. These different magnetic conditions are attributed to crystallographic ordering of the Mn ions on the chalcopyrite and zinc-blende lattices, the three observed T_g values corresponding to disordered zinc-blende, ordered zinc-blende and ordered chalcopyrite. The value of θ obtained from the 1/χ vs. T plot is shown to be a weighted mean of the separate values of θ for the phases present. The relative sizes of the T_g peaks and the values of θ for any given sample gives an indication of the amount of each phase present. These amounts were varied by using different methods of heat treatment and it was shown that the magnetic behaviour was consistent with the T(z) phase diagram for the two alloy systems.     

Ge20Sb15Se65薄膜的热致光学特性变化研究

采用磁控溅射法制备了Ge₂₀Sb₁₅Se₆₅薄膜, 研究热处理温度(150—400 ℃)对薄膜光学特性的影响. 通过分光光度计、X射线衍射仪、显微拉曼光谱仪对热处理前后薄膜样品 的光学特性和微观结构进行了表征, 并根据Swanepoel方法以及Tauc公式分别计算了薄膜折射率色散曲线和光学带隙等参数. 结果表明当退火温度(T_a)小于薄膜的玻璃转化温度(T_g)时,薄膜的光学带隙(E_g^opt)随着退火温度的增加由1.845 eV上升至1.932 eV, 而折射率由2.61降至2.54; 当退火温度大于薄膜的玻璃转化温度时,薄膜的光学带隙随退火温度的增加由1.932 eV降至1.822 eV, 折射率则由2.54增至2.71. 最后利用Mott和Davis提出的非晶材料由非晶到晶态的结构转变模型对结果进行了解释, 并通过薄膜XRD和Raman光谱进一步验证了结构变化是薄膜热致变化的重要原因. 关键词： 20Sb₁₅Se₆₅薄膜')" href="#">Ge₂₀Sb₁₅Se₆₅薄膜 热处理 光学带隙 折射率     

Small activation entropy bestows high-stability of nanoconfined D-mannitol

It has been a long-standing puzzling problem that some glasses exhibit higher glass transition temperatures(denoting high stability) but lower activation energy for relaxations(denoting low stability). In this paper, the relaxation kinetics of the nanoconfined D-mannitol(DM) glass was studied systematically using a high-precision and high-rate nanocalorimeter.The nanoconfined DM exhibits enhanced thermal stability compared to the free DM. For example, the critical cooling rate for glass formation decreases from 200 K/s to below 1 K/s; the Tg increases by about 20 K–50 K. The relaxation kinetics is analyzed based on the absolute reaction rate theory. It is found that, even though the activation energy E~*decreases,the activation entropy S~*decreases much more for the nanoconfined glass that yields a large activation free energy G~*and higher thermal stability. These results suggest that the activation entropy may provide new insights in understanding the abnormal kinetics of nanoconfined glassy systems.