Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy(SIMS) analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio N_(it)/N_(ot) are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo(kMC) method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.     

基于纠缠态的量子通信网络的量子信道建立速率模型

针对基于纠缠态的量子通信网络, 提出了网络模型. 基于网络模型, 首先分析了基础链路的量子信道建立速率. 然后根据基础链路的量子信道建立速率, 针对不同的量子信道建立方法, 对中继长链路上的量子信道建立速率进行分析, 得到在逐点方法和分段方法下所对应的量子信道建立速率. 最后, 利用逾渗模型, 对大规模纠缠态量子通信网络中任意两点间的量子信道建立速率进行分析, 推导出n个节点量子通信网络中, 量子信道建立速率为Ω (1/n).     

Abnormal breakdown of Stokes–Einstein relation in liquid aluminium

We present the results of systematic molecular dynamics simulations of pure aluminium melt with a well-accepted embedded atom potential. The structure and dynamics were calculated over a wide temperature range, and the calculated results(including the pair correlation function, self-diffusion coefficient, and viscosity) agree well with the available experimental observations. The calculated data were used to examine the Stokes–Einstein relation(SER). The results indicate that the SER begins to break down at a temperature T_x(~1090 K) which is well above the equilibrium melting point(912.5 K).This high-temperature breakdown is confirmed by the evolution of dynamics heterogeneity, which is characterised by the non-Gaussian parameter α_2(t). The maximum value of α 2(t), α_(2,max), increases at an accelerating rate as the temperature falls below Tx. The development of α_(2,max) was found to be related to the liquid structure change evidenced by local fivefold symmetry. Accordingly, we suggest that this high-temperature breakdown of SER has a structural origin. The results of this study are expected to make researchers reconsider the applicability of SER and promote greater understanding of the relationship between dynamics and structure.     

双色场诱导气体产生相干可控的四次谐波

利用钛宝石飞秒激光器输出的基频脉冲ω及其倍频脉冲2ω所构成双色场作用空气, 实验中检测到了中心波长处于真空紫外波段的四阶谐波. 在气体未发生电离的情况下, 四次谐波强度对双色场的能力依赖关系显示其产生是参量过程2ω+ω+ω→4ω的贡献. 当气体发生电离, 四次谐波强度与双色场相对相位有关, 可通过双色场相干控制. 实验研究了四次谐波对双色场相位的依赖性以及与太赫兹波的关联性, 其结果与数值模拟结果相符, 分析发现当气体发生电离时四次谐波的产生过程存在太赫兹辐射Ω_THz的参与, 是参量过程2ω+2ω±Ω_THz→4ω和2ω+ω+ω→4ω的共同贡献.     

在线社交网络中群体互动行为的时间特征

针对在线社交网络中群体互动行为,运用有偏扩散理论,构建有偏扩散模型,从任务的间隔时间τ与执行时间θ的关系视角,系统地阐述了群体互动活动中群体发帖行为与事件行为的时间间隔分布特征.针对群体用户发帖时τ≥θ的特征,论证群体用户发帖时间间隔的幂律分布机理.针对事件时τ>>θ的特征,论证了事件时间间隔具有指数效应的幂律分布机理,实验结果与理论推导吻合.     

电压应力下超薄栅氧化层n-MOSFET的击穿特性

研究了90nm工艺下栅氧化层厚度为1.4nm的n-MOSFET的击穿特性，包括V-ramp(斜坡电压)应力下器件栅电流模型和CVS(恒定电压应力)下的TDDB(经时击穿)特性，分析了电压应力下器件的失效和退化机理.发现器件的栅电流不是由单一的隧穿引起，同时还有电子的翻越和渗透.在电压应力下，SiO₂中形成的缺陷不仅降低了SiO₂的势垒高度，而且等效减小了SiO₂的厚度(势垒宽度).另外，每一个缺陷都会形成一个导电通道，这些导电通道的形成增大了栅电流，导致器件性能的退化，同时栅击穿时间变长. 关键词： 超薄栅氧化层 斜坡电压 经时击穿 渗透     

初始压入位置对Ni基单晶合金纳米压痕影响研究

针对Ni基单晶合金建立初始压入γ 相的γ /γ' 模型和初始压入γ'相的γ'/γ 模型, 采用分子动力学方法模拟金刚石压头压入两种模型的纳米压痕过程, 计算两种模型[001]晶向硬度. 采用中心对称参数分析两种模型(001)相界面错配位错对纳米压痕过程的影响. 结果显示: 弛豫后, 两种模型(001)相界面错配位错形式不同, 其中γ'/γ 模型(001)相界面错配位错以面角位错形式存在; 压入深度在0.930 nm 之前, 两种模型(001)相界面错配位错变化不大, 压入载荷-压入深度及硬度-压入深度曲线较符合; 压入深度在0.930 nm之后, γ'/γ 模型(001)相界面错配位错长大很多, 导致相同压入深度时γ'/γ 模型比γ /γ'模型压入载荷和硬度计算结果小; 压入深度在2.055 nm之后, γ /γ'模型(001)相界面错配位错对γ 相中位错进入γ'相有阻碍作用, 但仍有部分位错越过(001) 相界面进入γ' 相中, γ'/γ 模型(001)相界面处面角位错对γ' 相中位错进入γ 相有更明显的阻碍作用, 几乎无位错越过(001) 相界面进入γ 相中, 面角位错的强化作用更明显, 所以γ'/γ 模型比γ /γ'模型压入载荷上升速度快.     

Simulations of migration, fragmentation and coalescence of non-wetting fluids in porous media

A model based on invasion percolation was used to simulate the migration on a non-wetting fluid through a porous medium filled with an immiscible wetting fluid under the influence of a gradient such as that provided by gravity. The migrating fluid clusters undergo both fragmentation and coalescence. The fragment size distribution obtained from two-dimensional simulations in which the gradient g is slowly increased from 0 can be represented by the scaling form N_s(g)s^-2ƒ(s|g|^-z where z=1+(D−1)ν(ν+1). Here D is the fractal dimensionality of invasion percolation, with trapping, and ν is the ordinary percolation correlation length exponent.     

Three-party reference frame independent quantum key distribution protocol

We present a three-party reference frame independent quantum key distribution protocol which can be implemented without any alignment of reference frames between the sender and the receiver. The protocol exploits entangled states to establish a secret key among three communicating parties. We derive the asymptotic key rate for the proposed protocol against collective attacks and perform a finite-size key security analysis against general attacks in the presence of statistical fluctuations. We investigate the impact of reference frame misalignment on the stability of our protocol, and we obtain a transmission distance of 180 km, 200 km, and 230 km for rotation of reference frames β=π/6, β=π/8 and β=0, respectively. Remarkably, our results demonstrate that our proposed protocol is not heavily affected by an increase in misalignment of reference frames as the achievable transmission distances are still comparable to the case where there is no misalignment in reference frames (when β=0). We also simulate the performance of our protocol for a fixed number of signals. Our results demonstrate that the protocol can achieve an effective key generation rate over a transmission distance of about 120 km with realistic 10⁷ finite data signals and approximately achieve 195 km with 10⁹ signals. Moreover, our proposed protocol is robust against noise in the quantum channel and achieves a threshold error rate of 22.7%.     

色散介质电磁特性时域有限差分分析的Newmark方法

根据Debye模型、Drude模型和Lorentz模型3种常见色散介质模型频域极化率的特点,利用频域到时域的转换关系jω→?/?t,将极化矢量P与电场强度E的频域关系转换成时域内关于P的二阶微分方程,其对3种色散介质模型皆适用,具有统一的形式.然后采用相比于中心差分具有更高精度的Newmark两步算法(Newmark-β-γ法)求解该方程,进而得到E→P的递推公式,再结合本构关系得到D→E的时域递推式.实现了色散介质电磁场量的时域有限差分迭代计算.数值计算结果表明该方法是适用于3种色散介质模型的通用算法,并且相比于移位算子时域有限差分方法等以中心差分为基础的离散方案具有更高的计算精度.     

用于α和μ常数变化测量的碘离子光谱研究

分子离子I_2~+的禁戒跃迁光谱有可能用于测量α和μ常数的变化,并且具有增强的灵敏度.通过分析I_2~+在11860—13100 cm~(-1)范围内的转动光谱,拟合了A~2Π_(3/2)-X~2Π_(3/2)系统31个振转带的5759根吸收谱线,得到5个属于X~2Π_(3/2)态和9个属于A~2Π_(3/2)态的振动能级准确的转动光谱常数.在量子噪声极限和1 Hz跃迁线宽的条件下,计算得到X~2Π_(3/2)和X~2Π_(1/2)之间的禁戒跃迁对α和μ常数变化测量的灵敏度为δ_(α/α)≈2.37×10~(-19)a~(-1)和δ_(μ/μ)≈1.18×10~(-18)a~(-1).     

中性粒子在Ioffe阱中的经典运动方程的Floquet解

研究中性粒子在Ioffe阱中近原点区域的囚禁时,阱中的磁场可以呈现出一种简明的形式.磁矩μ反平行于磁场的中性粒子在阱中与磁场发生相互作用,借助相互作用势,可以获得粒子在阱中的经典运动方程.在一定的条件下,采用迭代近似的目的,将方程演化为马丢方程的形式,利用传统的WKBJ目的可实现方程的近似求解.研究阱中中性粒子的囚禁问题时,感兴趣的是马丢方程的Floquet解,即周期为π,2π的全周期和半周期解,欲获得这种周期解,马丢方程中的参数λ和q必须满足一定的关系,为此必须选择阱的特定参数和粒子的特定初始条件,对这一问题进行了探索性的研究.     

Quantum percolation tunneling current 1/f~γ noise model for high-κ gate stacks Bi-layer breakdown

Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model.We conclude that the noise amplitude of the PSD(Power Spectral Density)for three stages,namely the fresh device,one-layer BD(breakdown),and two-layer BD,increases from 10-22→10-14→10-8 A2/Hz.Meanwhile,the noise exponent γ for the three stages,has the 1/f2type(γ→2),1/fγ type(γ→1~2),and 1/f type(γ→1),respectively.The simulation results are in good agreement with the experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.     

有限深两层流体中内孤立波造波实验及其理论模型

将置于大尺度密度分层水槽上下层流体中的两块垂直板反方向平推, 以基于 Miyata-Choi-Camassa (MCC)理论解的内孤立波诱导上下层流体中的层平均水平速度作为其运动速度, 发展了一种振幅可控的双推板内孤立波实验室造波方法. 在此基础上, 针对有限深两层流体中定态内孤立波 Korteweg-de Vries (KdV), 扩展KdV (eKdV), MCC和修改的Kdv (mKdV)理论的适用性条件等问题, 开展了系列实验研究.结果表明, 对以水深为基准定义的非线性参数ε 和色散参数μ, 存在一个临界色散参数μ₀, 当μ < μ₀ 时, KdV理论适用于ε ≤μ 的情况, eKdV理论适用于μ < ε ≤√μ 的情况, 而MCC理论适用于ε > √μ 的情况, 而且当μ ≥μ₀ 时MCC理论也是适用的.结果进一步表明, 当上下层流体深度比并不接近其临界值时, mKdV理论主要适用于内孤立波振幅接近其理论极限振幅的情况, 但这时MCC理论同样适用.本项研究定量地表征了四类内孤立波理论的适用性条件, 为采用何种理论来表征实际海洋中的内孤立波特征提供了理论依据. 关键词： 两层流体 内孤立波 双板造波 临界色散参数     

频率对半导体器件热击穿影响的理论模型

针对半导体器件中的热击穿,通过分析已有的理论模型,把频率对器件热区热产生和热传导的影响引入理论模型.利用格林函数求解热传输方程,同时对余误差函数进行近似处理,求解得到热区温度以及器件烧毁功率与频率和脉冲宽度的表达式.通过数值分析,求解得到不同频率下器件烧毁功率随脉冲宽度的变化规律以及不同脉冲宽度下器件烧毁功率随频率的变化规律,同时给出了频率对器件烧毁功率影响的物理解释.     

Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

In this work, the influence of Si/SiO₂ interface properties, interface nitridation and remote-plasma-assisted oxidation (RPAO) thickness (<1 nm), on electrical performance and TDDB characteristics of sub-2 nm stacked oxide/nitride gate dielectrics has been investigated using a constant voltage stress (CVS). It is demonstrated that interfacial plasma nitridation improves the breakdown and electrical characteristics. In the case of PMOSFETs stressed in accumulation, interface nitridation suppresses the hole traps at the Si/SiO₂ interface evidenced by less negative V_t shifts. Interface nitridation also retards hole tunneling between the gate and drain, resulting in reduced off-state drain leakage. In addition, the RPAO thickness of stacked gate dielectrics shows a profound effect in device performance and TDDB reliability. Also, it is demonstrated that TDDB characteristics are improved for both PMOS and NMOS devices with the 0.6 nm-RPAO layer using Weibull analysis. The maximum operating voltage is projected to be improved by 0.3 V difference for a 10-year lifetime. However, physical breakdown mechanism and effective defect radius during stress appear to be independent of RPAO thickness from the observation of the Weibull slopes. A correlation between trap generation and dielectric thickness changes based on the C-V distortion and oxide thinning model is presented to clarify the trapping behavior in the RPAO and bulk nitride layer during CVS stress.     

Control of spins in a nano-sized magnet using electric-current

With the development of spintronics,spin-transfer torque control of magnetic properties receives considerable attention.In this paper the Landau-Lifshitz-Gilbert equation including the torque term is used to investigate the magnetic moment dynamics in the free layer of the ferromagnet/non-magnetic/ferromagnet(FM1/N/FM2) structures.It is found that the reverse critical time τ_c decreases with the current increasing.The critical time τ_c as a function of current for the perpendicular and parallel easy magnetic axes are the same.The critical time τ_c increases with the damping factor α increasing.In the case of large current the influence of the damping factor α is smaller,but in the case of little torque the critical time τ_c increases greatly with the damping increasing.The direction of the magnetization in the fixed layer influences the critical time,when the angle between the magnetization and the z direction changes from 0.1π to 0.4π,the critical time τ_c decreases from 26.7 to 15.6.     

Driven injection of a polymer into a spherical cavity: A Langevin dynamics simulation study

The injection of a self-avoiding flexible polymer into a spherical cavity under a driving force is studied by using Langevin dynamics simulation. For given polymer length (N) and driving force (f), the polymer can be completely injected into the cavity only when the radius of the cavity is larger than a transition radius (R_eC). The dependence of R_eC on N and f can be described by a scaling relation R_eC∝N^1/3f^-δ. The value of δ changes from 4/15 in the small f region to 1/6 in the moderate f region due to the screening of the excluded-volume interaction between monomers. We find the complete injection time (τ) decreases monotonously with increasing the cavity radius or decreasing the polymer length. The simulation results are in good agreement with the theoretical predictions from the free energy analysis and a simple kinetic model.     

Laser phase effect on asymmetric harmonic distribution in H_2~+

The laser phase effect on the spatial distribution of the molecular high-order harmonic generation(MHHG) spectrum from H_2~+ is theoretically investigated through solving the Non-Bohn-Oppenheimer(NBO) time-dependent Schrodinger equation(TDSE).The results are shown as follows,(i) The generated harmonics from the two nuclei each present an asymmetric distribution.Particularly,when the laser phases are chosen from 0.0π to 0.6π and from 1.7π to 2.0π,the contribution from the negative-H plays a main role in harmonic generation.When the laser phases are chosen from 0.7πto 1.6k,the contribution from the positive-H to the harmonic generation is remarkably enhanced and becomes greater than that from the negative-H.The electron localization,the time-frequency analyses of the harmonic spectrum and the time-dependent wave function are shown to explain the asymmetric harmonic distribution in H_2~+,which provides us with a method to control the electron motion in molecules,(ⅱ) As the pulse duration increases,the asymmetric distributions of the MHHG in two H nuclei decrease,(ⅲ) Isotope investigation shows that the asymmetric harmonic distribution can be reduced by introducing the heavy nucleus(i.e.,D_2~+).     

Numerical analyses on optical limiting performances of chloroindium phthalocyanines with different substituent positions

Optical limiting properties of two soluble chloroindium phthalocyanines with α- and β-alkoxyl substituents in nanosecond laser field have been studied by solving numerically the coupled singlet–triplet rate equation together with the paraxial wave field equation under the Crank–Nicholson scheme. Both transverse and longitudinal effects of the laser field on photophysical properties of the compounds are considered. Effective transfer time between the ground state and the lowest triplet state is defined in reformulated rate equations to characterize dynamics of singlet–triplet state population transfer. It is found that both phthalocyanines exhibit good nonlinear optical absorption abilities, while the compound withα-substituent shows enhanced optical limiting performance. Our ab-initio calculations reveal that the phthalocyanine withα-substituent has more obvious electron delocalization and lower frontier orbital transfer energies, which are responsible for its preferable photophysical properties.