High power continuous-wave diode-laser-pumped Nd:YAG laser

We report on a diode-laser-pumped cw Nd: YAG laser operating at a power level of 150 W. By using a transverse pump geometry, the radiation of 54 diode lasers with an output power of 10 W each is coupled into a Nd:YAG rod. In multimode operation, an optical slope efficiency of 32% and an optical to optical efficiency of 29% are obtained. In TEM₀₀ operation, an output power of more than 30 W is realized with an optical to optical efficiency of 10%.     

Q-switched and continuous-wave mode-locking of a diode-pumped Nd:Gd0.64Y0.36VO4−Cr4+:YAG laser

We report on a diode-pumped passively mode-locked Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. Q-switched mode locking (QML) with 90% modulation depth was obtained. The peak power of the mode-locked pulse near the maximum of the Q-switched envelope was estimated to be about 1.7 MW at the pump power of 12 W. Besides QML, continuous-wave mode locking was also experimentally realized, for the first time to our knowledge, in the laser under a strong intracavity pulse energy fluence. The mode-locked pulse width is about 2.96 ps at a repetition rate of 161.3 MHz.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with Cr4+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, for the first time, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The pulse duration is obviously compressed in contrast to the actively acoustic-optic Q-switched laser. By considering the Gaussian transversal distribution of the intracavity photon density and the longitudinal distribution of the photon density along the cavity axis as well as the influence of turnoff time of the acoustic-optic (AO) Q-switch, we provide the coupled rate equations for a diode-pumped doubly Q-switched Nd:GdVO₄ laser with both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber. These coupled rate equations are solved numerically, and the dependence of pulse width, pulse energy and peak power on the incident pump power at different pulse repetition rates is obtained. The numerical solutions of equations agree well with the experimental results.This revised version was published online in August 2005 with a corrected cover date.     

Efficient, kHz repetition rate, gain-switched Cr:forsterite laser

We have developed a gain-switched room-temperature Cr:forsterite laser operating at repetition rates of between 1 and 34 kHz, and pumped by a continuous wave, Q-switched Nd:YAG laser. With optimised output coupling, an output pulse energy of 52 μJ was measured at 1.5 kHz repetition rate, corresponding to 11% efficiency and 13% slope efficiency. Threshold pulse energy was 53 μJ. Output power of 370 mW was obtained at 10 kHz repetition rate and 4.4 W pump power. Water cooling was not required for repetition rates up to 10 kHz. In a tunable, folded resonator, the Cr:forsterite wavelength tuned between 1173 and 1338 nm. This laser operated with maximum pulse energy of 34 μJ, efficiency of 13%, and power of 307 mW. The laser output was close to diffraction-limited with M² of 1.2. Received: 6 January 1999 / Published online: 29 July 1999     

Pulse shortening to 25 ps in a cw mode-locked Nd: YAG laser by introducing an intracavity etalon

The gain spectrumG(v) of a cw mode-locked Nd:YAG laser is flattened by a properly designed intracavity etalon. The increase in amplification bandwidth allows the generation of very stable trains of pulses shorter than that of standard systems. A reduction of the pulse width from 70 to 25 ps is observed by incorporating a BK 7 platelet of 420 m thickness in the resonator. The properties of the laser are investigated as a function of the thickness and the orientation angle of the etalon. The laser performance is found to be considerably influenced by the fact that the Nd³⁺ laser transition at 1.064 m consists of a line doublet.     

Self-Q-switched and mode-locked Nd,Cr:YAG laser with 6.52-W average output power

Simultaneous self-Q-switched and mode-locked have been demonstrated in a diode-pumped Nd,Cr:YAG laser. For the first time as we know, almost 100% modulation depth has been achieved at an intracavity intensity of 5.6 × 10⁵ W/cm². The maximum average output power of 6.52 W corresponding to a slope efficiency of 30% is obtained at 1064 nm. The laser produces high-quality pulses in a TEM₀₀-mode at the pump power of 16.5 W. The pulse duration of the mode-locked pulses is about 600 ps with 136 MHz repetition rate.     

Investigation on amplitude and frequency noise of injection-locked diode-pumped Nd:YAG lasers

Amplitude and frequency stability of an injection-locked diode-pumped miniature Nd:YAG ring laser were measured. The mechanism of amplitude-noise transfer to the injection-locked slave laser was experimentally investigated and consequences for the injection locking of solid-state lasers operating at high output powers are discussed.     

Highly efficient synchronous amplification of a picosecond dye laser at a kHz repetition rate

A short pulse, high energy, high repetition rate dye amplifier with superior conversion efficiency is reported. The dye amplifier is composed of three single-pass dye cells, longitudinally pumped by a frequency doubled 1 kHz Nd: YLF regenerative amplifier. The dye amplifier yields 3.5 ps, 150 J pulses at 595 nm, corresponding to a 12% conversion efficiency. The ASE is 1% or less, and the transverse mode quality is near-Gaussian.In absentia from the Department of Chemistry, Princeton University, Princeton, NJ 08544, USA     

Continuous-wave high-power multi-pass pumped thin-disc Nd:GdVO4 laser

A thin-disc Nd:GdVO₄ laser in multi-pass pumping scheme was developed. Continuous-wave output power of 13.9 W at 1.06 μm for an absorbed power at 808 nm of 22 W was demonstrated from a 250-μm thick, 0.5-at.% Nd:GdVO₄ in a 4-pass pumping; the slope efficiency in absorbed power was 0.65, or 0.47 in input power. Output performances were also investigated under diode laser pumping at 879 nm, directly into the emitting ⁴F_3/2 level: maximum power of 3.6 W was obtained at 6.2 W of absorbed power with 0.69 slope efficiency. Compared with pumping at 808 nm, into the highly absorbing ⁴F_5/2 level, improvements of laser parameter in absorbed power (increase of slope efficiency, decrease of threshold) were obtained, showing the advantages of the pumping into the emitting level. However, the laser performances expressed vs. the incident power were modest owing to the low absorption efficiency at 879 nm. Thus, increased number of passes of the medium would be necessary in order to match the performances in input power obtained under 808-nm pumping.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

A 180 mW Nd:LaSc3(BO3)4 single-frequency TEM00 microchip laser pumped by an injection-locked diode-laser array

A TEM₀₀ single-frequency, diode-pumped microchip laser of Nd(25%):LaSc₃(BO₃)₄ is operated with an output power of 180 mW. For best performance the laser was pumped by the 450 mW diffraction-limited single-frequency radiation of an injection-locked AlGaAs diode-laser array and cooled to the temperature of liquid nitrogen. The active and passive losses of the microchip laser were investigated by measuring the relaxation oscillation frequency and by comparing the experimental results with values obtained from appropriate rate equations. The power-dependent far-field pattern is in good agreement with the intensity distribution calculated by assuming a thermally induced waveguide cavity.     

High efficiency TEM00 mode, diode-pumped, conduction-cooled, Nd:YAG zig-zag slab laser

We report a compact, conduction-cooled, highly efficient, continuous wave (CW) Nd:YAG slab laser in diode-side-pumped geometry. To achieve high efficiency, a novel laser head for Nd:YAG slab has been developed. For an absorbed pump power of 27.6 W, maximum output power of 10.4 W in multimode and 8.2 W in near-diffraction-limited beam quality has been obtained. Slope and optical-to-optical conversion efficiencies are 45.3% and 37.7% in multimode with beam quality factors (M²) in x and y directions equal to 32 and 8, respectively. TEM₀₀ mode operation was achieved in a hybrid resonator with slope and optical-to-optical conversion efficiencies of 43.2% and 29.7%, respectively. Beam quality factors in x and y directions are ?1.5 and ?1.6 for the whole output power range. The laser radiation was linearly polarized and polarization contrast ratios are >1200:1 in the multimode and 1800:1 in the TEM₀₀ mode operation. In passive Q-switching with Cr⁴⁺:YAG crystal of 68% initial transmission, 18 ns pulsewidth has been achieved with an average power of 2 W at a repetition rate of 16 kHz.     

CW diode pumping and FM mode locking of a Nd: KGW laser

We have demonstrated cw diode end pumping of Nd: KGW, a novel solid-state gain medium, with up to 30% conversion efficiency into near-TEM₀₀ (M² < 1.05) output at = 1.067 µm for a pump level of 2.7 W. The slope efficiency was limited by intracavity reflections to 36%; however, direct comparison to a similar Nd:YAG laser indicates the same intrinsic slope efficiency of 60%. FM mode locking of this laser at 200 MHz has produced 12 ps pulses (compared to 16 ps for Nd: YAG), although an intracavity etalon was required. Considerable reduction in pulse width is possible (the line width limit is 0.5 ps) but different techniques may be necessary. Spatial hole burning was evident in both the 120 GHz free-running spectrum and the etalon-limited mode-locked spectrum.     

Specialty Yb fiber amplifier for microchip Nd laser: Towards ∼1-mJ/1-ns output at kHz-range repetition rate

We demonstrate and optimize, for a mJ/ns release at the wavelength 1.064 μm, the operation of a compact laser system designed in the form of a hybrid, active-passive, Q-switched Nd³⁺:YAG/Cr⁴⁺:YAG microchip laser seeding an Yb-doped specialty multi-port fiber amplifier. As the result of the amplifier optimization, ∼1 mJ, ∼1 ns, almost single-mode pulses at a 1-10-kHz repetition rate are achieved, given by a gain factor of ∼19 dB for an 11-μJ input from the microchip laser. Meanwhile, a lower pulse energy, ∼120 μJ, but a much higher gain (∼25 dB) are eligible for the less powerful (0.35 μJ) input pulses.     

Passive mode locking of a diode-pumped Nd:Gd 0.64 Y 0.36 VO 4 laser with a GaAs saturable absorber mirror

We report a diode-pumped Nd:Gd_0.64Y_0.36VO₄ laser passively mode locked by using a GaAs saturable absorber mirror. Both the Q-switched and continuous-wave (CW) mode locking were experimentally realized. The CW mode-locked pulses have a pulse width of about 8.8 ps at a repetition rate of 161.3 MHz. Limited by the available pump power, a maximum output power of 2.47 W was obtained for the CW mode-locked pulses with a slope efficiency of about 26.6%.     

13-W picosecond Nd:GdVO4 regenerative amplifier with 200-kHz repetition rate

We report a diode-pumped picosecond Nd:GdVO₄ regenerative amplifier system designed for micro-machining applications. Nd:GdVO₄ was chosen as gain material because it offers – in comparison to the commonly used Nd:YVO₄ – improved thermal properties and a larger gain bandwidth. At the maximum repetition rate of 200 kHz, the system generated 6.8-ps-long pulses with a pulse energy of 65 μJ, which corresponds to an average output power of 13 W. At 100 kHz, the pulse energy increased to 123 μJ, whereas the average power of 12.3 W remained almost identical. The broadening of the pulses due to gain narrowing was investigated in dependence on the number of cavity round trips and on the repetition rate. At 200 kHz, the injected 5.3-ps-long pulses broadened slightly to about 6.8 ps.     

V:YAG – a new passive Q-switch for diode-pumped solid-state lasers

gsa =3.0×10^-18 cm² and σ_esa=1.4×10^-19 cm² at 1064 nm, and σ_gsa=7.2×10^-18 cm² and σ_esa=7.4×10^-19 cm² at 1342 nm. Q-switched operation was demonstrated at 1064 nm and 1342 nm from a Nd:YVO₄ microchip laser, producing pulses as short as 9.3 ns at 1342 nm with peak powers of 350 W. Received: 17 March 1998/Revised version: 8 June 1998     

High-power simultaneous dual-wavelength emission of an end-pumped Nd:YAG laser using the quasi-three-level and the four-level transition

An efficient continuous-wave (CW) simultaneous dual-wavelength lasing (SDWL) of an LD end-pumped Nd:YAG laser utilizing a quasi-three-level transition at 946 nm and a four-level transition at 1064 nm is reported. A theoretical model has been introduced to determine the threshold conditions for SDWL. The temperature distributions of a Nd:YAG crystal under different pump powers have been analyzed. In the experiments, a CW SDWL output power of 5.12 W at a temperature of 273 K has been achieved with a pump power of 17 W, giving a slope efficiency of 16.36%.     

Intracavity frequency doubling of an active Q-switched Nd:YAG laser with 2.25 W output power at 473 nm

An active Q-switched diode-end-pumped Nd:YAG laser is reported with 2.9 W output power on the ⁴F_3/2 → ⁴I_9/2 transitions at a pump power of 24 W. With intracavity frequency doubling using a 20-mm-long LBO, a maximum blue output power of 2.25 W is achieved at a repetition rate of 23 kHz. The conversion efficiency from the corresponding Q-switched fundamental output to blue output is 96%. The peak power of the Q-switched blue pulse is up to 610 W with 160 ns pulse width. The fluctuation of the blue output power is less than 4.0% at the maximum output power.     

Green-Beam Generation of 40W by Use of an Intracavity Frequency-Doubled Diode Side-Pumped Nd:YAG Laser

A cw diode side-pumped Nd：YAO laser is frequency doubled to 532nm with an intracavity KTP crystal in a Vshaped arrangement, achieving an output power of 40 W corresponding to an optical-optical conversion efficiency of 9.7%. The instabilities and the M2-parameters of the laser are measured at different output powers after the beam is filtered.