High-power broad-area diode lasers for laser cooling

Received: 1 April 1996/Revised version: 24 September 1996     

透镜对1W白光LED参数的影响

研究了透镜对1W白光LED光强空间分布、光通量和色温光参数的影响。研究结果表明,透镜是1W白光LED光强空间分布的决定因素,透镜的存在和选择性吸收导致1W白光LED发光效率和色温值下降。根据研究结果提出了一种不使用透镜的硅胶倒模封装形式,该封装形式的1W白光LED发光效率比有透镜时提高了6%~7%,且可以使用波峰焊和回流焊方式进行焊接。     

高功率、高效率808nm半导体激光器阵列

通过设计高效率808 nm非对称宽波导外延结构,减少P型波导层和包层的自由载流子光吸收,实现腔内光吸收损耗为0.63 cm~(-1).制备的808 nm半导体激光器阵列在室温25?C下,实现驱动电流135 A,工作电压1.76 V,连续输出功率大于150 W,斜率效率高达1.25 W/A,中心波长809.3 nm,器件最高电光转换效率为65.5%,这是目前国内报道的808 nm半导体激光器阵列的最高电光转换效率,达到国际同类器件最好水平.     

Analysis on the high luminous flux white light from GaN-based laser diode

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I’Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.     

High-power edge emitting red laser diode optimisation using optical simulation

Optical and Quantum Electronics - The laser diode structures reported up to now in literature for the red wavelength range are still far from optimal – mostly because many of the desired...     

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I’Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.     

Diode laser based light sources for biomedical applications

Diode lasers are by far the most efficient lasers currently available. With the ever‐continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode lasers simultaneously offer tunability, high‐power emission and compact size at fairly low cost. Therefore, diode lasers are increasingly preferred in important applications, such as photocoagulation, optical coherence tomography, diffuse optical imaging, fluorescence lifetime imaging, and terahertz imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications. 670 nm external cavity diode laser for Raman spectroscopy built on a 13 × 4 mm² microbench (Copyright FBH/Schurian.com ).     

High efficient plastic substrate polymer white light emitting diode

White polymer light emitting diode (PLED) has attracted the interest of researchers by the advantage of having low cost, flexible light sources. One of the major advantages of PLED is that it can be able to fabricate in flexible plastic substrate instead of glass substrate. Generally PLED??s requires a substrate of high refractive index to enhance the amount of trapped light in the device, but the refractive index of flexible plastic substrate is low (n?<?1.6). In this paper, we present a white PLED on a flexible plastic substrate with a new enhancement method. In which the semi-transparent gold layer is sandwiched between the layers of tantalum oxide and molybdenum oxide which does not require a high refractive index substrate. Using this design, the extraction efficiency of the device is increased from 1.5 to 2.1 cw compared to that of the device using glass substrate.     

High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP

This paper reports on a mode-locked InGaAs master oscillator power amplifier (MOPA) system that generates at 920 nm 14-ps-long pulses with a repetition rate of 4.3 GHz and an average power of 2.7 W. Single-pass frequency doubling in a periodically poled KTP crystal provides 550 mW of blue 460-nm radiation. The power of the blue output, which corresponds to a conversion efficiency of more than 20%, was optimized by a detailed investigation of the influence of various system parameters like injection current and repetition rate on pulse power, pulse duration, and spectral shape of the infrared laser pulses. PACS 42.65.Ky; 42.55.Px; 42.72.Bj     

Monte-Carlo simulation of laser diode sub-Poissonian light generation

When laser diodes are driven by high-impedance electrical sources, the variance of the number of photo-detection events counted over large time durations is less than the average number of events (sub-Poissonian light). This paper presents a Monte-Carlo simulation that keeps track of each level occupancy (0 or 1) in the conduction and valence bands, and of the number of light quanta in the optical cavity. When there is good electron–lattice thermal contact, the electron and hole temperatures remain equal to that of the lattice. In that case, the elementary laser-diode noise theory results are accurately reproduced by the simulation. But when the thermal contact is poor (or, almost equivalently, at high power levels), new effects occur (spectral-hole burning, temperature fluctuations, statistical fluctuations of the optical gain) that are difficult to handle theoretically. Our numerical simulation shows that the frequency domain over which the photo-current spectral density is below the shot-noise level becomes narrower as the optical power increases.     

基于光压原理的大功率激光功率测量北大核心CSCD

大功率激光功率测量常用量热法,但溯源复杂。介绍了具有较高测量精度的基于光压原理的大功率激光功率测量方法,设计了利用1/10^(5)精度天平大功率激光测量实验,测试了基于GaAs半导体材料制作的反射镜的反射率及损伤阈值,确定了基于GaAs半导体材料反射镜的相关性能。得到了普通实验室条件下的功率测量重复性及线性,验证了1/10^(5)精度天平用于大功率激光测量的可行性。通过实验结果结合理论计算,得出利用1/10^(5)精度天平的光压测量功率的测量上限可以达到3×10^(4)W以上。     

连续100 W量子阱二极管激光器封装工艺

为了提高激光器输出功率,对研制的铜微通道冷却器性能进行了测试,分析了其散热能力。设计了一种在软焊料中掺杂金属添加剂的工艺,有效抑制了晶须生长,并利用该冷却器和新工艺封装出了连续100 W大功率二极管激光器,并对封装的器件进行了性能测试。测试结果表明,封装的连续100 W器件在工作电流105 A时,输出功率超过了100 W,中心波长为808.5 nm,光谱半高宽为2.15 nm,器件的smile尺寸小于2 μm,部分值小于0.5 μm。     

100W二极管泵浦Nd:YAG薄片激光器

报道了一台高效率二极管泵浦Nd:YAG薄片激光器,采用高效均匀泵浦耦合技术,在峰值功率1.008kW,占空比25％, 电-光效率大于45%的二极管激光阵列泵浦下,用一块1mm厚的Nd:YAG薄片激光介质,获得了峰值功率404W,平均功率101W的准连续激光输出,光-光效率达到40%,电-光效率超过18%。     

High-power narrow-linewidth diode laser pump source based on high-efficiency external cavity feedback technology

In this research, the highly efficient external cavity feedback technology based on volume Bragg grating(VBG) is studied. By using the structure of a fast axis collimating lens, the beam transformation system, a slow axis collimating lens, and VBG,the divergence angle of the fast and slow axes of the diode laser incident on the VBG is reduced effectively, and the feedback efficiency of the external cavity is improved. Combined with beam combining technology, fiber coupling technology,and precisi...     

High-power pulse-periodic Nd3+-YAG laser with combined pumping by diode arrays

Output characteristics of the pulse-periodic solid-state laser pumped by diode arrays at a pump pulse repetition rate of 8...512 Hz were studied. Three pump types are used: longitudinal raster-lightguide, transverse, and combined ones. Diode arrays with a pulse power of ～800 W, emitting area sizes of 5 × 25 mm², and radiation divergence along two mutually perpendicular axes equal to 4° and 15°, respectively, were used as a pump source. The pump current pulse duration was varied within 100–350 µs. Three operating modes were studied: (i) free generation, (ii) passive Q-switch, and (iii) acousto-optic Q-switch ones. The lasing peak pulse power was (i) ～2 kW(free generation mode), (ii) ～1.5 MW (passive Q-switch mode), and (iii) ～100 kW (acousto-optic Q-switch mode). The highest average lasing power was 150 W at a pump pulse repetition rate of 512 Hz. The highest pulsed lasing energy was 0.65 J.     

New double graded structure for enhanced performance in white organic light emitting diode

This study presents a new design that uses a combination of a graded hole transport layer (GH) structure and a gradually doped emissive layer (GE) structure as a double graded (DG) structure to improve the electrical and optical performance of white organic light-emitting diodes (WOLEDs). The proposed structure is ITO/m-MTDATA (15 nm)/NPB (15 nm)/NPB: 25% BAlq (15 nm)/NPB: 50% BAlq (15 nm)/BAlq: 0.5% Rubrene (10 nm)/BAlq: 1% Rubrene (10 nm)/BAlq: 1.5% Rubrene (10 nm)/Alq₃ (20 nm)/LiF (0.5 nm)/Al (200 nm). (m-MTDATA: 4,4′,4″ -tris(3-methylphenylphenylamino)triphenylamine; NPB: N,N′-diphenyl-N,N′-bis(1-naphthyl-phenyl)-(1,1′-biphenyl)-4,4′-diamine; BAlq: aluminum (III) bis(2-methyl-8-quinolinato) 4-phenylphenolate; Rubrene: 5,6,11,12-tetraphenylnaphthacene; Alq₃: tris-(8-hydroxyquinoline) aluminum). By using this structure, the best performance of the WOLED is obtained at a luminous efficiency at 11.8 cd/A and the turn-on voltage of 100 cd/m² at 4.6 V. The DG structure can eliminate the discrete interface, and degrade surplus holes, the electron-hole pairs are efficiently injected and balanced recombination in the emissive layer, thus the spectra are unchanged under various drive currents and quenching effects can be significantly suppressed. Those advantages can enhance efficiency and are immune to drive current density variations.     

Single-tone frequency-modulation spectroscopy with frequency-doubled current-modulated diode laser light

We demonstrate and characterize the generation of single-tone frequency-modulated and frequency-doubled radiation at 400 MHz and 430 nm. We obtained the radiation at 430 nm by frequency doubling light from a current-modulated 860-nm diode laser, using noncritical type I phase matching in a KNbO(3) crystal. The optical spectrum of the doubled light was found to be in keeping with our expectations based on the measured frequency- and amplitude-modulation indices of the fundamental radiation. The experimentally measured diode laser and crystal parameters were used to simulate the in-phase and quadrature signals that would be observed in a single-tone frequency-modulation spectroscopy experiment.     

High-power 83 W holmium-doped silica fiber laser operating with high beam quality

A high-power 83 W cladding-pumped Tm3+-Ho3+-doped silica fiber laser is reported. Using bidirectional 793 nm diode pumping, a maximum slope efficiency of 42% was produced after a threshold launched pump power of 12 W was exceeded. The laser operated at wavelengths near 2105 nm with moderate beam quality, i.e., M2 approximately 1.5. Further power scaling of the fiber laser was limited by thermal failure of the fiber ends.     

Growth of KLN fiber crystals and its application for blue-violet light geration

Potassium lithium niobate (KLN) fiber crystals have been grown by μ-pulling down method. The KLN fibers doubled around 806 nm radiation for type I noncritical phase matching at room temperature. We observed ～0.6 mW output power from single-pass second harmonic generation at an input power of 700 mW.     

The luminescence properties of Er-doped and Er-Tm-co-doped phosphate glasses for white light emitting diode

Phosphate glasses and glass ceramics doped with Er³⁺ and co-doped with Er³⁺-Tm³⁺ are presented in this work. The luminescence properties have been characterized by absorption, excitation and emission spectra. All samples excited by blue light could emit a combination of blue/green/orange/red wavelength giving white light. For Er³⁺-doped glasses, a self-quenching effect has been obtained and an adjustable tune comes out after crystallization. For co-doped glasses, the red emission at 651 nm has been enhanced due to the existence of Tm³⁺, which could be relative to both the overlapped emissions and the energy transfer from Tm³⁺ to Er³⁺.