Nanotribology of Mo–Se–C films

Transition metal dichalcogenides with a layered structure are well known for their self-lubricating properties, particularly in a vacuum or dry atmosphere. The macrotribological properties of these films have been studied extensively. However, the tribological behaviour of these films in the nanonewton load range has hardly been reported. Study of tribological properties with load in the nanonewton range is required for applications related to microelectromechanical systems or nanoelectromechanical systems. In view of the above, the hardness, surface force, friction force, etc. of Mo–Se–C films were investigated at an applied load in the nanonewton range using a nanoindenter and atomic force microscopy. The effect of carbon content, applied load and scanning speed on the friction coefficient was determined. Data pertaining to topography, lateral force and pull-off force of various surfaces are illustrated. The observed nanotribological behaviour of these films is analysed in the light of their nanohardness. The results indicate that the friction force of all the films is very low and in general dependent on surface force. However, a film having the highest carbon content exhibits the maximum friction force. With increasing carbon content of the films tested, the hardness increases and wear decreases. The above results pertain to investigations under ambient conditions.     

Thermal stability and crystallization kinetics of Ge–Se–Cd glasses

The effect is reported of varying cadmium concentration on the glass transition, thermal stability and crystallization kinetics of Ge₂₀Se_{80? x} Cd _x (x = 2.5, 5, 7.5 and 10 at. %) glasses. Differential scanning calorimetry results under non-isothermal conditions for the studied glasses are reported and discussed. The values of the glass transition temperature (T_g ) and the peak temperature of crystallization (T_p ) were found to be dependent on heating rate and Cd content. From the heating rate dependence of T_g and T_p , the values of the activation energy for glass transition (E_g ) and the activation energy for crystallization (E_c ) were evaluated and their composition dependence discussed. The thermal stability of the glasses was evaluated using various thermal stability criteria such as ΔT, H_g and S. The stability calculations emphasize that the thermal stability decreases with increasing Cd content.     

Characterization of new quaternary chalcogenide As–Ge–Se–Sb thin films

This paper reports the effect of replacement of selenium by antimony on the optical gap and some other physical parameters of new quaternary chalcogenide As₁₄Ge₁₄Se_{72? x} Sb _x (where x = 3, 6, 9, 12 and 15 at%) thin films. Thin films with thickness 200–220 nm of As₁₄Ge₁₄Se_{72? x} Sb _x were prepared by thermal evaporation of the bulk samples. Increasing antimony content was found to affect the average heat of atomization, the average coordination number, number of constraints and cohesive energy of the As₁₄Ge₁₄Se_{72 ?x} Sb _x alloys. Optical absorption measurements showed that the fundamental absorption edge is a function of composition. Optical absorption is due to allowed, non-direct transition and the energy gap decreases with the increasing antimony content. The chemical bond approach has been applied successfully to interpret the decrease in the optical gap with increasing antimony content.     

Magnetic Parameters of Hg1–x Mn x Se1–y S y and Hg1–x Mn x Te1–y S y Crystals

The magnetic susceptibility of Hg_1–x Mn _x Se_1–y S _y and Hg_1–x Mn _x Te_1–y S _y crystals is investigated by the Faraday method at H = 3 kOe in the temperature interval T = 77–300 K. It is established that the specific features of are due to Mn–S–Mn–S, Mn–Se–Mn–Se, and Mn–Te–Mn–Te clusters and mixed Mn–Se–Mn–S and Mn–Te–Mn–S clusters of different sizes in which the indirect exchange antiferromagnetic interaction between Mn atoms is realized through chalcogen atoms. Based on the dependences 1/_Mn = f(T), the magnetic parameters are determined and their dependences on the crystal composition (x and y) are established.     

PAL spectroscopy of rare-earth doped Ga–Ge–Te/Se glasses

Positron annihilation lifetime (PAL) spectroscopy was applied for the first time to study free-volume void evolution in chalcogenide glasses of Ga–Ge–Te/Se cut-section exemplified by glassy Ga₁₀Ge₁₅Te₇₅ and Ga₁₀Ge₁₅Te₇₂Se₃ doped with 500 ppm of Tb³⁺ or Pr³⁺. The collected PAL spectra reconstructed within two-state trapping model reveal decaying tendency in positron trapping efficiency in these glasses under rare-earth doping. This effect results in unchanged or slightly increased defect-related lifetimes τ₂ at the cost of more strong decrease in I₂ intensities, as well as reduced positron trapping rate in defects and fraction of trapped positrons. Observed changes are ascribed to rare-earth activated elimination of intrinsic free volumes associated mainly with negatively-charged states of chalcogen atoms especially those neighboring with Ga-based polyhedrons.     

Thermal and optical analysis of Te-substituted Sn–Sb–Se chalcogenide semiconductors

Bulk amorphous samples of Te-substituted Sn₁₀Sb₂₀Se_70−X Te _X (0≤X≤12) were prepared using a melt quenching technique. Calorimetric studies of the samples were performed using differential scanning calorimetry (DSC) and the glass transition temperature and crystallization temperature were evaluated from DSC scans. The glass transition temperature T _g exhibits a sharp decrease for small Te substitution of X=2, thereafter increases with increase in Te content up to X=10, and then decreases for further Te substitution. The apparent activation energy for glass transition and the activation energy for crystallization were calculated using Kissinger, modified Kissinger, and Matusita equations. The change in glass transition temperature T _g has been explained based on the bond formation energy of different heteropolar bonds. The optical band gap of thermally evaporated thin films of Sn₁₀Sb₂₀Se_70−X Te _X (0≤X≤12) was calculated from reflectance and transmittance data. The optical band gap variation with tellurium content exhibits a sharp decrease for an initial tellurium substitution of X=2 similar to that of the glass transition temperature and thereafter a peak is observed in optical band gap around X=4 composition.     

Map of Two-Dimensional Tungsten Chalcogenide Compounds (W–S,W–Se,W–Te) Based on USPEX Evolutionary Search

JETP Letters - New two-dimensional nanostructures of W–X composition (X = S, Se, Te) are predicted using the evolutionary algorithm implemented in the USPEX software package. Based on the...     

Determination of the thickness and optical constants of amorphous Ge–Se–Bi thin films

The effect of varying bismuth concentration on the optical constants of amorphous Ge₂₀Se_{80? x} Bi _x (where x = 0, 3, 6, 9 and 12 at%) thin films prepared by thermal evaporation has been investigated. The transmission spectra T(λ) of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. An analysis proposed by Swanepoel [J. Phys. E: Sci. Instrum. 16 (1983) p.1214], based on the use of the maxima and minima of the interference fringes, was applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Increasing bismuth content was found to affect the refractive index and extinction coefficient of the Ge₂₀Se_{80? x} Bi _x films. Optical absorption measurements show that the fundamental absorption edge is a function of composition. With increasing bismuth content, the refractive index increases while the optical band gap decreases.     

Interpretation of the change in optical constants of different compositions of Ge–Se–In in terms of cohesive energy

Compositional dependencies of the optical and physical properties of as-deposited amorphous Ge_xSe_90?xIn₅ films (with 5≤x≤30 at%), prepared by thermal evaporation have been studied. The optical energy gap $E_g^{opt}$ is derived from Tauc's extrapolation in the strong absorption region in terms of transmission and reflection spectra. The relationship between the optical gap and chemical composition of the Ge_xSe_90?xIn₅ (with 5≤x≤30 at%) amorphous system is discussed in terms of the chemical bond approach. The refractive index, n and film thickness, d have been determined by an envelope method using transmission spectra. It is observed that the refractive index, n of Ge_xSe_90?xIn₅ thin films increases with increasing x, over the entire spectral range, which is related to both the increased density and average coordination number.     

Crystallization kinetics and Avrami index of Sb-doped Se–Te–Sn chalcogenide glasses

Bulk amorphous samples of Sb-substituted Se_78?xTe₂₀Sn₂Sb_x (0 < x < 6) have been prepared using melt quench technique. The structure of Se_78?xTe₂₀Sn₂Sb_x (x = 0, 2, 4, 6) glassy alloys has been investigated using X-ray diffraction technique. Calorimetric studies of the prepared samples have been performed under non-isothermal conditions using differential scanning calorimetry (DSC) and glass transition temperature as well as crystallization temperature has been evaluated using DSC scans. The activation energy of crystallization kinetics (E_c) has been determined using model-free approaches such as Kissinger, Ozawa, Tang and Starink methods. The Avrami index (n) and frequency factor (K_o) have been calculated by Matusita and Augis–Benett method.     

Effect of SnI2 on the thermal and optical properties of Ge–Se–Te glasses

A systematic series of (Ge₂₀Se₁₅Te₆₅)_1?x–(SnI₂)_x (x = 0, 0.05, 0.1, 0.15) chalcogenide glasses have been prepared. The amorphous nature can be confirmed by XRD and SEM. With the SnI₂ content increasing, the indirect optical band gaps are decreased from 0.662 to 0.622 eV according to Tauc laws. The introduction of SnI₂ makes the glasses much easier to prepare and more stable against crystallization, making them drawable as optical fibers. The highest ΔT (130 °C) value for (Ge₂₀Se₁₅Te₆₅)_0.9–(SnI₂)_0.1 glass composition can be obtained. A slight red-shifting of the long-wavelength cutting-off edge from 18.4 to 19.4 μm was shown and it seems that SnI₂ in these glasses offers the improvement in the far-infrared properties.     

Atomistic model of physical ageing in Se-rich As–Se glasses

Thermal, optical, X-ray excited and magnetic methods were used to develop a microstructural model of physical ageing in Se-rich glasses. The glass composition As₁₀Se₉₀, possessing a typical cross-linked chain structure, was chosen as a model object for the investigations. The effect of physical ageing in this glass was revealed by differential scanning calorimetry, whereas the corresponding changes in its atomic arrangement were studied by extended X-ray absorption fine structure, Raman and solid-state ⁷⁷Se nuclear magnetic resonance spectroscopy. Straightening–shrinkage processes are shown to be responsible for the physical ageing in this Se-rich As–Se glass.     

Effect of germanium addition on the physical properties of Se–Te glassy semiconductors

The effect of germanium addition on the physical properties, i.e. density, molar volume, compactness, number of lone-pair electrons, average coordination number, heat of atomization, mean bond energy, cohesive energy and glass-transition temperature, of (Se₈₀Te₂₀)_{100? x} Ge _x (x = 0, 2, 4, 6) bulk glassy alloys was investigated. The density of the glassy alloys is found to decrease with increasing Ge content. The molar volume and compactness of the structure of the glass were determined from the measured density. The mean bond energy is proportional to the glass-transition temperature. The cohesive energy of the samples has been calculated using a chemical bond approach and is correlated with an increase in the optical energy gap with increase in the Ge content. The heat of atomization was also calculated and correlated with the optical energy gap. The glass-transition temperature has been estimated using different methods and is found to increase with an increase of Ge content.     

Thermal Conductivity and Thermoelectric Power of Compounds in the Cu–Ge–As–Se System

Technical Physics - The influence of temperature (in the interval of 300–400 K) and concentrations on the electrical conductivity, thermal conductivity, and thermoelectric power of copper...     

Structural and physical–chemical properties of the CuGa5Se8, CuGa3Se5 and CuIn3Se5 compounds

Large-block (8×4×3 mm³) CuGa₅Se₈ crystals were obtained by the horizontal Bridgman method. Homogeneous CuGa₃Se₅ and CuIn₃Se₅ single crystals 12 mm in diameter and up to 40 mm in length were grown by directed crystallization of the melt. All three compounds were found to have the chalcopyrite-related structure. The melting points of these compounds were defined by means of the differential thermal analysis. The lattice parameters a and c as well as the axial thermal expansion coefficients α_a and α_c were determined as a function of temperature in the range from 90 to 650 K by the X-ray diffraction method. It is revealed that for all three compounds the coefficients of expansion along the a-axis are larger than those along the c-axis over the entire temperature range studied.