Effect of indium incorporation on properties of SnS thin films prepared by spray pyrolysis

Tin sulphide (SnS) thin films were deposited on glass substrate at different substrate temperature (T_s = 325 °C, 350 °C and 375 °C) by pyrolytic decomposition using stannous chloride and thiourea as precursor solutions. Also, indium-doped SnS thin films were prepared by using InCl₃ as dopant source. The dopant concentration [In/Sn] was varied from 2 at% to 6 at%. The XRD analysis revealed that the films were polycrystalline in nature having orthorhombic crystal structure with a preferred grain orientation along (1 1 1) plane. Due to In doping, the orientation of the grains in the (1 1 1) plane was found to be deteriorated. Atomic force microscopy (AFM) measurements revealed that the surface roughness of the films decreased due to indium doping. The optical properties were investigated by measuring the transmittance characteristics which were used to find the optical band gap energy, refractive index and extinction coefficient. The energy band gap value was decreased from 1.60 to 1.43 eV with increasing In concentration. The photoluminescence (PL) measurements of thin films showed strong emission band centered at 760 nm. Using Hall Effect measurements electrical resistivity, carrier concentration and Hall mobility have been determined.     

Effect of [Zn]/[S] ratios on the properties of chemical bath deposited zinc sulfide thin films

ZnS thin films have been prepared by chemical bath deposition (CBD) technique onto glass substrates deposited at about 80 °C using aqueous solution of zinc sulfate hepta-hydrate, ammonium sulfate, thiourea, ammonia and hydrazine hydrate. Ammonia and hydrazine hydrate were used as complexing agents. The influence of the ratio of [Zn]/[S] on formation and properties of ZnS thin films has been investigated. The ratio of [Zn]/[S] was changed from 3:1 to 1:9 by varying volumes and/or concentrations of zinc sulfate hepta-hydrate and thiourea in the deposition solution. The structural and morphological characteristics of films have been investigated by X-ray diffraction (XRD), scanning electron microscope and UV-vis spectroscopic analysis. ZnS films were obtained with the [Zn]/[S] ratio ranged from1:1 to 1:6. In the cases of [Zn]/[S] ratio ≥ 3:1 or ≤1:9, no deposition was found. Transparent and polycrystalline ZnS film was obtained with pure-wurtzite structure at the [S]/[Zn] ratio of 1:6. The related formation mechanisms of CBD ZnS are discussed. The deposited ZnS films show good optical transmission (80-90%) in the visible region and the band gap is found to be in the range of 3.65-3.74 eV. The result is useful to further develop the CBD ZnS technology.     

Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl₂·6H₂O), nickel nitrate hexahydrate (Ni(NO₃)₂·6H₂O), nickel hydroxide hexahydrate (Ni(OH)₂·6H₂O), nickel sulfate tetrahydrate (NiSO₄·4H₂O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 °C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl₂ and Ni(NO₃)₂ precursors. These films have been post-annealed at 425 °C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10⁻² Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.     

Characteristics of CuInS2 thin films synthesizes by chemical spray pyrolysis

Optical and Quantum Electronics - In this paper, a variable-coefficient generalized nonlinear Schrödinger equation, which can be used to describe the nonlinear phenomena in the optical fiber,...     

Mn doped ZnO nanostructured thin films prepared by ultrasonic spray pyrolysis method

Mn-doped ZnO thin films with different percentage of Mn content (0, 1, 3 and 5 at.%) and substrate temperature of 350 °C, were deposited by a simple ultrasonic spray pyrolysis method under atmospheric pressure. We have studied the structural and optical properties by using X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and ultra-violet visible near infrared (UV–Vis-NIR) spectroscopy. The lattice parameters calculated for the Mn-doped ZnO from XRD pattern were found to be slightly larger than those of the undoped ZnO, which indicate substitution of Mn in ZnO lattice. Compared with the Raman spectra for ZnO pure films, the Mn-doping effect on the spectra is revealed by the presence of additional peak around 524 cm⁻¹ due to Mn incorporation. With increasing Mn doping the optical band gap increases indicating the Burstein–Moss effect.     

超声喷雾热解法制备SnS薄膜的物性研究

用超声喷雾热解法制备SnS多晶薄膜,对比了三种不同前驱液配比浓度对SnS薄膜性能的影响。XRD测试表明,当前驱液为硫脲(0.5 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时,SnO2的衍射峰强度比较大;当前驱液为硫脲(0.6 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时,SnS的衍射峰占主要地位,其中也含有一定量的SnO2;当前驱液为硫脲(0.7 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时,退火后的薄膜为单一的SnS薄膜,具有斜方晶系结构。SEM观测发现,薄膜均匀、致密,前驱液中硫脲浓度较大时,颗粒也较大。透过谱测试表明,浓度对薄膜透过率影响较小。结合器件的暗I-V和C-V测试,用三种前驱液配比浓度所制备的器件的结特性差异不大;当前驱液中硫脲浓度较大时,载流子浓度相对较大。     

Synthesis and characterization of CuO thin films grown by chemical spray pyrolysis

In this study, nanostructured cupric oxide (CuO) thin films were deposited using simple spray pyrolysis technique on glass substrates with a fixed temperature at 375 \(^{\circ }\)C. The films were deposited at different precursor molarities 0.035, 0.05 and 0.1 M using (CuCl\(_{2}\cdot 2\)H\(_{2}\)O) as precursor. The characterizations used such as X-ray diffraction (XRD) shows the formation of pure polycrystalline CuO with tenorite phase which belongs to a monoclinic structure. Raman spectroscopy confirms what we obtained in XRD. The films deposited with 0.1 M show high absorbance. The gap energy decreased from 1.58 to 1.53 eV with increasing precursor concentration from 0.035 to 0.1 M. Other optical parameters such as refractive index, extinction coefficient and dielectric constants were calculated through absorbance/transmittance data extracted from spectrophotometry.     

Effect of indium doping in CdO thin films prepared by spray pyrolysis technique

Preparation of transparent and conducting indium doped CdO thin films by spray pyrolysis on glass substrate is reported for various concentration of indium (2-8 wt%) in the spray solution. The electrical, optical and structural properties of indium doped CdO films were investigated using different techniques such as Hall measurement, optical transmission, X-ray diffraction and scanning electron microscope. X-ray analysis shows that the undoped CdO films are preferentially orientated along (2 0 0) crystallographic direction. Increase of indium doping concentration increases the films packing density and reorient the crystallites along (1 1 1) plane. A minimum resistivity of 4.843×10⁻⁴ Ω cm and carrier concentration of 3.73×10²⁰ cm⁻³ with high transmittance in the range 300-1100 nm were achieved for 6 wt% indium doping. The band gap value increases with doping concentration and reaches a maximum of 2.72 eV for 6 wt% indium doping from 2.36 eV of that of undoped film. The minimum resistivity achieved in the present study is found to be the lowest among the reported values for In-doped CdO films prepared by spray pyrolysis method.     

Electrochromic and photoluminescence properties of cobalt oxide thin films prepared by spray pyrolysis

Cobalt oxide thin films were prepared by a facile spray pyrolysis technique, using a perfume atomizer with an aqueous solution of hydrated cobalt chloride salt with a molar concentration of 0.025?M as a source of cobalt. The films were deposited onto glass substrates at temperature of 350?°C. The structural, morphological, and electrochromic properties of the obtained films were studied. It was found from X-ray diffraction analysis that the films were polycrystalline in nature with spinel-type cubic structure and preferred orientation along [111] direction. The Scanning Electron Microscopy images revealed a porous structure with the average grain size around 200?nm. The cyclic voltammetry measurements revealed that Cobalt oxide thin film is an anodically coloring electrochromic material with a transmittance variation in the visible range of 31%, and a fast response time (about 2?seconds) and a good cycling stability. These electrochromic performances make cobalt oxide thin film an attractive material for using as an anodic electrochromic material in smart windows devices. The photoluminescence spectra exhibited a strong emission in the visible region confirming the good crystallinity properties of Co₃O₄ thin films.     

Quenching of photoconductivity in Fe doped CdS thin films prepared by spray pyrolysis technique

Fe doped CdS films are prepared using spray pyrolysis technique. All the samples are found to be of single phase and crystallized in hexagonal lattice. The X-ray diffraction peaks position of Cd_1−xFe_xS shifts to higher angle with increasing Fe concentration indicating decrease in cell volume. The temperature dependence of resistivity follows Arrhenius behavior having lower activation energy with increasing Fe concentration in dark while there is a little variation in light. Pure CdS films are having large photoconductivity. Upon Fe incorporation, this photoconductivity gradually decreases and for concentration more than 20%, it is almost vanished. Note worthy observation is the changes seen in morphology with AFM, viz. nanorod features seen in CdS is changed to continuous nanorod like structures depicting signatures of Ostwald ripening.     

Physico-chemical, optical and electrochemical properties of iron oxide thin films prepared by spray pyrolysis

Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at T_s ≤ 450 °C were amorphous; while those produced at T_sub = 500 °C were polycrystalline α-Fe₂O₃ with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the visible and infrared range. The cyclic voltammetry study showed that the films of Fe₂O₃ deposited on ITO pre-coated glass substrates were capable of charge insertion/extraction when immersed in an electrolyte of propylene carbonate (PC) with 0.5 M LiCLO₄.     

超声喷雾热解法制备氮掺杂纳米TiO_2薄膜及其光催化特性研究

利用超声喷雾热解法在玻璃衬底上制备了不同沉积温度下的氮掺杂纳米TiO2薄膜,并525℃的退火处理.通过SEM,XRD和UV-Vis透过光谱等表征手段研究了TiO2薄膜表面形貌、结构特性和光催化特性,并探讨了掺杂作用机理.SEM结果表明,在400℃温度下掺N(原子数分数4%)的TiO2薄膜表面比较均匀,致密性好;XRD分析得出,该薄膜是多晶锐钛矿结构;UV-Vis透过光谱分析得出,该薄膜在可见光区的平均透过率为82%,吸收边红移77 nm,计算得知其禁带宽度变小.在紫外光的照射下,氮掺TiO2薄膜对亚甲基蓝溶液具有良好的光催化降解作用,降解率可达46.6%.     

Study of the microstructural and photoluminescence properties of Li-doped ZnO thin films prepared by spray pyrolysis

Lithium-doped zinc oxide films were synthesized by spray pyrolysis technique, and their structural and optical properties were characterized by X-ray diffraction, transmission electron microscope, atomic force microscope, and photoluminescence spectroscopy. The effect of doping on the photoluminescence properties was investigated at room temperature (300 K). Polycrystalline nature of the films was confirmed from X-ray diffraction and electron microscopic studies. A two-dimensional fringe moiré pattern with spacing of 1.2 nm was observed for the doped thin film. Lithium doping has been found to increase the roughness of the surface, thus making the film more passivated. Lithium was found to play a key role in the excitonic as well as visible luminescence of ZnO.     

Gas sensing properties of nanostructured MoO3 thin films prepared by spray pyrolysis

Thin films of molybdenum trioxide (MoO₃) were deposited on common glass using the chemical spray pyrolysis technique. A (NH₄)₆Mo₇O₂₄4H₂0 solution 0.1 M was used as the precursor one. The influence of substrate temperature on the crystallographic structure, surface morphology and electrical behavior of MoO₃ thin films was studied. MoO₃ can exist in two crystalline forms, the thermodynamically stable orthorhombic α-MoO₃ and the metastable monoclinic β-MoO₃ phase. XRD-spectra showed a growth of α-MoO₃ phase percentage as substrate temperature increases from 420 K up to 670 K. Films deposited in the 500–600 K range have a clearly porous surface structure of nanometer order as can be seen in SEM images. Changes up to six magnitude orders were observed in MoO₃ thin films electrical resistance when films temperature varied from 100 K up to 500 K. The sensing property of these MoO₃ films was also studied. The sensitivity was investigated in the temperature range 160 and 360 K for H₂O and CO gases, respectively. Both of them are of reducing nature. In all studied cases sensitivity decreases slowly as film temperature is raised. At room temperature the sensitivity changes from 12 up to 75% depending on substrate temperature. The sensitivity for CO gas was found to be lower than that of H₂O.     

Determination of the optimal parameters for the fabrication of ZnO thin films prepared by spray pyrolysis method

In this work, ZnO thin films have been prepared by spray pyrolysis deposition method on the glass substrates. The effect of deposition parameters, such as deposition rate, substrate temperature and solution volume has been studied by X-ray diffraction (XRD) method, UV–Vis–NIR spectroscopy, scanning electron microscopy (SEM), and electrical measurements. The XRD patterns indicate polycrystalline wurtzite structure with preferred direction along (0 0 2) planes. Thin films have transparency around 90% in the visible range. The optical band gap was determined at 3.27 eV which did not change significantly. Evolution of electrical results containing the carriers’ density, sheet resistance and resistivity are in agreement with structural results. All the results suggest the best deposition parameters are: deposition rate, R = 3 ml/min, substrate temperature, T _s = 450°C and thickness of the thin films t = 110–130 nm.     

Structural, optical and electrical properties of molybdenum-doped cadmium oxide thin films prepared by spray pyrolysis method

Molybdenum-doped cadmium oxide films were prepared by a spray pyrolysis technique at a substrate temperature of 300?°C. The effect of doping on structural, electrical and optical properties were studied. X-ray analysis shows that the undoped CdO films are preferentially oriented along the (111) crystallographic direction. Molybdenum doping concentration increases the films?? packing density and reorients the crystallites along the (200) plane. A?minimum resistivity of 4.68×10^?4????cm with a maximum mobility of 75?cm²?V^?1?s^?1 is achieved when the CdO film is doped with 0.5?wt.% Mo. The band-gap value is found to increase with doping and reaches a maximum of 2.56?eV for 0.75?wt.% as compared to undoped films of 2.2?eV.     

Superhydrophobic and transparent ZnO thin films synthesized by spray pyrolysis technique

Superhydrophobic and transparent zinc oxide (ZnO) thin films were deposited by a simple and cost effective spray pyrolysis technique (SPT) onto the glass substrates at 723 K from an aqueous zinc acetate precursor solution. The solution concentration was varied from 0.1 to 0.4 M and its effect on structural, morphological, wetting and optical properties of ZnO thin films was studied. The synthesized films were found to be polycrystalline, with preferential growth along c-axis. A slight improvement in the crystallite size and texture coefficient is observed as the concentration of the solution is increased. SEM micrographs show the uniform distribution of spherical grains of about 60-80 nm grain size. The films were specular and highly transparent with average transmittance of about 85%. The spectrum shows sharp absorption band edge at 381 nm, corresponding to optical gap of 3.25 eV. The samples of texture coefficient less than 90% and roughness less than 75 nm are hydrophobic and above these values they become superhydrophobic in nature. The hydrophobicity coupled with high transmittance is of great importance in commercial application such as transparent self-cleaning surfaces, anti-fog, anti-snow, fluid microchips and microreactors.     

Physical properties of ZnO thin films deposited by spray pyrolysis technique

Thin films of ZnO have been prepared on glass substrates at different thicknesses by spray pyrolysis technique using 0.2 M aqueous solution of zinc acetate. X-ray diffraction reveals that the films are polycrystalline in nature having hexagonal wurtzite type crystal structure. The resistivity at room temperature is of the order 10⁻² Ω cm and decreased as the temperature increased. Films are highly transparent in the visible region. The dependence of the refractive index, n, and extinction coefficient, k, on the wavelength for a sprayed film is also reported. Optical bandgap, E_g, has been reported for the films. A shift from E_g = 3.21 eV to 3.31 eV has been observed for deposited films.