InAs/GaSb superlattices for advanced infrared focal plane arrays

We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3–5 μm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An investigation on the minority electron diffusion length with a set of six sample ranging from 190 to 1000 superlattice periods confirms that InAs/GaSb superlattice focal plane arrays achieve very high external quantum efficiency. This enabled the fabrication of a range of monospectral MWIR imagers with high spatial and excellent thermal resolution at short integration times. Furthermore, novel dual-color imagers have been developed, which offer advanced functionality due to a simultaneous, pixel-registered detection of two separate spectral channels in the MWIR.     

Temporal and frequency responses of p-n HgCdTe photodiodes

Theoretical expressions for the high-frequency behaviour of a p-n photodiode, limited by theRC-time constant and the diffusion time to the junction, are given. Comparisons with temporal and frequency response measurements on an HgCdTe photodiode have been performed. The good agreement between theoretical and experimental data suggests that this type of high-mobility semiconductor photodiode can be described using the derived model, in which a constant, saturated diffusion velocity is assumed.     

Optimization of Zn dopant profiles in a pin-diode/FET by combination of depth profiling techniques: a SIMS, ECV and AES study

Three depth profiling techniques have been combined to optimize the buried p-(Zn)-layer for the monolithic integration of a photodiode (PD) and a field-effect transistor (FET) for optoelectronic application. The Zn diffusion behaviour during MOVPE (metal organic vapour phase epitaxy) growth has been investigated. To meet the requirements of a shallow and a wide Zn profile simultaneously in one substrate a procedure including SiN_x masking, selective reactive ion etching (RIE) and substrate etching has been developed. The depth profiling analyses proved to be valuable tools for process optimization.     

吸收层特性和异质结界面电荷对12.5 μm长波HgCdTe光伏探测器响应率的影响研究

研究了12.5 μm长波HgCdTe探测器的吸收层厚度和异质结界面电荷对器件光响应率的影响.分析了吸收层厚度与吸收长度、扩散长度之间的联系,获得了设计最佳吸收层厚度的经验公式.研究结果显示入射光波长超过截止波长时,响应率随吸收层厚度增加单调增加,并逐渐饱和.响应率峰值对应的波长随吸收层厚度增加,有向长波偏移的趋势.最佳吸收层厚度值随少子寿命或入射光波长的增大而增大.同时,研究了衬底、钝化层与HgCdTe材料之间异质界面电荷对光响应率的影响,发现正的界面电荷在衬底异质结界面处形成诱导pn结,对响应率影响显著 关键词： 长波HgCdTe器件 光伏型红外探测器 光响应率 少子寿命     

Small Gaussian laser beam diameter measurement using a quadrant photodiode

A method that uses the quadrant photodiode has been shown to be relatively inexpensive and robust in measuring Gaussian laser beam diameters in two axes. This approach requires neither component rotation nor precision alignment, and it facilitates integration of Gaussian laser beam diameter measurement with laser beam tracking in instruments. The physical gap between sensors in the quadrant photodiode, however, limits laser beam diameter measurements to those in the millimeter range. Here, we describe a modified approach to measure Gaussian laser beam diameters that are significantly smaller.     

用激光微细加工制作平面型InGaAs/InP PIN 光探测器

 采用激光微细加工技术来制作单片集成光接收机的探测器,在制作过程中,用固态杂质源10.6 μm激光诱导Zn扩散工艺来进行探测器的p-区掺杂。制作出平面型顶部入射的InGaAs/InP PIN 光探测器,响应度为0.21 A/W。分析了激光诱导扩散中影响探测器性能的因素,因此提出了扩散温度自动控制、扩散区温度分布均匀化及激光焦斑与扩散区精确对准等相应的改进方法。     

Analysis of the mechanisms of electron recombination in HgCdTe infrared photodiode

This paper presents an experimental study of minority carrier lifetime and recombination mechanisms in HgCdTe photodiode. The excitation light source is a wavelength-tunable pulsed infrared laser. A constant background illumination has been introduced to minimize the effect of the junction equivalent capacitor and resistance. The decay of the photo-generated voltage is recorded by a storage oscilloscope. By fitting the exponentially decay curve, the time constant has been obtained which is regarded as the photo-generated minority carrier lifetime of the HgCdTe photodiode. The experimental results show that the carrier lifetime is in the range of 18–407 ns at 77 K for the measured detectors of four Cd compositions. It was found that the Auger recombination process is more effective for low Cd composition while the radiative recombination process became more important for high composition materials. The Shockley–Read–Hall recombination processes could not be ignored for all Cd composition.     

电子辐照下GaAs/Ge太阳电池载流子输运机理研究

通过地面模拟辐照试验获得不同能量电子辐照下GaAs/Ge太阳电池电学参数退化的基本规律, 在此基础上使用PC1 D模拟程序分析太阳电池内部的载流子输运机理, 建立不同能量的电子辐照下GaAs/Ge太阳电池中多数载流子浓度和少数载流子扩散长度随辐照粒子注量变化的基本规律. 研究结果表明: 多数载流子浓度和少数载流子扩散长度均随入射电子注量的增大而减小, 多数载流子去除率和少数载流子扩散长度损伤系数均随电子能量的增高而增大, 多数载流子去除效应和少数载流子扩散长度缩短分别是电池开路电压和短路电流退化的主要原因.     

Nonequilibrium Green Functions Approach to Strongly Correlated Fermions in Lattice Systems

Quantum dynamics in strongly correlated systems are of high current interest in many fields including dense plasmas, nuclear matter and condensed matter and ultracold atoms. An important model case are fermions in lattice systems that is well suited to analyze, in detail, a variety of electronic and magnetic properties of strongly correlated solids. Such systems have recently been reproduced with fermionic atoms in optical lattices which allow for a very accurate experimental analysis of the dynamics and of transport processes such as diffusion. The theoretical analysis of such systems far from equilibrium is very challenging since quantum and spin effects as well as correlations have to be treated non‐perturbatively. The only accurate method that has been successful so far are density matrix renormalization group (DMRG) simulations. However, these simulations are presently limited to one‐dimensional (1D) systems and short times. Extension of quantum dynamics simulations to two and three dimensions is commonly viewed as one of the major challenges in this field. Recently we have reported a breakthrough in this area [N. Schlünzen et al., Phys. Rev. B (2016)] where we were able to simulate the expansion dynamics of strongly correlated fermions in a Hubbard lattice following a quench of the confinement potential in 1D, 2D and 3D. The results not only exhibited excellent agreement with the experimental data but, in addition, revealed new features of the short‐time dynamics where correlations and entanglement are being build up. The method used in this work are nonequilibrium Green functions (NEGF) which are found to be very powerful in the treatment of fermionic lattice systems filling the gap presently left open by DMRG in 2D and 3D. In this paper we present a detailed introduction in the NEGF approach and its application to inhomogeneous Hubbard clusters. In detail we discuss the proper strong coupling approximation which is given by T ‐matrix selfenergies that sum up two‐particle scattering processes to infinite order. The efficient numerical implemen‐tation of the method is discussed in detail as it has allowed us to achieve dramatic performance gains. This has been the basis for the treatment of more than 100 particles over large time intervals. The numerical results presented in this paper concentrate on the diffusion in 1D to 3D lattices. We find that the expansion dynamics consist of three different phases that are linked with the build‐up of correlations. In the long time limit, a universal scaling with the particle number is revealed. By extrapolating the expansion velocities to the macroscopic limit, the obtained results show excellent agreement with recent experiments on ultracold fermions in optical lattices. Moreover we present results for the site‐resolved behavior of correlations and entanglement that can be directly compared with experiments using the recently developed atomic microscope technique. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Single-photon time response of reach-through APD

Time response of avalanche photodiode (APD) is very important in photon counting systems, and there are many models for circuit simulation. But these studies generally based on the carrier rate equations of steady-state condition, disagree with the single-photon-indicate condition. In this paper, a time response function based on an integration of APD’s sub-domain carriers for reach-through APD arising from a single photo-carrier is derived. The analytical results are shown to be in good accord with experimental results.     

32 × 32 SOI CMOS image sensor with pinned photodiode on handle wafer

We have fabricated a 32 × 32 silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor with a pinned photodiode on a handle wafer. The structure of one pixel is a four-transistor type active pixel sensor (APS) which consists of a reset and a source follower transistor on a seed wafer, and is comprised of a photodiode, a transfer gate, and a floating diffusion on the handle wafer. The photodiode could be optimized for better quantum efficiency and low dark currents because its process on the handle wafer is independent of that of transistors on a seed wafer. Most of the wavelengths are absorbed within the visible range, because the optimized photodiode is located on the handle wafer. The image has been captured by the fabricated 32 × 32 SOI CMOS image sensor with array pixels, vertical scanner, horizontal scanner, and delta-difference sampling circuit.     

Evaluation of the diffusion length of minority carriers in bulk GaAs

The diffusion length of minority charge carriers has been investigated in LEC GaAs, silicon-doped with doping density N_D - N_A ranging from 10¹⁶ to 10¹⁸ cm^-3, by surface photovoltage (SPV) and electron-beam-induced current (EBIC) of scanning electron microscopy (SEM) measurements. Au Schottky diodes have been evaporated along the diameter of wafers cut from different doping density ingots to determine the variation of minority carrier diffusion length with both the radial position on the slice and the carrier concentration. The diffusion length values obtained by optical and electron excitation enhance systematic differences, which can be explained by the different surface recombination weight in the carrier generation volume and by the injection level, too. In all the examined samples an M-shaped radial variation of the diffusion length has been observed; on the other hand, the mean value of L_p increases from 0.5 to 7 μm when the doping concentration increases. The authors correlate this distribution to the electrical inhomogeneity induced by native defects and associated recombination centres. The role of the dislocations, which induce two competitive effects, i.e. an enhanced recombination probability and a precipitate condensation, is here discussed.     

Influence of trap filling and junction capacitance charging on photovoltage transients in HgCdTe-based infrared photodiode

Open circuit transient photovoltage (TPV) decay measurements have been carried out on HgCdTe-based infrared photodiode at different bias-light power illumination. By employing a picosecond pulsed laser excitation with wavelength of \(4.5\,\upmu \hbox {m}\) on steady background illumination, the TPV decay varying behavior has been observed. The effect of junction capacitance and carrier traps on TPV decay can be decreased to the minimum saturation values by increasing the bias illumination level. The study indicates the TPV decay time constants are dominated by the discharging of junction capacitance, trap emission and photocarrier recombination. The minority carrier lifetime are affected by the carrier injection level.     

采用光纤技术实现拉曼光谱和扫描隧道显微镜实时联用测试

设计并制作了与扫描隧道显微镜（ＳＴＭ）探头和拉曼光谱仪相适配的光纤探测装置，该装置采用配有不很短焦距的自聚焦透镜以获得较大的相对孔径，并使用多束光纤以充分利用扫描隧道显微镜探针周围有限空间，提高了拉曼散射光的收集效率，获得具有较高信噪比的拉曼谱图，在该装置的基础上进一步建立拉曼－扫描隧道显微镜联用系统，初步实验表明该联用系统用于实时研究固／气和固／液界面体系是可行的，即利用扫描隧道显微镜可获得固体     

Determination of bulk and surface transport properties by photocurrent spectral measurements

Reliable minority carrier diffusion length and surface recombination velocity values have been obtained from stationary photocurrent measurements. A modified surface photovoltage method has been used to determine diffusion lengths longer than the wafer thickness in high-purity Si, whereas the spectral variation of the photocurrent has been employed to measure the surface recombination velocity. The novelty presented in this paper is that a Schottky diode has been employed in both the methods to collect generated charged carriers. Moreover the same Schottky diode has been employed in both the methods in order to avoid any a priori assumptions on the material transport parameters. This combined application of the two methods at the same device enables the determination of highly reliable results. Received: 17 February 2000 / Accepted: 28 March 2000 / Published online: 30 June 2000     

Semi-Lagrangian multistep exponential integrators for index 2 differential–algebraic systems

Implicit-explicit (IMEX) multistep methods are very useful for the time discretization of convection diffusion PDE problems such as the Burgers equations and the incompressible Navier–Stokes equations. In the latter as well as in PDE models of plasma physics and of electromechanical systems, semi-discretization in space gives rise to differential–algebraic (DAE) system of equations often of index higher than 1. In this paper we propose a new class of exponential integrators for index 2 DAEs arising from the semi-discretization of PDEs with a dominating and typically nonlinear convection term. This class of problems includes the incompressible Navier–Stokes equations. The integration methods are based on the backward differentiation formulae (BDF) and they can be applied without modifications in the semi-Lagrangian integration of convection diffusion problems. The approach gives improved performance at low viscosity regimes.     

Fast simulation code for heating, phase changes and dopant diffusion in silicon laser processing using the alternating direction explicit (ADE) method

Enhancements to our existing finite-differences code for the simulation of laser heating, melting and evaporation of silicon are presented. The Knudsen evaporation model has been added to the previously used enthalpy-based model in order to simulate laser pulses with pulse lengths down to a few nanoseconds. Fick’s diffusion law has also been incorporated allowing laser doping by dopant diffusion in silicon melt to be described. Finally, the basic equations for the alternating direction explicit method (ADE) have been adapted to consider nonlinear temperature-enthalpy relations, thus including affects due to phase changes. This improved the simulation speed by up to factor of 100 compared to standard explicit and implicit time integration methods. Details of the ADE algorithm and numerical stability issues are presented in this paper. Validation of the code is presented by comparing to different integration methods and to experimental results. The final code successfully simulates melting, evaporation and dopant diffusion by multiple laser pulses in three dimensions in an acceptable computing time.     

短脉冲激光与介质相互作用的扩散模型

推导了扩散近似方程,通过半无限大均匀介质计算,用扩散理论分析解验证了数值方法的有效性.模拟了光在非均匀介质内的传输过程,给出了介质内光通量随时间变化的空间分布.结果表明,该基于扩散模型的数值方法能够模拟短脉冲光在强散射介质中的传播过程以及漫散射光的时间变化特性,并且借助于光通量空间分布能够准确模拟非均匀介质内内含物的位置.     

Multiplex MQMAS NMR of quadrupolar nuclei

A multiplex phase cycling method (N. Ivchenko et al., J. Magn. Reson. 160 (2003) 52-58) has been used to record two-dimensional MQMAS spectra with a very short phase cycling. A straightforward procedure has been developed to easily process the data. Combining this Multiplex approach and the new Soft-Pulse-Adding-Mixing (SPAM) method considerably increases the signal-to-noise ratio of the conventional MQMAS experiment. The Multiplex acquisition procedure is much simpler than the echo/anti-echo method recently proposed, and has been applied with success to record (87)Rb spectra of RbNO(3) and (27)Al 3Q and 5Q MQMAS NMR of microporous aluminophosphate AlPO(4)-14.     

Real time correlation filter for optical particle counter

Particle signals are detected by two parallel measuring chains which consist of a detector and analog to digital converter. We have used OPT101 as photodiode and ADS7870 for A/D converter and the output signal from two parallel measuring chains is processed by on line correlation filter. This filter works as real time systems. A correlation algorithm has been applied for this work. The signal to noise ratio has been increased by applying correlation filter. The gain of the filter has been improved by introducing digital signal processing.