Phase transformation mechanism of In–Sb–Te through the boundary reaction between InSb and InTe

The boundary reaction between InSb and InTe bilayers shows that In₃Sb₁Te₂ (IST) is formed at the InTe side first due to the diffusion of Sb atoms from InSb to InTe rather than the diffusion of Te atoms from InTe to InSb at the crystallization temperature of IST. The diffusion of Sb atoms into InTe changes the atomic configuration of InTe, which leads to small lattice distortion and a coherent boundary region for the formation of IST crystalline thin films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Analyses of intrinsic inhomogeneity and metal segregation in samples of Ag–Ge–Se glasses

Ge_ySe_(1−y) glasses are semiconductors but when Ag is added above certain threshold concentration, Ag_x[Ge_ySe_(1−y)]_(100−x) glasses behave as fast ionic conductors [Ureña et al., Solid State Ionics 176 (2005) 505]. This peculiar behavior may be attributed to the intrinsically inhomogeneous nature of these glasses where zones rich in metals coexist with zones of the host material. The conductivity transformation may be ascribed to the percolation of the Ag rich phase [Pradel et al., J. Phys.: Condens. Matter 15 (2003) S1561].Ag_x[Ge_0.25Se_0.75]_(100−x) glasses either massive or as films were obtained by melt quenching and pulsed laser deposition (PLD), respectively, in compositions belonging to the Se rich corner of the ternary phase diagram. Their amorphous nature and intermediate range order was checked employing X-ray diffractometry (XRD), the short range order was characterized by extended X-ray absorption fine structure (EXAFS) (Ge and Se K absorption edge) and their microstructure was characterized by scanning electron microscopy (SEM) and small angle X-ray scattering (SAXS).     

Structural and electrical analysis of In–Sb–Te‐based PCM cells

Two In–Sb–Te compounds with low Te content (12 at.% and 17 at.%), deposited by metalorganic chemical vapour deposition, were implemented into prototype phase‐change memory devices of size 50 × 50 nm² and 93 × 93 nm². These chalcogenides yielded devices with higher threshold voltage than those based on Ge–Sb–Te alloys. The endurance and programming window were markedly improved (from 10³ to 10⁶ cycles and from 1 to 2 orders of magnitude, respectively) when employing the Te‐richer alloy. Moreover, in situ structural and electrical analysis on TiN/In–Sb–Te/dielectric stacks provided additional insight on the thermal stability of the two ternary phases In₃SbTe₂ and InSb_0.8Te_0.2, which were found to coexist in these compounds. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

金属材料在中强度激光辐照下的相变速度研究

在找出了使金属材料只发生液化相变的激光功率密度的前提下，借用金属液态与金属固态某些相似的性质，通过类比，给出了金属液化材料对激光的吸收率. 经过分析，指出了直接解析金属相变速度的不可能性. 通过建立金属液态内的能量方程，在质量守恒的前提下，求得了激光辐照金属的相变速度. 通过讨论发现，影响金属相变速度的因素不仅有激光的强度，而且还有激光的圆频率. 关键词： 金属材料 中强度激光 辐照 相变 速度     

Phase transition in potassium lithium sulphate

Phase transition and lattice parameter variation with temperature of potassium lithium sulphate have been studied. Precision lattice parameters have been determined at various temperatures, ranging 30°C to 400°C. The diffraction pattern obtained above 435°C differs from that taken at room temperature suggesting a structural change, contrary to the reports of Fischmeister and others. Presented at the Symposium on Crystallography and Crystal Physics, Osmania University, Hyderabad, December 1977.     

Phase transition of quantum-corrected Schwarzschild black hole

We study the thermodynamic phase transition of a quantum-corrected Schwarzschild black hole. The modified metric affects the critical temperature which is slightly less than the conventional one. The space without black holes is not the hot flat space but the hot curved space due to vacuum fluctuations so that there appears a type of Gross–Perry–Yaffe phase transition even for the very small size of black hole, which is impossible for the thermodynamics of the conventional Schwarzschild black hole. We discuss physical consequences of the new phase transition in this framework.     

Phase transition in a three-states reaction-diffusion system

A one-dimensional reaction-diffusion model consisting of two species of particles and vacancies on a ring is introduced. The number of particles in one species is conserved while in the other species it can fluctuate because of creation and annihilation of particles. It has been shown that the model undergoes a continuous phase transition from a phase where the currents of different species of particles are equal to another phase in which they are different. The total density of particles and also their currents in each phase are calculated exactly.     

Density–driven superfluid transition of the constrained bosons on a lattice

We formulate the Landau theory and study its consequences for lattice bosons, which are stabilized by a three-body on-site constraint. This is relevant for experiments with cold atoms in optical lattices, where the presence of three-body dissipative loss processes renders the occupation number n for bosons on short timescales effectively constrained to $n\le 2$. We elaborate on the Landau free energy expansion resulting from the Hamiltonian of bosons in the restricted Hilbert space, and present the phase diagram of the constrained Bose lattice gas.     

Role of Bi incorporation on glass transition kinetics in glassy Se78Te20Sn2 alloy

In this communication, we report the results of calorimetric measurements on the samples of recently synthesized multi-component glassy alloys of Se_78?xTe₂₀Sn₂Bi_x (0 ≤ x ≤ 6) system. For calorimetric study of glass transition kinetics, differential scanning calorimetry (DSC) technique has been used in non-isothermal mode. Peak glass transition temperature (T_g) is determined using the DSC scans. Kinetic parameters A and B of glass transition are determined using heating rate dependence of T_g. Activation energy of glass transition (E_g) has been calculated using Moynihan and Kissinger methods. Glass-forming ability and thermal stability are also determined using Hurby and Saad–Poulin relations, respectively.     

Phase transformation in Mg Sb_3Te thin films

Mg-doped Sb3Te films are proposed to improve the performance of phase-change memory （PCM）. We prepare Mg- doped Sb3Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb3Te. Especially Mg25.19（Sb3Te）74.81 shows higher Tc （~ 190℃） and larger Ea （~ 3.49 eV）, which results in a better data retention maintaining for 10 yr at ~ 112 ℃. Moreover Ra/Rc value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory （PCM）.     

玻色-爱因斯坦凝聚的相变特征

研究玻色-爱因斯坦凝聚的相变特征，证明了粒子间存在弱排斥相互作用的玻色系统的玻色-爱因斯坦凝聚是二级相变。     

Phase transition in a class of Hamiltonians

We consider a class of Hamiltonians for a system of one localized spin-1/2 particle per lattice site with the total spin as a good quantum number. We introduce a set of conditions in the form of a hypothesis relating the subpartition function, which is the partition function defined by the subset of energies with a specific value of spin. If the equality in the hypothesis is satisfied, then the system undergoes a phase transition as a consequence of Yang-Lee theorem. As an application, we estimate the bounds on the spectrum of the Heisenberg Hamiltonian. Supported by the National Science Foundation, Washington D.C. and the Robert A. Welch Foundation, Houston, Texas and partly supported by the United States Atomic Energy Commission, Contract Grant AT (40-1) 3992.     

Phase transition in a chloro-elpasolite,Cs2KInCl6

Using high-purity starting materials, we synthesized a new room-temperature Cs₂KInCl₆ phase (I): monoclinic (C2/c), a = 25.484(11), b = 7.699(2) and c = 13.225(3) Å, β = 100.69(3)°. A ferroelasticparaelastic phase transition is noted at T_c = 100°C (by Thermal Analysis and X-ray, Raman-scattering, electrical permittivity versus temperature) leading to the prototype Fm3m phase(II) with a = 10.870(5) Å, quenchable when very slightly spoiled by impurities.     

Effect of Al doping on the martensitic transition and magnetic entropy change in Ni-Mn-Sn alloys

Effect of Al doping on the martensitic transition and magnetic entropy change in Mn₅₀Ni₄₀Sn_10−xAl_x was investigated. The experimental results show that the martensitic transition temperatures increase with the increase of Al content due to cell contraction, while the martensitic transition temperature range decreases rapidly. Mn₅₀Ni₄₀Sn₈Al₂ alloy has the largest value of  (3.14 J/kg K) for the magnetic field changing from 0 to 10 kOe, which is nearly twice as large as that of Mn₅₀Ni₄₀Sn₁₀ alloy. It is demonstrated that a larger can be obtained due to the sharper magnetization change around martensitic transition.     

Phase transition and thermodynamic properties of Sr under high pressure

We have performed the first-principles and classical molecular dynamics simulations to investigate the phase diagram and thermodynamic properties of Sr under high pressure and temperature. The obtained solid phase diagram of Sr, based on the quasi-harmonic approximation (QHA), is greatly supported by the available experimental data under low pressure. From the coexistence-phase molecular dynamics simulations, we also obtained the high-pressure melting curve of Sr which shows good agreement with the experiment. While, the experimentally observed β-Sn structure of Sr-III was found to be mechanically unstable according to our phonon dispersion calculations and evolutionary algorithm structure searches. We find that α-U phase (space group Cmcm) is energetically favorable and is the good candidate of Sr-III.     

相变前后VO2薄膜光学性质的研究

测量了玻璃、熔融石英及蓝宝石衬底上VO2 薄膜变温过程的红外透过率谱 ,对样品相变前后的光学性质进行了研究。特定温度下VO2 薄膜发生相变 ,其光学性质随之发生突变。不同衬底、不同制作工艺影响相变发生的温度以及相变前后光学性质的变化量。蓝宝石衬底上磁控溅射所得的VO2 膜 5 μm处透过率的减小量ΔT为 70 % ,相对变化ΔT TRT为 94 % ,玻璃衬底上磁控溅射所得的VO2 膜 2 5 μm处ΔT =6 4 2 % ,而ΔT TRT高达 98% ,接近于 1。     

PcNi-VO2复合膜相变光谱特性研究

采用射频磁控溅射的方法在蓝宝石衬底上沉积了高品质的VO2薄膜,并在其上旋涂了酞菁镍[C8H17O]8PcNi薄膜.通过XRD研究了VO2薄膜的微结构.利用红外光谱仪观察了PcNi/VO2复合膜相变前后光学性质的改变,发现PcNi膜在1.5～5.5 μm对VO2膜有增透作用,PcNi/VO2复合膜相对于VO2膜的热色性和相变温度都没有改变.预期PcNi/VO2膜比单一PcNi膜和VO2膜的光限幅能力会更强.     

Phase transition properties of the spin-1 Blume-Emery-Griffiths model with random transverse crystal field

Phase transition properties of a spin-1 Blume-Emery-Griffiths model (BEGM) with random transverse crystal field is studied by the effective field theory for a simple cubic lattice. In T−D_x space, we obtain the phase diagrams with the ratio α between the biquadratic interaction and the exchange interaction as well as a tunable parameter l of the transverse crystal field. The tricritical point (TCP) appears at α<0, which undergoes a crossover from positive to negative direction of the transverse crystal field when l<0. The TCP cannot be observed for α>0. The maximum critical temperature increases with the increase of α. The position of the peak value tends to the drift of negative or positive direction for a different magnitude or an imperfect (±) transverse crystal field distribution. In T−α space, the range of ordered phase is magnified when the ratio is changed from α<0 to α>0. The random transverse crystal field obviously affects the TCP.