Donor impurity states in coupled quantum well wires under hydrostatic pressure and applied electric field

In this work we study the binding energy of the ground state for a hydrogenic donor impurity in laterally coupled GaAs/Ga_1−xAl_xAs quantum well wires, considering the simultaneous effects of hydrostatic pressure and applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transverse section coupled by a central Ga_1−xAl_xAs barrier. Our results are reported for several sizes of the structure and we have taken into account variations of the impurity position along the growth direction of the heterostructure.     

Influence of quantization of band states on the effective electron mass in quaternary alloys

Summary An attempt is made to study the effective electron mass in quaternary alloys, taking a In_1−x Ga _x As _y P_1−y lattice matched to InP, by using the three-band Kane model under different physical conditions,e.g. bulk specimens, magnetic quantization, cross-field configuration, quantum well, electric-field-aided quantum well, magnetic-field-aided quantum well, quantum well under cross fields, quantum well wires, electric-field-aided quantum well wires, magnetic-field-aided quantum well wires and quantum well wires under cross fields by formulating the respective expressions. We have plotted the effective Fermi level mass with various physical variables under different conditions. In the presence of a quantizing magnetic field the effective mass depends on the spin splitting of Landau levels due to the spin-orbit splitting parameter of the valence bands. Under cross-field configuration and the various quantum confined low-dimensional systems, the effective masses depend on the respective quantum numbers in addition to the Fermi energies even for parabolic models because of the inherent features of such systems. In addition, the corresponding results for relatively wide-gap materials have also been obtained from our generalized formulations under certain limiting conditions.     

Influence of quantum confinement on the photoemission from superlattices of optoelectronic materials

We study the photoemission from quantum wire and quantum dot superlattices with graded interfaces of optoelectronic materials on the basis of newly formulated electron dispersion relations in the presence of external photo-excitation. Besides, the influence of a magnetic field on the photoemission from the aforementioned superlattices together with quantum well superlattices in the presence of a quantizing magnetic field has also been studied in this context. It has been observed taking into account HgTe/Hg_1−xCd_xTe and In_xGa_1−xAs/InP that the photoemission from these nanostructures increases with increasing photon energy in quantized steps and exhibits oscillatory dependences with the increase in carrier concentration. Besides, the photoemission decreases with increasing light intensity and wavelength, together with the fact that said emission decreases with increasing thickness exhibiting oscillatory spikes. The strong dependences of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six applications in the fields of low dimensional systems in general.     

Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field

In this work the effects of intense laser on the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga_1−xAl_xAs quantum wells are studied under, applied electric and magnetic field. The electric field is applied along the growth direction of the quantum well whereas the magnetic field has been considered to be in-plane. The calculations were performed within the density matrix formalism with the use of the effective mass and parabolic band approximations. The intense laser effects are included through the Floquet method, by modifying the confining potential associated to the heterostructure. Results are presented for the nonlinear optical absorption, the nonlinear optical rectification and the resonant peak of these two optical processes. Several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation have been considered. The outcome of the calculation suggests that the nonlinear optical absorption and optical rectification are non-monotonic functions of the dimensions of the heterostructure and of the external perturbations considered in this work.     

Optical properties of GaNAs/GaAs triple quantum well structures

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hν=E_g(GaN_xAs_1−x). A matrix transfer algorithm was used to match the GaN_xAs_1−x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.     

Excitons in cylindrical GaAs–Ga1−xAlxAs quantum dots under applied electric field

The exciton binding energy and photoluminescence energy transition in a GaAs-Ga_1−xAl_xAs cylindrical quantum dot are studied with the use of the effective mass approximation and a variational calculation procedure. The influence of these properties on the application of an electric field along the growth direction of the cylinder is particularly considered. It is shown that for zero applied field the binding energy and the photoluminescence energy transition are decreasing functions of the quantum dot radius and height. Given a fixed geometric configuration, both quantities then become decreasing functions of the electric field strength as well.     

Photoionization cross-section and binding energy of shallow donor impurities in Ga1−xInxNyAs1−y/GaAs quantum wires

We have investigated the effects of the nitrogen and indium concentrations on the photoionization cross-section and binding energy of shallow donor impurities in Ga_1−xIn_xN_yAs_1−y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy.     

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1−xAs/In0.52Al0.48As multiple quantum wells

Transmission electron microscopy (TEM) and photocurrent (PC) measurements were carried out to investigate the microstructural properties and excitonic transitions in In_xGa_1−xAs/In_0.52Al_0.48As multiple quantum wells (MQWs) for x = 0.54, 0.57 and 0.60. TEM images showed that high-quality 11-period In_xGa_1−xAs/In_0.52Al_0.48As MQWs had high-quality heterointerfaces. The results for the PC spectra at 300 K showed that the peaks corresponding to the excitonic transitions from the ground state electronic sub-band to the ground state heavy-hole band (E₁-HH₁) and the ground state electronic sub-band to the ground state light-hole band (E₁-LH₁) became closer to each other with decreasing In mole fraction and that E₁-HH₁ and E₁-LH₁ excitonic peaks shifted to longer wavelength with increasing applied electric field. The calculated values of the E₁-HH₁ interband transition energies were in qualitative agreement with those obtained form the PC measurements with and without applied electric field. These results can be helpful in understanding potential applications of In_xGa_1−xAs/In_yAl_1−yAs MQWs dependent on In mole fraction and applied electric field in long-wavelength optoelectronic devices.     

Electronic parameters and electronic structures in modulation-doped highly strained InxGa1−xAs/InyAl1−yAs coupled double quantum wells

Electronic parameters of a two-dimensional electron gas (2DEG) in modulation-doped highly strained In_xGa_1−xAs/In_yAl_1−yAs coupled double quantum wells were investigated by performing Shubnikov-de Haas (S-dH), Van der Pauw Hall-effect, and cyclotron resonance measurements. The S-dH measurements and the fast Fourier transformation results for the S-dH at 1.5 K indicated the electron occupation of two subbands in the quantum well. The electron effective masses of the 2DEG were determined from the cyclotron resonance measurements, and satisfied qualitatively the nonparabolicity effects in the quantum wells. The electronic subband structures were calculated by using a self-consistent method.     

Monodisperse Co,Zn-Ferrite nanocrystals: Controlled synthesis,characterization and magnetic properties

Co_xZn_yFe_3−x−yO₄ ferrite (x=1 to 0; y=0 to1) nanocrystals have been synthesized by reverse microemulsion method. The nanocrystals are then comprehensively characterized by X-ray diffraction, Fourier transform infrared spectroscopy, Field emission transmission electron microscopy (FETEM), and magnetic properties were measured by using Vibrating sample magnetometer. X-ray analysis showed that all the crystals were cubic spinel. The lattice constant increased with the increase in Zn substitution. FETEM reveals that particle size varies in the range from 3 to 6 nm. As the concentration of Zn increases the magnetic behavior varies from ferromagnetic at y=0 and 0.2 to superparamagnetic to paramagnetic at y=1. The Curie temperature decreases with increasing concentration of Zn.     

Spin transistor and quantum spin Hall-effects in CdBxF2−x–p-CdF2–CdBxF2−x sandwich nanostructures

Planar CdB_xF_2−x–p-CdF₂–CdB_xF_2−x sandwich nanostructures prepared on the surface of the n-type CdF₂ bulk crystal are studied to register the spin transistor and quantum spin Hall-effects. The current–voltage characteristics of the ultra-shallow p⁺–n junctions verify the CdF₂ gap, 7.8 eV, and the quantum subbands of the 2D holes in the p-type CdF₂ quantum well confined by the CdB_xF_2−xδ-barriers. The temperature and magnetic field dependencies of the resistance, specific heat and magnetic susceptibility demonstrate the high temperature superconductor properties for the CdB_xF_2−xδ-barriers. The value of the superconductor energy gap, 2Δ = 102.06 meV, determined by the tunneling spectroscopy method appears to be in a good agreement with the relationship between the zero-resistance supercurrent in superconductor state and the conductance in normal state, πΔ/e, at the energies of the 2D hole subbands. The results obtained are evidence of the important role of the multiple Andreev reflections in the creation of the high spin polarization of the 2D holes in the edged channels of the sandwich device. The high spin hole polarization in the edged channels is shown to identify the mechanism of the spin transistor and quantum spin Hall-effects induced by varying the top gate voltage, which is revealed by the first observation of the Hall quantum conductance staircase.     

The binding energy of hydrogen-like impurity in quantum dots with convex bottom in magnetic field

Within the framework of effective mass approximation and variational method, the electronic and impurity states in spherical quantum dots with convex bottom in magnetic field are calculated. Calculations are carried out both for on-center and off-center impurities. The impurity binding energy dependencies on radius, measure of convexity of quantum dot bottom, impurity position and magnetic field induction are obtained for the Ga_1-xAl_xAs/Ga_1-yAl_yAs system.     

Shallow impurity binding energy in lateral parabolic confinement under an external magnetic field

We have described the calculation of hydrogenic impurity binding energies in cylindrical GaAs–Ga_1−xAl_xAs quantum well wires (QWWs) with lateral parabolic confinement in the presence of an axial magnetic field. The numerical calculations of this system have been performed with the use of a variational procedure in the effective mass approximation. We observed sharp changes in binding energy for critical spatial confinement radius and B$B$ magnetic field values.     

Model of magnetic anisotropy in disordered semimagnetic semiconductors

We propose a model explaining the origin of cubic magnetic anisotropy in disordered semiconductor. We show that the magnetic anisotropy changes with the position of the Fermi energy in the valence band and the level of disorder in the crystal. The method is applied to Pb_1−x−ySn_yMn_xTe and Sn_1−xMn_xTe ferromagnetic semiconductor crystals.     

Microstructure characterization and magnetic behavior of NiAlxFe2−xO4 and Ni1−yMnyAl0.2Fe1.8O4 ferrites

NiAl_xFe_2−xO₄ and Ni_1−yMn_yAl_0.2Fe_1.8O₄ ferrites were prepared by the conventional ceramic method and were characterized by X-ray diffraction, scanning electron microscopy, and magnetic measurements. The single spinel phase was confirmed for all prepared samples. A proper explanation of data is possible if the Al³⁺ ions are assumed to replace Fe³⁺ ions in the A and B sites simultaneously for NiAl_xFe_2−xO₄ ferrites, and if the Mn²⁺ ions are assumed to replace Ni²⁺ ions in the B sites for Ni_1−yMn_yAl_0.2Fe_1.8O₄ ferrites. Microstructural factors play an important role in the magnetic behavior of Ni_1−yMn_yAl_0.2Fe_1.8O₄ ferrites with large Mn²⁺ content.     

Combined effects of magnetic and electric fields on the interband optical transitions in InAs/InP quantum wire

Combined effects of magnetic and electric fields on the confined exciton in an InAs_1−xP_x/InP (x=0.2) quantum well wire are investigated taking into account the geometrical confinement effect. Variational formulism, within the frame work of effective mass approximation, is applied to obtain the exciton binding energy. The second order harmonic generation and the optical gain are carried out using compact density method. The strain effects are included with the confinement potential in the Hamiltonian. The energy difference of the ground and the first excited state is found in the presence of magnetic and electric fields taking into the consideration of spatial confinement effect. The result shows that the optical properties are more influenced taking into account the effects of geometrical confinement, magnetic field and electric field. It is shown that the telecommunication wavelength can be achieved with the suitable doping barrier material with the wire material and the external perturbations.     

Influence of electric current and magnetic field on terahertz photoconductivity in Pb1 − x Sn x Te(In)

Photoconductivity of Pb_{1 ? x} Sn _x Te(In) solid solutions in the terahertz spectral range is defined by a new type of local electron states linked to the quasi-Fermi level. The paper deals with investigation of the influence of electric current and magnetic field on the amplitude of the terahertz photoconductivity in Pb_{1 ? x} Sn _x Te(In) alloys of different composition. It is shown that the density of local electron states responsible for the positive persistent photoconductivity decreases with increasing electric current via a sample, as well as with transition to the hole conductivity in samples with a high content of tin telluride (x > 0.26). It is found that the magnetic field dependence of the positive photoconductivity is non-monotonous and has a maximum. The maximum position in magnetic field is proportional to the terahertz radiation quantum energy. Mechanisms responsible for the effects observed are discussed.     

Theoretical study on InxGa1−xN/GaN quantum dots solar cell

In this work, the structure of In_xGa_1−xN/GaN quantum dots solar cell is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. Compared to p-n homojunction and heterojunction solar cells, the In_xGa_1−xN/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.     

Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study

The effect of hydrogen on donors and interface defects in silicon modulation doped Al_xGa_1−xAs/In_yGa_1−yAs/GaAs heterostructures has been investigated by photoluminescence (PL). Hydrogenation was carried out on two sets of samples, one set consists of high quality pseudomorphic heterostructures and another set having partially lattice relaxed structures prone to the defects. On exposure of high quality pseudomorphic structures to hydrogen plasma above 150 °C, a significant blue shift in the PL peak positions as well as bandwidth narrowing is observed. This indicates, the reduction in two-dimensional electron gas in the In_yGa_1−yAs quantum well due to hydrogen passivation of silicon donors in the Al_xGa_1−xAs supply layer. The reactivation of the donors is observed upon annealing the hydrogenated sample for 1 h at 250 °C under hydrogen ambient. Another interesting feature is a significant improvement in the PL of lattice-relaxed structures upon hydrogenation of the samples above 250 °C, which is attributed to the hydrogen passivation of interface defects due to the misfit dislocations.     

Effect of Co or Mn addition on the soft magnetic properties of amorphous Fe89−xZr11Bx (x=5, 10) alloy ribbons

The temperature and field dependent magnetic properties of melt-spun amorphous Fe_89−x−yZr₁₁B_x(Co,Mn)_y (x=5, 10 and 0≤y≤10) alloys in the temperature range 5-1200 K are reported. The Curie temperature and saturation magnetization at room temperature increase (decrease) almost linearly with Co (Mn) addition. With increasing Co concentration, the room temperature coercivity increases at the rate of 2.26 (0.28) A/m per at% for the x=5 (10) samples. The high-field magnetic susceptibility and local magnetic anisotropy decrease (increases) rapidly with increasing Co (Mn) concentration. The thermomagnetic curves show a marked increase in magnetization above 850 K corresponding to the crystallization of α-FeCo (α-Fe) phase in samples containing Co (Mn). The Curie temperature of the crystalline phase increases (remains same) with increasing Co (Mn) concentration with the formation of α-FeCo (α-Fe). Addition of Co up to 10 at% in Fe-Zr-B improves the room temperature saturation magnetization from 0.56 to 1.2 T, and Curie temperature from 315 to 476 K. Also, the coercivity increases with Co addition from 1.27 to 23.88 A/m for x=5 and from 7.64 to 10.35 A/m for x=10 alloy. The non-collinear spin structures that characterize Fe rich Fe-Zr-B amorphous alloys have been used to describe the observed results.