Spin-polarized transport properties of Fe-oligoporphyrin dimer-based molecular device

By applying the density functional theory and the nonequilibrium Green’s function formalism, we investigate the spin-polarized transport properties of a Fe-oligoporphyrin dimer (Fe-P2TA) sandwiched between two armchair single-walled carbon nanotube electrodes. The results show that the system can present high-efficiency magnetoresistance, spin-filtering, and low-bias negative differential resistance effects with the help of magnetic field modulation. The above results are explained by the evolution of the spin-polarized transmission spectra and the molecular projected self-consistent Hamiltonian eigenstates with applied bias. Therefore, the system provides the possibilities for a multifunctional molecular spintronic device design.     

Spin-filtering and rectifying effects for Al-doped zigzag-edged silicene nanoribbons with asymmetric edge hydrogenation

Spin transport features of the Al-doping zigzag-edged silicene nanoribbons (ZSiNRs) are investigated by using the nonequilibrium Green's function method and the spin-polarized density functional theory, where ZSiNRs are Si–H₂ bonded at one edge while Si–H bonded at the other to form an asymmetric edge hydrogenation. It is found that a perfect spin filtering effect (100%) in such ZSiNRs can be achieved in the calculated bias region. The rectifying performance of spin-polarized currents with a ratio larger than 10⁵ can be achieved by changing the position of the doping atoms. Moreover, the negative differential resistance (NDR) effect is also observed in the spin-polarized current. Our calculation suggests Al-doping ZSiNRs with the asymmetric edge hydrogenation hold promise for multifunctional spintronic devices.     

Spin transport properties in silicene-based heterojunctions with different edge hydrogenation

Using nonequilibrium Green's function in combination with the density functional theory, we investigate the spin-dependent transport properties of different edge hydrogenated zigzag silicene nanoribbon (ZSiNR) heterojunctions. The results show that H-6ZSiNR-H/H₀-6ZSiNR-H₀ (M1) and H-6ZSiNR-H/H₂-6ZSiNR-H₂ (M2) devices can exhibit spin filtering effect, negative differential resistance behavior, and rectifier effect when the two electrodes are aligned in spin antiparallel configuration. By analyzing the spin-resolved transmission spectra, the spatial resolved local density of states (LDOS), and the spatial resolved transmission eigenstates, as well as the band structure and symmetry of ZSiNR electrodes, we explained the mechanism for these intriguing properties.     

Modulation of the magnetic properties in zigzag-edge graphene nanoribbons by connection sites

Based on the first-principles method, the magnetic properties for zigzag–edge graphene nanoribbon (ZGNR) junctions are investigated. The results show the system had the ferromagnetic or antiferromagnetic ground state depending on the connection sites between ZGNR electrodes and the central ZGNR. The junction displays a metallic behavior when the central ZGNR is connected at the middle site of electrodes with a ferromagnetic state, but shows obvious spin semiconductor feature when the connection site is shifted to the edge of the ZGNR. For the antiferromagnetic states, all models show a semiconductor behavior, which originates from the spin-degenerate edge states. While for the antiparallel spin configuration, the spin density of the central ribbon is affected by connection sites, and it shows weaker little by little with the central ribbon moving from bottom to the middle site, which is different obviously from ferromagnetic or antiferromagnetic state. When one edge state of the central ZGNR is broken, bipolar spin semiconductor features can be obtained with different band gaps at suitable connection sites.     

Tuning of the electronic and transport properties of phosphorene nanoribbons by edge types and edge defects

By performing first-principle quantum transport calculations, we investigated the effects of the edge types and edge defects on the electronic and transport properties of phosphorene nanoribbons (PNRs). The calculated band structures show the PNRs with the zigzag and cliff edges are all metallic. The conductance of the cliff phosphorene nanoribbon (CPNR) is higher than that of the zigzag phosphorene nanoribbon (ZPNR). The low bias negative differential resistance behavior is only found in the ZPNR and the peak-to-valley current ratio is up to 10². More over, we found the carrier transport channels under low bias of ZPNR and CPNR mainly locate on the edges. The current-voltage characteristics show the defects induced by removing the phosphorus atoms from the edge can decrease the conductance of the ZPNR and CPNR obviously. The low bias negative differential resistance behavior of the ZPNR also can be weakened or removed by the edge defects.     

CMOS负阻单元逻辑电路及其发展前景

在回顾了多值逻辑(MVL)电路的优点、分析了共振隧穿器件(RTD)电路的特点和比较了各种类型负阻器件性能的基础上,提出了利用CMOS型负阻单元作为基础性器件设计并实现CMOS型逻辑电路的新概念,并指出了此研究领域的几个重点研究内容和方向。     

Tuning the IV characteristic of a cruciform diamine molecular device by connected position and B/N doping

By performing first-principle quantum transport calculations, we investigate the effects of connected position and B/N doping on the transport properties of a single cruciform diamine molecule connected to zigzag graphene nanoribbon leads. The negative differential resistance behaviors are found in IV characteristics of the undoped molecular device. The peak-to-valley current ratio can be modulated obviously by changing the connected position. Then, we find the B/N doped effects are sensitive to doping site in the connected region. The replacement of B/N atom on R1 (carbon atom in connected region close to the zigzag graphene nanoribbon) seldom affects the transmission spectrum around Fermi level. But, the replacement of B/N atom on R2 (carbon atom in connected region close to the molecule) can raise the transmission coefficient around Fermi level markedly leading to the large growth of the current at the low biases. In addition, the replacement of N atom on R2 can induce a negative differential resistance behavior in IV curve at low bias region.     

不同转移法对碳纳米管场发射特性的影响

通过印刷法、喷涂法和电泳沉积法转移经过处理的碳纳米管(CNT)原料到ITO电极上,高温烧结制备CNT阴极阵列,并对CNT的表面形貌和场发射性能进行测试分析。结果表明,不同转移方法对CNT阴极场发射性能的影响不同,印刷法、喷涂法及电泳沉积法3种方法制备CNT阴极场发射的开启电场分别为2.21、1.62和1.85 V/μm;当电场为2.3 V/μm时,喷涂法制备的CNT阴极场发射性能最佳,电泳沉积法制备CNT阴极次之,印刷法制备的CNT阴极最差,并根据金属半导体理论分析其原因。     

增益调制型波长转换中信号光波长的选择

增益调制型波长转换中 ,为得到转换后信号最大的消光比 (ER) ,信号光波长应该比半导体光放大器 (SOA)的小信号增益峰值波长长。采用分段模型 ,考虑了SOA中增益谱的不对称性以及增益峰值波长随载流子密度的漂移 ,深入研究了信号光功率 ,ER ,参考光功率 ,波长以及SOA注入电流对选择信号光波长λpk ,s 以及消光比改善量的影响。模拟计算表明 ,信号光功率每增加 3dB ,λpk ,s 就需向长波长移动约 7nm。信号光ER增加、参考光功率增加以及SOA注入电流的增加 ,λpk ,s 需向短波长移动。消光比改善量随信号光功率和电流的增加而显著增加 ,随信号ER的增加而降低 ,但是参考光功率和波长变化时影响不大     

Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxy

We report detailed studies of the optical properties of CdSe quantum dots (QDs) grown on ZnSe and ZnBeSe by molecular-beam epitaxy (MBE). We performed steady-state and time-resolved photoluminescence (PL) measurements and observe that nonradiative processes dominate at room temperature (RT) in the CdSe/ZnBeSe QDs structures, though these nonradiative processes do not dominate in the CdSe/ZnSe QDs structures up to RT. We performed secondary ion-mass spectrometry (SIMS) measurement and propose that the oxygen incorporation in the ZnBeSe layers (possibly caused by the reactivity of Be) may contribute to the dominant nonradiative processes at high temperatures in the QDs grown on ZnBeSe.     

采用双光谱参数表征GaN基蓝色LED的结温

设计了一种采用双光谱参数表征GaN基蓝色LED结 温的新方法。采用光谱仪(OSA)测量不同环境温度、不同脉冲电流驱动下,GaN基蓝色LED的 光谱分布,先忽略脉冲电流的热效应,构建驱动电流、质心波长 、半高全宽(FWHM)和结温四者之 间的关系;然后利用该关系,结合实际点灯条件下LED的光谱分布,计算出对应的LED结温和 驱动电流。再根据统计 得到的GaN基蓝色LED脉冲电流-结温修正系数,对所得结温进行修正,得到考虑脉冲电流 热效应后更准确的LED结 温。研究表明,不同类型的LED脉冲电流-结温修正系数差别较小,当脉宽为2ms时,1W G aN基蓝色LED的脉冲电 流-结温修正系数为－5℃/A。与正向电压法相比,采用双光谱参数法得到的结温平均误差 约为2℃。因此,双光谱参数法可以 较准确地测量GaN基蓝色LED的结温。     

MOCVD生长源流量对p型GaN薄膜特性影响的研究

利用金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上生长p型GaN:Mg薄膜,对不同二茂镁(CP2Mg)流量和Ⅴ族和Ⅲ族摩尔(Ⅴ/Ⅲ)比生长的p型GaN:Mg薄膜特性进行研究。研究表明,增加Ⅴ/Ⅲ比,可以降低螺旋位错密度,提高p型GaN晶体质量。当Ⅴ/Ⅲ比为3 800时,Cp2Mg流量最高为170sccm,获得p型GaN(002)面峰值半高宽(FWHM)最窄为232"。同时研究发现,单纯提高Ⅴ/Ⅲ比对降低刃型位错影响较不明显。     

Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED

We study the plasma-assisted molecular beam epitaxy of cubic GaN on GaAs(OOl) substrates by means ofin-situ reflection high-energy electron diffraction. The epilayers are characterized by x-ray diffraction, photoluminescence, and Hall measurements, and it is found that the overall best films are grown under a N/Ga ratio close to one. For anin-situ determination of the N/Ga ratio, the growth kinetics is studied via surface reconstruction transitions. The effective N flux giving rise to growth is measured using the transient behavior of the half-order diffraction streak intensity for various plasma operating conditions.     

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ～400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ～5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion.     

Galvanomagnetic properties of two-dimensional electron gases in strain relaxed InxGa1−xAs(x<0.40) heterostructures grown by molecular beam epitaxy on GaAs substrates

We have investigated, as a function of indium content x, the galvanomagnetic and Shubnikov de Haas (SdH) properties of two-dimensional electron gases (2DEG) formed at lattice matched, strain relaxed InAlAs/InGaAs heterojunctions. These were grown by molecular beam epitaxy on GaAs misoriented substrates with a two degree offcut toward the nearest (110) plane. Variable temperature resistivity and Hall measurements indicate an increase in the electron sheet density n_s from 0.78×10¹²cm⁻² for x=0.15 to 1.80×10¹² cm⁻² for x=0.40 at 300K, and from 0.75×10¹²cm⁻² to 1.67×10¹²cm⁻² at T=1.6K. The room temperature electron mobility, measured along the in plane [110], direction is independent of indium content and equals approximately 9500 cm²/Vs. For T<50K, the mobility is independent of temperature decreasing with increasing x from 82000 cm²/Vs for x=0.15 to 33000 cm²/Vs for x=0.40. The ratios (τ_t/τ_q) at 1.6K between the electron relaxation time τ_t and the single particle relaxation time τq, for the strain relaxed specimens, as well as for pseudomorphically strained Al_0.35Ga_0.65As/In_0.15Ga_0.85As structures grown on GaAs substrates, and In_0.52Al_0.48As/In_0.53Ga_0.47As heterostructures grown lattice matched on InP substrates. Such a study indicates the presence of inhomogeneities in the 2DEGs of the strain relaxed specimens which appear to be related to the process of strain relaxation. Such inhomogeneities, however, have little effect on the electron relaxation time τ_t which, at low temperatures, is limited principally by alloy scattering.     

A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown by molecular beam epitaxy

We present a comparison of material quality and device performance of metamorphic InGaAs/InP heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy (MBE) on GaAs substrates with two different types of buffer layers (direct InP and graded InAlP buffers). The results show that the active layer of InP-MHBT has more than one order of magnitude more defects than that of the InAlP-MHBT. The InAlP-MHBTs show excellent direct current (DC) performance. Low DC current gain and a high base junction ideality factor from the InP-MHBT are possibly due to a large number of electrically active dislocations in the HBT active layers, which is consistent with a large number of defects observed by cross-sectional transmission electron microscopy (TEM) and rough surface morphology observed by atomic force microscopy (AFM).     

Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (V_DS) regime and is obtained both at positive and negative gate-to-source bias (V_GS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of V_GS bias on the NDR characteristics is also investigated.     

Effects of H2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD

GaN epitaxial layers were grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. The flow-rate ratio of H₂ on the upper stream to NH₃ on the bottom stream is varied from 0.5 to 2. The growth condition and characterization of the GaN epitaxial layers are investigated in detail. The H₂ flow rate of the upper stream strongly affects the reactant gas flow pattern near the substrate surface and thus influences the quality of epitaxial layers. At the optimum H₂/NH₃ flow ratio of 1.0, we can obtain a good quality of GaN epitaxial layers which exhibit a strong near band-edge emis-sion in the 20 K photoluminescence (PL), a full width at half maximum of 66 meV for the 300 K PL, an electron mobility of 266 cm²/V-s and concentration of 1 × 10¹⁸ cm⁻³ at 300 K.     

基于级联外调制器的六倍频微波信号的光学生成技术研究

提出并实验验证了一种基于级联偏振调制器(Po lM)和双平行马赫-曾德尔调制器(DPMZM)的六 倍频微波信号的光学生成方法。PolM在射频(RF)信号调制下,会产生多个光边带,通过调 节偏振控制 器(PC)和检偏器仅获得奇数阶边带,然后通过DPMZM,其中一子MZM调制RF信号,工作在 最大 传输点(MATP),另一子MZM不调制RF信号,从而抑制掉一阶边带,保留三阶边带,经光 电探测器(PD)拍频获得六倍频微波信号。仿真结果表明,在不利用任何光、电滤波器的情况下,调 制器消光比为 理想状态(100dB)时,RF杂散抑制比(RFSSR) 为34dB。即使消光比为非理想状态(30dB)时,生成微波信号的RF SSR仍可以达到21dB。理论分析和实验结果均验证 了方案的可行性。     

Temperature,thickness, and interfacial composition effects on the absorption properties of (Hg,Cd)Te epilayers grown by liquid-phase epitaxy on CdZnTe

Transmission spectra of liquid-phase epitaxy (LPE) Hg_1-xCd_xTe with Cd mole fractions in the range of 0.23<x<0.30 have been obtained as a function of temperature and thickness. The results are described using a model consisting of exponential (Urbach) absorption in the band tail region and band-to-band absorption, predicted by a Kane k p model, for the above band gap region. Modifications to the Urbach and transmission expressions are found to be necessary to properly describe the shape, temperature, and thickness dependence of the spectra. A known composition gradient was found to be sufficient to describe the spectra obtained for thin (<20-μm) samples.