The distribution of silicon in single crystals of Fe-Si alloys grown from the melt

A method of measuring the distribution of the silicon concentration in single crystals of Fe-Si alloys was elaborated on the basis of determining the relative Seebeck coefficient of these alloys with respect to the reference metal. The dependence of the relative Seebeck coefficient of Fe-Si alloys versus copper on the concentration of silicon was measured in the range of 2–12 weight % Si. The distribution of silicon in a series of single crystals of Fe-Si alloys grown from the melt was also determined.The author thanks the members of the department of the mechanical properties of solids of the Institute of Physics, Czechoslovak Academy of Sciences, and especially the head of the department, Ing. B. esták, CSc., for making it possible to prepare the single crystals and for discussion of the paper. He also thanks Dr. M. Matyá, CSc., for valuable remarks and Ing. Z. Kubita for passing on his experience in the use of the measuring method. He is indebted to members of the analytical laboratory of the State Research Institute for Materials Protection, the analytical laboratory of the Metals Research Institute and the chemical department of the. Institute of Physics, Czechoslovak Academy of Sciences, for careful analyses of the samples.     

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock

The radial distribution of iron in Cz‐Si crystals grown from photovoltaic grade feedstock was analysed using deep level transient spectroscopy (DLTS). A high temperature annealing sequence followed by fast quenching to 273 K was used to transform iron silicide precipitates, formed after the crystal growth, to iron‐containing species detectable by DLTS. The results suggest a homogeneous radial distribution of iron over the crystal. From comparison of as‐grown and annealed samples, a strong suppression of iron precipitation close to the walls of the crystals becomes obvious and possible mechanisms of this phenomenon are discussed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect structure in EuS single crystals grown from the melt

The defect structure in EuS single crystals grown form the melt is studied by etch pitting, scanning and high-voltage electron microscopy. Circular and square etch pits and a second phase in the shape of thin hexagonal platelets are observed by etching. Microprobe analysis indicates the platelets to consist of Eu metal. In the transmission electron microscope, smoothly curved dislocations and helical dislocations, small dislocation loops and inclusions associated with dislocations are observed. The possible origin of the detected dislocation structure is considered with reference to climb and glide processes occurring during cooling down the grown crystals. The results corroborate the glide geometry of the NaCl lattice for EuS. On leave from Institute of Physics, Academic Sinica, Peking, VR China     

Dielectric properties of ZnSe crystals grown from melt

The frequency and temperature dependences of the real and imaginary parts of the permittivity of ZnSe crystals grown from melt have been measured in the low-frequency range. It has been found that the crystal samples cut from different parts of the ingot exhibit different properties depending on their distance from the ingot origin. The difference in the properties is explained by the dominant influence exerted on the polarization by point defects, the formation of which is associated with the deviation of the composition from stoichiometry, as well as by residual impurities and stresses in the crystals.     

Outside dislocations generated from phosphorus implanted silicon layers

The growth, movement and nature of outside dislocation, which propagate from heavily phosphorus (>10¹⁵ ions/cm²) implanted (111), (100), and (110) silicon layers into unimplanted outside regions by a compressive strain induced during 1100° C wet O₂ annealing, are investigated using transmission electron microscopy and x-ray diffraction topography. Outside dislocations are formed, mainly on (111) planes., by the glide motion of dislocation networks formed in implanted layers during early annealing. This results in dislocations extending into the unimplanted areas to different degrees, in the order of, from the largest to smallest, (111), (110), and (100) wafers. In (110) wafers, the [001] oriented dislocations in the implanted regions rise to the surface at the implant and unimplant boundary. On the other hand, the [110] dislocations penetrate into the unimplanted region. Two sets of orthogonal 〈110〉 oriented dislocations generated in (100) implanted wafers behave in the same manner as the [001] dislocations in (110) wafers. Some sources of the compressive strain related to the generation of these dislocations are discussed.     

Fractal structure formation in GaSe crystals grown from melt

The structure of GaSe single crystals prepared by rapid cooling of melt has been studied. These crystals are shown to contain dendrites due to the nonequilibrium conditions of single-crystal preparation. Dendrites have a fractal structure with the Hausdorff measure equal to 1.7.     

On the magnetic properties of dislocations in silicon

The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformed Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the 60° dislocations are coupled along limited segments giving rise to superparamagnetic resonance.     

Damage studies in cubic ZnSe single crystals grown from melt

A microscopy study of the morphology of the damage produced by TEA-CO₂ laser pulses in cubic ZnSe single crystals grown from melt is presented. The observed bulk filamentary damage consists of relatively uniformly distributed elementary damaged zones, located at specific sites where absorbing inclusions could exist. Transmission electron microscopy and laser ion mass spectroscopy investigations revealed the absorbing inclusions to be thin graphite foils, originating from the crucible used for crystal growth.     

半导体硅熔体的有效(磁)黏度

用钕铁硼(NdFeB)永磁材料构建"魔环"结构的永磁体,向直拉硅生长的熔体所在空间引入磁场,采用回转振荡法测量不同磁场强度下硅熔体的有效黏度(磁黏度).在温度一定时,测得的磁黏度随着磁场强度的增加而增加,二者呈抛物线关系.熔硅温度升高,磁场影响加剧.1490—1610℃温度区间内,磁黏度有异常变化.当引入磁场强度为0068T时,熔硅有效黏度比原黏度增加2—3个数量级,证明引入磁场是硅单晶大直径生长时,抑制熔硅热对流的有效手段. 关键词： 硅熔体 有效(磁)黏度 魔环永磁体 回转振荡法     

Passivation of dislocations in silicon by hydrogenation

Multicrystalline silicon wafers containing dislocations have been investigated before and after hydrogenation, after external gettering by phosphorus diffusion and also after the two treatments.

It was found that the two treatments are complementary, and improve drastically the wafers.

As gettering by phosphorus is able to remove fast diffusers it is concluded that interaction of hydrogen with segregated oxygen atoms could explain the passivation of dislocations.     

Study of the trapping states in ZnS single crystals grown from gallium melt

The trapping levels in zinc sulphide single crystals grown from gallium melt have been investigated using thermoluminescence techniques. The observed peak at 175° K consists of two overlapping components at 173 and 200° K respectively. Thermal activation energies and frequency factors were calculated for both traps. The dependence of glow curve shape on excitation conditions is caused by the retrapping by non-filled 200° K traps of electrons freed from 173° K traps in the course of the glow curve run. In addition to the results on “pure” crystals, measurements were made on samples grown with chlorine, oxygen and copper impurities, as well. Although no positive identification of the chemical nature of the 173 and 200° K trapping centers has been possible, we find that our results are not inconsistent with a previously suggested model in which the traps are identified as complex defects. Comparison is also made with trap spectra observed earlier in gallium-doped zinc sulphide samples prepared by the usual methods.     

Faceting of sapphire crystals grown from a melt by the Stepanov method

The appearance of faces on cylindrical sapphire single crystals grown from a melt by the Stepanov method is studied by photogoniography and optical microscopy. The crystallographic indices of the detected faces are established, and the microstructure of the growth layers is investigated. A relationship between the faceting and the growth conditions is found. The experimental results are compared with data on the faceting of the sapphire crystals grown from a solution-melt and with the calculated specific free surface energies of the faces.     

Thermoelastic stress in thin large-area windows grown from melt by the Stepanov method

The mathematical model for thermoelastic stress in a thin large-area window grown from melt by the Stepanov method is considered. The distribution and magnitude of stress are analyzed depending on the height of the radiative shield and on the distance between the shield and growing window. The model includes the heat-conduction equation and the integral equations relating the thermal radiation fluxes and the temperatures of the surfaces involved in heat transfer.     

Laser properties of YAG : Nd grown from the melt contained in molybdenum crucibles

YAG:Nd grown from the melt using resitance furnace and molybdenum crucibles were compared with those grown by conventional method using r.f. heating and iridium crucibles. The former were succesfully grown in 98% Ar + 2% H₂ protective a mosphere using an excess of Y₂O₃ in the melt and after it annealed in an oxidizing atmosphere followed by treatment in hydrogen to reach the material with minimum losses. Laser rods machined from such crystals, showed nearly the same properties as those prepared by conventional method.     

Redistribution of dislocations in silicon near stress concentrators

The distribution of defects in dislocation tracks in silicon plates was studied for various indentation angles. The regularities of variations in the linear density and maximum path of dislocations in slip bands are established. A model is proposed to describe the distribution of dislocations in the dislocation tracks. By fitting the theory to the experimental data, the dependence of this distribution on the energy relaxation time is determined.     

First bulk MNBA-Et molecule crystal grown from the melt came into being

Several nonlinear optical organic crystals possess 1-2 order of magnitude larger nonlinearity than nonlinear optical inorganic crystals. Up to now, however, sophisticated guidewave element have not yet been realized with these organic crystals. The reasons would be to poor material properties and absence of suitable processing technology. Toray company in Japan devoted to develop this kind of guide-wave element for several