YAP:Ce闪烁晶体的光致激发荧光衰减常数测量

用波长为266nm的激光激发不同尺寸、不同掺Ce3+浓度的YAP:Ce闪烁晶体,测量其光致激光荧光衰减常数,测量结果表明:YAP:Ce闪烁晶体的光致荧光衰减常数约为18.2ns,且与实验晶体厚度及Ce3+掺杂浓度(0.1;～0.6;原子分数)无关.     

大面积LaBr3:Ce闪烁探测器伽马灵敏度和时间响应测量

在60Co放射性标准源场中,对国内新研制的大面积LaBr3∶Ce闪烁探测器伽马灵敏度进行了测量,并用GD100光电管分别与LYSO:Ce、ST401闪烁体构成闪烁探测器的伽马灵敏度进行了对比分析;应用CΓC-67型三通道的ns快脉冲辐射源对这种大面积新型闪烁晶体本身的时间响应特性进行了测量.实验测量结果表明:直径76 mm的大面积LaBr3∶Ce闪烁探测器伽马灵敏度与LYSO∶Ce、ST401闪烁探测器的同体积归一灵敏度比分别超过5和200;时间响应前沿2.56 ns,后沿56 ns,半高宽23.56 ns,衰减时间25.45 ns.     

国产YAP:Ce闪烁晶体的相对探测能力测量

为适应在n、γ混合脉冲辐射场中对低强度快脉冲γ辐射测量的需要,近年国内新研制出实用型YAlO3:Ce(YAP:Ce)快响应无机闪烁晶体.我们使用脉冲线性电流大于1.5 A的光电倍增管,分别配置这种晶体以及CeF3、NaI等晶体构成闪烁探测器,在放射性标准源场中,对晶体的相对探测能力进行测量.测量结果表明:国产新型YAP:Ce无机晶体对这1.25 MeV 射线的探测能力比同体积的CeF3平均高一个量级,是同体积NaI的40;左右;当晶体厚度小于2 mm时,YAP:Ce与CeF3、NaI的输出比值分别大于16和44;,说明厚度越薄晶体的相对探测能力越强.     

CeF3闪烁探测器对五种能量中子的甄别能力研究

用CeF3闪烁体和常用闪烁体ST401分别配特性相同的光电倍增管构成两种闪烁探测器,在1.2MeV、2.5MeV、3.5MeV、5.0MeV和14MeV等能量的稳态中子源场中,测量了这两种闪烁体探测器的电流输出,得到结果表明:上述能量的中子与CeF3闪烁探测器作用形成的电流比同尺寸ST401闪烁体构成探测器的输出电流均低一个量级以上,这些结果与这两种探测器在钴、铯γ源中测量结果比较,可以得出在n、γ混合辐射场中测量γ辐射时,CeF3闪烁探测器能够较好地屏蔽这些能量中子的干扰.     

几种有机、无机晶体相对灵敏度和时间特性测量实验

在进行中子/γ粒子测量时,一般采用致电离辐射探测器进行测量.闪烁体作为致电离辐射探测器的重要组成部分,需对闪烁体的特性进行实验测量.本文总结了在СГС-67型三通道γ加速器和DPF中子源上进行的NaI(Tl)、CeF3、PbWO4晶体的灵敏度、时间响应等特性的标定实验,分析了实验现象,合理地处理数据,给出了实验结果.     

YAP∶Ce晶体伽玛能响及抗中子能力研究

YAlO3∶Ce(YAP∶ Ce)是近年国内新研制出的实用型快响应无机闪烁晶体.本工作针对YAP∶ Ce晶体与光电倍增管组合构成闪烁探测器,根据闪烁体沉积能量与质能吸收系数等相关参数的核物理理论关系,通过解析方法计算了多种γ能量对应的灵敏度,同时应用Monte Carlo方法模拟,获得了YAP∶ Ce晶体对γ射线的能量响应理论趋势;并通过实验测量了该探测器对γ和中子多种能量点的灵敏度,以检验理论和模拟计算的可靠性.理论和实验结果表明:YAP∶ Ce闪烁探测器0.3 MeV～ 1.25 MeV能区γ灵敏度随能量的增加而平缓地增加;其中1.25 MeV能量的灵敏度比0.37 MeV能量的灵敏度高约70;;同时具有较强的抗中子干扰能力:1.25 MeV的γ灵敏度与DT(14.1 MeV)中子灵敏度相当,比DD(2.54 MeV)中子灵敏度高5倍多;并且实验结果与理论计算、M.C模拟结果差异在5;范围内.     

Li掺杂浓度对NaI∶Tl,Li晶体光学和闪烁性能的影响

具有中子-伽马双模探测能力的卤化物闪烁晶体在辐射探测领域展现出广阔的应用前景。本文使用布里奇曼法生长得到高光学质量的NaI∶Tl和NaI∶Tl, Li闪烁晶体，并系统研究了不同Li浓度掺杂NaI∶Tl晶体的光致激发和发射光谱、时间分辨光致发光曲线、X射线辐照发光光谱、伽马射线激发能谱，以及中子-伽马甄别性能。研究表明，NaI∶Tl晶体和NaI∶Tl, Li晶体在X射线激发下的发光峰位于345和410 nm,均来源于Tl⁺的sp-s²跃迁发光。随着Li浓度的增加，晶体的光产额由41 000 photons/MeV下降到23 000 photons/MeV,662 keV处的能量分辨率由7.0%劣化到9.6%。1%Li(原子数分数)掺杂的NaI∶Tl晶体具有最优的中子-伽马脉冲形状甄别(PSD)性能，品质因子(FoM)值达到4.56。     

低强度脉冲伽马辐射测量中LaCl_3、YAG∶Yb和CeF_3闪烁探测器优选

为了在低强度脉冲伽马辐射测量中获得更精密可靠的测试数据,对La Cl3(50 mm×30 mm)、YAG∶Yb(50mm×50 mm)两种新型闪烁探测器和常用Ce F3(45 mm×20 mm)闪烁探测器的灵敏度、伽马/中子甑别能力、时间响应特性、统计涨落等主要参量进行了实验测量和对比。实验测量结果表明:La Cl3闪烁探测器灵敏度最高;伽马/中子甑别能力比另两种闪烁探测器高1倍以上;时间响应与Ce F3闪烁探测器相当;统计涨落最小(测点注量率相当的情况下)。进行中子、伽马混合脉冲辐射场中的低强度脉冲伽马辐射测量时,三种闪烁探测器中,La Cl3闪烁探测器是一种更佳的实用候选闪烁探测器。     

LaBr3:Ce闪烁晶体的生长及性能研究

掺铈溴化镧(LaBr3:Ce)闪烁晶体具有光输出高、衰减时间短、能量分辨率高等优异特性,在核医学成像、地质勘探、石油测井、空间物理等核辐射探测领域具有广阔的应用前景.本文采用改进的坩埚下降法,利用自发成核成功地生长了Ce3+掺杂浓度5.0at;、尺寸φ50 mm×60 mm的LaBr3:Ce闪烁晶体,测试了晶体的光输出、能量分辨率和衰减时间等闪烁性能.结果表明,在137Cs(662 keV)放射源作用下,LaBr3:Ce晶体的光输出为同体积NaI:Tl晶体的155;,能量分辨率为3.3;,衰减时间为25 ns.     

RbY2Cl7:Ce晶体的生长和闪烁性能研究

采用坩埚下降法,在真空密封的石英坩埚中成功生长出复合稀土卤化物RbY2Cl7:Ce单晶.此晶体属于正交晶系,晶胞参数为:a=1.27469 nm,b=0.69302 nm,c=1.26655 nm.熔点为617℃.表征了该晶体的X射线光致激发-发光光谱、激发发射光谱、γ射线多道能谱及激发衰减曲线等闪烁性能.RbY2Cl7:Ce的激发-发射光谱显示发射峰在389 nm左右,激发峰在336 nm左右.在137Cs源的γ射线激发下能量分辨率约为9.8;,闪烁衰减时间约为35 ns.     

高光输出快衰减高温无机闪烁晶体的研究与发展

无机闪烁晶体在影像核医学诊断、工业在线无损检测、油井勘测以及高能离子探测等领域有着广阔的应用背景.尽管不同应用领域对闪烁晶体性能的要求各异,但是不同应用领域要求闪烁晶体具有高光输出、快响应速度以及优良的物化性质等特点却是一致的.因此,近年来,寻求具有高光输出快衰减等综合性能优良的无机闪烁晶体引起了人们的极大兴趣.本文综述了具有高光输出和快衰减无机闪烁晶体的研究与发展趋势,重点阐述了掺杂Ce3+离子的高温闪烁晶体的研究及发展情况.     

Equilibrium and out-of-equilibrium dynamics in a molecular layer of azopolymer floating on water studied by Interfacial Shear Rheology

We report the details of the construction and calibration of a sensitive surface rheometer, inspired by an instrument described in the literature, adapted to the study of photosensitive polymeric materials. By high resolution video tracking of the motion of a floating magnetized needle we are able to measure the viscoelastic complex shear modulus G of a Langmuir monolayer with an accuracy of 5*10^− 6 N/m. This instrument is then employed for the rheological characterization of a Langmuir monolayer of a photosensitive azobenzene polymer, which can be brought out of equilibrium by a suitable photoperturbation. The shear modulus is measured as a function of temperature, illumination power and wavelength. The reversible rheological changes induced in the film by photo-perturbation are monitored during time, observing a transition from a predominantly elastic (G mainly real) to a viscoelastic regime (real and imaginary parts of G comparable). These results are confirmed by a comparison with independent measurements performed using other rheological techniques. Finally a discussion is made, taking into account the results of a recent X-ray photon correlation spectroscopy (XPCS) experiment on the same polymer in equilibrium and out of equilibrium.     

大尺寸掺钕和掺铥铝酸钇晶体的生长和退火技术

通过分析铝酸钇(YAP)晶体产生孪晶、开裂、色心和弥散性散射的原因,探讨了克服这些缺陷和问题的技术途径.采用提拉法生长了b轴方向的掺钕和掺铥铝酸钇(Nd:YAP和Tm:YAP)晶体,通过温场系统、生长工艺参数和切割工艺的优化,克服了晶体开裂的问题,晶体直径达到46mm;通过真空退火工艺,既显著减轻了紫外和可见区的色心吸收,又减小了晶体的应力,有助于克服晶体在加工过程中的开裂问题.晶体生长实验和晶体的显微观察表明:YAP晶体中的弥散状散射很可能同熔体中组分的均匀性有关,通过增大晶体的直径,增强强迫对流有助于减轻晶体中的弥散状散射.高质量b轴Nd:YAP和a轴Tm:YAP晶体已分别实现二极管泵浦大于140W的1.079μm和大于10W的1.99μm激光输出.     

Investigation on the blue photorefractive properties varied with MgO codoping in Ru:Fe:LiNbO3 crystals

Mg:Ru:Fe:LiNbO₃ crystals with various doping concentration of MgO have been grown by Czochralski method. The type of charge carriers and photorefractive properties in Mg:Ru:Fe:LiNbO₃ crystals were measured by two‐wave coupling method using Kr⁺ laser (476 nm) and He‐Ne laser (633 nm) as light sources. We found that holes were the dominant charge carriers under blue light irradiation while electrons were the dominant charge carriers under red light irradiation. Mg²⁺ ions behaved no longer as damage resistant, but promoter to the photorefractive properties at 476 nm wavelength. The photorefractive properties under blue light improved with the increase concentration of Mg²⁺ ions. The enhancement mechanisms of the blue photorefractive were suggested. Experimental results definitely showed that Mg‐doped two‐centre Ru:Fe:LiNbO₃ was a promising blue photorefraction material for holographic volume storage.     

Structure and optical damage resistance of In:Yb:Er:LiNbO3 crystals

A series of In:Yb:Er:LiNbO₃ crystals have been grown. The UV‐Vis absorption spectra and Infrared (IR) transmission spectra were measured and discussed in terms of the spectroscopic characterizations and the defect structure of the In:Yb:Er:LiNbO₃ crystals. The optical damage resistance was characterized by the transmitted beam pattern distortion method. The optical damage resistance of In (3.0mol %):Yb:Er:LiNbO₃ crystal is one order of magnitude higher than that of other crystal. The dependence of the optical damage resistance on the defect structure was studied. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Phase diagram of Si nanowire growth by disproportionation of SiO

Silicon nanowires have been grown in a horizontal tube furnace by disproportionation of silicon monoxide in combination with the vapor–liquid–solid mechanism. We present a phase diagram of the nanowire growth, indicating different morphologies for varying growth pressure and temperature. The morphology was characterized by scanning electron microscopy and detailed structural analysis was performed by transmission electron microscopy. A variety of morphologies is found and the optimum parameter range for the growth of straight and uniform nanowires consisting of crystalline silicon cores and amorphous SiO₂ shells is identified and discussed.     

Nd:YAG/Cr4+:YAG键合棒的制作与激光性能

采用直接键合的方法将Nd:YAG激光棒与Cr4+:YAG调Q元件结合在一起,对Nd:YAG棒和Cr4+:YAG在键合前后的激光性能进行了实验比较.结果表明,键合技术能够有效地提高输出能量,压窄脉宽.     

Mg:In:Er:LiNbO3晶体生长及波导基片光损伤的研究

在LiNbO3中掺进MgO,In2O3,Er2O3以Czochralski技术系统生长了Mg(3mol;):In(1mol;):Er(1mol;):LiNbO3,Mg(3mol;):In(2mol;):Er(1mol;):LiNbO3,Mg(3mol;):In(3mol;):Er(1mol;):LiNbO3晶体.Mg(3mol;):In(3mol;):Er(1mol;):LiNbO3晶体荧光光谱表明4I13/2→ 4I15/2(1.53μm)易实现激光振荡.采用质子交换工艺制作Mg:In:Er:LiNbO3晶体波导基片并以m线法研究Mg:In:Er:LiNbO3晶体波导基片的光损伤.发现抗光损伤能力依次为:Mg:In(3mol;):Er:LiNbO3＞Mg:In(2mol;):Er:LiNbO3＞Mg:In(1mol;):Er:LiNbO3>Er:LiNbO3.以锂空位模型研究Mg:In:Er:LiNbO3晶体抗光损伤能力增强的机理.     

Optical damage resistance of Mg:Ce:Fe:LiNbO3 crystals

Mg:Ce:Fe:LiNbO₃ crystals were prepared with fixed concentrations of Fe₂O₃ and CeO₂, and differing concentrations of MgO by the Czochralski technique. Their infrared transmission spectra were measured in order to investigate their defect structures and their optical damage resistance was characterized by the photoinduced birefringence change and transmission facula distortion method. The optical damage resistance of Mg:Ce:Fe:LiNbO₃ crystals increases remarkably when the concentration of MgO exceeds a threshold concentration. The dependence of the optical damage resistance on the defect structure of Mg:Ce:Fe:LiNbO₃ crystals is discussed in detail. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In doping effect on optical properties in Zn:In:Fe:LiNbO3 crystals

A series of Zn:In:Fe:LiNbO₃ crystals were prepared by Czochralski method. The crystal composition and defect structure were analyzed by ICP‐OE/MS, UV–vis and IR spectroscopy. The results show that with increasing In³⁺ doping concentration in melt, the segregation coefficients of both Zn and In ions decrease. The optical damage resistance of Zn:In:Fe:LiNbO₃ crystals was studied by the transmitted beam pattern distortion method. It is found that the optical damage resistance of Zn:In(3mol%):Fe LiNbO₃ crystals is two orders of magnitude higher than that of Zn:Fe:LiNbO₃. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)