Interlayer transport of an electron in bilayer graphene with phonon-induced lattice distortion in the presence of biased potential

The interlayer transport of an electron in bilayer graphene influenced by a phonon in the presence of a biased potential is investigated using the tight-binding approach. The in-plane optical mode E2g and out-of-plane optical mode B1g associated with the applied biased potential are considered to compute and discuss the interlayer transport probability of an electron initially localized on the bottom layer at the Dirac point in the Brillouin zone. Without the biased potential, the interlayer transport probability is equal to 0.5 regardless of the phonon displacement except for a few special cases. Applying a biased potential to the layers, we find that in different phonon modes the function of the transport probability with respect to the applied biased potential and phonon displacement is complex and various, but on the whole the transport probability decreases with the increase in the absolute value of the applied biased potential. These phenomena are discussed in detail in this paper.     

Prediction of superconductivity of Ta2AlC: in situ Raman spectrometry and density functional investigations

In this paper, in situ Raman spectra of Ta₂AlC are measured in the temperature range of 80–500 K at ambient pressure. The frequencies of the Raman modes decrease with increasing temperature, which have been explained by the anharmonic and thermal expansion effects. The line‐width of E_2g (ω₃) mode increases at elevated temperatures, which is found to be due to the anharmonic phonon–phonon scatterings. On the other hand, the line‐widths of E_2g (ω₁) and A_1g (ω₄) modes decrease continuously with increasing temperature, which is explained by the electron–phonon couplings of these two phonon modes with the Ta 5d electrons. The electron–phonon coupling strengths are obtained both in experiments and density functional calculations. Finally, Ta₂AlC is predicted to be a new superconductive MAX phase. Copyright © 2014 John Wiley & Sons, Ltd.     

Dielectric constant and soft mode of Pb1−xSnxTe

We try to explain the large dielectric constant of Pb_1-xSn_xTe pseudobinary alloy system in terms of the softening of TO-phonon mode due to electron—phonon coupling. The order of magnitude estimation shows that the interband optical deformation potential of several electron volts is sufficient to explain the softening of phonon.     

Microscopic mechanism of stability in yttria-doped zirconia

The relaxed configurations of yttria-stabilised zirconia (YSZ) between 3 and 10 mol % of Y₂O₃ were modeled using the pseudopotential technique. In the displacive limit of a double-well potential model, the vibrational mode corresponding to the soft phonon in pure c-ZrO₂ was calculated for each Y₂O₃ composition. These anharmonic vibrations, associated with the stabilization of YSZ, were investigated within the self-consistent phonon approximation making obtainable the fine structure in spectral density. In studying the phonon dynamics, we use the displacement probability density, which can quantify very accurately the transition temperature necessary for stabilizing the YSZ cubic phase.     

Physical insight of superconductivity of Nb2AlC: in situ Raman spectrometry investigation

Superconductivity of Nb₂AlC has been previously reported, but the origin is not clear. In this paper, in situ Raman spectra of Nb₂AlC are measured in the temperature range from 80 to 380 K at ambient pressure. The line‐width of E_2g (ω₁) mode increases with temperature which originates from the anharmonic phonon–phonon scattering. On the contrary the line‐widths of E_2g (ω₂) and A_1g (ω₄) modes decrease continuously at elevated temperature. The phenomenon is explained by the electron–phonon coupling. The origin of superconductivity is therefore interpreted by the coupling of Nb 4d electrons with E_2g (ω₂) and A_1g (ω₄) phonon modes. Copyright © 2013 John Wiley & Sons, Ltd.     

Interface polarons in a realistic heterojunction potential

The ground states of interface polarons in a realistic heterojunction potential are investigated by considering the bulk and the interface optical phonon influence. A self-consistent heterojunction potential is used and an LLP-like method is adopted to obtain the polaron effect. The numerical computation has been done for the Zn_1-xCd_xSe/ZnSe system to obtain the polaron ground state energy, self energy and effective mass parallel to the interface. A simplified coherent potential approximation is developed to obtain the parameters of the ternary mixed crystal and the energy band offset of the heterojunction. It is found that at small Cd concentration the bulk longitudinal optical phonons give the main contribution for lower areal electron densities, whereas the interface phonon contribution is dominant for higher areal electron densities. The interface polaron effect is weaker than the effect obtained by the three dimensional bulk phonon and by the two dimensional interface phonon models. Received 17 September 1998     

Observation of coherent optical phonons excited by femtosecond laser radiation in Sb films by ultrafast electron diffraction method

The generation of coherent optical phonons in a polycrystalline antimony film sample has been investigated using femtosecond electron diffraction method. Phonon vibrations have been induced in the Sb sample by the main harmonic of a femtosecond Ti:Sa laser (λ = 800 nm) and probed by a pulsed ultrashort photoelectron beam synchronized with the pump laser. The diffraction patterns recorded at different times relative to the pump laser pulse display oscillations of electron diffraction intensity corresponding to the frequencies of vibrations of optical phonons: totally symmetric (A _1g ) and twofold degenerate (E _g ) phonon modes. The frequencies that correspond to combinations of these phonon modes in the Sb sample have also been experimentally observed.     

Thermal transport in graphene

The recent advances in graphene isolation and synthesis methods have enabled potential applications of graphene in nanoelectronics and thermal management, and have offered a unique opportunity for investigation of phonon transport in two-dimensional materials. In this review, current understanding of phonon transport in graphene is discussed along with associated experimental and theoretical investigation techniques. Several theories and experiments have suggested that the absence of interlayer phonon scattering in suspended monolayer graphene can result in higher intrinsic basal plane thermal conductivity than that for graphite. However, accurate experimental thermal conductivity data of clean suspended graphene at different temperatures are still lacking. It is now known that contact of graphene with an amorphous solid or organic matrix can suppress phonon transport in graphene, although further efforts are needed to better quantify the relative roles of interface roughness scattering and phonon leakage across the interface and to examine the effects of other support materials. Moreover, opportunities remain to verify competing theories regarding mode specific scattering mechanisms and contributions to the total thermal conductivity of suspended and supported graphene, especially regarding the contribution from the flexural phonons. Several measurements have yielded consistent interface thermal conductance values between graphene and different dielectrics and metals. A challenge has remained in establishing a comprehensive theoretical model of coupled phonon and electron transport across the highly anisotropic and dissimilar interface.     

Surface optical Raman modes in GaN nanoribbons

Raman scattering studies were performed in GaN nanoribbons grown along [1 0 0]. These samples were prepared inside Na‐4 mica nanochannels by the ion‐exchange technique and subsequent annealing in NH₃ ambient. Detailed morphological and structural studies including the crystalline orientation were performed by analyzing the vibrational properties in these GaN nanoribbons. Pressure in the embedded structure was calculated from the blue shift of the E₂(high) phonon mode of GaN. Possible red shift of optical phonon modes due to the quantum confinement is also discussed. In addition to the optical phonons allowed by symmetry, two additional Raman peaks were also observed at ∼633 and 678 cm⁻¹ for these nanoribbons. Calculations for the wavenumbers of the surface optical (SO) phonon modes in GaN in Na‐4 mica yielded values close to those of the new Raman modes. The SO phonon modes were calculated in the slab (applicable to belt‐like nanoribbon) mode, as the wavenumber and intensity of these modes depend on the size and the shape of the nanostructures. The effect of surface‐modulation‐assisted electron–SO phonon scattering is suggested to be responsible for the pronounced appearance of SO phonon modes. A scaling factor is also estimated for the interacting surface potential influencing the observed SO Raman scattering intensities. Copyright © 2010 John Wiley & Sons, Ltd.     

Electron tunneling spectroscopy of the phonon spectrum of MgB<Subscript>2</Subscript>

The specific features of the phonon spectrum of the MgB₂ compound (T _c = 38 K) are investigated by tunneling spectroscopy. It is demonstrated that both the position and the energy width of the fundamental optical mode E _2g in the phonon spectrum are in good agreement with inelastic X-ray spectroscopy data but differ substantially from Raman spectroscopy results. Among possible factors responsible for this discrepancy, the anharmonic and nonadiabatic effects that are characteristic of the MgB₂ system are discussed.     

Carrier transport in Bi2Se3 topological insulator slab

Electron transport in Bi₂Se₃ topological insulator slabs is investigated in the thermal activation regime (>50 K) both in the absence (ballistic) and presence of weak and strong acoustic phonon scattering using the non-equilibrium Green function approach. Resistance of the slab is simulated as a function of temperature for a range of slab thicknesses and effective doping in order to gain a handle on how various factors interact and compete to determine the overall resistance of the slab. If the Bi₂Se₃ slab is biased at the Dirac point, resistance is found to display an insulating trend even for strong electron–phonon coupling strength. However, when the Fermi-level lies close to the bulk conduction band (heavy electron doping), phonon scattering can dominate and result in a metallic behavior, although the insulating trend is retained in the limit of ballistic transport. Depending on values of the operating parameters, the temperature dependence of the slab is found to exhibit a remarkably complex behavior, which ranges from insulating to metallic, and includes cases where the resistance exhibits a local maximum, much like the contradictory behaviors seen experimentally in various experiments.     

Calculation of the dark current in a quantum well infrared photodetector

Dark currents in a biased quantum well fabricated using Al_0.27Ga_0.73As/GaAs heterojunctions are calculated at two different temperatures including thermionic field emission currents arising from the electron scattering with phonons and plasmons. In the electron–phonon scattering process several modes due to heterojunctions such as the confined, half-space and interface longitudinal optic phonons are taken into account. It is found that the confined phonon scattering process results in maximum currents compared to those obtained in the half-space and interface scattering modes. However, the magnitude of the currents that resulted from the electron–plasmon scattering process is found to be higher than that found from the electron scattering with confined phonons. Comparison of the calculated dark currents with experiments shows that the thermionic emission currents due to phonon and plasmon assisted processes are essential to get better agreement with experiments than the previously employed bulk phonon scattering process.     

Coherent phonon excitation in bismuth

Ultrafast time-resolved reflectivity of a bismuth thin film evaporated on a silicon substrate is measured to investigate coherent phonons in bismuth. The reflectivity result is analyzed by a linear chirp approximation to obtain the time dependent frequencies of coherent phonons. Not only the optical modes are detected, which are generated by a combination of impulsive stimulated Raman scattering and displacive excitation of coherent phonon, acoustic phonon modes are also observed, which are emitted by the A_1g optical phonon.     

Raman scattering of NiS2

Raman scattering measurements of NiS₂ is done and five optical phonon peaks are found. These peaks are assigned to A_g, E_g and 3T_g phonons which are all of the Raman active optical phonons in pyrite-type crystal. The results are compared with those of FeS₂ and MnS₂.     

Ultrafast relaxation of electrons and selfconsistent electrical charging in insulators

Low energy electron scattering in insulators is described by a Monte Carlo program based on acoustic and optical phonon scattering as well as on impact ionization of valence band electrons, especially aimed to the scattering of ballistic and drifting electrons in wide gap dielectrics. There is a rapid relaxation of excited electrons within the conduction band of wide gap insulators like SiO₂ and Al₂O₃ over femtoseconds. The field-dependent transport and trapping parameters allow us to model the selfconsistent charge transport and charging-up of insulating samples during electron irradiation. The resulting spatial and time-dependent distributions of all currents j(x,t), charges ρ(x,t), the electric field F(x,t) and the potential V(x,t) are obtained and compared with experimental measurements.     

First-principles band-structure calculations as a tool for the quantitative interpretation of Raman spectra of high temperature superconductors

We have performed first-principles band structure calculations in order to investigate vibronic and optical properties of YBa₂Cu₃O₇. A formalism describing temperature dependent Raman spectra from such ab-initio results has been applied to the 500 cm^?1 apex oxygen mode and its overtone in good agreement with experimental results. The dynamical matrix of the five A_1g modes established by atomic-force calculations is studied in detail showing rather good agreement with experimental eigen-frequencies and normal coordinates. The effect of isotope substitutions on the phonon frequencies is investigated. We demonstrate that the calculated vibronic properties of high T_c materials are improved by applying a generalized gradient correction scheme for the treatment of exchange and correlation effects instead of the local-density approximation.     

Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/AlxGa1−xN spherical quantum dots

The theoretical investigations of the interface optical phonons, electron–phonon couplings and its ternary mixed effects in zinc-blende spherical quantum dots are obtained by using the dielectric continuum model and modified random-element isodisplacement model. The features of dispersion curves, electron–phonon coupling strengths, and its ternary mixed effects for interface optical phonons in a single zinc-blende GaN/Al_xGa_1−xN spherical quantum dot are calculated and discussed in detail. The numerical results show that there are three branches of interface optical phonons. One branch exists in low frequency region; another two branches exist in high frequency region. The interface optical phonons with small quantum number l have more important contributions to the electron–phonon interactions. It is also found that ternary mixed effects have important influences on the interface optical phonon properties in a single zinc-blende GaN/Al_xGa_1−xN quantum dot. With the increase of Al component, the interface optical phonon frequencies appear linear changes, and the electron–phonon coupling strengths appear non-linear changes in high frequency region. But in low frequency region, the frequencies appear non-linear changes, and the electron–phonon coupling strengths appear linear changes.     

Experimental study of electron-phonon properties in ZrB 2

High quality samples and absence of superconductivity down to 40 mK make of ZrB₂ the best normal state reference system for the superconducting isostructural MgB₂. Actually, the question of pairing has to be focused on the electron-phonon interaction in the normal state. After presenting the resistivity measurements of ZrB₂, we explain the details of the Bloch-Grüneisen and Einstein models used to deduce the first results. We then compare experimental de Haas-van Alphen effect data with theoretical Fermi surfaces to present additional results on electron quasi-particle renormalization. The estimations reveal an isotropic and negligible coupling constant of in average 0.145. The contribution of the coupling to the optical phonon modes is 0.082, in contrast to the known larger coupling of 0.283 [3] to the E_2g phonon mode in MgB₂.     

Enhancement of waves at rotational oscillations of a liquid

The generation of coherent optical phonons in an antimony film has been directly observed by the femtosecond electron diffraction method. The sample has been excited by a femtosecond laser pulse (λ = 800 nm) and probed with a pulsed photoelectron beam. Oscillations of the intensity corresponding to vibration frequencies of optical phonons excited by the laser have been observed in the obtained diffraction patterns: totally symmetric (A_1g) and twofold degenerate (E_2g) phonon modes of antimony and their combinations.