Application of a scanning electron microscope in simulating a beta-emission-induced current

The current induced by emission from a thin ⁶³Ni layer is simulated with allowance for the real spectrum of ejected electrons and their angular distribution in Si and GaN. The calculated results are compared with simulation data obtained for a monoenergetic electron beam perpendicular to the semiconductor detector. For both Si and GaN, the ratio between the currents induced by the SEM beam and β emission from ⁶³Ni is demonstrated to be almost completely independent of the diffusion length, if the electron-beam energy of a scanning electron microscope (SEM) is appropriately selected.     

Comparison of the efficiency of 63Ni beta-radiation detectors made from silicon and wide-gap semiconductors

The current induced by the radiation from a ⁶³Ni film of variable thickness is simulated taking into account the real spectrum of emitted electrons and their angular distribution for GaN. The efficiency of β-radiation detectors made from Si and SiC is estimated based on the results obtained in this paper and previously. Using a scanning electron microscope the efficiency of β-radiation detectors made from Si and SiC under conditions corresponding to β radiation from a Ni film with a thickness of 3 μm and activity of 10 mCi/cm² is analyzed. It is shown that the efficiency of real Si-based structures is virtually as good as the efficiency of SiC-based structures.     

Ta/Ni/Ta multilayered ohmic contacts on n-type SiC

The interface formation, electrical properties and the surface morphology of multilayered Ta/Ni/Ta/SiC contacts were reported in this study. It was found that the conducting behavior of the contacts so fabricated is much dependent on the metal layer thickness and the subsequent annealing temperature. Auger electron spectroscopy (AES) and X-ray diffraction analyses revealed that Ni₂Si and TaC formed as a result of the annealing. The Ni atoms diffused downward to metal/SiC interface and converted into Ni₂Si layer in adjacent to the SiC substrate. The released carbon atoms reacted with Ta atoms to form TaC layer. Ohmic contacts with specific contact resistivity as low as 3 × 10⁻⁴ Ω cm² have been achieved after thermal annealing. The formation of carbon vacancies at the Ni₂Si/SiC interface, probably created by dissociation of SiC and formation of TaC during thermal annealing, should be responsible for the ohmic formation of the annealed Ta/Ni/Ta contacts. The addition of Ta into the Ni metallization scheme to n-SiC restricted the accumulation of carbon atoms left behind during Ni₂Si formation, improving the electrical and microstructure properties.     

Fast etching and metallization of SiC ceramics with copper-vapor-laser radiation

The etching of polycrystalline SiC is studied with the help of radiation of a copper-vapor laser either in air or under the layer of a liquid (H₂O, DMSO). The etching rate in air is as high as 0.24 m/pulse, in DMSO 0.07 gm/pulse at an energy density of 16 J/cm². The etched surface is characterized with Scanning Electron Microscopy (SEM) and X-ray diffractometry. Etching of SiC ceramics in air revealed the partial amorphization of SiC and the formation of microcrystals of elementary Si with an average size of 300 Å. The etched surface of SiC ceramics takes on the ability to reduce Cu from a corresponding electroless plating solution. The adherence of the deposit is as high as 30 N/mm² and is a function of the scanning velocity of the laser beam.     

Room-temperature magnetic properties of SiC based nanowires synthesized via microwave heating method

Two kinds of ferromagnetic SiC based nanowires with and without Ni catalyst were successfully synthesized by employing microwave heating method. The comprehensive characterizations and vibrating sample magnetometer (VSM) have been applied to investigate the micro-structures and magnetic properties of as-grown nanowires. For the nanowires synthesized without using Ni catalyst, the diameters and lengths are in the range of 20–60 nm and dozens of micrometers, respectively. Particularly, the results of transmission electron microscopy (TEM) show that the nanowires consist of SiC core and SiO_x shell. The SiC/SiO_x coaxial nanowires exhibit room-temperature ferromagnetism with saturation magnetization (Ms) of 0.2 emu/g. As to the nanowires obtained using Ni catalyst, the scanning electron microscopy (SEM) results indicate that the Ni catalyzed nanowires have a nano-particle attached on the tip and a uniform diameter of approximately 50 nm. The vapor-liquid-solid (VLS) growth mechanism can be used to explain the formation of the Ni catalyzed nanowires. The detection result of VSM indicates that the Ni catalyzed nanowires possess the paramagnetism and the ferromagnetism, simultaneously. The enhancement of the ferromagnetism, compared with the SiC/SiO_x coaxial nanowires, could be attributed to the Ni₂Si and NiSi phases.     

Ni/4H-SiC 肖特基势垒磁场下输运性质的分析

采用高真空电子束蒸发的方法将镍 (Ni)淀积在 4H SiC(0 0 0 1)面上 ,制备出良好的Ni/4H SiC肖特基接触 .研究了Ni/4H SiC肖特基势垒在强磁场和低温下的I -V特性 ,并以热电子发射理论为基础 ,结合弛豫近似玻尔兹曼方程对Ni/4H SiC肖特基势垒在磁场下的输运性质进行了分析和计算 ,发现电流的变化与磁场的平方和电压成线性关系 ,和温度成反比关系 ,与实验结果基本符合     

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

When heated by high-energy electron beam (EB), SiC can decompose into C and Si vapor. Subsequently, Si vapor reacts with metal oxide thin film on substrate surface and formats dense SiO₂ thin film at high substrate temperature. By means of the two reactions, SiC/SiO₂ composite thin film was prepared on the pre-oxidized 316 stainless steel (SS) substrate by electron beam-physical vapor deposition (EB-PVD) only using β-SiC target at 1000 °C. The thin film was examined by energy dispersive spectroscopy (EDS), grazing incidence X-ray asymmetry diffraction (GIAXD), scanning electron microscopy (SEM), atomic force microscopy (AFM), backscattered electron image (BSE), electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Fourier transformed infra-red (FT-IR) spectroscopy. The analysis results show that the thin film is mainly composed of imperfect nano-crystalline phases of 3C-SiC and SiO₂, especially, SiO₂ phase is nearly amorphous. Moreover, the smooth and dense thin film surface consists of nano-sized particles, and the interface between SiC/SiO₂ composite thin film and SS substrate is perfect. At last, the emissivity of SS substrate is improved by the SiC/SiO₂ composite thin film.     

不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

Synthesis of nano-sized SiC precipitates in Si by simultaneous dual-beam implantation of C+ and Si+ ions

Nanometer-sized SiC precipitates were synthesized in situ in Si by simultaneous implantation of two ion beams of C⁺ and Si⁺ ions. The results of simultaneous dual-beam implantation are compared with those of sequential dual-beam ion implantation and of single-beam C⁺ ion implantation. Remarkable differences are observed regarding the content and the crystal quality of SiC precipitates as well as the defect structure of the Si substrate. The SiC precipitation during dual-beam synthesis is found to depend on the ion energy of the second beam and on the implantation mode, simultaneous or sequential. For suitable implantation conditions, simultaneous dual-beam synthesis can improve the in situ SiC formation in comparison to the single-beam synthesis. A higher density of SiC precipitates with better crystal quality was observed, whereas their size was not changed. The second ion beam enables a shift in the dynamic equilibrium of constructive and destructive processes for SiC formation. A model is proposed assuming that SiC precipitation preferentially proceeds in regions with vacancy defects. The implantation process itself creates vacancy-dominated and also interstitial-dominated regions. The balance of the local point-defect composition is shifted under the second ion beam. In this way, the conditions for SiC precipitation can be modified. Received: 18 February 2002 / Accepted: 17 May 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +49-351/260-3411, E-mail: koegler@fz-rossendorf.de     

Nickel metallisation of Si by dynamic ion-beam mixing

Abstract

Thin Ni films were prepared at room temperature by Ni metal vapour deposition and simultaneous irradiation by Ar ions with an energy of 2–20 keV. The reaction of Ni with Si during dynamic ion-beam mixing was studied. The fluences of the ion beam were 4.7 × 10¹⁷ and 8.9 × 10¹⁷ cm^?2, and arrival rate ratios Ni/Ar were 9.7 and 5.1. Concentration profiles of Ni, Si, C, and O were analysed with Auger electron spectroscopy; the surface morphology and the crystalline structure were investigated with a cross-sectional scanning electron microscope and X-ray diffractometry. The theoretical profiles were calculated with the dynamic Monte Carlo simulation T-DYN for comparison with the experimentally obtained profiles. It was possible to observe the ballistic mixing effects and also thermally activated formation of nickel silicide.     

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum arc (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 × 10¹⁶ ions/cm². Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 °C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 °C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively.     

Room temperature deposition of amorphous SiC thin films using low energy ion bombardment

Silicon carbide (SiC) films are prepared by single- and dual-ion beam sputtering deposition at room temperature, respectively. An assisting argon ion beam (ion energy Ei=150 eV) bombards directly the substrate surface to modify the SiC film surface. The thin films are characterized by the Fourier transform infrared spectroscopy (FTIR) and the Raman spectra. With assisting ion beam bombardment, the density of the Si–C bond in the film increases. Meanwhile, the excess carbon or the size of the sp² bonded clusters and the amorphous Si (a-Si) phase decrease. These results indicate that the composition of the films is mainly Si–C bond. UV-vis transmission shows that the E_opt increases steadily from 1.85 eV for the amorphous SiC (a-SiC) films without bombardment to about 2.29 eV for those with assisting ion beam bombardment.     

Surface lifetime degradation in Si and Ge under low energy electron irradiation

The bombardment of n-type Ge and Si by 10–30 keV electron beams is shown to reduce the surface lifetime τ_P of minority carriers but not to affect mobility μ_P or diffusion constant D_P. For experiments, the electron beam in a scanning electron microscope is replaced a chopped light source to perform modified Haynes-Shockley experiment, and the measurements is used to calculate μ, D and τ. The reduction in τ is interpreted in terms of an increase in surface recombination velocity s. At a dose of approximately 10¹⁷ electrons cm^?2 for Ge and 10¹⁵ electrons cm^?2 for Si, a saturation value for s appears to be reached after which further bombardment has no effect. The values of τ obtained from both light and SEM Haynes-Shockley experiments performed in vacuum agree within approximately 5% both prior to and after bombardment. The initial values of lifetime can be restored by etching the samples.     

Silicon carbide synthesis with energy pulses

Polycrystalline SiC layers were synthesized through nanosecond pulse heating of thin carbon films deposited on single-crystalline silicon wafers. The samples were submitted to electron beam irradiation (25 keV, 50 ns) at various current densities in vacuum (10^–4mbar) and to XeCl excimer laser pulses (308 nm, 15ns) in air. Rutherford backscattering spectrometry (RBS) showed that in the e-beam annealed samples mixing of the elements at the interface starts at current densities of about 1200 A/cm². The mixed layer thickness increases almost linearly with current density. From the RBS spectra a composition of the intermixed layers close to the SiC compound was deduced. Transmission electron microscopy (TEM) and electron diffraction studies clearly evidenced the formation of SiC polycrystals. Using the XeCl excimer laser, intermixing of the deposited C film with the Si substrate was observed after a single 0.3 J/cm² pulse. Further analysis evidenced the formation of SiC nanocrystals, embedded in a diamond film.     

入射电子能量对低密度聚乙烯深层充电特性的影响

高能带电粒子与航天器介质材料相互作用引起的深层带电现象, 一直是威胁航天器安全运行的重要因素之一. 考虑入射电子在介质中的电荷沉积、能量沉积分布以及介质中的非线性暗电导和辐射诱导电导, 建立了介质深层充电的单极性电荷输运物理模型. 通过求解电荷连续性方程和泊松方程, 可以得出不同能量 (0.1–0.5 MeV) 电子辐射下, 低密度聚乙烯 (厚度为1 mm) 介质中的电荷输运特性. 计算结果表明, 不同能量的电子辐射下, 介质充电达到平衡时, 最大电场随入射能量的增加而减小; 同一能量辐射下, 最大电场随束流密度的增大而增加. 入射电子能量较低时 (≤ 0.3 MeV) , 最大电场随束流密度的变化趋势基本相同. 具体表现为: 当束流密度大于3× 10^-9 A/m²时, 最大场强超过击穿阈值2×10⁷ V/m, 发生静电放电 (ESD) 的可能性较大. 随着入射电子能量的增加, 发生静电放电 (ESD) 的临界束流密度增大, 在能量为0.4 MeV时, 临界束流密度为6×10^-8 A/m². 当能量大于等于0.5 MeV时, 在束流密度为10^-9–10^-6 A/m²的范围内, 均不会发生静电放电 (ESD) . 该物理模型对于深入研究深层充放电效应、评估航天器在空间环境下 深层带电程度及防护设计具有重要的意义. 关键词： 高能电子辐射 低密度聚乙烯(LDPE) 介质深层充电 电导特性     

SiC film growth on Si(111) by supersonic beams of C 60

The development of electronic devices based on Silicon Carbide (SiC) has been strongly limited by the difficulties in growing high quality crystalline bulk materials and films. We have recently elaborated a new technique for the synthesis of SiC on clean Si substrates by means of supersonic beams of C₆₀: the electronic and structural properties of the film can be controlled by monitoring the beam parameters, i.e. flux and particles energy and aggregation state. SiC films were grown in Ultra High Vacuum on Si(111)-7×7, at substrates temperatures of 800 ^° C, using two different supersonic beams of C₆₀: He and H₂ have been used as seeding gases, leading to particles energy of 5 eV and 20 eV, respectively. Surface characterisation was done in situ by Auger and X-Ray photoelectron spectroscopy, as well as by low energy electron diffraction and ex situ by atomic force microscopy technique. SiC films exhibited good structural and electronic properties, with presence of defects different from the typical triangular voids. Received 20 November 2001     

Low-temperature formation of nanocrystalline SiC particles and composite from three-layer Si/C/Si film for the novel enhanced white photoluminescence

In this article, nanocrystalline silicon carbide (nc-SiC) and composite have been synthesized at an annealing temperature as low as 750 °C through the thermal reaction of Si/C/Si multilayers deposited on the Si(100) substrate by ultra-high-vacuum ion beam sputtering (UHV IBS) compared with the conventional thermal formation of crystalline SiC (c-SiC) nanostructures above 1,000 °C. The evolution of microstructure and reaction between C and Si was examined by Raman spectroscopy, Fourier transform infrared spectrometer (FTIR), high-resolution field emission scanning electron microscope (HR-FESEM), and high-resolution transmission electron microscopy. The c-SiC nanoparticles (np-SiC) of around 20–120 nm in diameter appeared on the top and bottom of the three-layer film with a particle density of around 2.63 × 10¹⁰ cm⁻² after 750 °C annealing. The composite of nc-SiC and Si nanocrystals (nc-Si) size below 5 nm embedded in an amorphous SiC (a-SiC) matrix appeared at the interface between the Si and C layers. Efficient thermal energy is the driving force for the formation of nc-SiC and composite through interdiffusion between C and Si. The broad visible photoluminescence (PL) spectrum of 350–750 nm can be obtained from the annealed composite Si/C/Si multilayer and deconvoluted into four bands of blue (~430 nm), green (~500 nm), green–yellow (~550 nm), and orange (~640 nm) emission, corresponding to the emission origins from nc-SiC, sp² carbon clusters, np-SiC, and nc-Si, respectively.     

Absence of plasmon-gain satellites in the Auger spectrum of silicon

Weak satellite structure in the Si Auger electron spectrum at 107 eV has been attributed to a plasmon-energy-gain mechanism by several authors. Detailed measurements of this transition both for Si and for SiC have been made which demonstrate that the plasmon-gain interpretation is incorrect. The satellite transition is observed at 15 ± 1 eV above the main L_2,3VV transition in both materials while the plasmon energy increases from 17 eV in Si to 22 eV in SiC. Experimental evidence is presented, in favor of multiple ionization of the initial state as the correct interpretation.     

氢氟酸刻蚀对Ni/6H-SiC接触性质的作用

采用浓度为10%的氢氟酸（HF）刻蚀6H-SiC单晶片,研究了HF刻蚀时间对Ni/6H-SiC接触性质的影响．经24?h刻蚀的SiC基片在溅射Ni层后,其接触表现良好线性的电流-电压（I-V）曲线．低于这个腐蚀时间的接触具有明显的势垒,但在大于1000℃快速退火后,也得到了良好线性的I-V曲线．X射线衍射（XRD）和俄歇能谱（AES）深度元素分析表明Ni₂Si和C是快速退火后的主要产物．XRD和低能反射电子能量损失谱表明表层的C 关键词： 欧姆接触 SiC 富碳层 互扩散