Irradiation induced radiative centres in ZnTe

High energy electron irradiation of ZnTe crystals at 4 K gives rise to a new luminescence line at 2.361 eV and to a broad band at 1.578 eV. These features disappear on annealing at T? 180 K. The defect responsible for these radiative transitions is tentatively identified with Frenkel type close pair. Another broad line at 2.065 eV appears after a 77 irradiation. Its annealing temperature is near 300 K.     

Stimulated self-trapped exciton emission in CsI:Pb

Defects of the type of V_K and Pb⁺ centres were created in CsI:Pb under the 4.03 eV XeCl laser line irradiation at 10 K. After irradiation, the self-trapped and localized exciton emission excited by the same XeCl laser line was observed as a result of the recombination of electrons, optically released from Pb⁺, with the V_K centres. A strongly superlinear dependence of the emission intensity on the excitation intensity was found for the 3.65 eV emission of the self-trapped exciton. A much weaker superlinearity was observed for the visible localized exciton emission. Optical amplification of the exciton emission was considered as the most probable reason of the observed phenomenon. At 10 K, optical gain G=3.74 was calculated for the self-trapped exciton emission.     

Spectral analysis of K-shell X-ray emission of magnesium plasma produced by ultrashort high-intensity laser pulse irradiation

Spectral analysis of K-shell X-ray emission of magnesium plasma, produced by laser pulses of 45 fs duration, focussed up to an intensity of ～10¹⁸ W cm^?2, is carried out. The plasma conditions prevalent during the emission of X-ray spectrum were identified by comparing the experimental spectra with the synthetic spectra generated using the spectroscopic code PrismSPECT. It is observed that He-like resonance line emission occurs from the plasma region having sub-critical density, whereas K-α emission arises from the bulk solid heated to a temperature of 10 eV by the impact of hot electrons. K-α line from Be-like ions was used to estimate the hot electron temperature. A power law fit to the electron temperature showed a scaling of I ^0.47 with laser intensity.     

Short-lived primary radiation defects in LiF crystals

The spectral and kinetic parameters of electron-pulse-initiated transient absorption and emission of LiF crystals were studied using pulsed spectrometry with a nanosecond time resolution. The measurements were performed in the spectral region of 6 eV, the temperature range of 11–150 K, and within 10^?8–10 s after the termination of an electron pulse. It is shown that the electron-pulse irradiation not only gives rise to F, V _k , and H centers in the LiF crystal but also to certain short-lived defects of two types that differ in the spectral positions of the absorptive and radiative transitions, the lifetime, and the temperature dependence of the production efficiency. Defects of type I feature absorptive transitions at 5.5 and 5.1 eV and a radiative transition at 5.8 eV, whereas the absorptive transitions at 5.3 and 4.75 eV and a radiative transition at 4.4 eV are characteristic of type-II defects. It is found that a variation in the ratio between the concentrations of the different types of short-lived centers in the range of 11–150 K does not affect the quantum efficiency of the F centers. It is assumed that the observed centers are self-trapped excitons of various types.     

Optical Emission of Molecular Hydrogen in a Recombining Hydrogen Plasma

We observed optical emission of molecular hydrogen in a recombining hydrogen plasma with an electron temperature of 0.1 eV and an electron density of 3 × 10¹²cm^–3. The optical emission intensities of molecular hydrogen in the recombining plasma were roughly 10%–45% of those in an ionizing plasma with an electron temperature of 4 eV. The ratio was greater for a transition line originated from an excited state with a larger vibrational quantum number. Because of the low electron temperature of 0.1 eV, the production processes of excited states are not considered electron impact excitation in the recombining plasma. Possible recombination processes are discussed which produce excited states of molecular hydrogen in the recombining plasma (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Luminescent properties of ZnO thin films treated by pulse-modulated high-power inductively coupled plasma

The effect of hydrogen plasma irradiation on luminescence properties of ZnO thin films was studied by using a pulse-modulated inductively coupled plasma technique. H-plasma exposure distance was changed to investigate the effect of hydrogen plasma irradiation on luminescent properties. Room temperature cathodoluminescence (CL) spectrum shows that hydrogen plasma irradiation can increase the efficiency of UV emission at 3.27 eV, and the improvement is strongly dependent on H-plasma exposure distance. For low temperature CL spectra, the intensity of donor-acceptor pair (DAP) transition at 3.315 eV has been increased more rapidly after hydrogen plasma irradiation, leading DAP to be the dominant transition.     

Stress-induced stimulated emission from excitonic molecule in CdS

Stimulated emission has been observed at the M line (2.543 eV) in optically excited CdS crystals under an applied uniaxial stress perpendicular to the C axis at 4.2 K. This emission is strongly polarized with an electric vector parallel to the applied stress. The observed polarization characteristics are successfully accounted for by assuming a radiative annihilation of an excitonic molecule, providing an experimental evidence for ascribing this emission to the excitonic molecule in CdS.     

利用离子激发发光研究低温条件下ZnO发光行为EI北大核心CSCD

离子激发发光(Ions beam induced luminescence,IBIL)可以实时原位分析不同温度、不同离子辐照条件下材料内部点缺陷的演变行为。本文利用2 MeV H^(+)研究了300,200,100 K温度下ZnO单晶内部点缺陷发光及其随注量的演变行为。实验中发现ZnO深能级发射和近带边发射,结合Voigt分峰与XPS实验结果,确定红光(1.75 eV)与V_(Zn)相关,橙红光(1.95 eV)来自Zn_(i)到O_(i)跃迁;对于与V_(O)相关的绿光(2.10 eV),其红移可能由于温度降低导致更多电子由导带释放到Zn_(i)。峰中心位于3.10 eV和3.20 eV近带边发射分别来自于Zn_(i)到价带的跃迁和激子复合,红移原因分别为Zn_(i)附近局域化能级和带隙收缩。利用单指数公式对发光强度进行拟合,获得的衰减速率常数(f)可以表征缺陷的辐射硬度,对比发现深能级发射峰在200 K时辐射硬度最大,而近带边发射峰在300 K时辐射硬度最大。     

Temperature,injection level,and frequency dependences of the luminescence in lightly - and heavily-doped CdTe:In

The temperature dependence, injection level dependence, and modulation frequency response of cathodoluminescence have been measured in Te-rich CdTe:In for materials with In concentrations ranging from 3 × 10¹⁵cm^?3 to 1 × 10¹⁸cm^?3. In lightly-doped material, the 80 K luminescence shows sharp band-edge emission near 1.57 eV and a broad impurity-defect band near 1.4 eV. As temperature increases, the 1.4 eV band quenches out, leaving only the band-edge emission. In heavily-doped material, the band- edge emission is absent and the 80 K luminescence shows only the 1.4 eV band. As the temperature increases from 80 K to 300 K, the 1.4 eV band does not quench out but rather undergoes a complex evolution into a long tail on the band-edge emission which begins to appear at approximately 140 K. At a temperature of 200 K, where the luminescence of the heavily-doped material consists of a broad but structured band approximately 0.2 eV in width, frequency response measurements indicate that band-to-band transitions contribute to the high-energy part of the broad luminescence while the remainder of the band results from slower transitions. The frequency and temperature dependences suggest that the luminescence involves an impurity level that has merged with a band edge at an In concentration of $\text{1 × 10}{}^{18}\text{cm}{}^3$. We interpret this behavior as suggesting that the 1.4 eV luminescence in Te-rich CdTe:In results from a partially-forbidden transition between conduction band and a deep acceptor level rather than from an intracenter type of transition.     

Non-direct transitions in temperature-dependent angle-resolved photoemission

Temperature-dependent normal photoemission data from Cu(0 0 1) have been obtained for 41 ⩽hv ⩽106 eV corresponding to direct-transition emission from various points along the Γ-Δ-X line, and temperatures between 77 and 977 K. Temperature effects are found to be important even in spectra at an ambient temperature of 295 K. A simple model involving phonon-assisted non-direct transitions strongly localized near the direct transitions is found to semi-quantitatively describe the temperature dependence of spectra and also to permit estimating the degree of Brillouin zone averaging involved.     

Ultraviolet Luminescence Depending on Zn Interstitial in ZnO Polycrystalline Films

The ultraviolet emission line at 3.315eV is observed at 8K in ZnO polycrystalline films and investigated by temperature-dependent photolumineseence spectra and cathodoluminescence spatial image. The relative intensity of 3.315 eV emission line depends strongly on growth and annealing conditions. The cathodoluminescence image shows that the 3.315 eV emission localizes on the surface and ridge of ZnO grain. These results suggest that the 3.315 eV emission attributes to Zn interstitials at the grain surface and ridge. This emission is stable in the range from 8 K to 300 K and contributes to the room temperature ultraviolet band.     

Luminescence of excitonic molecules in AgBr

Luminescence spectra of AgBr at the temperature range 5–50 K and under pulse excitation intensity up to ～ 0.7 MW cm^?2 are investigated. Intensity and temperature dependences of biexciton emission line (2.67 eV) yield thermodynamic determination of biexciton binding energy in agreement with the spectroscopic value (6.7 meV). The behaviour of biexciton emission in the investigated temperature range is explained by the concept of “biexciton pocket”. Some questions of the electron-hole liquid recombination radiation (2.60 eV) are discussed as well.     

Annealing of γ-ray irradiated lithium compensated p-type silicon

Abstract

Annealing behavior of electrical properties and photoluminescence spectra both at 77 °K in electron-irradiated melt-grown n-GaAs were investigated. Defects electrically active in the Hall mobility and carrier removal anneal through two stages centered at 250° and 460 °K. From the temperature dependence of carrier concentration the existence of a defect level located near 0.15 eV below the conduction band is supposed. Several emission bands are resolved at 1.51, 1.47, 1.415, 1.305 and ～1.2 eV in photoluminescence experiments. Electron irradiation (1.5–2.0 MeV) causes a remarkable decrease in emission intensity of 1.51 and ～1.2 eV bands. Recovery of emission intensity occurs remarkably when samples are annealed to 520 °K which would correspond to the 460 °K annealing stage for carrier concentration and Hall mobility. The 250 °K annealing stage is not observed in photoluminescence experiments. The 1.415 eV peak appears clearly after irradiation and grows remarkably with the 520 °K annealing, especially in Si-doped samples, resulting in large reverse annealing. This band is tentatively speculated to be a complex of Si on As site with As vacancy. Moreover, in samples doped with Te a new emission band at 1.305 eV (9500 Å) is observed after 470°–620 °K annealing.     

Systematic trends in the radiative emission rates for low- and medium-Z elements in high-temperature plasmas

The power radiated by an optically thin, low-density (N_e ≤ 10¹⁴ electrons/cm³) plasma has been calculated for the electron temperature range 1–10⁶ eV taking into account resonance line emission, direct recombination radiation, dielectronic recombination radiation, and bremsstrahlung from the ions of a given element. The ionization structure has been determined by using a corona equilibrium model in which collisional ionization and inner-shelled excitation followed by autoionization are balanced by direct radiative and dielectronic recombination. Based on the results for respresentative elements from carbon through nickel, graphs are presented of the maximum radiated power, the maximum emission temperature, and the mean charge at the maximum for each shell as functions of the atomic number Z. Assuming that the maximum emission temperature can be achieved, aluminum and iron are predicted to be the most efficient K-shell radiators for Z ≤28.     

Congruent Sr 0.61 Ba 0.39 Nb 2 O 6 doubly doped with Ce and Cr: PHoto- and thermoluminescence investigations

Congruent Sr x Ba 1 m x Nb 2 O 6 (SBN, x=0.61) doped with Ce or Cr ions exhibits enhanced photorefractive properties and new spectral features like increased red sensitivity. Here special emphasis is placed on the luminescence features of doubly doped Ce+Cr SBN crystals. The luminescence excitation and emission spectra combined with the absorption of the impurities allow to draw conclusions about the origin of the charge carriers und their recombination. The well separated thermo-luminescence peaks detected and their spectral line shape in emission point to specific recombination processes following the thermal liberation of light-induced electron trapping centers: Nb 4+ polarons and VIS-centers created at low temperature under light irradiation. The thermal activation energy for the hopping motion of Nb 4+ polarons and of VIS-centers are estimated to be 0.18 - 0.02 v eV and 0.30 - 0.05 v eV respectively. Possible excitation and recombination mechanisms in SBN:Ce+Cr are discussed.     

Hydrogen passivation effect on the yellow-green emission band and bound exciton in n - ZnO

Photoluminescence (PL) measurements performed on as-grown, hydrogenated, and annealed n-type ZnO bulk samples investigated the origins of their yellow (2.10 eV) and green (2.43 eV) emission bands. After hydrogenation, the defect-related peak at 2.10 eV was no longer present in the room temperature PL spectrum, the peak intensity at 2.43 eV was unchanged, and the intensity of the emission peak at 3.27 eV increased significantly. These results indicate that yellow band emission is due to oxygen vacancies, as the emission peak at 2.10 eV disappears when hydrogen atoms passivate these vacancies. The emission peak at 2.43 eV originates from complexes between oxygen vacancies and other crystal defects. We discuss the shallow donor impurities arising due to these hydrogen atoms in the ZnO bulk sample.     

Radioluminescence of synthetic and natural quartz

The effect of X-ray irradiation and thermal treatments on the radio-luminescence emission spectrum of both a natural pegmatitic quartz and a synthetic one was investigated. All the emission spectra could be deconvolved into the same set of five Gaussian components. Among the identified RL bands, a blue emission at 2.53 eV (480 nm) is enhanced under X-ray irradiation. A strong correlation with the sensitization of the so called “110 °C” TSL peak (in our measurements seen at lower temperature due to the lower heating rate) was proved, suggesting that the recombination centers associated with the 2.53 eV band are produced under X-ray irradiation and are involved in both RL and TSL luminescence mechanisms. When each irradiation was followed by heating up to 500 °C a strong sensitization of the RL band emitting at 3.44 eV and of the 110 °C TSL peak were observed. A perfect correlation between the RL and TSL emissions suggests that the recombination centers involved in the RL and TSL emissions are the same.     

Étude d'une surface de NaCl sous bombardement électronique de basse énergie: Influence de l'irradiation sur la charge de la surface

The preliminary results of angular low energy electron spectroscopy studies on cleaved NaCl surfaces are reported. The first problem to solve was to prevent the sample from charging, that is, to prevent the secondary emission coefficient from getting lower than unit. The case δ<1 is shown to be due to the dissociation of NaCl under bombardment. The dissociation was stopped when cooling the sample to about 125 °K. Metallic Na particles are formed on the surface under irradiation. The energy loss spectrum shows absorption bands at 1.5, 2.7, and 3.8eV. These bands are characteristic of the dissociation rate, dependent on sample temperature and on time of irradiation.     

Photoluminescence of EuSe and the magnetic polaron model

We report on extensive new measurements relating to the near-infrared photoluminescence of EuSe first reported by Busch and Wachter in 1966. The emission and excitation spectra are obtained as functions of temperature and external magnetic field. The total red shift is 0.13 eV in the excitation spectrum (in good agreement with the absorption-edge shift), and 0.25 eV in the emission spectrum. At 4.3°K an external magnetic field of 11 kOe quenches the yield to about 30% of its field-free value. The experimental results are discussed in relation to photoconductivity and optical absorption measurements. An intrinsic and localized model for the luminescence is proposed, in which the emission takes place by radiative recombination of a localized magnetic polaron with a hole in the europium 4f-shell.     

Luminescence of irradiated β-SiC

The influence of electron irradiation with energy of 3.5 MeV on the luminescence of cubic Silicon Carbide β-Sic) was investigated. It was shown that irradiation results in the diminution of edge emission and appearance of the red band (2.0–1.3 eV). Obtained results give an opportunity to consider the red band as transitions from excited states. The data on temperature stability of irradiated damage is given. The probable nature of irradiated defects are discussed.