Initial formation of contact layers on Ni/SiC samples studied by XPS

This study deals with the quantitative assessment of the coverage and thickness of Ni silicide films formed during annealing of SiC substrates with sputtered thin films of Ni. The analytical approach involves the use of XPS and depth profiling by means of successive ion etchings and XPS analyses. For either 3 or 6 nm initial Ni film thickness, a 10 nm Ni₂Si product is formed. On top of this product, the C released is accumulated in a very thin (1–2 nm) film. In neither case, the Ni₂Si covers the whole surface, although the coverage is almost complete (～90%) in the latter case. For the greater initial Ni‐film thickness of 17 nm, the thickness of the Ni₂Si product corresponds well to the value of 25 nm expected from the Ni/Ni₂Si stoichiometric relationship. This thickness is significantly greater than a critical level and the film covers the whole surface. Carbon is similarly accumulated in a very thin layer on the top surface, although the major part of C (～70%) is found inside the main reaction product layer. Copyright © 2008 John Wiley & Sons, Ltd.     

Hydrogen isotope behavior and its interaction with post irradiated energetic helium in SiC

The D₂ ⁺ was irradiated into SiC up to the saturation and thereafter He⁺ irradiation was performed to elucidate interaction mechanism between hydrogen isotope retained in SiC and irradiated energetic He⁺ by means of X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that D was trapped by both of Si and C by D₂ ⁺ irradiation and only D bound to Si interacted with irradiated He⁺ in the initial He⁺ irradiation stage. Some damaged structures were introduced into SiC by both of D₂ ⁺ and He⁺ irradiation. By heating after the irradiation experiments, most of SiC structure was recovered at the temperature above 1000 K. However, some free C was migrated toward the surface and aggregated on the surface of SiC. This fact indicates that the C impurity would contaminate the plasma and/or the tritium breeding materials, which is thought to be contacted with the SiC inserts.     

Thermal and Chemical Properties of a Glass in the SiO2-CaO-F System for Dental Applications

The crystallization behaviour of a glass in the SiO₂-CaO-F system was analyzed using differential scanning calorimetry (DSC), X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). Three crystalline phases were detected according to ICDD patterns. The first phase formed at 583°C was identified as CaF₂. The morphology was spherulitic with a diameter of approximately 100 nm. The second phase was formed at 664°C. It was identified as calcium fluoride silicate ‘Ca₂SiO₂F₂’ (ICDD 35-0002). SEM investigation showed that the crystals were spherulitic with a diameter smaller than 100 nm. The crystals were precipitated in the volume of the glass and homogeneously distributed. As a third phase, cristobalite crystallized at 895°C. The simultaneous release of calcium and fluorine ions from the vitreous glass in lactate buffer solution at pH 4.0, simulating an acidic oral environment, was investigated using X-ray photoelectron spectroscopy (XPS). The release of calcium and fluorine ions is of special interest for dental applications. The atomic ratios of the components Si, Ca and F at the glass surface after different leaching periods were determined. In order to investigate the leaching process, concentration profiles were measured using ion beam sputtering with Ar⁺ -ions. The dependence of the atomic ratios of Si, Ca and F on the sputter time was determined in order to measure the depth of the leaching layers. Most probably, the release of calcium and fluoride was controlled by a surface layer rich in calcium and flourine ions which dissolved with increasing leaching time. After 2 min leaching, a fluoride-rich surface layer measuring approximately 10 nm was detected. The atomic ratios of Si, Ca and F were different from the bulk composition ratios in a surface reaction layer of 800 nm thickness. After 30 min leaching time, a calcium- and fluoride-rich surface layer approximately 50 nm thick was formed. The bulk composition was reached at a depth of approximately 500 nm. The main component in the surface layer, after 12 days leaching in acidic environment, was silicon. This revised version was published online in August 2006 with corrections to the Cover Date.     

Characterization of Laser-Arc deposited multilayer systems by means of AES, Factor Analysis and XPS

In a vacuum chamber at 5 · 10^–4 Pa, multilayer systems (single layer thickness 20 nm) consisting of Ti/C and Al/C, respectively, have been deposited on Si (111) disks by the laser assisted coating (Laser-Arc). Structure and composition have been investigated by means of Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) in conjunction with Factor Analysis. AES depth profile measurements through the outermost part of the layers show for both the Ti/C and the Al/C samples a regular structure of the layer sequence metal/ carbon with a constant distance along the sample normal and sharply formed interfaces. In the metallic layers an oxygen enrichment was found, which is more intensive in the Ti/C deposit than in the Al/C one. By means of Factor Analysis in the evaluation of the differentiated spectra as a function of sputtering time, the formation of carbides at the metal/carbon interfaces has been detected. However, in the present state of the investigations it can not be decided, whether the observed carbide formation is the result of the energy impact due to ion sputtering or the coating fabrication process itself.     

Bombardment-induced silicide formation at rhenium-silicon interfaces studied by XPS and TEM

For further evaluation of photoemission properties of argon ion bombarded rhenium-silicon thin films pure element Re(21 nm) / Si(39 nm) / Re(21 nm) layer sandwiches were investigated on Si(111) substrates. TEM cross sectioning revealed abrupt interfaces between the polycrystalline Re layers and the amorphous Si layer in the as-deposited sample. In XPS sputter depth profiling the interfaces were severely broadened. This is not just a result of the finite electron escape depth together with atomic mixing and preferential sputtering which was demonstrated with the dynamic Monte Carlo simulation program T-DYN, but mainly caused by topographic effects and silicide formation. Factor analysis of XPS spectra results in two Re-Si principal components which can be ascribed to silicide bonding. Accordingly the valence band changes are caused by different bonding configurations. Bombardment-induced silicide formation is proved by TEM investigations of a selected cross-sectioned sandwich. Due to preferential bombardment-induced effects Re₂Si is formed at the Re/Si interfaces in contrast to the ReSi₂ growth on thermal heating. This is discussed in terms of the interface composition and the effective heat of formation (EHF) model. Received: 6 September 1998 / Revised: 17 December 1998 / Accepted: 31 January 1999     

Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100)

The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high‐resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x‐ray photoelectron spectroscopy (XPS) and energy‐filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga₂O₃ at the PbSe/GaAs interface. Copyright © 2008 John Wiley & Sons, Ltd.     

Production and characterization of nitrided CVD-SiC films

Silicon Carbide (SiC) and SiC with free silicon [SiC(Si)] thin films were prepared by chemical vapor deposition (CVD) using a CH₃SiCl₃-H₂-Ar gas mixture at a temperature of 1223 K. Afterwards these layers were gas nitrided in an ammonia-hydrogen-argon mixture at 1273 K. The solid product is an extremely thin film of silicon nitride on SiC or SiC(Si)-basic layers. These ultra thin silicon nitride films were investigated by glow discharge optical spectroscopy (GDOS) and x-ray photoelectron spectroscopy (XPS). The thickness of the layers was determined to a maximum value of 30 nm.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

XPS Depth Profile Analysis of a Thin Non-Conducting Titanate Superlattice

 New BaTiO₃-SrTiO₃ (BTO-STO)-superlattices which may be interesting for future electronic applications have been investigated by X-ray photoelectron spectroscopy (XPS) depth profiling. At first XPS measuring conditions were optimized for that non-conducting and thin layer systems (21 nm double layer thickness) considering the practical instrumental limitations. Second a simulation of the sputtering process for the concrete experimental conditions were done by a dynamic T-DYN code. By comparison of experimental and simulated depth profiles the maximum sample roughness could be estimated to be in the range of 2 nm.     

Effect of atomization on surface oxide composition in 316L stainless steel powders for additive manufacturing

The initial oxide state of powder is essential to the robust additive manufacturing of metal components using powder bed fusion processes. However, the variation of the powder surface oxide composition as a function of the atomizing medium is not clear. This work summarizes a detailed surface characterization of three 316L powders, produced using water atomization (WA), vacuum melting inert gas atomization (VIGA), and nitrogen atomization (GA). X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy analyses were combined to characterize the surface state of the powders. The results showed that the surface oxides consisted of a thin (~4 nm) iron oxide (Fe₂O₃) layer with particulate oxide phases rich in Cr, Mn, and Si, with a varying composition. XPS analysis combined with depth-profiling showed that the VIGA powder had the lowest surface coverage of particulate compounds, followed by the GA powder, whereas the WA powder had the largest fraction of particulate surface oxides. The composition of the oxides was evaluated based on the XPS analysis of the oxide standards. Effects of Ar sputtering on the peak positions of the oxide standards were evaluated with the aim of providing an accurate analysis of the oxide characteristics at different etch depths.     

Quantitative Analysis of Ti-Si-Ge/Si-Ge/Si Structures by EDS and AES

 A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform layer of the Ti(Si_0.85Ge_0.15)₂ phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between the results obtained by EDS/TEM, AES and supplementary techniques was found.     

Metal Oxoclusters as Molecular Building Blocks for the Development of Nanostructured Inorganic–Organic Hybrid Thin Films

Silica-based inorganic–organic hybrid thin films embedding the organically modified oxohafnium clusters (Hf₄O₂(OMc)₁₂, OMc=OC(O)–C(CH₃)=CH₂) were obtained by photo-activated free radical copolymerisation of the methacrylate groups of the cluster with those of the pre-hydrolysed (methacryloxypropyl)trimethoxysilane (MAPTMS, (CH₂=C(CH₃)C(O)O)(CH₂)₃Si(OCH₃)₃). By this route, a covalent anchoring of the cluster to the forming silica network was achieved. Samples characterized by two different Si/Hf compositions (18:1, 5:1) were prepared. The surface and in-depth composition of the thin films were investigated through Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). XPS depth profiles performed on the thin layers evidenced a homogenous in depth distribution of the hafnium guest species within the whole silica films and sharp film-substrate interfaces. Broad band dielectric spectroscopy (BDS) measurements permitted to investigate the electric response of the obtained films in the frequency and temperature range of 40 Hz – 1 MHz and 0–160°C.     

XANES and XPS characterization of hard amorphous CSixNy thin films grown by RF nitrogen plasma assisted pulsed laser deposition

Amorphous carbon silicon nitride thin films were grown on (100) oriented silicon substrates by pulsed laser deposition (PLD) assisted by an RF nitrogen plasma source. Up to about 30 at. % nitrogen and up to 20 at. % silicon were found in the hard amorphous thin films by XPS in dependence on the composition of the mixed graphite / Si₃N₄ PLD target. The universal nanohardness was measured to be at maximum load force of 0.1 mN up to 23 GPa for thin CSi_xN_y films with reference value of 14 GPa for single crystalline silicon. X-ray photoelectron spectroscopy (XPS) of CSi_xN_y film surfaces showed a clear correlation of binding energy and intensity of fitted features of N 1s, C 1s, and Si 2p peaks to the composition of the graphite / Si₃N₄ target and to nitrogen flow through the plasma source, indicating soft changes of binding structure of the thin films due to variation of PLD parameters. Auger electron spectroscopy (AES) of Si KL₂₃L₂₃;¹D Auger transition gave a detailed view of bonding structure of Si in the CSi_xN_y films. The intensity of π* and σ* resonances at the carbon K-edge X-ray absorption near-edge structure (XANES) of the CSi_xN_y films measured at BESSY I corresponded to the nanohardness of the CSi_xN_y films, thus giving insight into chemical binding structure of superhard amorphous materials.     

Competitive segregation of Si and P on Fe96.5Si3.5 (100) and (110)

Annealing an Fe_96.5Si_3.5 (100)/(110) bicrystal, containing 90 ppm P, leads immediately to a strong segregation of silicon. The Si atoms, however, desegregate subsequently and are displaced by P, whose segregation enthalpy is larger than that of silicon. The corresponding surface structures formed on both faces have been studied using complementary methods: Scanning tunneling microscopy (STM) to obtain atomically resolved geometrical information and Auger electron spectroscopy (AES) for the determination of the surface composition. Si substitutes surface Fe atoms on both faces and forms ordered surface alloys, whereas P occupies hollow sites on the surface. Si and P form c(2 × 2) superstructures on the (100) surface, whereby each segregated phosphorus atom blocks in the average one silicon segregation site. The (110) surface, on the other hand, is characterized by a c(1 × 3) Si superstructure. Due to the anisotropy of this surface the P/Si exchange proceeds by the formation of silicon coverage decreasing domain boundaries within the silicon structure, which are simultaneously occupied by P atoms. Furthermore the comparison of the AES and STM derived phosphorus coverages indicates a P multilayer segregation on the (110) surface.     

One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma

A steady-state and high-flux helicon-wave excited N₂ plasma was used to oxynitride Si substrates for the synthesis of silicon oxynitride (SiON) films. X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) have been extensively used to characterize surface quality of the SiON films, and it is found that a large amount of nitrogen (N) can be incorporated into the films. The result of XPS depth profiles shows that the N concentration is high near the surface and the oxide/Si interface. In the UPS spectra, absence of the reappearance of surface states suggests a resistance to clustering of the oxynitride layer. The N₂ flux and Ar mixture quantity can facilitate tuning of the dissociation characteristics in N₂ discharge. By modulating the N₂ fractions, the N⁺ density reaches maximum at a N₂/(N₂ + Ar) flow-rate ratio of 0.5, resulting in incorporation of more N atoms into the SiON films. Considering the easy control of N₂ plasma, our work opens up a new avenue for achieving high-yield SiON films at low temperature.     

硼掺杂SiC的制备、表征及其可见光分解水产氢性能

采用原位碳热还原法制备了硼掺杂的β-SiC (B_xSiC)光催化剂,并考察了其可见光下光催化分解水制氢的性能. 利用X射线衍射仪、X射线光电子能谱、扫描电镜及紫外-可见吸收光谱等测试方法对所制备催化剂的晶型、形貌、表面性质及能带结构进行了表征. 分析结果表明,硼原子掺杂进入SiC 晶格并取代了Si 位点,在价带上方形成了浅受主能级,从而导致了带隙宽变窄. 浅受主能级作为空穴的捕获中心可抑制光生电子和空穴的复合. 因此,与SiC相比,硼掺杂SiC光催化剂在可见光下催化分解水产氢的活性大大提高. 当B/Si 的摩尔比为0.05时,硼掺杂SiC表现出最高的光催化产氢活性.     

The diffusion of Pt in BST films on Pt/Ti/SiO2/Si substrate by sol-gel method

Barium strontium titanate (Ba_0.65Sr_0.35TiO₃) ferroelectric thin films have been prepared by sol-gel method on Pt/Ti/SiO₂/Si substrate. The X-ray diffraction (XRD) pattern indicated that the films were a polycrystalline perovskite structure and the atomic force microscope (AFM) image showed that the crystallite size and the root mean square roughness (RMS) were 90 nm and 3.6 nm, respectively. The X-ray photoelectron spectrum (XPS) images showed that Pt consisting in BST thin films was the metallic state, and the Auger electron spectroscopy (AES) analysed the Pt concentration in different depth profiles of BST thin films. The result displayed that the Pt diffusion in BST thin film is divided into two regions: near the BST/Pt interface, the diffusion type was volume diffusion, and far from the interface correspondingly, the diffusion type became grain boundary diffusion. In this paper, the previous researcher’s result was used to verify our conclusion.     

Comparative bulk, surface and depth profile analyses on AlN and SiC-coated B4C powders

Summary On thin layers of m sized AIN particles, superficial enrichment of O, probably caused by atmospheric hydrolysis and/or oxidation, was detected by means of Auger Electron Spectroscopy (AES) combined with sputter depth profiling. By comparing the O/N ratio found at the surface with that of the bulk, determined by means of the carrier gas heat extraction (CGHE) method, surface enrichment appeared to be more pronounced for lower O coverages. Chemical speciation of O (H₂O, CO₂) was feasible using appropriate CGHE techniques. — Similarly, using AES and Secondary Ion Mass Spectrometry as depth profiling methods, surface enrichment of Si, C and O was found for two B₄C powders, which had been coated by the sintering additive SiC. For this system, Laser Mass Microanalysis yielded additional information about chemical species. Combination of all applied methods led to comprehensive models of the natural and prepared particle coatings.     

Oxide and nitride protective layers on stainless steel studied by AES,WDS and XPS

Protective surface layers on AISI 321 stainless steel were prepared by thermal treatments at two different temperatures in air and two controlled atmospheres. Different oxide and/or nitride layers were formed. Surface morphology of the layers was investigated by scanning electron microscopy (SEM). Auger electron spectroscopy (AES) depth profiling of the samples was performed. Since depth profiling suggested layer thicknesses of the order of hundreds of nanometres, an attempt was made to obtain some fast, averaged information about the layer compositions using wavelength dispersive spectroscopy (WDS) at two different beam energies to obtain probing depths best suited to the layer thickness. X‐ray photoelectron spectroscopy (XPS) profiling of one layer was also performed to obtain information about the chemical states of the elements inside the layer. The analysed samples showed considerable differences with respect to their surface morphology, oxide/nitride layer thicknesses, compositions and layer–metal interface thickness. Copyright © 2007 John Wiley & Sons, Ltd.     

Growth of TiC films by Pulsed Laser Evaporation (PLE) and characterization by XPS and AES

Summary Thin films of TiC with a thickness of some 100 nm have been grown on Si(100) substrates by Pulsed Laser Evaporation (PLE). Advantages of PLE in comparison with more conventional growth methods e. g. PVD or CVD are reported. The feasibility of growing stoichiometric thin films of TiC by PLE was investigated. These films produced have been analysed in situ by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS results and Auger sputter depth profiles indicate that the films grown between RT and 500°C are stoichiometric TiC. Film/substrate interdiffusion is observed at 600°C substrate temperature and higher.     

XPS chemical state analysis of sputter depth profiling measurements for annealed TiAl-SiO2 and TiAl-W layer stacks

For the application of surface acoustic wave sensors at high temperatures, both a high-temperature stable piezoelectric substrate and a suitable metallization for the electrodes are needed. Our current attempt is to use TiAl thin films as metallization because this material is also known to be high temperature stable. In this study, Ti/Al multilayers and Ti-Al alloy layers were prepared in combination with an SiO₂ cover layer or a W barrier layer at the interface to the substrate (thermally oxidized Si or Ca₃TaGa₃Si₂O₁₄) as an oxidation protection. To form the high-temperature stable γ-TiAl phase and to test the thermal stability of the layer systems, thermal treatments were done in vacuum at several temperatures. We used X-ray photoelectron spectroscopy (XPS) sputter depth-profiling to investigate the film composition and oxidation behavior. In this paper, we demonstrate how the semiautomatic peak fitting can help to extract beside the elemental information also the chemical information from the measured depth profiles.