一类单极等熵流体动力学半导体模型的松弛极限

对一类有短的动量松弛时间的多维等熵流体动力学半导体模型的极限问题进行了讨论．首先构造非线性问题的有初始层的近似解,进而,在归结问题的解存在且有合适的正则性的假设下,证明了原非线性问题的局部古典解的存在性,并且证明了这个解在归结问题解的存在时间区间内收敛到形式近似解．     

半导体磁流体动力学模型经典解的整体适定性

研究一类半导体磁流体动力学模型,它是由关于电子的质量和速度的守恒律方程耦合Maxwell方程构成的流体动力学方程组.在小初值条件下,运用经典的双曲能量方法,得到了磁流体动力学模型Cauchy问题经典解的整体适定性.     

一类求解反应扩散方程的Newton波形松弛方法

对反应扩散方程提出一种新型的Newton波形松弛方法,并给出此方法的误差估计式.通过与传统的波形松弛方法比较,这种Newton波形松弛方法有更快的收敛性,且收敛速度不随网格加密而减慢.这种方法可以保持传统波形松弛方法可并行的特点.最后通过数值算例验证这种方法的有效性.     

一类半线性积分微分方程初值问题之整体解的存在性与唯一性

本文运用能量廷拓方法,讨论了一类描述有内部热耗散的杆中热传导问题的半线性积分微分方程初值问题之整体古典解的存在性,并附带证明了该问题之古典解的唯一性。     

一维半导体流体动力学模型的局部有界解

本文讨论了能量方程是压力一密度关系的一维半导体流体动力学模型方程,通过把欧拉－泊松方程变成拟线性波动方程,利用拟线性波动方程的局部解存在性,得到一维半导体流体动力学模型的局部解,并且解是有界的。     

不可压缩理想磁流体力学方程组的奇异极限

文中利用不可压缩理想磁流体力学（ＩＭＨＤ）方程组的特殊结构，引入变量代换，证明场论中的有关恒等式，克服失去双曲性所带来的困难，得到了一致能量估计，构造迭代序列，证明了当Ａｌｆｖｅｎ数０时，解的奇异极限．     

有界域上三维非等熵半导体方程解的渐近性(英文)

本文讨论了一类三维非等熵半导体方程. 利用能量估计法, 证明了热平衡稳态解的存在唯一性.然后, 得到了Cauchy-Neumann问题光滑解的整体存在性以及当t→ +∞这种光滑解以指数速度收敛到稳定解, 改进了文献[12]的结果.     

等离子体中带小参数的高维流体动力学双极模型的渐近展开(英文)

通过渐近展开的方法,研究了等离子体中带小参数的双极Euler-Poisson方程的拟中性极限和零松弛时间极限问题.对于每一个极限,只要具有好准备的初值,就可以得到任意阶渐近展开的存在唯一性,并在最后讨论了这些极限的验证问题.     

一类非线性二维自治系统的两个重合着的极限环

利用《微分积分法软件》和微分方程定性理论研究了一类二维非线性自治系统的动力学性质.探讨了五个平衡点的存在性、稳定性和极限集等一些几何性质,并通过描绘系统的图像解,得到两个重合的横置的葫芦形极限环.在解题的过程中首次发现了一个反常的现象:此系统所描述的周期性运动其周期的大小随自变量的微分的减小而增大.     

Well-posedness of the Hydrodynamic Model for Semiconductors

This paper concerns the well-posedness of the hydrodynamic model for semiconductor devices, a quasi-linear elliptic–parbolic–hyperbolic system. Boundary conditions for elliptic and parabolic equations are Dirichlet conditions while boundary conditions for the hyperbolic equations are assumed to be well-posed in L² sense. Maximally strictly dissipative boundary conditions for the hyperbolic equations satisfy the assumption of well-posedness in L² sense. The well-posedness of the model under the boundary conditions is demonstrated.     

Quasi-neutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors

The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates.     

A Quasi-Neutral Limit in a Hydrodynamic Model for Charged Fluids

 The combined quasineutral and relaxation time limit for a bipolar hydrodynamic model is considered. The resulting limit problem is a nonlinear diffusion equation describing a neutral fluid. We make use of various entropy functions and the related entropy productions in order to obtain strong enough uniform bounds. The necessary strong convergence of the densities is obtained by using a generalized version of the “div-curl” Lemma and monotonicity methods.     

A Quasi-Neutral Limit in a Hydrodynamic Model for Charged Fluids

 The combined quasineutral and relaxation time limit for a bipolar hydrodynamic model is considered. The resulting limit problem is a nonlinear diffusion equation describing a neutral fluid. We make use of various entropy functions and the related entropy productions in order to obtain strong enough uniform bounds. The necessary strong convergence of the densities is obtained by using a generalized version of the “div-curl” Lemma and monotonicity methods. Received September 27, 2001; in revised form February 25, 2002     

Global Weak Solutions of the Cauchy Problem to a Hydrodynamic Model for Semiconductors

In this paper we are concerned with the global existence of weak solutions of the Cauchy problem for a simplified one-dimensional hydrodynamic model for semiconductors. Convergence of approximate solutions derived by the fractional step Lax-Friedrichs scheme is established by using the compensated compactness method.     

The Time Asymptotic Expansion of the Bipolar Hydrodynamic Model for Semiconductors

In 2003, Gasser-Hsiao-Li [JDE(2003)] showed that the solution to the bipolar hydrodynamic model for semiconductors(HD model) without doping function time-asymptotically converges to the diffusion wave of the porous media equation(PME) for the switch-off case. Motivated by the work of Huang-Wu[arXiv:2210.13157], we will confirm that the time-asymptotic expansion proposed by Geng-Huang-Jin-Wu [arXiv:2202.13385] around the diffusion wave is a better asymptotic profile for the HD model in this paper...     

A Hydrodynamic Model for Covalent Semiconductors with Applications to GaN and SiC

In this paper we present a hydrodynamical model which, in principle, is able to describe charge transport in a generic compound semiconductor. The model makes use of an analytic approximation for the conduction bands. Energy dispersion relationships in the neighbors (valleys) of the lowest minima are, in fact, taken to be spherical, nonparabolic. The model considers the main scattering mechanisms in polar semiconductors, that is the acoustic, polar optical, intervalley non-polar optical phonon interactions and the ionized impurity scattering. Simulations are shown for the cases of bulk GaN and SiC.     

半导体中非线性漂流扩散模型的拟中性极限:快扩散情形

本文研究无Pn-联结的非线性双极半导体漂流扩散模型的消失Debye长度极限(即粒子中性极限)问题．使用熵方法和弱紧性方法从数学上严格证明了快扩散情形的拟中性极限．     

Relaxation Limit for Aw-Rascle System

We study the relaxation limit for the Aw-Rascle system of traffic flow. For this we apply the theory of invariant regions and the compensated compactness method to get global existence of Cauchy problem for a particular Aw-Rascle system with source, where the source is the relaxation term, and we show the convergence of this solutions to the equilibrium state.