纳米结构稀土元素氢氧化物的微结构分析

利用水热合成法成功地合成了Tb(OH)3纳米管、Sm(OH)3和Eu(OH)3纳米棒.Tb(OH)3纳米管外径80nm～150 nm,内径20 nm～90 nm,长度可达几个微米;Sm(OH)3和Eu(OH)3纳米棒直径28 nm～35 m,长度只有100nm～500 nm.使用X射线衍射、透射电子显微术及选区电子衍射等分析技术,对这些样品的物相纯度、形貌、晶体结构完整性以及晶体生长方向等进行了详细的表征.在部分Tb(OH)3样品端口处可以发现c轴加倍的超晶格结构.这种结构的形成可由在纳米管的生长过程中铽离子的局域耗尽机理来解释.     

热氧化法制备ZnO纳米棒及其结构表征

在无催化剂条件下,采用热蒸发Zn源,以N2为载气体,在SiO2衬底上反应沉积制备出单晶氧化锌纳米棒。XRD研究表明纳米棒为结晶完好的纤锌矿结构,并且为非定向生长,非定向生长的氧化锌纳米棒减弱了棒之间的屏蔽效应,表现出较好的场发射效果,为未来场发射电子器件的实际应用提供了可靠依据。     

ZnO近紫外波长纳米激光器的研究

随着纳米科技的兴起,纳米激光的研究成为了又一个新的重要课题.ZnO纳米微晶有两种结构可以产生随机激光,一是六角柱形蜂窝状微晶结构,二是颗粒粉末状结构,产生的近紫外激光波长是387.5 nm,光泵浦阈值是50 kW/cm2.采用气相输运的催化外延晶体生长过程来制备ZnO纳米线阵列构成的光致纳米激光器,激光波长383 nm,线宽仅为0.3 nm,光泵浦阈值是40 kW/cm2.     

Si基 ZnO纳米壁网格结构紫外探测器的制备

利用等离子体辅助分子束外延设备在Si（111）衬底上在没有任何催化剂情况下,得到了ZnO纳米壁的网状结构。这些ZnO纳米壁网格结构是c轴择优取向的。纳米结构的厚度为10到20纳米,高度大约为50纳米,这种纳米结构被制成平面的金属-半导体-金属结构的光导型紫外探测器件。这种探测器具有高响应,宽范围的特点。波长从360纳米减小到250纳米的过程中,器件的响应度无明显下降。在5V的偏压下,暗电流小于6μA。ZnO 纳米结构探测器响应峰值出现在360纳米处,其数值为15 A/W。探测器的紫外可见抑制比在2个量级以上。     

CdS/TiO_2纳米棒阵列复合电极制备及性能研究

染料敏化太阳电池以其良好的电池性能、简单的制作工艺、廉价的制作成本等优点越来越受到人们的关注。尝试用水热合成法在透明导电玻璃FTO(SnO2∶F)衬底上一步制备出高度有序的TiO2单晶纳米棒阵列,使用扫描电子显微镜SEM及X射线衍射仪(XRD)等对其进行表征分析。用制备的样品作为光阳极封装电池并对其进行电池性能的测试。用化学浴沉积(CBD)方法对制备的样品进行CdS表面修饰,通过测量其紫外-可见吸收光谱及明暗场的电流-电压特性曲线等考察电池性能随硫化镉修饰次数的变化规律。     

ZnO纳米棒中结的透射电镜研究

本文采用化学气相沉积法制得大量ZnO纳米棒,利用会聚束电子衍射(CBED)研究了纳米棒的生长方向,验证了纳米棒在生长过程中产生碰撞.通过TEM研究发现,纳米棒沿c轴生长,碰撞形成的晶界并不是一个随机取向的大角晶界,为了降低能量,晶界具有孪晶关系.晶界的存在导致晶体产生缺陷生长,使纳米棒的结的附近区域长粗.     

ZnO纳米棒的电沉积生长方法研究

用含有硝酸锌(Zn(NO3)2)和六次甲基四胺(HMTA,C6H12N4)的电解液,在低温环境下采用阴极电沉积法在ITO玻璃上成功合成了氧化锌(ZnO)纳米棒阵列。系统研究了电压、前驱物(Zn2+)浓度、温度和种子层等参数对ZnO纳米棒形貌结构的影响,实现了ZnO纳米棒的可控制备。结果表明,在有种子层的情况下,当电压为-0.9V、Zn2+浓度为0.01M、温度为75℃条件下生长的ZnO纳米棒c-轴择优取向好、尺寸均匀(80~100nm),且在380~750nm的可见光波长范围内的透射率达到80%。     

基于核壳结构二氧化钛纳米棒/甲基氨铅氯钙钛矿高性能的紫外光电探测器

利用甲氨铅氯(CH₃NH₃PbCl₃)钙钛矿薄膜直接包覆在垂直二氧化钛纳米棒(TiO₂NRs)阵列上的方法,研制了一种灵敏的紫外光电探测器。光响应分析表明,所制备的TiO₂NRs阵列/CH₃NH₃PbCl₃钙钛矿核壳异质结对紫外辐射非常敏感,峰值灵敏度在365nm左右,但对波长大于400nm的光照几乎不敏感。在365nm的光照以及2V的偏压下,其响应度和比探测率分别为～50mA/W和～5.39×10¹⁰ Jones。此外,该器件表现出良好的环境稳定性。根据我们的理论模拟,相对较好的器件性能与核壳异质结阵列独特的几何结构的显著地光限制效应有关。结果表明,基于TiO₂NRs阵列/CH₃NH₃PbCl₃钙钛矿核壳异质结的紫外光电探测器在未来的紫外光电系统中有着潜在的应用前景。     

紫外辐射ZnO纳米棒的生长及性能

用退火法在玻璃、硅片衬底上先生长ZnO籽晶,然后在90℃下在醋酸锌和六亚甲基四胺溶液中生长了直径约为17 nm的ZnO纳米棒.采用X射线衍射仪(XRD)分析了不同衬底上生长的ZnO纳米棒的结构和择优生长取向,用扫描电子显微镜(SEM)观察了ZnO的形态,用荧光光谱仪分析了纳米棒的发光特性,讨论了籽晶、衬底类型和衬底放置方式对纳米棒的尺寸、排列趋向性和光学性能的影响.纳米棒的直径和排列依赖于衬底的初始状态,籽晶可以减小纳米棒的尺寸,增强纳米棒的排列有序性;一旦衬底上生长了籽晶,后续生长的纳米棒的尺寸、排列和性能与衬底的类型无关,纳米棒都具有强的紫光发射.但衬底的放置方式会影响其上纳米棒的形态,竖直放置的衬底易生长尺寸分布均匀的准有序排列的纳米棒.     

ZnO纳米颗粒的紫外光探测器制备及其特性

为了发展高性能、低成本和结构简单的ZnO紫外 光探测器。在本文中,利用溶液法,制备出ZnO 纳米颗粒,采用透射电子显微镜(TEM)、X射线衍射仪(XRD)、紫外-可见分光光度计和荧光 光谱仪,分别 研究了ZnO纳米颗粒的形貌、晶相结构和光学特性。结果显示:样品呈球形状的颗粒,尺寸 分布在6~8.5nm 之间,平均粒径为7.1nm,为六方纤锌矿结构。发现ZnO纳米颗 粒的陡峭吸收边出现在370nm附近,在390nm 处出现一个很强的近带边发射峰和一宽泛的可见光发光带。此外,利用制备的ZnO纳米颗粒 ,旋涂在刻蚀 有叉指电极的FTO(SnO₂:F)上,制备出紫外光探测器,测试了它在暗态和365 nm紫外光照下的电流-电压(I-V) 和电流-时间(I-t)特性。结果表明:紫外光探测器的灵敏度、光响应度、响 应时间、恢复时间分别为62.4(在 －3.5V处),13.6A/W(在+5V处), 15s。另外,它的光响应机理主要由于ZnO纳米 颗粒表面吸附的氧起主导作用。     

Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes

Using a low temperature hydrothermal synthesis method, ZnO nanorod networks have been directly grown across trenched Au microelectrodes arrays, which were modified with a layer of ZnO seeds. The characteristics of the current-voltage (Ⅰ-Ⅴ) and the photoresponse were obtained both in the dark and under ultraviolet illumination. The bridged nanorod network demonstrated a highly sensitive response to UV illumination in atmosphere at room temperature. It can be useful for nanoscale optoelectronic applications, serving as chemical sensors,biological sensors, and switching devices.     

Facile fabrication of heterostructure with p-BiOCl nanoflakes and n-ZnO thin film for UV photodetectors

Herein,high-quality n-ZnO film layer on c-sapphire and well-crystallized tetragonal p-BiOCl nanoflakes on Cu foil are prepared,respectively.According to the absorption spectra,the bandgaps of n-ZnO and p-BiOCI are confirmed as ～3.3 and ～3.5 eV,respectively.Subsequently,a p-BiOCl/n-ZnO heterostructural photodetector is constructed after a facile mechanical bonding and post annealing process.At-5 V bias,the photocurrent of the device under 350 nm irradiation is ～800 times higher than that in dark,which indicates its strong UV light response characteristic.However,the on/off ratio of In-ZnO-In photodetector is ～20 and the Cu-BiOCl-Cu photodetector depicts very weak UV light response.The heterostructure device also shows a short decay time of 0.95 s,which is much shorter than those of the devices fabricated from pure ZnO thin film and BiOCl nanoflakes.The p-BiOCl/n-ZnO heterojunction photodetector provides a promising pathway to multifunctional UV photodetectors with fast response,high signal-to-noise ratio,and high selectivity.     

U型凹槽电极硅MSM结构光电探测器的研制

为了提高硅MSM结构光电探测器的光电响应度,制备了U型凹槽电极结构的探测器.5 V偏压下,对650 nm波长入射光的绝对光电响应度测试表明,凹槽电极结构的探测器最大光电响应度值为0.486 A/W,比同样尺寸的平版结构光电探测器提高了约6倍.文中也对比了具有抗反射膜和不具有抗反射膜的器件相对响应光谱的差别,并且比较分析了叉指间隙分别为5 μm和10 μm器件光电响应的不同.     

ZnO纳米棒掺杂液晶的阈值电压现象

采用ZnO纳米棒在单侧PVA层掺杂,我们在不同方向的直流电压下测到了液晶盒不同的阈值电压。实验中采用的ZnO纳米棒长度和直径分别大约为180nm和20nm。当ZnO掺杂在靠近正极一侧时,液晶盒阈值电压与不掺杂时相比升高;当ZnO掺杂在负极一侧时,液晶盒阈值电压与不掺杂时相比降低。上述实验结果可以由内建电场模型解释。另外,我们在低频交流电压下还观察到了一种共振现象。     

Voltage threshold behaviors of ZnO nanorod doped liquid crystal cell

With ZnO nanorods doped in only one poly(vinyl alcohol)(PVA) layer,we observed different threshold voltages with reverse DC voltages for a liquid crystal cell.The length and diameter of the ZnO nanorod used in our experiment were about 180 nm and 20 nm,respectively.When the PVA layer on the anodic side was doped, the threshold voltage was larger than that of the pure cell;conversely,when the PVA layer on the cathodic side was doped,the threshold voltage was smaller than that of the pure cell.These results can be explained by the internal electric field model.We also observed a resonance phenomenon with a low frequency AC voltage.     

Investigation on UV photodetector behavior of RF-sputtered ZnO by impedance spectroscopy

Ag/ZnO/Ag thin films representing metal/semiconductor/metal ultraviolet (UV) photodetectors were successfully prepared by RF magnetron sputtering. A UV light emitting diode was used as an illuminating source at 365 nm. The current-voltage characteristics of the device under UV illumination showed an enhancement in the forward current. Device modeling was carried out using impedance spectroscopy. The resistance of the device decreased as the light was switched from dark to UV. Moreover, the device showed further decrease in resistance at a bias voltage of up to 2 V.     

基于微型谐振腔的环形光探测器设计

提出了一种基于微型谐振腔的新型环形光探测器(MRPD),MRPD采用谐振腔和吸收腔分离的结构.MRPD避免了直波导与环形腔完全耦合时限制因子极低的问题,具有更强的可行性.导出了量子效率的表达式,分析了量子效率与谐振腔半径的关系及透射系数与光谱半高全宽(FWHM)的关系.     

Dynamic performance of UV photodetectors based on polycrystallinediamond

Dynamic behavior of photogenerated carriers in diamond-based UV photodetectors is investigated over a wide excitation frequency range, enabling an analysis of the influence of film morphology and impurity content on device response times. Under pulsed light excitation, short time detector photoresponse varies from 2.5 to 10 ns, whereas carrier lifetimes estimated under steady-state illumination lie in the 0.1-1 ns range, exhibiting a small dependence on the film microstructure. Conversely, very long response times, strongly dependent on film characteristics, are detected by decreasing the excitation frequency. Such results are discussed in terms of carrier recombination at defect- and impurity-related centers, trapping at localized states close to the band edges, and dispersive transport. It is suggested that device response times are mainly related to charge trapping either into discrete or continuously distributed energy levels, rather than to recombination of carriers at midgap defect states     

Multifunctional device based on ZnO:Fe nanostructured films with enhanced UV and ultra-fast ethanol vapour sensing

Extensive application requests on high-performance gas sensors and photodetectors reveal the importance of controlling semiconducting oxide properties. Sensing properties of ZnO nano- and micro-structures can be tuned and their functional performances can be enhanced more efficiently by metal-doping. Here, we report the synthesis of crystalline Fe-doped ZnO (ZnO:Fe) nanostructured films via a cost-effective and simple synthesis from chemical solutions (SCS) approach followed by rapid thermal annealing (RTA) with excellent potential for the development of multifunctional devices for UV and ethanol (C₂H₅OH) vapour sensing. The effects of two types of thermal annealing on the ZnO:Fe morphology, the crystallinity, the electronic and the vibrational properties, the UV radiation and the gas sensing properties are investigated. The experimental results indicate an increase in UV response (I_UV/I_DARK~10⁷) of as-grown ZnO nanostructured films by Fe-doping, as well as an essential improvement in rise and decay times due to RTA effects at 725 °C for 60 s. In comparison with un-doped samples, ZnO:Fe (0.24 at%) specimens showed a response to ethanol which is enhanced by a factor of two, R_air/R_gas~61. It was demonstrated that by using Fe-doping of ZnO it is possible to reduce essentially the response τ_r and recovery times τ_d of the multifunctional device. The involved gas sensing mechanism is discussed in detail in this paper. The presented results could be of great importance for the application of RTA and doping effects for further enhancement of UV detection and gas sensing performances of the ZnO:Fe nanomaterial-based multifunctional device.     

Novel Solid‐State Microbial Sensors Based on ZnO Nanorod Arrays

Gravity and magnetism are implemented to change the morphology of zinc oxide nanorod sensors during synthesis. The effects of gravity and magnetism can translate into future application of these nanorods through cost‐effective, environmentally friendly, and easy‐to‐use biosensor technology with the quickest available sensing. The sensors can pave the way toward detection of both bacteria and fungi present on the surface with high sensitivity. This ability to sense microorganisms in a “non‐solution‐based” environment represents a key step forward in the fields of health and food safety, as well as solid‐state nanomaterial biotechnology applications. Hundreds of thousands of people are affected each year by accidental contamination and current protocols are far from preventative. The results of the magnetic field studies when compared with previous results show that the following factors affect the outcome of applying magnetic field during the growth of nanorods on their morphology: the direction of growth with respect to gravity, the method of seeding, and the substrate.