Formation of microstructured silicon surfaces by electrochemical etching using colloidal crystal as mask

Silicon disk arrays and silicon pillar arrays with a close-packed configuration having an ordered periodicity were fabricated by the electrochemical etching of a silicon substrate through colloidal crystals used as a mask. The colloidal crystals were directly prepared by the self-assembly of polystyrene particles on a silicon substrate. The transfer of a two-dimensional hexagonal array of colloidal crystals to the silicon substrate could be achieved by the selective electrochemical etching of the exposed silicon surfaces, which were located in interspaces among adjacent particles. The diameter of the tip of the silicon pillars could be controlled easily by changing the anodization conditions, such as current density and period of electrochemical etching.     

Mechanisms of surface processes in silicon etching

A unified view on the mechanism allowing one to explain the experimental features governing spontaneous silicon etching by atomic fluorine is presented. Analysis of the phenomenological equation of adsorption shows a significant difference between etching mechanisms at high and low heat of adsorption on the surface being etched. As follows from the parameter estimates, one or another case can be realized under different experimental conditions. At steady-state the etching is argued to be determined only by the processes taking place on the SiF. film surface. To describe the process, it is necessary to understand the mechanism of overcoming the surface barrier for fluorine penetration into the film. At low heat of fluorine adsorption the barrier is overcome by thermal activation. In the opposite case the etching mechanism includes electron tunneling from silicon to adatoms and creation of a surface electric field. The field lowers the high energetic barrier for fluorine penetration. Based on the kinetic equations describing the electronic and atomic processes on the surface, the equation of the field strength is obtained. This equation is analyzed in different limit cases. The observed features are shown to be reproduced at some conditions on the parameters. Definite predictions on the temperature dependence of the etch rate are made.     

Electrochemical synthesis and application of NF3

Electrolytic production of nitrogen trifluoride (NF₃) was reviewed. Electrolytic production of NF₃ using a nickel anode is more useful method from view points of the yield and purity of NF₃, especially, free from carbon tetrafluoride (CF₄), but has a few problems to be solved. At present, electrolysis of a molten NH₄F-KF-HF system using a carbon anode is developing, because no anode consumption and no storage of nickel sludge in the melt take place.Reaction of NF₃ with phosphorus sulfide, preparation of functionally gradient fluorocarbon films and carbonaceous thin films by plasma technique using NF₃, and reactive ion etching of Si, SiO₂, and SiC using NF₃ plasma were reported for the purpose of development on application of NF₃.     

氮掺杂碳纳米管包覆碳化硅作为不含金属的催化剂(英文)

A hierarchical metal-free catalyst consisting of nitrogen-doped carbon nanotubes decorated onto a silicon carbide (N-CNTs/SiC) macroscopic host structure was prepared. The influence of N-CNTs incorporation on the physical properties of the support was evaluated using different characterization techniques. The catalyst was tested as a metal-free catalyst in the selective oxidation of H2S and steam-free dehydrogenation of ethylbenzene. The N-CNTs/SiC catalyst exhibited extremely good desulfurization performance compared to a Fe2O3/SiC catalyst under less conducive reaction conditions such as low temperature, high space velocity, and a low O2-to-H2S molar ratio. For the dehy-drogenation of ethylbenzene, a higher dehydrogenation activity was obtained with the N-CNTs/SiC catalyst compared to a commercial K-Fe/Al2O3 catalyst. The N-CNTs/SiC catalyst also displayed good stability as a function of time on stream for both reactions, which was attributed to the strong anchoring of the nitrogen dopant in the carbon matrix. The extrudate shape of the SiC support allowed the direct macroscopic shaping of the catalyst for use in a conventional fixed-bed reactor without the problems of catalyst handling, transportation, and pressure drop across the catalyst bed that are encountered with nanoscopic carbon-based catalysts.     

A simple route to nanocrystalline silicon carbide

Nanocrystalline silicon carbide has been prepared via reacting magnesium silicide (Mg₂Si) with carbon tetrachloride (CCl₄) in an autoclave at 450-600°C. X-ray diffraction patterns of the products can be indexed as the cubic cell of SiC with the lattice constant, a=4.352 Å, in good agreement with a=4.349 Å (JCPDS card No. 75-0254). The transmission electron microscopy images show that the sample mainly consists of nanoparticles with an average size from 30 to 80 nm co-existing with a small fraction of nanorods and nanowires. Typically the nanorods range from 20 to 40 nm in diameter and the nanowires have diameters of 20 nm and lengths up to 10 μm. The Raman spectrum shows a characteristic sharp peak at 790 cm⁻¹. X-ray photoelectron spectra (XPS) gives an atomic ratio of Si to C as 1.08:1.00 from the quantification of the peak intensities. Photoluminescence spectrum reveals that the SiC sample emits ultraviolet light of 328 nm. A possible mechanism and the influence of temperature on the formation of crystalline SiC are proposed.     

Thermal stability of high surface area silicon carbide materials

The synthesis of mesoporous silicon carbide by chemical vapor infiltration of dimethyl dichlorosilane into mesoporous silica SBA-15 and subsequent dissolution of the silica matrix with HF was investigated. The influence of the synthesis parameters of the composite material (SiC/SBA-15) on the final product (mesoporous SiC) was determined. Depending on the preparation conditions, materials with specific surface areas from 410 to 830 m² g⁻¹ and pore sizes between 2 and 10 nm with high mesopore volume (0.31-0.96 cm³ g⁻¹) were prepared. Additionally, the thermal stability of mesoporous silicon carbide at 1573 K in an inert atmosphere (argon) was investigated, and compared to that of SBA-15 and ordered mesoporous carbon (CMK-1). Mesoporous SiC has a much higher thermal textural stability as compared to SBA-15, but a lower stability than ordered mesoporous carbon CMK-1.     

Surface oxidation of high-surface-area silicon carbide: FT-IR studies

The surface of ultrafine silicon carbide powders, prepared by a laser-driven gas-phase reaction was studied as a self-supporting disk by FT infrared spectrometry. After evacuation silicon and carbon atoms located at the surface give rise tovSiH andvCH bands. When heating in oxygen, subtraction spectra showed features which could be strictly correlated with a progressive growth of a silica layer: SiH and CH bands were replaced by new bands characteristic of amorphous silica and the typical band of surface silanol groups on silica (3745 cm^–1) simultaneously increased.     

Preparation of a cross-linked polycarbosilane and its conversion to silicon carbide ceramics

Summary Cross-linked polycarbosilanes are obtained from the reaction of Cl₂MeSiCHCl₂ and Mg in tetrahydrofuran, followed by reduction with LiAlH₄. Analysis by NMR spectroscopy shows that most polycarbosilane is of the formula [MeSiCH]_n.Contribution no. 6627     

Electrochemical impedance spectroscopy as a probe for wet chemical silicon oxide characterization

The kinetics of the chemical growth of silicon oxide in H₂O₂-containing ammonia solutions and its break-up by dilute ammonia solutions was investigated using electrochemical techniques and more specifically electrochemical impedance spectroscopy. The recording of the open circuit potential (OCP), complemented by successive impedance diagrams, demonstrates clearly the build-up of a silicon oxide passivating layer when hydrophobic Si surfaces are immersed in NH₃+H₂O₂ solutions. The thickening of the chemical oxide coating mainly results in the decrease of the capacitance value together with the enhancement of the ohmic surface resistance. On the other hand, pure ammonia dilute solutions lead to the progressive destruction of this hydrophilic passivating surface oxide, which is revealed by the simultaneous decay of the real component of the impedance. Finally, we observed the break-up of the passive layer, characterized by a sudden drop of the OCP to a value quite identical to that obtained with a bare Si surface. This process resulted in a dramatic corrosion of the substrate surface. Electronic Publication     

Use of spectroscopic techniques for the chemical analysis of biomorphic silicon carbide ceramics

Biomorphic silicon carbide ceramics are a new class of materials prepared by several complex processing steps including pre-processing (shaping, drying, high-temperature pyrolysis in an inert atmosphere) and reaction with liquid silicon to obtain silicon-carbide. The results of industrial process of synthesis (measured by the SiC content) must be evaluated by means of fast analytical methods. In the present work, diverse samples of biomorphic ceramics derived from wood are studied for to evaluate the capability of the different analytical techniques (XPS, LIBS, FT-IR and also atomic spectroscopy applied to previously dissolved samples) for the analysis of these materials. XPS and LIBS gives information about the major components, whereas XPS and FT-IR can be used to evaluate the content of SiC. On the other hand, .the use of atomic techniques (as ICP-MS and ETA-AAS) is more adequate for the analysis of metal ions, specially at trace level. The properties of ceramics depend decisively of the content of chemical elements. Major components found were C, Si, Al, S, B and Na in all cases. Previous dissolution of the samples was optimised by acid attack in an oven under microwave irradiation.     

Stoichiometric silicon carbide from borate‐catalyzed polymethylsilane–polyvinylsilane formulations

Polymethylsilane (PMS) and polyvinysilane (PVS) were prepared by Wurtz condensation of chlorosilanes and characterized by spectroscopy (¹H, ¹³C and ²⁹Si NMR, and infrared), viscosity and GPC analysis. Mixtures of the PMS and PVS were prepared and stabilized with 2,6‐di‐t‐butyl‐4‐methylphenol (BHT; 0.5 wt%) to which was added a catalytic amount of tris­(trimethylsilyl)borate, B(OSiMe₃)₃ (BTMS; 2 wt% by weight). The resulting liquid materials were pyrolyzed to 950 °C and to 1400 °C under argon. The formulation, composed of 60% PMS / 40% PVS / 2% BTMS, was pyrolyzed and gives nearly stoichiometric silicon carbide in 73% yield. The pyrolyzate was analyzed spectroscopically at intermediate stages in order to study its thermal transformations and the influence of the boron catalyst. The ceramic obtained from the formulation 60% PMS / 40% PVS / 2% BTMS shows good stability at 1500 °C under oxygen. Copyright © 1999 John Wiley & Sons, Ltd.     

A novel sacrificial interlayer-based method for the preparation of silicon carbide membranes

A novel method is presented based on the use of sacrificial interlayers for the preparation of nanoporous silicon carbide membranes. It involves periodic and alternate coatings of polystyrene sacrificial interlayers and silicon carbide pre-ceramic layers on the top of slip-casted tubular silicon carbide supports. Membranes prepared by this technique exhibit single gas ideal separation factors of helium and hydrogen over argon in the ranges 176–465 and 101–258, respectively, with permeances that are typically two to three times higher than those of silicon carbide membranes prepared previously by the more conventional techniques. Mixed-gas experiments with the same membranes indicate separation factors as high as 117 for an equimolar H₂/CH₄ mixture. We speculate that the improved membrane characteristics are due to the sacrificial interlayers filling the pores in the underlying structure and preventing their blockage by the pre-ceramic polymer. The new method has good promise for application to the preparation of a variety of other inorganic microporous membranes.     

Electron-impact-induced anisotropic etching of silicon by hydrogen

The etch rate of silicon in a hydrogen low-pressure discharge plasma can be strongly enhanced by electron bombardment, reaching presently up to 1000 Å/min. The etch rate increases linearly with increasing electron current density and hydrogen pressure (range 0.05–0.7 mbar) and decreases with increasing temperature, yielding an activation energy of –4.2 kcal/mole in a temperature range of 80 to 300°C. The etching remains anisotropic within the whole pressure range studied.     

Enhancement and stabilization of the photoluminescence from porous silicon prepared by Ag‐assisted electrochemical etching

In this paper, we present the results of studies on the photoluminescence (PL) of porous silicon (PSi) samples obtained by etching with the assistance of silver metal in different ways. If the Si sample, after being coated with a layer of silver nanoparticles, is electrochemically etched, its PL intensity becomes hundreds of times stronger than the PL intensity when it is chemically etched in the similar conditions. The difference in the PL intensities is explained partly by the anodic oxidation of silicon which occurs during the electrochemical etching process. The most obvious evidence that silicon had been oxidized anodically in the electrochemical etching process is the disappearance of the PSi layer and the appearance of the silicon oxide layer with mosaic structure when the anodization current density is large enough. The anodic oxidation has the effect of PSi surface passivation. Because of that, the PL of obtained PSi becomes stronger and more stable with time. Copyright © 2012 John Wiley & Sons, Ltd.     

FeS阳极过程电化学研究

采用高温合成法由光谱纯的Fe和S制备FeS,并应用电位扫描和电位阶跃法研究FeS在0.5mol·L-1H2SO4+0.5mol·L-1K2SO4溶液中的阳极电化学行为.考察酸度对FeS阳极极化的影响,测定阳极过程的传递系数β、交换电流I0和Fe2+在FeS中的固相扩散系数DFe以及不同电极电位下阳极电化学反应活化能ΔEa.     

Direct multielement trace analyses of silicon carbide powders by spark ablation simultaneous inductively coupled plasma optical emission spectrometry

A procedure for the direct analysis of silicon carbide powders (SiC) by simultaneous detection inductively coupled plasma optical emission spectrometry using a Spectro-CIROS™ spectrometer (CCD-ICP-OES) and a novel spark ablation system Spectro-SASSy (SA) as sample introduction technique is described. The sample preparation procedure for SA of non-conducting material is based on mixing the sample powders with a conducting matrix, in this case copper and briquetting pellets. Pressing time, pressure and mixing ratio are shown to be important parameters of the pelleting technique with respect to their mechanical stability for the reliability of the analysis results. A mixing ratio of 0.2 g +0.6 g for SiC and Cu, a pressure of 10 t cm^− 2 and a pressing time of 8 min have been found optimum. It has also been shown that the spark parameters selected are crucial for uniform volatilization. Electron probe micrographs of the burning spots and the analytical signal magnitude showed that a rather hard spark at 100 Hz was optimum. The determination of trace elements in silicon carbide powders is demonstrated using a calibration based on the addition of standard solutions. For Al, Ti, V, Mn and Fe detection limits in the lower µg g^− 1 range can be achieved. Internal standardization with Y in combination with the addition of standard solutions allows relative standard deviations in the range of 4 to 24% for concentration levels of the order of 3 to 350 µg g^− 1.     

Electrochemical behaviour of p-Si in methanol solutions of chlorides

The mechanism of anodic dissolutions of p-Si single crystals in CH₃OH–LiCl and CH₃OH–LiCl–HCl solutions was investigated by means of the following electrochemical methods: linear sweep voltammetry, the potentiostatic transient technique and XPS surface analysis. The dissolution of p-Si proceeds by a two-step mechanism with the creation of a Si(II) surface intermediate. At low anodic overvoltage the dissolution proceeds with the formation of porous silicon, probably through the reaction: 2Si(II)Si+Si(IV). Structural etching of the single crystals surface was observed at high anodic overvoltage (E>2 V). At this potential range, silicon dissolves with the formation of a Si(IV) soluble product. Electrolysis of the methanol solvent containing Si(IV) in the cell p-Si|CH₃OH–LiCl–Si(IV)|M, where M=Pt, Cu or 18/8 stainless steel, leads to the deposition of an amorphous organosilicon layer on the cathode. The analysis of the deposit performed by means of XPS, FTIR and SEM allows determination of the morphology and composition of the film. The layer consists of Si–OCH₃ compounds and can be created only in methanol solvent. The film is unstable in a humid atmosphere and undergoes transformation into a Si–OH layer.Contribution to the 3rd Baltic Conference on Electrochemistry, Gdansk-Sobieszewo, Poland, 23–26 April 2003Dedicated to the memory of Harry B. Mark, Jr. (28 February 1934–3 March 2003)     

Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique

A novel method for the determination of Al, Ca, Cr, Cu, Fe, Mg, Mn, Ni and Ti in high purity silicon carbide (SiC) using slurry introduction axial viewed inductively coupled plasma optical emission spectrometry (ICP-OES) was described. The various sizes of SiC slurry were dispersed by adding dispersant polyethylene imine (PEI). The stability of slurry was characterized by zeta potential measurement, SEM observation and signal stability testing. The optimal concentration of PEI was found to be 0.5 wt% for the SiC slurry. Analytical results of sub-μm size SiC by the slurry introduction were in good accordance with those by the alkaline fusion method which verified that determination could be calibrated by aqueous standards. For μm size SiC, results of most elements have a negative deviation and should be calibrated by the Certified Reference Material slurry. Owing to a rather low contamination in the sample preparation and stability of the slurry, the limits of detection (LODs), which are in the range of 40-2000 ng g⁻¹, superior to those of the conventional nebulization technique by ICP-OES or ICP-MS.     

Chemical etching of zinc oxide for thin-film silicon solar cells

Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.     

Electrochemical Study of Catechol in the Presence of Dibuthylamine and Diethylamine in Aqueous Media: Part 1. Electrochemical Investigation

Electrochemical oxidation of catechol has been studied in the presence of secondary amines as nucleophiles in aqueous solution with various pH values using cyclic voltammetry and differential pulse voltammetry. Cyclic voltammetry of catechol in pure buffered solution (2.00 pH<9.00) shows one anodic and corresponding cathodic peak which relates to the transformation of catechol to corresponding o‐benzoquinone and vice versa within a quasi‐reversible two electron transfer process. Also, a little amount of o‐benzoquinone undergoes polymerization reaction. Cyclic voltammogram of catechol in the presence of nucleophilic amines, show one anodic peak in the first scan of potential but on the reverse scan the corresponding cathodic peak disappear and new peak is observed at less positive potential. In the second scan of potential also a new anodic peak is observed. On the other hand at high concentration of amines the redox peak attributable to formed polymer disappear showing that in this condition the polymerization reaction occurs at non‐measurable extent. On the basis of these observations we propose an ECE mechanism for the electrochemical oxidation of catechol in the presence of secondary amines.